JP2021089929A - 半導体装置 - Google Patents
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- JP2021089929A JP2021089929A JP2019218635A JP2019218635A JP2021089929A JP 2021089929 A JP2021089929 A JP 2021089929A JP 2019218635 A JP2019218635 A JP 2019218635A JP 2019218635 A JP2019218635 A JP 2019218635A JP 2021089929 A JP2021089929 A JP 2021089929A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 59
- 229920005591 polysilicon Polymers 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 52
- 238000009792 diffusion process Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 83
- 239000010410 layer Substances 0.000 description 48
- 239000003990 capacitor Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
10 半導体基板
11 第1ウェル
12 第2ウェル
13 第3ウェル
14 素子分離領域
15 拡散層
16 拡散層
17 半導体層
18 シリコン基板
20 ゲートポリシリコン
21 ゲート酸化膜
23 選択トランジスタ
30 トレンチ
31 トレンチ内絶縁膜
32 トレンチ内導電部
40 レジスト膜
200 半導体装置
21A 第1の領域
21B 第2の領域
300,400 半導体装置
50 半導体基板
Claims (7)
- 不揮発性メモリを構成する半導体装置であって、
第1導電型の半導体部と、
前記半導体部の1の面内の第1の領域から内部に向かって延在するように形成された前記第1導電型とは逆極性の第2導電型の第1ウェルと、
前記第1の領域から離間して前記半導体部の前記1の面内の第2の領域から内部に向かって延在するように形成された前記第2導電型の第2ウェルと、
前記1の面上に形成された絶縁膜と、
前記絶縁膜上の前記第1ウェルの上方の領域及び前記第2ウェルの上方の領域に跨って延在するように形成された導電層と、
を有し、
前記第1ウェルには、前記1の面から前記第1ウェル内に伸長するトレンチが形成され、前記トレンチの内部の表面には前記絶縁膜が延在しており、前記トレンチの内部の前記絶縁膜上には前記トレンチを埋めるように前記導電層と連続的に形成された導電部が設けられていることを特徴とする半導体装置。 - 前記半導体部は、前記第1ウェルと前記第2ウェルとの間の領域において、前記半導体部の前記1の面から内部に向かって延在する前記第1導電型の第3ウェルを構成することを特徴とする請求項1に記載の半導体装置。
- 前記第1ウェルには、前記1の面から前記第1ウェルの内部に向かって延在する前記第2導電型の第1拡散層が形成され、
前記第2ウェルには、前記1の面から前記第2ウェルの内部に向かって延在する前記第2導電型の第2拡散層が形成されていることを特徴とする請求項1又は2に記載の半導体装置。 - 前記導電層及び前記導電部は、前記第2導電型のポリシリコン層から構成され、
前記絶縁膜は、シリコン酸化膜から構成されていることを特徴とする請求項1乃至3のいずれか1に記載の半導体装置。 - 前記半導体部は、半導体基板と、前記半導体基板の1の面から内部に向かって延在する前記第1導電型の半導体層を有することを特徴とする請求項1乃至4のいずれか1に記載の半導体装置。
- 前記半導体部は、前記第1導電型の半導体基板であることを特徴とする請求項1乃至4のいずれか1に記載の半導体装置。
- 不揮発性メモリを構成する半導体装置であって、
第1導電型の半導体部と、
前記半導体部の1の面内の第1の領域から内部に向かって延在するように形成された前記第1導電型とは逆極性の第2導電型の第1ウェルと、
前記第1の領域から離間して前記半導体部の前記1の面内の第2の領域から内部に向かって延在するように形成された前記第2導電型の第2ウェルと、
前記1の面上に形成された絶縁膜と、
前記絶縁膜上の前記第1ウェルの上方の領域及び前記第2ウェルの上方の領域に跨って延在するように形成された導電層と、
を有し、
前記絶縁膜は、前記第1ウェルの上方に位置するように延在して第1の膜厚を有する第1領域、及び前記第1の膜厚よりも厚い第2の膜厚を有する第2領域を有することを特徴とする半導体装置。
Priority Applications (3)
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JP2019218635A JP2021089929A (ja) | 2019-12-03 | 2019-12-03 | 半導体装置 |
CN202011350762.6A CN112909003A (zh) | 2019-12-03 | 2020-11-26 | 半导体装置 |
US17/106,585 US11476368B2 (en) | 2019-12-03 | 2020-11-30 | Semiconductor device |
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JP2019218635A JP2021089929A (ja) | 2019-12-03 | 2019-12-03 | 半導体装置 |
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JP (1) | JP2021089929A (ja) |
CN (1) | CN112909003A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129760A (ja) * | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH09135008A (ja) * | 1995-11-08 | 1997-05-20 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2011187870A (ja) * | 2010-03-11 | 2011-09-22 | Panasonic Corp | 不揮発性半導体記憶装置 |
JP2018049937A (ja) * | 2016-09-21 | 2018-03-29 | ラピスセミコンダクタ株式会社 | 半導体メモリおよび半導体メモリの製造方法 |
Family Cites Families (3)
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KR100812080B1 (ko) * | 2007-06-26 | 2008-03-07 | 주식회사 동부하이텍 | 비휘발성 메모리 소자 및 그 제조 방법 |
US8772854B2 (en) * | 2012-04-02 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-time programming memory cells and methods for forming the same |
FR3070534A1 (fr) * | 2017-08-28 | 2019-03-01 | Stmicroelectronics (Rousset) Sas | Procede de fabrication d'elements capacitifs dans des tranchees |
-
2019
- 2019-12-03 JP JP2019218635A patent/JP2021089929A/ja active Pending
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2020
- 2020-11-26 CN CN202011350762.6A patent/CN112909003A/zh active Pending
- 2020-11-30 US US17/106,585 patent/US11476368B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09129760A (ja) * | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JPH09135008A (ja) * | 1995-11-08 | 1997-05-20 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2011187870A (ja) * | 2010-03-11 | 2011-09-22 | Panasonic Corp | 不揮発性半導体記憶装置 |
JP2018049937A (ja) * | 2016-09-21 | 2018-03-29 | ラピスセミコンダクタ株式会社 | 半導体メモリおよび半導体メモリの製造方法 |
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US20210167213A1 (en) | 2021-06-03 |
CN112909003A (zh) | 2021-06-04 |
US11476368B2 (en) | 2022-10-18 |
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