JP2014143377A - 半導体不揮発性メモリ - Google Patents
半導体不揮発性メモリ Download PDFInfo
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- JP2014143377A JP2014143377A JP2013012385A JP2013012385A JP2014143377A JP 2014143377 A JP2014143377 A JP 2014143377A JP 2013012385 A JP2013012385 A JP 2013012385A JP 2013012385 A JP2013012385 A JP 2013012385A JP 2014143377 A JP2014143377 A JP 2014143377A
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- drain region
- tunnel
- trench
- insulating film
- nonvolatile memory
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Abstract
【解決手段】半導体基板10の表面に、ソース領域側トンネルドレイン領域12とドレイン領域側トンネルドレイン領域11との間で、ドレイン領域側トンネルドレイン領域11と重なるよう設けられるトレンチ15と、トレンチ15の側面及び底面に設けられるセカンドトンネルドレイン領域16と、トレンチ15の上に位置して前記トレンチのエッチング用マスクおよびセカンドトンネルドレイン領域16のイオン注入用マスクとして機能する開口部14を有し、半導体基板10の上に設けられるフローティングゲート絶縁膜13と、トレンチ15の側面及び底面に、設けられるトンネル絶縁膜17と、を備える。
【選択図】図3
Description
11 ドレイン領域側トンネルドレイン領域
12 ソース領域側トンネルドレイン領域
13 フローティングゲート絶縁膜
14 開口部
15 トレンチ
16 セカンドトンネルドレイン領域
17 トンネル絶縁膜
18 フローティングゲート
19 コントロールゲート絶縁膜
20 コントロールゲート
21 ドレイン領域
22 ソース領域
Claims (4)
- 半導体基板と、
前記半導体基板の表面に、間隔をおいて設けられたソース領域及びドレイン領域側トンネルドレイン領域と、
前記ソース領域と前記ドレイン領域側トンネルドレイン領域との間で、前記半導体基板の表面から内部に向けて、前記ドレイン領域側トンネルドレイン領域と重なるよう設けられたトレンチと、
前記トレンチの側面及び底面に設けられたセカンドトンネルドレイン領域と、
前記トレンチの上に位置して前記トレンチのエッチング用マスクおよび前記セカンドトンネルドレイン領域のイオン注入用マスクとして機能する開口部を有する、前記半導体基板の上に設けられたフローティングゲート絶縁膜と、
前記トレンチの側面及び底面に設けられたトンネル絶縁膜と、
前記フローティングゲート絶縁膜及び前記トンネル絶縁膜の上に設けられたフローティングゲートと、
前記フローティングゲートの上に設けられたコントロールゲート絶縁膜と、
前記コントロールゲート絶縁膜の上に設けられたコントロールゲートと、
を備えることを特徴とする半導体不揮発性メモリ。 - 前記トレンチは、底面と側面との結晶方位が等しくなるよう配置されていることを特徴とする請求項1記載の半導体不揮発性メモリ。
- 前記開口部の一部が、平面上、前記ドレイン領域側トンネルドレイン領域と重なっていることを特徴とする請求項1または2記載の半導体不揮発性メモリ。
- 前記開口部の全部が、平面上、前記ドレイン領域側トンネルドレイン領域と重なっていることを特徴とする請求項1または2記載の半導体不揮発性メモリ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013012385A JP2014143377A (ja) | 2013-01-25 | 2013-01-25 | 半導体不揮発性メモリ |
PCT/JP2014/050191 WO2014115581A1 (ja) | 2013-01-25 | 2014-01-09 | 半導体不揮発性メモリ |
TW103101601A TW201448173A (zh) | 2013-01-25 | 2014-01-16 | 半導體非揮發性記憶體 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013012385A JP2014143377A (ja) | 2013-01-25 | 2013-01-25 | 半導体不揮発性メモリ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014143377A true JP2014143377A (ja) | 2014-08-07 |
Family
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Family Applications (1)
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JP2013012385A Pending JP2014143377A (ja) | 2013-01-25 | 2013-01-25 | 半導体不揮発性メモリ |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014143377A (ja) |
TW (1) | TW201448173A (ja) |
WO (1) | WO2014115581A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021089929A (ja) * | 2019-12-03 | 2021-06-10 | ラピスセミコンダクタ株式会社 | 半導体装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10256310B1 (en) | 2017-12-04 | 2019-04-09 | Vanguard International Semiconductor Corporation | Split-gate flash memory cell having a floating gate situated in a concave trench in a semiconductor substrate |
TWI662690B (zh) * | 2018-01-16 | 2019-06-11 | 世界先進積體電路股份有限公司 | 分離式閘極快閃記憶體元件及其形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6358876A (ja) * | 1986-08-29 | 1988-03-14 | Oki Electric Ind Co Ltd | 不揮発性半導体装置 |
JPH04271177A (ja) * | 1991-01-23 | 1992-09-28 | Matsushita Electron Corp | 不揮発性半導体記憶装置の製造方法 |
JPH09129760A (ja) * | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2000077632A (ja) * | 1998-09-01 | 2000-03-14 | Nec Corp | フラッシュメモリ、その書き込み・消去方法、およびその製造方法 |
JP2005129942A (ja) * | 2003-10-22 | 2005-05-19 | Hynix Semiconductor Inc | 不揮発性メモリ素子の製造方法 |
JP2011134981A (ja) * | 2009-12-25 | 2011-07-07 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0204498A3 (en) * | 1985-05-29 | 1988-09-21 | Advanced Micro Devices, Inc. | Improved eeprom cell and method of fabrication |
JP2764507B2 (ja) * | 1992-10-08 | 1998-06-11 | 日本無線株式会社 | 電力用電界効果型トランジスタ |
-
2013
- 2013-01-25 JP JP2013012385A patent/JP2014143377A/ja active Pending
-
2014
- 2014-01-09 WO PCT/JP2014/050191 patent/WO2014115581A1/ja active Application Filing
- 2014-01-16 TW TW103101601A patent/TW201448173A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6358876A (ja) * | 1986-08-29 | 1988-03-14 | Oki Electric Ind Co Ltd | 不揮発性半導体装置 |
JPH04271177A (ja) * | 1991-01-23 | 1992-09-28 | Matsushita Electron Corp | 不揮発性半導体記憶装置の製造方法 |
JPH09129760A (ja) * | 1995-11-06 | 1997-05-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP2000077632A (ja) * | 1998-09-01 | 2000-03-14 | Nec Corp | フラッシュメモリ、その書き込み・消去方法、およびその製造方法 |
JP2005129942A (ja) * | 2003-10-22 | 2005-05-19 | Hynix Semiconductor Inc | 不揮発性メモリ素子の製造方法 |
JP2011134981A (ja) * | 2009-12-25 | 2011-07-07 | Sanyo Electric Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021089929A (ja) * | 2019-12-03 | 2021-06-10 | ラピスセミコンダクタ株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
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TW201448173A (zh) | 2014-12-16 |
WO2014115581A1 (ja) | 2014-07-31 |
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