JP7006517B2 - シリコン単結晶基板中の欠陥密度の制御方法 - Google Patents

シリコン単結晶基板中の欠陥密度の制御方法 Download PDF

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JP7006517B2
JP7006517B2 JP2018112062A JP2018112062A JP7006517B2 JP 7006517 B2 JP7006517 B2 JP 7006517B2 JP 2018112062 A JP2018112062 A JP 2018112062A JP 2018112062 A JP2018112062 A JP 2018112062A JP 7006517 B2 JP7006517 B2 JP 7006517B2
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single crystal
silicon single
crystal substrate
defect density
nitrogen concentration
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JP2019214488A5 (enExample
JP2019214488A (ja
Inventor
博 竹野
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2018112062A priority Critical patent/JP7006517B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to PCT/JP2019/019004 priority patent/WO2019239762A1/ja
Priority to EP19820517.1A priority patent/EP3808879B1/en
Priority to DK19820517.1T priority patent/DK3808879T3/da
Priority to CN201980039589.7A priority patent/CN112334608B/zh
Priority to TW108117522A priority patent/TWI801586B/zh
Publication of JP2019214488A publication Critical patent/JP2019214488A/ja
Publication of JP2019214488A5 publication Critical patent/JP2019214488A5/ja
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    • H10P34/40—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H10P74/203—
    • H10P74/23—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2018112062A 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法 Active JP7006517B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法
EP19820517.1A EP3808879B1 (en) 2018-06-12 2019-05-13 Method for controlling defect density in silicon single crystal substrate
DK19820517.1T DK3808879T3 (da) 2018-06-12 2019-05-13 Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat
CN201980039589.7A CN112334608B (zh) 2018-06-12 2019-05-13 单晶硅基板中的缺陷密度的控制方法
PCT/JP2019/019004 WO2019239762A1 (ja) 2018-06-12 2019-05-13 シリコン単結晶基板中の欠陥密度の制御方法
TW108117522A TWI801586B (zh) 2018-06-12 2019-05-21 單晶矽基板中的缺陷密度的控制方法

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JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法

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JP2019214488A JP2019214488A (ja) 2019-12-19
JP2019214488A5 JP2019214488A5 (enExample) 2020-12-10
JP7006517B2 true JP7006517B2 (ja) 2022-01-24

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EP (1) EP3808879B1 (enExample)
JP (1) JP7006517B2 (enExample)
CN (1) CN112334608B (enExample)
DK (1) DK3808879T3 (enExample)
TW (1) TWI801586B (enExample)
WO (1) WO2019239762A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021186944A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068477A (ja) 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001240490A (ja) 2000-02-25 2001-09-04 Sumitomo Metal Ind Ltd 半導体シリコンウエーハの製造方法
JP2004304095A (ja) 2003-04-01 2004-10-28 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
JP2015023062A (ja) 2013-07-16 2015-02-02 信越半導体株式会社 拡散ウェーハの製造方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2001067477A (ja) * 1999-08-27 2001-03-16 Matsushita Electric Ind Co Ltd 個人識別システム
JP2006054350A (ja) * 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
CN103946985B (zh) 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068477A (ja) 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001240490A (ja) 2000-02-25 2001-09-04 Sumitomo Metal Ind Ltd 半導体シリコンウエーハの製造方法
JP2004304095A (ja) 2003-04-01 2004-10-28 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
JP2015023062A (ja) 2013-07-16 2015-02-02 信越半導体株式会社 拡散ウェーハの製造方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SGOUROU, E. N. et al.，Infrared study of defects in nitrogen-doped electron irradiated silicon，J. Mater. Sci.: Mater. Electron.，スイス，Springer Nature Switzerland AG，2015年11月04日，Vol. 27, No. 2，pp. 2054-2061，DOI: 10.1007/s10854-015-3991-2

Also Published As

Publication number Publication date
EP3808879B1 (en) 2023-03-01
EP3808879A1 (en) 2021-04-21
DK3808879T3 (da) 2023-05-01
CN112334608A (zh) 2021-02-05
WO2019239762A1 (ja) 2019-12-19
EP3808879A4 (en) 2022-03-02
TW202002116A (zh) 2020-01-01
JP2019214488A (ja) 2019-12-19
CN112334608B (zh) 2022-07-26
TWI801586B (zh) 2023-05-11

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