JP2019057703A - キャパシタ部品 - Google Patents
キャパシタ部品 Download PDFInfo
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- JP2019057703A JP2019057703A JP2018085866A JP2018085866A JP2019057703A JP 2019057703 A JP2019057703 A JP 2019057703A JP 2018085866 A JP2018085866 A JP 2018085866A JP 2018085866 A JP2018085866 A JP 2018085866A JP 2019057703 A JP2019057703 A JP 2019057703A
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- electrode layer
- capacitor component
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- 239000003990 capacitor Substances 0.000 title claims abstract description 83
- 239000011148 porous material Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 229920001940 conductive polymer Polymers 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 25
- 238000007743 anodising Methods 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/88—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by patterning layers, e.g. by etching conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
111、211 本体
112、212 第1電極層
113、213 誘電体層
114、214 第2電極層
115 第1共通電極層
116、222、223、231 絶縁層
120 陽極基板
121、221 金属層
130、230 酸性溶液
131 キャリア
210 積層単位
215、216 外部電極
H1、H2 空孔
Claims (24)
- 多孔性本体と、
前記多孔性本体の空孔の表面をカバーする第1電極層と、
前記第1電極層をカバーする誘電体層と、
前記誘電体層をカバーし、且つ前記多孔性本体の空孔に充填された形態の第2電極層と、を含む、キャパシタ部品。 - 前記多孔性本体の空孔は、前記多孔性本体を厚さ方向に貫通する形態である、請求項1に記載のキャパシタ部品。
- 前記多孔性本体の空孔は円筒状である、請求項2に記載のキャパシタ部品。
- 前記多孔性本体の空孔は、規則的に配列された形態である、請求項2または3に記載のキャパシタ部品。
- 前記第1電極層の一部は、前記誘電体層によりカバーされずに露出しており、
前記第1電極層の露出した領域と連結された第1共通電極層をさらに含む、請求項1から4のいずれか一項に記載のキャパシタ部品。 - 前記第1共通電極層と前記第2電極層との間に形成された絶縁層をさらに含む、請求項5に記載のキャパシタ部品。
- 前記第1電極層は、前記多孔性本体の空孔の表面全体をカバーする形態である、請求項1から6のいずれか一項に記載のキャパシタ部品。
- 前記多孔性本体の一部は、前記第1電極層によりカバーされずに露出しており、
前記多孔性本体の露出した領域と連結された金属層をさらに含む、請求項1から4のいずれか一項に記載のキャパシタ部品。 - 前記金属層は、前記多孔性本体の上面及び下面のうち一方の面、並びに側面と接触する形態である、請求項8に記載のキャパシタ部品。
- 前記多孔性本体は、前記金属層をなす物質の陽極酸化体である、請求項8または9に記載のキャパシタ部品。
- 前記第1電極層及び前記誘電体層は、前記金属層と前記第2電極層との間に該当する領域まで延設された、請求項8から10のいずれか一項に記載のキャパシタ部品。
- 前記金属層において前記第1電極層及び前記誘電体層が延設された領域に対応する領域には凹凸が形成され、前記第1電極層及び前記誘電体層は前記金属層の凹凸に沿って形成された、請求項11に記載のキャパシタ部品。
- 前記多孔性本体、第1電極層、誘電体層、第2電極層、及び金属層を一つの積層単位とした場合、前記積層単位は複数積層された形態である、請求項8から12のいずれか一項に記載のキャパシタ部品。
- 前記積層単位は、前記金属層の一側面をカバーする絶縁層をさらに含む、請求項13に記載のキャパシタ部品。
- 前記積層単位の絶縁層は、隣接する他の積層単位の絶縁層と互いに対向する位置に配置された、請求項14に記載のキャパシタ部品。
- 複数の前記積層単位の側面をカバーする第1及び第2外部電極をさらに含む、請求項13から15のいずれか一項に記載のキャパシタ部品。
- 前記第2電極層は伝導性ポリマーを含む、請求項1から16のいずれか一項に記載のキャパシタ部品。
- 前記第2電極層はめっき層である、請求項1に記載のキャパシタ部品。
- 多数の空孔を有する本体と、
前記本体の表面をカバーする第1電極層と、
前記第1電極層をカバーする誘電体層と、
前記本体の多数の空孔を充填する第2電極層と、を含み、
前記本体において前記多数の空孔のうち互いに隣接したものの間の壁は、上部の厚さが下部の厚さよりも薄い形態であり、
前記誘電体層は、前記第1電極層と第2電極層との間に配置され、これらを分離させるキャパシタ部品。 - 前記本体の壁は、金属酸化層を含む、請求項19に記載のキャパシタ部品。
- 前記本体は前記壁を支持するベースをさらに含み、
前記本体のベースは金属からなる、請求項20に記載のキャパシタ部品。 - 前記本体のベースは、前記第1電極層と接触する、請求項21に記載のキャパシタ部品。
- 前記第1電極層は、前記本体を完全に取り囲む、請求項19から22のいずれか一項に記載のキャパシタ部品。
- 前記第2電極層は伝導性ポリマーを含む、請求項19から23のいずれか一項に記載のキャパシタ部品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0121757 | 2017-09-21 | ||
KR1020170121757A KR102460748B1 (ko) | 2017-09-21 | 2017-09-21 | 커패시터 부품 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019057703A true JP2019057703A (ja) | 2019-04-11 |
JP7259173B2 JP7259173B2 (ja) | 2023-04-18 |
Family
ID=65719425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018085866A Active JP7259173B2 (ja) | 2017-09-21 | 2018-04-26 | キャパシタ部品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10811193B2 (ja) |
JP (1) | JP7259173B2 (ja) |
KR (1) | KR102460748B1 (ja) |
CN (2) | CN115360175A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2021079566A1 (ja) * | 2019-10-24 | 2021-04-29 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3723148A1 (en) | 2019-04-08 | 2020-10-14 | Murata Manufacturing Co., Ltd. | Three-dimensional capacitive structures and their manufacturing methods |
CN112151536B (zh) * | 2020-08-17 | 2022-04-12 | 复旦大学 | 一种纳米电容三维集成结构及其制备方法 |
CN112151539B (zh) * | 2020-09-10 | 2022-04-26 | 复旦大学 | 一种高存储容量纳米电容三维集成结构及其制备方法 |
CN112201655B (zh) * | 2020-09-10 | 2022-04-29 | 复旦大学 | 一种纳米电容三维集成结构及其制作方法 |
KR20220111141A (ko) * | 2021-02-01 | 2022-08-09 | (주)포인트엔지니어링 | 커패시터, 그 제조방법 및 커패시터용 전극 |
KR102519283B1 (ko) * | 2021-02-01 | 2023-04-17 | (주)포인트엔지니어링 | 커패시터 및 그 제조방법 |
KR102460449B1 (ko) | 2021-03-31 | 2022-10-31 | 한국전자기술연구원 | 고주파 캐패시터 및 이의 제조방법 |
KR20230091307A (ko) | 2021-12-16 | 2023-06-23 | 삼성전기주식회사 | 커패시터 부품 |
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-
2017
- 2017-09-21 KR KR1020170121757A patent/KR102460748B1/ko active IP Right Grant
-
2018
- 2018-04-24 US US15/961,445 patent/US10811193B2/en active Active
- 2018-04-26 JP JP2018085866A patent/JP7259173B2/ja active Active
- 2018-09-17 CN CN202210996546.1A patent/CN115360175A/zh active Pending
- 2018-09-17 CN CN201811085958.XA patent/CN109545778B/zh active Active
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JPS6489385A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Thick film hybrid integrated circuit board |
JP2006041474A (ja) * | 2004-07-23 | 2006-02-09 | Samsung Electro Mech Co Ltd | 薄膜型多層セラミックキャパシター及びその製造方法 |
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JPWO2021079566A1 (ja) * | 2019-10-24 | 2021-04-29 | ||
US11869719B2 (en) | 2019-10-24 | 2024-01-09 | Murata Manufacturing Co., Ltd. | Composite capacitor |
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US10811193B2 (en) | 2020-10-20 |
CN109545778B (zh) | 2022-09-09 |
KR102460748B1 (ko) | 2022-10-31 |
JP7259173B2 (ja) | 2023-04-18 |
KR20190033239A (ko) | 2019-03-29 |
US20190088419A1 (en) | 2019-03-21 |
CN109545778A (zh) | 2019-03-29 |
CN115360175A (zh) | 2022-11-18 |
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