DK3808879T3 - Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat - Google Patents

Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat Download PDF

Info

Publication number
DK3808879T3
DK3808879T3 DK19820517.1T DK19820517T DK3808879T3 DK 3808879 T3 DK3808879 T3 DK 3808879T3 DK 19820517 T DK19820517 T DK 19820517T DK 3808879 T3 DK3808879 T3 DK 3808879T3
Authority
DK
Denmark
Prior art keywords
silicon substrate
monocrystalline silicon
defect density
controlling defect
controlling
Prior art date
Application number
DK19820517.1T
Other languages
Danish (da)
English (en)
Inventor
Hiroshi Takeno
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Application granted granted Critical
Publication of DK3808879T3 publication Critical patent/DK3808879T3/da

Links

Classifications

    • H10P34/40—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H10P74/203—
    • H10P74/23—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DK19820517.1T 2018-06-12 2019-05-13 Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat DK3808879T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法
PCT/JP2019/019004 WO2019239762A1 (ja) 2018-06-12 2019-05-13 シリコン単結晶基板中の欠陥密度の制御方法

Publications (1)

Publication Number Publication Date
DK3808879T3 true DK3808879T3 (da) 2023-05-01

Family

ID=68842170

Family Applications (1)

Application Number Title Priority Date Filing Date
DK19820517.1T DK3808879T3 (da) 2018-06-12 2019-05-13 Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat

Country Status (6)

Country Link
EP (1) EP3808879B1 (enExample)
JP (1) JP7006517B2 (enExample)
CN (1) CN112334608B (enExample)
DK (1) DK3808879T3 (enExample)
TW (1) TWI801586B (enExample)
WO (1) WO2019239762A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021186944A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2001068477A (ja) * 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001067477A (ja) * 1999-08-27 2001-03-16 Matsushita Electric Ind Co Ltd 個人識別システム
JP3726622B2 (ja) * 2000-02-25 2005-12-14 株式会社Ｓｕｍｃｏ 半導体シリコンウエーハの製造方法
JP4670224B2 (ja) * 2003-04-01 2011-04-13 株式会社Sumco シリコンウェーハの製造方法
JP2006054350A (ja) * 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
CN103946985B (zh) 2011-12-28 2017-06-23 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6047456B2 (ja) * 2013-07-16 2016-12-21 信越半導体株式会社 拡散ウェーハの製造方法
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
JP6075307B2 (ja) * 2014-02-20 2017-02-08 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ

Also Published As

Publication number Publication date
EP3808879B1 (en) 2023-03-01
EP3808879A1 (en) 2021-04-21
CN112334608A (zh) 2021-02-05
WO2019239762A1 (ja) 2019-12-19
EP3808879A4 (en) 2022-03-02
TW202002116A (zh) 2020-01-01
JP7006517B2 (ja) 2022-01-24
JP2019214488A (ja) 2019-12-19
CN112334608B (zh) 2022-07-26
TWI801586B (zh) 2023-05-11

Similar Documents

Publication Publication Date Title
EP3475975A4 (en) POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD FOR PRODUCING THE SAME
DK3234187T3 (da) Fremgangsmåde til enkeltmolekyleanbringelse på et substrat
DE102015119413A8 (de) Verfahren zum Bearbeiten eines Halbleitersubstrats und Verfahren zum Bearbeiten eines Halbleiterwafers
EP3198220C0 (fr) Dispositif et procede de profilometrie de surface pour le controle de wafers en cours de process
DK3887063T3 (da) Apparat og fremgangsmåde til belægning af substrater med washcoat-lag
EP3886161A4 (en) SEMICONDUCTOR PACKAGE SUBSTRATE AND METHOD FOR PRODUCTION THEREOF
DK3410858T3 (da) System til opbevaring og dosering af ingredienser og fremgangsmåde for dosering og afsætning af ingredienser på et substrat
EP3376525A4 (en) METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
DK4206308T3 (da) Fremgangsmåde til behandling af lipidmaterialer
EP3522208A4 (en) Substrate placement stage, and substrate placement stage fabrication method
EP3361841A4 (en) METHOD FOR PRODUCING A MULTILAYER CERAMIC SUBSTRATE
EP3557957A4 (en) WIRING SUBSTRATE, MULTILAYERED WIRING SUBSTRATE AND METHOD FOR PRODUCING THE WIRING SUBSTRATE
DK3454572T3 (da) Fremgangsmåde til detektering af en defekt i et høreinstrument
EP3418424A4 (en) COMPOSITE SUBSTRATE, PELLETIC LAYER AND METHOD FOR PRODUCING A COMPOSITE SUBSTRATE SUBSTRATE
DK3093891T3 (da) Halvledersubstrat, halvlederindretning og fremgangsmåde til fremstilling af halvledersubstrat
EP3366817A4 (en) BASIC SUBSTRATE, METHOD OF PREPARING THE BASE SUBSTRATE AND METHOD FOR PRODUCING A GROUP-13 NITRIDE CRYSTAL
FR3051968B1 (fr) Procede de fabrication d'un substrat semi-conducteur a haute resistivite
DK3808879T3 (da) Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat
EP3511976A4 (en) METHOD FOR ASSESSING BONDING SUBSTRATE SURFACE DEFECTS
DK3491903T3 (da) Fremgangsmåde til aflejring af en beskyttelsescoating og et substrat med en beskyttelsescoating
DK3869946T3 (da) Anordning og fremgangsmåde til styring af et flyvehul i en bikube
DE112017000938T8 (de) Verfahren zum Reinigen eines Halbleiterwafers
EP3493242A4 (en) SUBSTRATE CONNECTION METHOD
DK3400108T3 (da) Fremgangsmåde og apparat til belægning af en endeflade af et monolitsubstrat
EP3537188A4 (en) SUBSTRATE FOR COLOR WHEEL, COLOR WHEEL, PROJECTOR AND METHOD FOR PRODUCING A SUBSTRATE FOR A COLOR WHEEL