JP7361599B2 - 露光装置および物品製造方法 - Google Patents

露光装置および物品製造方法 Download PDF

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Publication number
JP7361599B2
JP7361599B2 JP2019236968A JP2019236968A JP7361599B2 JP 7361599 B2 JP7361599 B2 JP 7361599B2 JP 2019236968 A JP2019236968 A JP 2019236968A JP 2019236968 A JP2019236968 A JP 2019236968A JP 7361599 B2 JP7361599 B2 JP 7361599B2
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JP
Japan
Prior art keywords
mark
marks
sub
exposure apparatus
substrate
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JP2019236968A
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English (en)
Japanese (ja)
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JP2021105665A (ja
Inventor
正裕 伊藤
智康 畑
俊郎 有井
博一 草柳
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2019236968A priority Critical patent/JP7361599B2/ja
Priority to TW109141706A priority patent/TWI821617B/zh
Priority to KR1020200169142A priority patent/KR20210083168A/ko
Priority to CN202011526977.9A priority patent/CN113050394B/zh
Publication of JP2021105665A publication Critical patent/JP2021105665A/ja
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Publication of JP7361599B2 publication Critical patent/JP7361599B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
  • Developing Agents For Electrophotography (AREA)
JP2019236968A 2019-12-26 2019-12-26 露光装置および物品製造方法 Active JP7361599B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019236968A JP7361599B2 (ja) 2019-12-26 2019-12-26 露光装置および物品製造方法
TW109141706A TWI821617B (zh) 2019-12-26 2020-11-27 曝光裝置以及物品製造方法
KR1020200169142A KR20210083168A (ko) 2019-12-26 2020-12-07 노광 장치 및 물품제조방법
CN202011526977.9A CN113050394B (zh) 2019-12-26 2020-12-22 曝光装置以及物品制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019236968A JP7361599B2 (ja) 2019-12-26 2019-12-26 露光装置および物品製造方法

Publications (2)

Publication Number Publication Date
JP2021105665A JP2021105665A (ja) 2021-07-26
JP7361599B2 true JP7361599B2 (ja) 2023-10-16

Family

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Country Status (4)

Country Link
JP (1) JP7361599B2 (zh)
KR (1) KR20210083168A (zh)
CN (1) CN113050394B (zh)
TW (1) TWI821617B (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000030163A1 (fr) 1998-11-18 2000-05-25 Nikon Corporation Procede et dispositif d'exposition
WO2006009188A1 (ja) 2004-07-23 2006-01-26 Nikon Corporation 像面計測方法、露光方法及びデバイス製造方法、並びに露光装置
JP2008034537A (ja) 2006-07-27 2008-02-14 Nikon Corp 管理方法
JP2010123793A (ja) 2008-11-20 2010-06-03 Nikon Corp 光学特性計測方法、露光方法、及びデバイス製造方法
US20100209831A1 (en) 2009-02-18 2010-08-19 Jin Choi Method for correcting a position error of lithography apparatus
JP2011049284A (ja) 2009-08-26 2011-03-10 Nikon Corp 計測方法及び装置、並びに露光方法及び装置
WO2011087129A1 (ja) 2010-01-18 2011-07-21 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
JP2011222921A (ja) 2010-04-14 2011-11-04 Nikon Corp 光学特性計測方法及び装置、並びに露光方法及び装置
JP2012235065A (ja) 2011-05-09 2012-11-29 Canon Inc 露光装置、および、デバイス製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130181A (ja) * 1994-10-28 1996-05-21 Nikon Corp 投影露光装置
JP3506155B2 (ja) 1995-02-21 2004-03-15 株式会社ニコン 投影露光装置
JPH1027736A (ja) * 1996-07-09 1998-01-27 Nikon Corp 投影露光装置
JP3612903B2 (ja) * 1996-12-06 2005-01-26 株式会社ニコン 収差測定方法及び収差測定装置並びにそれを備えた露光装置及びデバイス製造方法
WO2002025711A1 (fr) * 2000-09-21 2002-03-28 Nikon Corporation Procede de mesure des caracteristiques d'une image, et procede d'exposition
JP2004006527A (ja) * 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
JP3962648B2 (ja) 2002-07-30 2007-08-22 キヤノン株式会社 ディストーション計測方法と露光装置
KR102357577B1 (ko) * 2014-08-28 2022-01-28 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치, 투영 노광 방법, 투영 노광 장치용 포토마스크, 및 기판의 제조 방법
JP6552312B2 (ja) * 2015-07-16 2019-07-31 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法
JP6774269B2 (ja) * 2016-08-26 2020-10-21 キヤノン株式会社 計測方法、計測装置、露光装置及び物品の製造方法
JP6882091B2 (ja) * 2017-06-21 2021-06-02 キヤノン株式会社 露光装置及び物品の製造方法
JP6978926B2 (ja) * 2017-12-18 2021-12-08 キヤノン株式会社 計測方法、計測装置、露光装置、および物品製造方法
KR20200119235A (ko) * 2018-02-08 2020-10-19 가부시키가이샤 브이 테크놀로지 근접 노광 장치, 근접 노광 방법, 및 근접 노광 장치용 광조사 장치
JP7075278B2 (ja) * 2018-05-08 2022-05-25 キヤノン株式会社 計測装置、露光装置及び物品の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000030163A1 (fr) 1998-11-18 2000-05-25 Nikon Corporation Procede et dispositif d'exposition
WO2006009188A1 (ja) 2004-07-23 2006-01-26 Nikon Corporation 像面計測方法、露光方法及びデバイス製造方法、並びに露光装置
JP2008034537A (ja) 2006-07-27 2008-02-14 Nikon Corp 管理方法
JP2010123793A (ja) 2008-11-20 2010-06-03 Nikon Corp 光学特性計測方法、露光方法、及びデバイス製造方法
US20100209831A1 (en) 2009-02-18 2010-08-19 Jin Choi Method for correcting a position error of lithography apparatus
JP2011049284A (ja) 2009-08-26 2011-03-10 Nikon Corp 計測方法及び装置、並びに露光方法及び装置
WO2011087129A1 (ja) 2010-01-18 2011-07-21 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
JP2011222921A (ja) 2010-04-14 2011-11-04 Nikon Corp 光学特性計測方法及び装置、並びに露光方法及び装置
JP2012235065A (ja) 2011-05-09 2012-11-29 Canon Inc 露光装置、および、デバイス製造方法

Also Published As

Publication number Publication date
TW202125588A (zh) 2021-07-01
TWI821617B (zh) 2023-11-11
KR20210083168A (ko) 2021-07-06
JP2021105665A (ja) 2021-07-26
CN113050394B (zh) 2024-11-01
CN113050394A (zh) 2021-06-29

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