CN113498544B - 碳化硅半导体装置及其制造方法 - Google Patents

碳化硅半导体装置及其制造方法 Download PDF

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CN113498544B
CN113498544B CN202080016354.9A CN202080016354A CN113498544B CN 113498544 B CN113498544 B CN 113498544B CN 202080016354 A CN202080016354 A CN 202080016354A CN 113498544 B CN113498544 B CN 113498544B
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CN113498544A (zh
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竹内有一
铃木克己
山下侑佑
加藤武宽
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
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    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
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    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
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    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
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    • H10D64/311—Gate electrodes for field-effect devices
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    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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JP2019-034380 2019-02-27
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JP2020008376A JP7140148B2 (ja) 2019-02-27 2020-01-22 炭化珪素半導体装置およびその製造方法
JP2020-008376 2020-01-22
PCT/JP2020/005592 WO2020175157A1 (ja) 2019-02-27 2020-02-13 炭化珪素半導体装置およびその製造方法

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JP7543960B2 (ja) * 2021-03-25 2024-09-03 株式会社デンソー 半導体装置とその製造方法
JP7582061B2 (ja) * 2021-05-14 2024-11-13 株式会社デンソー 半導体装置
JP7676979B2 (ja) * 2021-06-16 2025-05-15 株式会社デンソー 炭化珪素半導体装置
JP7187620B1 (ja) * 2021-07-13 2022-12-12 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びＳｉＣエピタキシャルウェハの製造方法
WO2023042359A1 (ja) * 2021-09-17 2023-03-23 ヌヴォトンテクノロジージャパン株式会社 半導体装置
CN113990923B (zh) * 2021-10-20 2023-04-04 电子科技大学 一种集成沟道二极管的碳化硅双槽mosfet
EP4333078A4 (en) 2021-12-17 2024-10-23 Fuji Electric Co., Ltd. Semiconductor device
KR102593101B1 (ko) * 2022-03-11 2023-10-24 화인칩스 주식회사 파워 모스펫
JP7694816B2 (ja) * 2022-04-14 2025-06-18 株式会社デンソー 半導体装置とその製造方法
JP7757235B2 (ja) * 2022-05-13 2025-10-21 株式会社デンソー 半導体装置とその製造方法
CN114678277B (zh) * 2022-05-27 2022-08-16 深圳平创半导体有限公司 中心注入p+屏蔽区的分裂栅平面mosfet及其制造方法
CN115458584B (zh) * 2022-09-15 2025-01-28 深圳市森国科科技股份有限公司 SiC MOSFET器件结构
JP7841410B2 (ja) * 2022-11-18 2026-04-07 株式会社デンソー 炭化珪素半導体装置
JP7798759B2 (ja) * 2022-12-14 2026-01-14 株式会社デンソー 半導体装置の製造方法
CN116314338B (zh) * 2023-05-18 2023-08-01 深圳平创半导体有限公司 一种半导体结构及其制备方法
DE102023205312A1 (de) 2023-06-07 2024-12-12 Robert Bosch Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit reduzierter spreizung des flächenspezifischen durchgangswiderstands und mit verbesserter kurzschlussfähigkeit
CN118888592A (zh) * 2024-07-18 2024-11-01 长飞先进半导体(武汉)有限公司 功率器件及制备方法、功率模块、功率转换电路和车辆

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