JP7006517B2 - シリコン単結晶基板中の欠陥密度の制御方法 - Google Patents

シリコン単結晶基板中の欠陥密度の制御方法 Download PDF

Info

Publication number
JP7006517B2
JP7006517B2 JP2018112062A JP2018112062A JP7006517B2 JP 7006517 B2 JP7006517 B2 JP 7006517B2 JP 2018112062 A JP2018112062 A JP 2018112062A JP 2018112062 A JP2018112062 A JP 2018112062A JP 7006517 B2 JP7006517 B2 JP 7006517B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
crystal substrate
defect density
nitrogen concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018112062A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019214488A5 (enExample
JP2019214488A (ja
Inventor
博 竹野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2018112062A priority Critical patent/JP7006517B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to DK19820517.1T priority patent/DK3808879T3/da
Priority to CN201980039589.7A priority patent/CN112334608B/zh
Priority to PCT/JP2019/019004 priority patent/WO2019239762A1/ja
Priority to EP19820517.1A priority patent/EP3808879B1/en
Priority to TW108117522A priority patent/TWI801586B/zh
Publication of JP2019214488A publication Critical patent/JP2019214488A/ja
Publication of JP2019214488A5 publication Critical patent/JP2019214488A5/ja
Application granted granted Critical
Publication of JP7006517B2 publication Critical patent/JP7006517B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2018112062A 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法 Active JP7006517B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法
CN201980039589.7A CN112334608B (zh) 2018-06-12 2019-05-13 单晶硅基板中的缺陷密度的控制方法
PCT/JP2019/019004 WO2019239762A1 (ja) 2018-06-12 2019-05-13 シリコン単結晶基板中の欠陥密度の制御方法
EP19820517.1A EP3808879B1 (en) 2018-06-12 2019-05-13 Method for controlling defect density in silicon single crystal substrate
DK19820517.1T DK3808879T3 (da) 2018-06-12 2019-05-13 Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat
TW108117522A TWI801586B (zh) 2018-06-12 2019-05-21 單晶矽基板中的缺陷密度的控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法

Publications (3)

Publication Number Publication Date
JP2019214488A JP2019214488A (ja) 2019-12-19
JP2019214488A5 JP2019214488A5 (enExample) 2020-12-10
JP7006517B2 true JP7006517B2 (ja) 2022-01-24

Family

ID=68842170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018112062A Active JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法

Country Status (6)

Country Link
EP (1) EP3808879B1 (enExample)
JP (1) JP7006517B2 (enExample)
CN (1) CN112334608B (enExample)
DK (1) DK3808879T3 (enExample)
TW (1) TWI801586B (enExample)
WO (1) WO2019239762A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115280472B (zh) * 2020-03-17 2025-07-25 信越半导体株式会社 单晶硅基板中的施主浓度的控制方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068477A (ja) 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001240490A (ja) 2000-02-25 2001-09-04 Sumitomo Metal Ind Ltd 半導体シリコンウエーハの製造方法
JP2004304095A (ja) 2003-04-01 2004-10-28 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
JP2015023062A (ja) 2013-07-16 2015-02-02 信越半導体株式会社 拡散ウェーハの製造方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2001067477A (ja) * 1999-08-27 2001-03-16 Matsushita Electric Ind Co Ltd 個人識別システム
JP2006054350A (ja) * 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
EP2800143B1 (en) 2011-12-28 2020-04-08 Fuji Electric Co., Ltd. Semiconductor device and method for producing semiconductor device
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068477A (ja) 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001240490A (ja) 2000-02-25 2001-09-04 Sumitomo Metal Ind Ltd 半導体シリコンウエーハの製造方法
JP2004304095A (ja) 2003-04-01 2004-10-28 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
JP2015023062A (ja) 2013-07-16 2015-02-02 信越半導体株式会社 拡散ウェーハの製造方法
JP2015156420A (ja) 2014-02-20 2015-08-27 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SGOUROU, E. N. et al.，Infrared study of defects in nitrogen-doped electron irradiated silicon，J. Mater. Sci.: Mater. Electron.，スイス，Springer Nature Switzerland AG，2015年11月04日，Vol. 27, No. 2，pp. 2054-2061，DOI: 10.1007/s10854-015-3991-2

Also Published As

Publication number Publication date
DK3808879T3 (da) 2023-05-01
EP3808879B1 (en) 2023-03-01
TW202002116A (zh) 2020-01-01
EP3808879A4 (en) 2022-03-02
TWI801586B (zh) 2023-05-11
EP3808879A1 (en) 2021-04-21
CN112334608A (zh) 2021-02-05
CN112334608B (zh) 2022-07-26
WO2019239762A1 (ja) 2019-12-19
JP2019214488A (ja) 2019-12-19

Similar Documents

Publication Publication Date Title
Hiyoshi et al. Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation
JP6268039B2 (ja) 検量線の作成方法、不純物濃度の測定方法、及び半導体ウェハの製造方法
JP6075307B2 (ja) シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
KR101536512B1 (ko) 포화 전압 추정 방법 및 실리콘 에피택셜 웨이퍼의 제조 방법
KR102029647B1 (ko) 실리콘 단결정 기판의 결함 농도 평가 방법
JP6083412B2 (ja) 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6048381B2 (ja) シリコン単結晶中の炭素濃度評価方法、及び、半導体デバイスの製造方法
JP6292131B2 (ja) シリコン基板の選別方法
CN108414499A (zh) 校准曲线的制作方法、碳浓度测定方法及硅晶片的制造方法
JP7006517B2 (ja) シリコン単結晶基板中の欠陥密度の制御方法
JP6881292B2 (ja) 再結合ライフタイムの制御方法
Nakamura et al. Size and dopant-concentration dependence of photoluminescence properties of ion-implanted phosphorus-and boron-codoped Si nanocrystals
CN111033709B (zh) 复合寿命的控制方法
JP2021163929A (ja) シリコン単結晶基板中のドナー濃度の制御方法
JP7334849B2 (ja) シリコン単結晶基板中のドナー濃度の制御方法
JP7103314B2 (ja) シリコン単結晶基板中の炭素濃度評価方法
JP6922688B2 (ja) シリコン単結晶基板の選別方法及びシリコン単結晶基板
Inoue et al. Infrared defect dynamics–radiation induced complexes in silicon crystals grown by various techniques
JP6766786B2 (ja) シリコン単結晶基板中の炭素濃度評価方法、及び半導体デバイスの製造方法
JP7259791B2 (ja) シリコンウェーハへのクラスターイオン注入による白傷欠陥低減効果の評価方法及びエピタキシャルシリコンウェーハの製造方法
Snyman et al. Photoluminescence of proton‐bombarded and annealed GaAs

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180614

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190513

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201028

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210608

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211220

R150 Certificate of patent or registration of utility model

Ref document number: 7006517

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250