JP7121236B2 - トランジスタ電力スイッチのための電流感知及び制御 - Google Patents

トランジスタ電力スイッチのための電流感知及び制御 Download PDF

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JP7121236B2
JP7121236B2 JP2019523750A JP2019523750A JP7121236B2 JP 7121236 B2 JP7121236 B2 JP 7121236B2 JP 2019523750 A JP2019523750 A JP 2019523750A JP 2019523750 A JP2019523750 A JP 2019523750A JP 7121236 B2 JP7121236 B2 JP 7121236B2
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current
transistor
terminal
fet
coupled
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JP2019533961A5 (https=
JP2019533961A (ja
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チャウハン アンクル
プラサド サドヘール
アビドゥール ラーマン エムディー
ロイ スブラト
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テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Measuring current only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0009—AC switches, i.e. delivering AC power to a load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0054—Gating switches, e.g. pass gates

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Electronic Switches (AREA)
JP2019523750A 2016-11-02 2017-11-02 トランジスタ電力スイッチのための電流感知及び制御 Active JP7121236B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022080311A JP7488438B2 (ja) 2016-11-02 2022-05-16 トランジスタ電力スイッチのための電流感知及び制御

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/341,205 2016-11-02
US15/341,205 US10014851B2 (en) 2016-11-02 2016-11-02 Current sensing and control for a transistor power switch
PCT/US2017/059801 WO2018085596A1 (en) 2016-11-02 2017-11-02 Current sensing and control for a transistor power switch

Related Child Applications (1)

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JP2022080311A Division JP7488438B2 (ja) 2016-11-02 2022-05-16 トランジスタ電力スイッチのための電流感知及び制御

Publications (3)

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JP2019533961A JP2019533961A (ja) 2019-11-21
JP2019533961A5 JP2019533961A5 (https=) 2020-12-17
JP7121236B2 true JP7121236B2 (ja) 2022-08-18

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JP2019523750A Active JP7121236B2 (ja) 2016-11-02 2017-11-02 トランジスタ電力スイッチのための電流感知及び制御
JP2022080311A Active JP7488438B2 (ja) 2016-11-02 2022-05-16 トランジスタ電力スイッチのための電流感知及び制御

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Country Link
US (2) US10014851B2 (https=)
EP (1) EP3535845B1 (https=)
JP (2) JP7121236B2 (https=)
KR (1) KR102380611B1 (https=)
CN (1) CN110226288B (https=)
WO (1) WO2018085596A1 (https=)

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JP7511459B2 (ja) * 2020-12-15 2024-07-05 エイブリック株式会社 過電流保護回路及び負荷駆動装置
US11211928B1 (en) * 2021-02-01 2021-12-28 Infineon Technologies Ag Apparatus and method for power switch status check
US11876490B2 (en) 2021-04-12 2024-01-16 Texas Instruments Incorporated Compensation of thermally induced voltage errors
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Also Published As

Publication number Publication date
KR20190087414A (ko) 2019-07-24
KR102380611B1 (ko) 2022-03-30
US10361695B2 (en) 2019-07-23
CN110226288B (zh) 2026-01-23
JP2019533961A (ja) 2019-11-21
US20180123578A1 (en) 2018-05-03
EP3535845A1 (en) 2019-09-11
CN110226288A (zh) 2019-09-10
JP7488438B2 (ja) 2024-05-22
US10014851B2 (en) 2018-07-03
JP2022107018A (ja) 2022-07-20
WO2018085596A1 (en) 2018-05-11
EP3535845B1 (en) 2024-03-20
EP3535845A4 (en) 2019-11-06
US20180287602A1 (en) 2018-10-04

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