JP7075278B2 - 計測装置、露光装置及び物品の製造方法 - Google Patents
計測装置、露光装置及び物品の製造方法 Download PDFInfo
- Publication number
- JP7075278B2 JP7075278B2 JP2018090109A JP2018090109A JP7075278B2 JP 7075278 B2 JP7075278 B2 JP 7075278B2 JP 2018090109 A JP2018090109 A JP 2018090109A JP 2018090109 A JP2018090109 A JP 2018090109A JP 7075278 B2 JP7075278 B2 JP 7075278B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- dimming
- wavelength
- filter
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
- G02B26/023—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light comprising movable attenuating elements, e.g. neutral density filters
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7007—Alignment other than original with workpiece
- G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Public Health (AREA)
- Optics & Photonics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing & Machinery (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Astronomy & Astrophysics (AREA)
- Spectroscopy & Molecular Physics (AREA)
Description
Claims (16)
- 基板のマークを検出して前記基板の位置を計測する計測装置であって、
前記マークを照明するための光を出力する光源と、前記マークを撮像する撮像素子との間の光路に配置され、光を通過させる波長帯が互いに異なる複数の波長フィルタ領域を含む第1フィルタ部と、
前記光源と前記撮像素子との間の光路に配置され、光を減光して通過させる複数の減光フィルタ領域を含む第2フィルタ部と、
前記複数の波長フィルタ領域のそれぞれを通過した光の波長帯に対する前記複数の減光フィルタ領域のそれぞれの透過率を表すデータを取得する取得部と、
前記取得部で取得されたデータに基づいて、前記複数の減光フィルタ領域から、前記複数の波長フィルタ領域のうちの1つの波長フィルタ領域とともに前記光路上に配置される1つの減光フィルタ領域を選択する選択部と、
を有することを特徴とする計測装置。 - 前記選択部は、前記複数の波長フィルタ領域から、前記マークを照明すべき光の波長帯に対応する前記1つの波長フィルタ領域を選択することを特徴とする請求項1に記載の計測装置。
- 前記選択部は、前記1つの減光フィルタ領域を通過して前記マークを照明する光の光量が前記撮像素子で検出可能な光量範囲に収まるように、前記1つの減光フィルタ領域を選択することを特徴とする請求項1又は2に記載の計測装置。
- 前記基板が配置される面に配置された基準マークと、
光量を検出するセンサと、を更に有し、
前記取得部は、前記複数の波長フィルタ領域のそれぞれと前記複数の減光フィルタ領域のそれぞれとの組み合わせを変更しながら、当該組み合わせの波長フィルタ領域及び減光フィルタ領域を通過した光で前記基準マークを照明し、前記基準マークからの光の光量を前記センサで検出することで、前記データを取得することを特徴とする請求項1乃至3のうちいずれか1項に記載の計測装置。 - 前記取得部は、前記基板の位置を計測する前に、前記データを取得することを特徴とする請求項1乃至4のうちいずれか1項に記載の計測装置。
- 前記第1フィルタ部は、前記マークを照明する光の波長帯を400nm以上1200nm以下の範囲で選択可能なように前記複数の波長フィルタ領域を含むことを特徴とする請求項1乃至5のうちいずれか1項に記載の計測装置。
- 前記複数の波長フィルタ領域のそれぞれが通過させる光の波長帯の幅は、100nm以上150nm以下であることを特徴とする請求項1乃至6のうちいずれか1項に記載の計測装置。
- 前記光源の出力及び前記撮像素子の蓄積時間の少なくとも一方を制御することで、前記1つの波長フィルタ領域を通過した光を調光する調光部を更に有することを特徴とする請求項1乃至7のうちいずれか1項に記載の計測装置。
- 前記複数の減光フィルタ領域のそれぞれは、金属層を含む膜で構成されていることを特徴とする請求項1乃至8のうちいずれか1項に記載の計測装置。
- 前記複数の減光フィルタ領域のそれぞれは、互いに異なる開口率を有するメッシュで構成されていることを特徴とする請求項1乃至8のうちいずれか1項に記載の計測装置。
- 前記複数の減光フィルタ領域は、互いに連続的に接続して設けられていることを特徴とする請求項1乃至8のうちいずれか1項に記載の計測装置。
- 前記複数の波長フィルタ領域のうち1つの波長フィルタ領域を選択的に光路上に配置するように前記第1フィルタ部を駆動する第1駆動部と、
前記複数の減光フィルタ領域のうち1つの減光フィルタ領域を選択的に光路上に配置するように前記第2フィルタ部を駆動する第2駆動部と、
入力信号に基づいて、前記1つの波長フィルタ領域を前記光路上に配置すべく前記第1駆動部を制御するとともに、前記選択部によって選択された前記1つの減光フィルタ領域を前記光路上に配置すべく前記第2駆動部を制御する制御部と、
を更に有することを特徴とする請求項1乃至11のうちいずれか1項に記載の計測装置。 - 前記撮像素子からの出力信号に基づいて、前記基板の位置を求める演算部を更に有することを特徴とする請求項1乃至12のうちいずれか1項に記載の計測装置。
- 基板のマークを検出して前記基板の位置を計測する計測装置であって、
前記マークを照明するための光を出力する光源と、前記マークを撮像する撮像素子との間の光路に配置され、光を減光して通過させる複数の減光フィルタ領域を含むフィルタ部と、
前記マークを照明すべき光の波長帯に対する前記複数の減光フィルタ領域のそれぞれの透過率を表すデータを取得し、前記データに基づいて、前記複数の減光フィルタ領域から、前記マークを照明する光の調光に用いる1つの減光フィルタ領域を選択する選択部と、
を有することを特徴とする計測装置。 - レチクルのパターンを基板に投影する投影光学系と、
前記基板を保持するステージと、
前記基板の位置を計測する請求項1乃至14のうちいずれか1項に記載の計測装置と、
前記計測装置の計測結果に基づいて、前記ステージの位置を制御する制御部と、
を有することを特徴とする露光装置。 - 請求項15に記載の露光装置を用いて基板を露光する工程と、
露光した前記基板を現像する工程と、
現像された前記基板から物品を製造する工程と、
を有することを特徴とする物品の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018090109A JP7075278B2 (ja) | 2018-05-08 | 2018-05-08 | 計測装置、露光装置及び物品の製造方法 |
TW108113724A TWI729380B (zh) | 2018-05-08 | 2019-04-19 | 測量設備、曝光設備和製造物品的方法 |
US16/394,087 US10656541B2 (en) | 2018-05-08 | 2019-04-25 | Measurement apparatus, exposure apparatus, and method of manufacturing article |
KR1020190051321A KR102517154B1 (ko) | 2018-05-08 | 2019-05-02 | 계측 장치, 노광 장치, 및 물품 제조 방법 |
CN201910367808.6A CN110456618A (zh) | 2018-05-08 | 2019-05-05 | 测量装置、曝光装置和制造物品的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018090109A JP7075278B2 (ja) | 2018-05-08 | 2018-05-08 | 計測装置、露光装置及び物品の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019196943A JP2019196943A (ja) | 2019-11-14 |
JP7075278B2 true JP7075278B2 (ja) | 2022-05-25 |
Family
ID=68463554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018090109A Active JP7075278B2 (ja) | 2018-05-08 | 2018-05-08 | 計測装置、露光装置及び物品の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10656541B2 (ja) |
JP (1) | JP7075278B2 (ja) |
KR (1) | KR102517154B1 (ja) |
CN (1) | CN110456618A (ja) |
TW (1) | TWI729380B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10757340B2 (en) | 2018-03-09 | 2020-08-25 | Pony Ai Inc. | Adaptive filter system for self-driving vehicle |
JP2020041859A (ja) * | 2018-09-07 | 2020-03-19 | キオクシア株式会社 | 位置計測方法、位置計測装置および半導体装置の製造方法 |
JP2022117091A (ja) * | 2021-01-29 | 2022-08-10 | キヤノン株式会社 | 計測装置、リソグラフィ装置及び物品の製造方法 |
JP7238041B2 (ja) * | 2021-07-29 | 2023-03-13 | キヤノン株式会社 | 計測装置、計測方法、基板処理装置、および物品の製造方法 |
JP7410625B2 (ja) * | 2021-09-28 | 2024-01-10 | キヤノン株式会社 | 照明装置、計測装置、基板処理装置、および物品の製造方法 |
CN113960804B (zh) * | 2021-10-21 | 2023-08-08 | 四川大学 | 一种连续光谱色温合成装置及合成方法 |
CN114211629B (zh) * | 2022-02-21 | 2022-05-24 | 沈阳和研科技有限公司 | 双轴划片机的y轴精度对准组件及对准方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031015A (ja) | 1998-07-13 | 2000-01-28 | Nikon Corp | 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法 |
JP2003092248A (ja) | 2001-09-17 | 2003-03-28 | Canon Inc | 位置検出装置、位置決め装置及びそれらの方法並びに露光装置及びデバイスの製造方法 |
JP2010199453A (ja) | 2009-02-27 | 2010-09-09 | Nikon Corp | 検出方法、光学特性計測方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2011040523A (ja) | 2009-08-10 | 2011-02-24 | Canon Inc | 露光装置、及びそれを用いたデバイスの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2569711B2 (ja) * | 1988-04-07 | 1997-01-08 | 株式会社ニコン | 露光制御装置及び該装置による露光方法 |
JP3379200B2 (ja) * | 1994-03-25 | 2003-02-17 | 株式会社ニコン | 位置検出装置 |
JPH08292580A (ja) * | 1995-04-20 | 1996-11-05 | Canon Inc | 露光装置 |
DE19858206C2 (de) * | 1998-12-17 | 2001-10-11 | Leica Microsystems | Verfahren zur Anpassung von Anregungsintensitäten bei einem Multiband-Fluoreszenz-Mikroskop und Multiband-Fluoreszenz-Mikroskop zur Durchführung des Verfahrens |
JP3903761B2 (ja) | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | レ−ザアニ−ル方法およびレ−ザアニ−ル装置 |
JP3826047B2 (ja) * | 2002-02-13 | 2006-09-27 | キヤノン株式会社 | 露光装置、露光方法、及びそれを用いたデバイス製造方法 |
CN102096325B (zh) * | 2009-12-10 | 2013-01-16 | 上海微电子装备有限公司 | 光强衰减装置及其衰减方法 |
JP2012018112A (ja) * | 2010-07-09 | 2012-01-26 | Ricoh Co Ltd | 静電潜像計測装置、静電潜像計測方法及び静電潜像計測プログラム |
JP5346985B2 (ja) * | 2011-05-10 | 2013-11-20 | キヤノン株式会社 | 計測装置、露光装置、デバイスの製造方法及び計測方法 |
JP5162006B2 (ja) * | 2011-06-01 | 2013-03-13 | キヤノン株式会社 | 検出装置、露光装置、および、デバイスの製造方法 |
-
2018
- 2018-05-08 JP JP2018090109A patent/JP7075278B2/ja active Active
-
2019
- 2019-04-19 TW TW108113724A patent/TWI729380B/zh active
- 2019-04-25 US US16/394,087 patent/US10656541B2/en active Active
- 2019-05-02 KR KR1020190051321A patent/KR102517154B1/ko active IP Right Grant
- 2019-05-05 CN CN201910367808.6A patent/CN110456618A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031015A (ja) | 1998-07-13 | 2000-01-28 | Nikon Corp | 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法 |
JP2003092248A (ja) | 2001-09-17 | 2003-03-28 | Canon Inc | 位置検出装置、位置決め装置及びそれらの方法並びに露光装置及びデバイスの製造方法 |
JP2010199453A (ja) | 2009-02-27 | 2010-09-09 | Nikon Corp | 検出方法、光学特性計測方法、露光方法及び露光装置、並びにデバイス製造方法 |
JP2011040523A (ja) | 2009-08-10 | 2011-02-24 | Canon Inc | 露光装置、及びそれを用いたデバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20190346774A1 (en) | 2019-11-14 |
TWI729380B (zh) | 2021-06-01 |
JP2019196943A (ja) | 2019-11-14 |
US10656541B2 (en) | 2020-05-19 |
CN110456618A (zh) | 2019-11-15 |
TW201947330A (zh) | 2019-12-16 |
KR102517154B1 (ko) | 2023-04-04 |
KR20190128564A (ko) | 2019-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7075278B2 (ja) | 計測装置、露光装置及び物品の製造方法 | |
JP5385652B2 (ja) | 位置検出装置、露光装置、位置検出方法、露光方法及びデバイス製造方法 | |
KR100599932B1 (ko) | 광학 결상 시스템에서의 수차 측정 방법 | |
KR100948436B1 (ko) | 노광장치 및 디바이스의 제조방법 | |
US9291921B2 (en) | Detection apparatus, exposure apparatus, device fabrication method and filter to reduce a difference between detected intensity values of lights having different wavelength ranges | |
TWI387045B (zh) | 位置偵測設備的調整方法、曝光設備及裝置製造方法 | |
US9939741B2 (en) | Lithography apparatus, and method of manufacturing article | |
US8345221B2 (en) | Aberration measurement method, exposure apparatus, and device manufacturing method | |
US11169452B2 (en) | Measurement apparatus, exposure apparatus, and method of manufacturing article | |
JP2023125840A (ja) | 計測装置、計測方法、リソグラフィ装置及び物品の製造方法 | |
JP2004279166A (ja) | 位置検出装置 | |
JP6226525B2 (ja) | 露光装置、露光方法、それらを用いたデバイスの製造方法 | |
JPH09171956A (ja) | 露光装置 | |
US20230341786A1 (en) | Calibration method, detection system, exposure apparatus, article manufacturing method, and non-transitory computer-readable storage medium | |
JP2023104683A (ja) | 検出装置、検出方法、露光装置及び物品の製造方法 | |
US10222293B2 (en) | Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light | |
US20100177290A1 (en) | Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method | |
JP2021081659A (ja) | パターン形成装置、及び物品の製造方法 | |
JP2005347593A (ja) | 計測方法及び装置、露光装置、並びに、デバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20210103 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210113 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210419 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220323 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220415 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220513 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7075278 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |