JP7259173B2 - キャパシタ部品 - Google Patents
キャパシタ部品 Download PDFInfo
- Publication number
- JP7259173B2 JP7259173B2 JP2018085866A JP2018085866A JP7259173B2 JP 7259173 B2 JP7259173 B2 JP 7259173B2 JP 2018085866 A JP2018085866 A JP 2018085866A JP 2018085866 A JP2018085866 A JP 2018085866A JP 7259173 B2 JP7259173 B2 JP 7259173B2
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- JP
- Japan
- Prior art keywords
- electrode layer
- porous body
- layer
- pores
- capacitor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 title claims description 64
- 239000011148 porous material Substances 0.000 claims description 50
- 229920001940 conductive polymer Polymers 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 41
- 230000008569 process Effects 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 25
- 238000007743 anodising Methods 0.000 description 15
- 238000003475 lamination Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- -1 aluminum (Al) Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
111、211 本体
112、212 第1電極層
113、213 誘電体層
114、214 第2電極層
115 第1共通電極層
116、222、223、231 絶縁層
120 陽極基板
121、221 金属層
130、230 酸性溶液
131 キャリア
210 積層単位
215、216 外部電極
H1、H2 空孔
Claims (6)
- キャパシタ部品であって、
前記キャパシタ部品の厚さ方向の一側の第1端面が他側の第2端面より大きい多孔性本体と、
前記多孔性本体の空孔の表面及び前記第1端面をカバーする第1電極層と、
前記第1電極層の少なくとも一部をカバーする誘電体層と、
前記誘電体層をカバーし、且つ前記多孔性本体の空孔に充填された形態の第2電極層と、を含み、
前記第2電極層は伝導性ポリマーを含み、
前記第1電極層のうちの前記第1端面をカバーする部分は、前記誘電体層によりカバーされずに露出しており、
前記第1電極層の露出した領域と連結された第1共通電極層をさらに含む、
キャパシタ部品。 - 前記多孔性本体の空孔は、前記多孔性本体を厚さ方向に貫通する形態である、請求項1に記載のキャパシタ部品。
- 前記多孔性本体の空孔は円筒状である、請求項2に記載のキャパシタ部品。
- 前記多孔性本体の空孔は、規則的に配列された形態である、請求項2または3に記載のキャパシタ部品。
- 前記第1共通電極層と前記第2電極層との間に形成された絶縁層をさらに含む、請求項1から4のいずれか一項に記載のキャパシタ部品。
- 前記第1電極層は、前記多孔性本体の空孔の表面全体をカバーする形態である、請求項1から5のいずれか一項に記載のキャパシタ部品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170121757A KR102460748B1 (ko) | 2017-09-21 | 2017-09-21 | 커패시터 부품 |
KR10-2017-0121757 | 2017-09-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019057703A JP2019057703A (ja) | 2019-04-11 |
JP7259173B2 true JP7259173B2 (ja) | 2023-04-18 |
Family
ID=65719425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018085866A Active JP7259173B2 (ja) | 2017-09-21 | 2018-04-26 | キャパシタ部品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10811193B2 (ja) |
JP (1) | JP7259173B2 (ja) |
KR (1) | KR102460748B1 (ja) |
CN (2) | CN109545778B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3723148A1 (en) | 2019-04-08 | 2020-10-14 | Murata Manufacturing Co., Ltd. | Three-dimensional capacitive structures and their manufacturing methods |
WO2021079566A1 (ja) | 2019-10-24 | 2021-04-29 | 株式会社村田製作所 | 複合キャパシタ |
CN112151536B (zh) * | 2020-08-17 | 2022-04-12 | 复旦大学 | 一种纳米电容三维集成结构及其制备方法 |
CN112151539B (zh) * | 2020-09-10 | 2022-04-26 | 复旦大学 | 一种高存储容量纳米电容三维集成结构及其制备方法 |
CN112201655B (zh) * | 2020-09-10 | 2022-04-29 | 复旦大学 | 一种纳米电容三维集成结构及其制作方法 |
KR20220111141A (ko) * | 2021-02-01 | 2022-08-09 | (주)포인트엔지니어링 | 커패시터, 그 제조방법 및 커패시터용 전극 |
KR102519283B1 (ko) * | 2021-02-01 | 2023-04-17 | (주)포인트엔지니어링 | 커패시터 및 그 제조방법 |
KR102460449B1 (ko) * | 2021-03-31 | 2022-10-31 | 한국전자기술연구원 | 고주파 캐패시터 및 이의 제조방법 |
KR20230091307A (ko) | 2021-12-16 | 2023-06-23 | 삼성전기주식회사 | 커패시터 부품 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006041474A (ja) | 2004-07-23 | 2006-02-09 | Samsung Electro Mech Co Ltd | 薄膜型多層セラミックキャパシター及びその製造方法 |
WO2008035536A1 (fr) | 2006-09-21 | 2008-03-27 | Panasonic Corporation | Puce de semi-conducteur, module de montage de semi-conducteur, dispositif de communication mobile, et procédé de production d'une puce de semi-conducteur |
US20110073827A1 (en) | 2009-08-26 | 2011-03-31 | University Of Maryland | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
JP2012079960A (ja) | 2010-10-04 | 2012-04-19 | Denso Corp | キャパシタ構造体およびその製造方法 |
JP2012517717A (ja) | 2009-02-12 | 2012-08-02 | ラオール・コンサルティング・エルエルシー | 焼結ナノ細孔電気キャパシタ、電気化学キャパシタおよびバッテリーならびにその製造方法 |
JP2012195482A (ja) | 2011-03-17 | 2012-10-11 | Taiyo Yuden Co Ltd | コンデンサ構成用ユニット及びコンデンサ |
WO2016181865A1 (ja) | 2015-05-12 | 2016-11-17 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6489385A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Thick film hybrid integrated circuit board |
JP2001015706A (ja) * | 1999-06-30 | 2001-01-19 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR20020078307A (ko) * | 2001-04-09 | 2002-10-18 | 주식회사 하이닉스반도체 | 반도체 소자의 커패시터 제조 방법 |
JP2003249417A (ja) * | 2002-02-25 | 2003-09-05 | Tdk Corp | コンデンサ構造体およびその製造方法 |
KR20050051140A (ko) * | 2003-11-27 | 2005-06-01 | 삼성에스디아이 주식회사 | 커패시터 및 이를 구비한 평판표시장치 |
KR100957763B1 (ko) * | 2006-11-13 | 2010-05-12 | 재단법인서울대학교산학협력재단 | 박막형 다층 세라믹 커패시터 및 그 제조 방법 |
JP4972502B2 (ja) * | 2006-11-24 | 2012-07-11 | 太陽誘電株式会社 | コンデンサ及びコンデンサの製造方法 |
JP5432002B2 (ja) * | 2010-02-25 | 2014-03-05 | 太陽誘電株式会社 | コンデンサ及びその製造方法 |
KR101422923B1 (ko) * | 2012-09-28 | 2014-07-23 | 삼성전기주식회사 | 커패시터 및 이의 제조 방법 |
JP6218558B2 (ja) * | 2013-10-30 | 2017-10-25 | 太陽誘電株式会社 | コンデンサ |
-
2017
- 2017-09-21 KR KR1020170121757A patent/KR102460748B1/ko active IP Right Grant
-
2018
- 2018-04-24 US US15/961,445 patent/US10811193B2/en active Active
- 2018-04-26 JP JP2018085866A patent/JP7259173B2/ja active Active
- 2018-09-17 CN CN201811085958.XA patent/CN109545778B/zh active Active
- 2018-09-17 CN CN202210996546.1A patent/CN115360175A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006041474A (ja) | 2004-07-23 | 2006-02-09 | Samsung Electro Mech Co Ltd | 薄膜型多層セラミックキャパシター及びその製造方法 |
WO2008035536A1 (fr) | 2006-09-21 | 2008-03-27 | Panasonic Corporation | Puce de semi-conducteur, module de montage de semi-conducteur, dispositif de communication mobile, et procédé de production d'une puce de semi-conducteur |
JP2012517717A (ja) | 2009-02-12 | 2012-08-02 | ラオール・コンサルティング・エルエルシー | 焼結ナノ細孔電気キャパシタ、電気化学キャパシタおよびバッテリーならびにその製造方法 |
US20110073827A1 (en) | 2009-08-26 | 2011-03-31 | University Of Maryland | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
JP2012079960A (ja) | 2010-10-04 | 2012-04-19 | Denso Corp | キャパシタ構造体およびその製造方法 |
JP2012195482A (ja) | 2011-03-17 | 2012-10-11 | Taiyo Yuden Co Ltd | コンデンサ構成用ユニット及びコンデンサ |
WO2016181865A1 (ja) | 2015-05-12 | 2016-11-17 | 株式会社村田製作所 | コンデンサおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2019057703A (ja) | 2019-04-11 |
KR102460748B1 (ko) | 2022-10-31 |
KR20190033239A (ko) | 2019-03-29 |
CN109545778A (zh) | 2019-03-29 |
CN115360175A (zh) | 2022-11-18 |
US20190088419A1 (en) | 2019-03-21 |
CN109545778B (zh) | 2022-09-09 |
US10811193B2 (en) | 2020-10-20 |
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