JP7140148B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents

炭化珪素半導体装置およびその製造方法 Download PDF

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JP7140148B2
JP7140148B2 JP2020008376A JP2020008376A JP7140148B2 JP 7140148 B2 JP7140148 B2 JP 7140148B2 JP 2020008376 A JP2020008376 A JP 2020008376A JP 2020008376 A JP2020008376 A JP 2020008376A JP 7140148 B2 JP7140148 B2 JP 7140148B2
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silicon carbide
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impurity concentration
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JP2020141130A (ja
JP2020141130A5 (https=
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有一 竹内
克己 鈴木
侑佑 山下
武寛 加藤
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Denso Corp
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Denso Corp
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Priority to CN202080016354.9A priority Critical patent/CN113498544B/zh
Priority to CN202311330705.5A priority patent/CN117276345A/zh
Priority to PCT/JP2020/005592 priority patent/WO2020175157A1/ja
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
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    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
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CN202080016354.9A CN113498544B (zh) 2019-02-27 2020-02-13 碳化硅半导体装置及其制造方法
CN202311330705.5A CN117276345A (zh) 2019-02-27 2020-02-13 碳化硅半导体装置的制造方法
PCT/JP2020/005592 WO2020175157A1 (ja) 2019-02-27 2020-02-13 炭化珪素半導体装置およびその製造方法
US17/410,044 US12057498B2 (en) 2019-02-27 2021-08-24 Silicon carbide semiconductor device and method for manufacturing same

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Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112020007709T5 (de) 2020-10-22 2023-08-03 Mitsubishi Electric Corporation Halbleitervorrichtung
JP7563750B2 (ja) * 2021-03-12 2024-10-08 富士電機株式会社 炭化珪素半導体装置の製造方法
JP7613670B2 (ja) 2021-03-19 2025-01-15 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7543960B2 (ja) * 2021-03-25 2024-09-03 株式会社デンソー 半導体装置とその製造方法
JP7582061B2 (ja) * 2021-05-14 2024-11-13 株式会社デンソー 半導体装置
JP7676979B2 (ja) * 2021-06-16 2025-05-15 株式会社デンソー 炭化珪素半導体装置
JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
WO2023042359A1 (ja) * 2021-09-17 2023-03-23 ヌヴォトンテクノロジージャパン株式会社 半導体装置
CN113990923B (zh) * 2021-10-20 2023-04-04 电子科技大学 一种集成沟道二极管的碳化硅双槽mosfet
EP4333078A4 (en) 2021-12-17 2024-10-23 Fuji Electric Co., Ltd. Semiconductor device
KR102593101B1 (ko) * 2022-03-11 2023-10-24 화인칩스 주식회사 파워 모스펫
JP7694816B2 (ja) * 2022-04-14 2025-06-18 株式会社デンソー 半導体装置とその製造方法
JP7757235B2 (ja) * 2022-05-13 2025-10-21 株式会社デンソー 半導体装置とその製造方法
CN114678277B (zh) * 2022-05-27 2022-08-16 深圳平创半导体有限公司 中心注入p+屏蔽区的分裂栅平面mosfet及其制造方法
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JP7841410B2 (ja) * 2022-11-18 2026-04-07 株式会社デンソー 炭化珪素半導体装置
JP7798759B2 (ja) * 2022-12-14 2026-01-14 株式会社デンソー 半導体装置の製造方法
CN116314338B (zh) * 2023-05-18 2023-08-01 深圳平创半导体有限公司 一种半导体结构及其制备方法
DE102023205312A1 (de) 2023-06-07 2024-12-12 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit reduzierter spreizung des flächenspezifischen durchgangswiderstands und mit verbesserter kurzschlussfähigkeit
CN118888592A (zh) * 2024-07-18 2024-11-01 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118437A1 (ja) 2012-02-10 2013-08-15 パナソニック株式会社 半導体装置及びその製造方法
WO2013172079A1 (ja) 2012-05-15 2013-11-21 三菱電機株式会社 半導体装置及びその製造方法
WO2014196164A1 (ja) 2013-06-05 2014-12-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2018082114A (ja) 2016-11-18 2018-05-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2018518063A (ja) 2015-06-05 2018-07-05 セミラボ セミコンダクター フィジックス ラボラトリー カンパニー リミテッドＳＥＭＩＬＡＢ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｐｈｙｓｉｃｓ Ｌａｂｏｒａｔｏｒｙ Ｃｏ．，Ｌｔｄ． 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定
JP2019016775A (ja) 2017-07-07 2019-01-31 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4894104B2 (ja) 2001-07-27 2012-03-14 信越半導体株式会社 シリコンエピタキシャル層のキャリア濃度測定方法
JP5767430B2 (ja) * 2007-08-10 2015-08-19 ローム株式会社 半導体装置および半導体装置の製造方法
JP4793390B2 (ja) * 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2009283540A (ja) * 2008-05-20 2009-12-03 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2010177269A (ja) 2009-01-27 2010-08-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｎ型半導体ウェハの抵抗率測定方法
JP2012169384A (ja) * 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP6479347B2 (ja) * 2014-06-06 2019-03-06 ローム株式会社 ＳｉＣエピタキシャルウェハの製造装置、およびＳｉＣエピタキシャルウェハの製造方法
DE112015004766B4 (de) 2014-10-20 2021-11-18 Mitsubishi Electric Corporation Halbleitervorrichtungen
US10347724B2 (en) * 2015-12-07 2019-07-09 Mitsubishi Electric Corporation Silicon carbide semiconductor device
JP6648743B2 (ja) * 2016-10-05 2020-02-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US10957792B2 (en) * 2018-08-14 2021-03-23 Infineon Technologies Ag Semiconductor device with latchup immunity
JP7243094B2 (ja) * 2018-09-11 2023-03-22 富士電機株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118437A1 (ja) 2012-02-10 2013-08-15 パナソニック株式会社 半導体装置及びその製造方法
WO2013172079A1 (ja) 2012-05-15 2013-11-21 三菱電機株式会社 半導体装置及びその製造方法
WO2014196164A1 (ja) 2013-06-05 2014-12-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP2018518063A (ja) 2015-06-05 2018-07-05 セミラボ セミコンダクター フィジックス ラボラトリー カンパニー リミテッドＳＥＭＩＬＡＢ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｐｈｙｓｉｃｓ Ｌａｂｏｒａｔｏｒｙ Ｃｏ．，Ｌｔｄ． 一定の表面電位コロナ帯電を用いた半導体ドーピングの測定
JP2018082114A (ja) 2016-11-18 2018-05-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2019016775A (ja) 2017-07-07 2019-01-31 株式会社デンソー 半導体装置およびその製造方法

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