TWI564429B - 真空成膜裝置 - Google Patents
真空成膜裝置 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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Description
本發明，係有關於對於被配置在真空腔內之身為成膜對象的基板而將二種以上之原料氣體交互作供給並藉由化學反應來成膜特定之薄膜的真空成膜裝置。
在半導體元件之製造工程中，係存在有對於晶圓等之身為成膜對象的基板而成膜特定之薄膜的成膜工程，對於此成膜工程，伴隨著近年之半導體元件的細微化，係對於以低溫度來實施成膜一事有所要求。基於此事，利用有具備熱履歷之降低和良好之階差被覆性等的特徵之ALD法的成膜方法，係備受矚目。
實施上述成膜方法之真空成膜裝置，例如係藉由專利文獻1而為週知。此發明，係具備有具備將內部作加熱之加熱器的真空腔。在真空腔之上部，係被形成有氣體導入口，在此氣體導入口處，係經由切換閥而被分別連接有對於每一氣體而分別作設置之複數的配管。又，在真空腔內之上部空間處，係被設置有與氣體導入口相通連
之噴淋頭，並且係與此噴淋頭相對向地而設置有將基板作保持之平台。在真空腔之底部處，係為了將內部之氣體作排氣而被形成有與真空幫浦相通之排氣口。
之後，對於基板表面供給第1原料氣體，並使此第1原料氣體被化學吸附於基板表面上而形成第1原料氣體的原子之層。接著，將基板表面之氣體氛圍藉由惰性氣體來作置換，之後，對於基板表面供給第2原料氣體，並使其與吸附在基板表面上之第1原料氣體產生反應，而形成第2原料氣體的原子之層。接著，在將基板表面之氣體氛圍更進而藉由惰性氣體來作了置換之後，再度吸附第1原料氣體，並與上述相同的，在置換後而再度供給第2原料氣體。反覆進行此一連串之操作，而將二種以上之原料氣體交互作供給並藉由化學反應而成膜特定之薄膜。
然而，在上述先前技術例之真空成膜裝置中，由於係從與基板表面(亦即是基板之成膜面)而相正交之方向來供給原料氣體，因此，係有著難以涵蓋基板之成膜面全面地來將原料氣體有效地作吸附之問題。因此，係考慮有：以從基板之成膜面的其中一側起而朝向另外一側地並且沿著此基板表面地而將前述氣體作噴射的方式，來構成原料氣體之氣體供給手段，並且，從此另外一側起，來將被導入至真空腔內之原料氣體等作真空抽氣之構成。於此情況，係會有必要在真空腔之側壁處，而將作為氣體供給手段之切換閥或配管以及通過作為排氣手段之真
空幫浦的排氣管等之零件從此壁面起而朝向側方向延伸地作設置，不僅是裝置之設置面積會變大，並且，依存於情況，也可能會發生由於此些之零件而被有所限制並成為無法作為具備有中央之搬送室的叢集工具用之成膜模組來作利用的問題。
[專利文獻1]日本特開2003-318174號公報
本發明，係有鑑於上述課題，而以提供一種：不會對於能夠涵蓋基板之成膜面全面而將原料氣體有效地作吸附之功能有所損及，而能夠對於裝置本身之設置面積的大型化作防止的真空成膜裝置一事，作為課題。
為了解決上述課題，本發明之真空成膜裝置，係為對於被配置在真空腔內之身為成膜對象的基板而將二種以上之原料氣體交互作供給並藉由化學反應來成膜特定之薄膜的真空成膜裝置，其特徵為，係具備有：平台，係在真空腔內而將基板作保持；和氣體供給手段，係對於此基板而將氣體交互作供給；和排氣手段，係將真空
腔內之氣體作排氣，將被保持在前述平台上之前述基板的成膜面側朝上，前述氣體供給手段，係具備有：被配置在平台之其中一側處，並從基板之其中一側起朝向另外一側地並且沿著此基板之上面地，而將前述氣體之其中一者作噴射之至少一個的噴射噴嘴，前述排氣手段，係具備有：在前述平台之另外一側處而被開設於真空腔之下壁處的排氣口、和被設置在此真空腔之下方並與排氣口相通連之排氣腔、和被與排氣腔作連接並將此排氣腔內作真空抽氣之真空幫浦。
若依據本發明，則藉由噴射噴嘴，由於係被配置在平台之其中一側處並且從基板之其中一側起朝向另外一側地並且沿著此基板之上面地，而供給特定之氣體，並且將與成為較真空腔之壓力而更低之壓力的排氣腔相通之排氣口設置在平台之另外一側處，而將通過了基板後之氣體積極地經由排氣口來排氣至排氣腔中，因此，係能夠涵蓋基板之成膜面全面而將原料氣體有效地作吸附。於此情況，由於係採用將排氣腔設置在真空腔之下方，並將噴射噴嘴配置在真空腔內，並且能夠將對於此噴射噴嘴供給特定之氣體的氣體供給管從真空腔之下方來作連接之構成，因此，係並不需要將配管或排氣管等的零件從真空腔之壁面起而朝向側方向延伸出去地作設置，而不會有使裝置之設置面積變大的情況，進而，就算是在設為叢集工具用之成膜模組的情況時，也不會受到特別的限制。
又，在本發明中，較理想，係設為下述之構
成：亦即是，前述噴射噴嘴，係由被立起設置於前述平台之下面的基部、和從此基部起而連續並朝向平台之其中一側而作了彎曲的噴嘴部，所構成者，噴嘴部，係從此噴嘴部而觀察時，為具備有與在基板部分處之最大長度同等以上的長度，在平台側之端部處，係於其之長邊方向上，空出有特定間隔地而列設置有複數之噴射口。又，較理想，前述排氣口，係從噴嘴部而觀察時，為具備有與在基板部分處之最大長度同等以上的長度。若依據此構成，則由於氣體係涵蓋基板之成膜面全面地而均一流動，因此，係能夠涵蓋基板之成膜面全面而將原料氣體作吸附，並且，並未被成膜面所吸附之氣體，係只要通過基板便能夠立即被作排氣。
於此，如同上述一般，當對於被配置在真空腔內之身為成膜對象之基板而將二種以上的原料氣體交互作供給並藉由化學反應而成膜特定之薄膜的情況時，若是對於在切換氣體種類時而將之前的氣體作排氣一事作考慮，則若是真空腔之容積越小，越能將排氣時間縮短並使生產性提升。藉由將真空腔之容積縮小，亦能夠抑制氣體之使用量。另一方面，若是將真空腔內之容積過度縮小，則由真空機器人所進行之對於平台的基板之搬送或搬出係變得困難。因此，若是採用下述之構成，亦即是，係更進而具備有：被配置在真空腔內之上下一對的上隔壁和下隔壁；和能夠與此些之上隔壁、下隔壁相互近接、分離地而作相對移動之驅動手段，並且，係設置有：週側壁，係若
是對於上隔壁以及下隔壁之至少其中一方的週緣部處而朝向相互近接之方向作相對移動，則會將包含噴射噴嘴之平台的周圍作包圍並以較真空腔之容積更小之容積而區劃出從真空腔來作了隔絕的成膜空間，則在成膜時，係能夠設為容積為小之成膜空間，並且，在基板之搬送時，係能夠確保充分的搬送空間，而為有利。
M‧‧‧真空成膜裝置
1‧‧‧真空腔
11‧‧‧下隔壁(平台)
2‧‧‧平台
3‧‧‧氣體供給手段
31、32‧‧‧噴射噴嘴
7‧‧‧排氣手段
71‧‧‧排氣口
73‧‧‧排氣腔
74‧‧‧真空幫浦
[圖1](a)，係為對本發明之真空成膜裝置的構成作展示之模式剖面圖。(b)，係為沿著(a)之Ib-Ib線的剖面圖。
[圖2]噴射噴嘴之正面圖。
[圖3]對於原料氣體之供給作說明的區塊圖。
[圖4]對本發明之真空成膜裝置的其他構成作展示之模式剖面圖。
以下，參考圖面，針對將成膜對象設為矩形且為玻璃製之基板W，並對於此基板W，而將二種類之氣體中的第1原料氣體設為三甲基鋁(TMA)，並將第2原料氣體設為水蒸氣氣體，而將此些之原料氣體交互作供給並在基板表面上形成氧化鋁(Al2O3)的情況為例，來對於本發明之實施形態的真空成膜裝置作說明。於以下，係
將圖1中之基板W的成膜面側設為上，並準據於此而使用左、右、下、前、後之代表方向的用語。
參考圖1，M，係為本實施形態之真空成膜裝置。真空成膜裝置M，係具備有特定容積之真空腔1。在真空腔1內之下壁內面處，係被設置有較此內面之面積而更小的下隔壁11。在下隔壁11之週緣部處，係朝向上方而突出設置地來一體性地形成有週側壁12。在下隔壁11之週側壁12的內側部分處，係被設置有將基板W使其之成膜面側朝上地來作保持之平台2。在平台2中，係被組入有電阻加熱式之加熱器21，在成膜時係成為能夠將基板W加熱至特定溫度。
在下隔壁11之週側壁12的內側部分且為平台2之右側處，係被設置有作為氣體供給手段3之第1以及第2的兩噴射噴嘴31、32。兩噴射噴嘴31、32係具備有略相同之形態，如圖2中所示一般，噴射噴嘴31(32)，係由貫通真空腔1之下壁以及下隔壁11而立起設置的筒狀之基部31a(32a)、和在此基部31a處，一面隨著朝向上方而作擴徑一面連續性地一體性形成，並使其之前端部朝向平台2側而作彎折的噴嘴部31b(32b)，所構成者。噴嘴部31b之前後方向的長度L1，係以具備有與此相對向之基板W的一邊之長度L2同等以上之長度的方式而形成之。於此情況，基板W之上述一邊，係成為從噴嘴部31b而觀察時之基板W部分處的最大長度。另外，當基板W為圓形的情況時，其之直徑係成為朝向
噴嘴部31b之基板W部分處的最大長度。又，在噴嘴部31b之平台2側的端部處，複數之區隔板31c(32c)係以等間隔而被作配置，並以在其之長邊方向上而空出有特定間隔地來列設複數之噴射口的方式，而被分割為複數之噴射口31d(32d)。之後，若是對於基部31a之下端而供給原料氣體，則氣體係在此基部31a之上部處而一旦擴散，之後從各噴射口31d而略均等地作噴射。
第1以及第2之兩噴射噴嘴31、32，係以使各噴射口31d位置在鉛直方向之同一平面內的方式，而將噴嘴部31b、32b上下重疊地作配置。於此情況，位置在下側之第1噴射噴嘴31的各噴射口31d，係以位置在與基板W之上面同一平面上的方式而被作設置。在基部31a之從真空腔1的下面而突出之部分處，係分別被連接有從第1原料氣體之氣體源43a而來之第1氣體供給管4a、和從第2原料氣體之氣體源43b而來之第2氣體供給管4b。
如圖3中所示一般，在第1氣體供給管4a處，係分別被中介設置有緩衝槽41a、和此緩衝槽41a之上游側以及下游側的開閉閥42a、42b、以及真空計G，並與第1原料氣體之氣體源43a相通連。另一方面，在第2氣體供給管4b處，亦係分別被中介設置有緩衝槽41b、和此緩衝槽41b之上游側以及下游側的開閉閥42c、42d、以及真空計G，並與第2原料氣體之氣體源43b相通連。並且，係成為將預先被填充在各緩衝槽41a、41b
內之第1原料氣體和第2原料氣體交互作供給。另外，在氣體源43a、43b中，係可收容氣相狀態之原料氣體，亦可構成為使液相以及固相之原料氣化並得到原料氣體。
又，在第1氣體供給管4a和第2氣體供給管4b處，係被連接有將氮氣或氬氣等之惰性氣體作導入之中介設置有開閉閥51a、51b和質量流控制器52的從惰性氣體源53而來之惰性氣體導入管5，在成膜中，係恆常將惰性氣體導入至真空腔1內，並構成為例如在將第1原料氣體對於基板W而作了供給之後，於將第2原料氣體對於基板W作供給之前，能夠先藉由惰性氣體來將真空腔1一旦置換為惰性氣體氛圍。另外，亦可使第2氣體供給管4b在緩衝槽41b和下游側之開閉閥42d之間而作分歧，並將此分歧出之旁通管6，經由開閉閥61來與後述之排氣腔作連接。
在下隔壁11之週側壁12的內側部分且為平台2之左側處，係貫通真空腔1之下壁以及下隔壁11地而被開設有作為排氣手段7之排氣口71。排氣口71之前後方向的長度L3，係以具備有與此相對向之基板W的一邊之長度L2同等以上之長度的方式而形成之。而，此排氣口71，係與被設置在真空腔1之下壁外側處的排氣腔72相通連。在排氣腔72處，係透過其他之排氣管73而被連接有真空幫浦74。作為真空幫浦74，係利用有渦輪分子幫浦或旋轉幫浦等之週知之物，又，在排氣管73處，係亦可具備有對於排氣速度作調節之調節閥。又，作
為排氣腔72，係可利用以筒狀構件所構成者，並以朝向鉛直方向延伸的方式而被吊設有排氣管73。於此情況，排氣腔72，係對於氣體流量等作考慮而對於其之容積作設定。
在真空腔1內之上部處，係與下隔壁11相對向地而被設置有上隔壁13。上隔壁13，係被吊設於貫通真空腔1之上壁地作設置之複數根的驅動軸81處，於其之內部，係內藏有省略圖示之加熱器。在延伸至真空腔1外之驅動軸81的部分處，係外插有伸縮管82，並被與直動馬達等之驅動手段83作連接。藉由此驅動手段83，上隔壁13，係能夠在搬送位置和成膜位置之間作上下移動，該搬送位置，係為上隔壁13退避至真空腔1內之上側處而能夠在基板W之搬送時確保充分之搬送空間之位置，該成膜位置，係為使此上壁部13之週緣部與週側壁12之上面12a相密接並包圍包含有噴射噴嘴31、32以及排氣口71之平台2的周圍而以較真空腔1之容積更小的容積來區劃出從真空腔1而作了隔絕的成膜空間之位置。另外，為了將基板W對於平台2作搬出、搬入，在真空腔1之側面處，係被設置有閘閥GV，並且，在平台2處，係被設置有將基板W從此平台2而舉升之省略圖示的舉升銷，而成為能夠藉由圖外之具備有機器手的搬送機器人來將基板W作搬送。
接著，針對由本實施形態之真空成膜裝置所致的對於基板W之成膜處理作說明。在圖1中所示之狀
態下，真空成膜裝置M，係使全部的開閉閥42a~42d作閉閥，並在上隔壁13位置於搬送位置處的狀態下，藉由真空幫浦74來將其之內部真空排氣至特定之壓力並成為待機狀態。接著，藉由省略圖示之搬送機器人來將基板W一直搬送至平台2之正上方，並遞交至舉升銷處，之後，載置在平台2上。於此情況，係亦可藉由靜電吸盤等來作吸附。若是基板W被載置在平台2上，則係藉由驅動手段83來使上隔壁13朝向移動，並移動至成膜位置處。此時，在緩衝槽41a、41b處，係僅將上游側之開閉閥42a、42c開閥並將第1原料氣體和第2原料氣體分別作填充，若是真空計G之測定值到達特定值，則兩開閉閥42a、42c係被閉閥。
當開始成膜時，係將下游側之開閉閥42b和惰性氣體用之開閉閥51a、51b開閥，並將緩衝槽41a內之第1原料氣體和惰性氣體供給至基板W表面，而使此第1原料氣體化學吸附於處理表面上，並形成第1原料氣體之原子之層。若是緩衝槽41a內之第1原料氣體被供給至基板W表面，則係僅將下游側之開閉閥42b閉閥，並將基板W表面之氣體氛圍藉由惰性氣體來作置換。接著，若是將基板W表面之氣體氛圍藉由惰性氣體來作置換，則係將下游側之開閉閥42d開閥，並將緩衝槽41b內之第2原料氣體和惰性氣體對於基板W表面作供給，而使其與吸附在基板W表面上之第1原料氣體產生反應，並形成第2原料氣體的原子之層。此時，在緩衝槽41a
處，係僅將上游側之開閉閥42a開閥並將第1原料氣體作填充，若是真空計G之測定值到達特定值，則開閉閥42a係被閉閥。反覆進行此一連串之操作，而將二種以上之原料氣體交互作供給並藉由化學反應而成膜氧化鋁。
若依據上述實施形態，則藉由噴射噴嘴31、32，由於係被配置在平台2之其中一側處並且從基板W之其中一側起朝向另外一側地並且沿著此基板W之上面地，而供給特定之氣體，並且將與成為較真空腔1之壓力而更低之壓力的排氣腔72相通之排氣口71設置在平台2之另外一側處，而將通過了基板W後之氣體積極地經由排氣口71來排氣至排氣腔72中，因此，係能夠涵蓋基板W之成膜面全面而將原料氣體有效地作吸附。於此情況，由於係採用將排氣腔72設置在真空腔1之下方，並將噴射噴嘴31、32配置在真空腔1內，並且能夠將對於此噴射噴嘴31、32供給特定之氣體的氣體供給管4a、4b從真空腔1之下方來作連接之構成，因此，係並不需要將配管或排氣管等的零件從真空腔1之壁面起而朝向側方向延伸出去地作設置，而不會有使裝置之設置面積變大的情況，進而，就算是在設為叢集工具用之成膜模組的情況時，也不會受到特別的限制。
又，藉由將噴射噴嘴31、32以及排氣手段7如同上述一般地來構成，由於氣體係涵蓋基板W之成膜面全面地而均一流動，因此，係能夠涵蓋基板W之成膜面全面而將原料氣體作吸附，並且，並未被成膜面所吸附
之氣體，係只要通過基板W便能夠立即被作排氣。
進而，藉由在真空腔1內設置上下移動之上隔壁13以及下隔壁11，在成膜時係能夠設為容積為小之成膜空間，藉由此，係能夠將排氣時間縮短並使生產性提升，且能夠抑制氣體之使用量，另一方面，在基板W之搬送時，係能夠確保充分之搬送空間，而為有利。
以上，雖係針對本發明之實施形態作了說明，但是，本發明，係並不被限定於上述形態。在上述實施形態中，雖係為了涵蓋基板W之成膜面全面而均一地供給原料氣體，而以設置有與基板W之最大長度同等以上的噴射口31d、32d者為例來作了說明，但是，係並非為被限定於此，例如，係亦可在基板W之長邊方向上而列設複數根之氣體管，又，亦可在噴嘴部31b、32b之平台2側的端部處，設置於長邊方向上以等間隔而列設有透孔的板狀構件，並以在其之長邊方向上而空出有特定間隔地來列設複數之噴射口的方式來構成之。又，亦可將排氣口71藉由複數之排氣口來構成。
進而，在上述實施形態中，雖係以設置2個的噴射噴嘴並將2種類之原料氣體作導入者為例來作了說明，但是，係並不被限定於此，亦可藉由單一之噴射噴嘴來導入複數種的原料氣體。又，雖係針對將上隔壁13設為板狀構件並使其上下移動者為例來作了說明，但是，係並不被限定於此。例如，亦可將週壁部形成在上隔壁13之下面週緣部處，於此情況，係能夠使真空腔1之下壁具
有作為下隔壁11之功能並省略之。
在上述實施形態中，雖係以藉由設置在下隔壁11上之平台2來將基板W作保持的情況為例來作了說明，但是，亦可如圖4中所示一般，設為藉由身為平台之下隔壁11來將基板W直接作保持。於此情況，係只要在下隔壁11和真空腔1的下壁之間設置加熱器21即可，真空成膜裝置M2，係在形成餘下隔壁11之下面的凹部11a中具備有加熱器21。又，基板W係並不被限定於玻璃製者，例如亦可為矽製者。於此情況，係亦可在將基板W保持在搬送托盤上的狀態下，而搬送至平台2或者是下隔壁11上。
M‧‧‧真空成膜裝置
1‧‧‧真空腔
2‧‧‧平台
3‧‧‧氣體供給手段
7‧‧‧排氣手段
8、11‧‧‧下隔壁(平台)
12‧‧‧週側壁
12a‧‧‧上面
13‧‧‧隔壁
21‧‧‧加熱器
31、32‧‧‧噴射噴嘴
31a‧‧‧基部
31b‧‧‧噴嘴部
32a‧‧‧基部
32b‧‧‧噴嘴部
71‧‧‧排氣口
72‧‧‧排氣腔
73‧‧‧排氣管
74‧‧‧真空幫浦
81‧‧‧驅動軸
82‧‧‧伸縮管
83‧‧‧驅動手段
GV‧‧‧閘閥
W‧‧‧基板
Claims (4)
- 一種真空成膜裝置，係為對於被配置在真空腔內之身為成膜對象的基板而將二種以上之氣體交互作供給並藉由化學反應來成膜特定之薄膜的真空成膜裝置，其特徵為，係具備有：平台，係在真空腔內而將基板作保持；和氣體供給手段，係對於此基板而將氣體交互作供給；和排氣手段，係將真空腔內之氣體作排氣，將被保持在前述平台上之前述基板的成膜面側朝上，前述氣體供給手段，係具備有：被配置在平台之其中一側處，並從基板之其中一側起朝向另外一側地並且沿著此基板之上面地，而將前述氣體之其中一者作噴射之至少一個的噴射噴嘴，前述排氣手段，係具備有：在前述平台之另外一側處而被開設於真空腔之下壁處的排氣口、和被設置在此真空腔之下方並與排氣口相通連之排氣腔、和被與排氣腔作連接並將此排氣腔內作真空抽氣之真空幫浦。
- 如申請專利範圍第1項所記載之真空成膜裝置，其中，前述噴射噴嘴，係由被立起設置於前述平台之下面的基部、和從此基部起而連續並朝向平台之其中一側而作了彎曲的噴嘴部，所構成者，噴嘴部，係從此噴嘴部而觀察時，為具備有與在基板部分處之最大長度同等以上的長度，在平台側之端部處，係於其之長邊方向上，空出有特 定間隔地而列設置有複數之噴射口。
- 如申請專利範圍第1項或第2項所記載之真空成膜裝置，其中，前述排氣口，係從噴嘴部而觀察時，為具備有與在基板部分處之最大長度同等以上的長度。
- 如申請專利範圍第1項或第2項所記載之真空成膜裝置，其中，係更進而具備有：被配置在前述真空腔內之上下一對的上隔壁和下隔壁；和能夠與此些之上隔壁、下隔壁相互近接、分離地而作相對移動之驅動手段，並且，係設置有：週側壁，係若是對於上隔壁以及下隔壁之至少其中一方的週緣部處而朝向相互近接之方向作相對移動，則會將包含噴射噴嘴之平台的周圍作包圍並以較真空腔之容積更小之容積而區劃出從真空腔來作了隔絕的成膜空間。
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| JP5573772B2 (ja) * | 2010-06-22 | 2014-08-20 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP5687547B2 (ja) * | 2010-06-28 | 2015-03-18 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
| KR101313262B1 (ko) * | 2010-07-12 | 2013-09-30 | 삼성전자주식회사 | 화학 기상 증착 장치 및 이를 이용한 반도체 에피 박막의 제조 방법 |
-
2012
- 2012-01-25 JP JP2012012749A patent/JP2013151720A/ja active Pending
-
2013
- 2013-01-07 US US13/735,623 patent/US20130186340A1/en not_active Abandoned
- 2013-01-22 CN CN2013100228441A patent/CN103225073A/zh active Pending
- 2013-01-23 TW TW102102462A patent/TWI564429B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273515A (ja) * | 2006-03-30 | 2007-10-18 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013151720A (ja) | 2013-08-08 |
| US20130186340A1 (en) | 2013-07-25 |
| TW201350618A (zh) | 2013-12-16 |
| CN103225073A (zh) | 2013-07-31 |
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