JP7081892B2 - 半導体メモリの製造方法 - Google Patents
半導体メモリの製造方法 Download PDFInfo
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- JP7081892B2 JP7081892B2 JP2021074384A JP2021074384A JP7081892B2 JP 7081892 B2 JP7081892 B2 JP 7081892B2 JP 2021074384 A JP2021074384 A JP 2021074384A JP 2021074384 A JP2021074384 A JP 2021074384A JP 7081892 B2 JP7081892 B2 JP 7081892B2
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- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 141
- 238000000034 method Methods 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 204
- 239000003990 capacitor Substances 0.000 description 83
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 54
- 229920005591 polysilicon Polymers 0.000 description 54
- 239000002344 surface layer Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000007334 memory performance Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
11 シリコン基板
20 第1のキャパシタ
21 nウェル
22a、22b n型拡散層
23a、23b、25 コンタクト
24 p型拡散層
26 第1の絶縁膜
27 第1の導電層
30 第2のキャパシタ
31 nウェル
32a、32b n型拡散層
33a、35 コンタクト
34 p型拡散層
36 第2の絶縁膜
37 第2の導電層
40 トランジスタ
42a ソース
43a、43b コンタクト
42b ドレイン
46 ゲート絶縁膜
47 ゲート電極
50 ポリシリコン膜
60 シリコン酸化膜
100A、100B メモリセルアレイ
Claims (4)
- 基板に、第1の導電型を有する第1の不純物を注入して第1の拡散層を設ける工程と、
前記第1の拡散層に、第2の導電型を有する第2の不純物を注入して互いに離間した複数の第2の拡散層を設ける工程と、
前記第1の拡散層及び前記複数の第2の拡散層上に、第1の絶縁膜を設ける工程と、
前記第1の絶縁膜上に、第1の導電層を設ける工程と、
前記第1の導電層に、前記第2の導電型を有する第3の不純物を注入する工程と、
前記第1の導電層を選択的に除去する工程と、
前記第1の導電層の除去によって露出した前記第1の絶縁膜の下に位置する前記複数の第2の拡散層に、前記第1の導電型を有する第4の不純物及び前記第2の導電型を有する第5の不純物をそれぞれ注入して、互いに離間した複数の第3の拡散層及び互いに離間した複数の第4の拡散層を設ける工程と、
を含む半導体メモリの製造方法。 - 前記複数の第3の拡散層及び前記複数の第4の拡散層を設ける工程は、前記第1の導電層に、前記第2の導電型の不純物濃度が相互に異なる複数の領域を形成する工程を含む請求項1に記載の半導体メモリの製造方法。
- 前記複数の第3の拡散層の少なくとも1つ上、及び、前記複数の第4の拡散層の少なくとも1つ上に導電体を設ける工程を含む請求項1または2に記載の半導体メモリの製造方法。
- 前記第1の導電層の除去によって露出した前記第1の絶縁膜の下に位置し、前記第2の拡散層間に位置する前記第1の拡散層に、前記第2の導電型を有する第6の不純物を注入して互いに離間した複数の第5の拡散層を設ける工程を含む請求項1から3のいずれか1項に記載の半導体メモリの製造方法。
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JP2001185633A (ja) | 1999-12-15 | 2001-07-06 | Texas Instr Inc <Ti> | Eepromデバイス |
JP2005175411A (ja) | 2003-12-12 | 2005-06-30 | Genusion:Kk | 半導体装置、及びその製造方法 |
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JP2021106298A (ja) | 2021-07-26 |
JP6876397B2 (ja) | 2021-05-26 |
US20180083023A1 (en) | 2018-03-22 |
CN107863344A (zh) | 2018-03-30 |
JP2018049937A (ja) | 2018-03-29 |
US10157931B2 (en) | 2018-12-18 |
US10446568B2 (en) | 2019-10-15 |
CN107863344B (zh) | 2023-08-29 |
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