JP2019214488A5 - - Google Patents

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Publication number
JP2019214488A5
JP2019214488A5 JP2018112062A JP2018112062A JP2019214488A5 JP 2019214488 A5 JP2019214488 A5 JP 2019214488A5 JP 2018112062 A JP2018112062 A JP 2018112062A JP 2018112062 A JP2018112062 A JP 2018112062A JP 2019214488 A5 JP2019214488 A5 JP 2019214488A5
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JP
Japan
Prior art keywords
intensity
measured
results
heat treatment
single crystal
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JP2018112062A
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English (en)
Japanese (ja)
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JP7006517B2 (ja
JP2019214488A (ja
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Application filed filed Critical
Priority claimed from JP2018112062A external-priority patent/JP7006517B2/ja
Priority to JP2018112062A priority Critical patent/JP7006517B2/ja
Priority to DK19820517.1T priority patent/DK3808879T3/da
Priority to PCT/JP2019/019004 priority patent/WO2019239762A1/ja
Priority to EP19820517.1A priority patent/EP3808879B1/en
Priority to CN201980039589.7A priority patent/CN112334608B/zh
Priority to TW108117522A priority patent/TWI801586B/zh
Publication of JP2019214488A publication Critical patent/JP2019214488A/ja
Publication of JP2019214488A5 publication Critical patent/JP2019214488A5/ja
Publication of JP7006517B2 publication Critical patent/JP7006517B2/ja
Application granted granted Critical
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JP2018112062A 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法 Active JP7006517B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法
CN201980039589.7A CN112334608B (zh) 2018-06-12 2019-05-13 单晶硅基板中的缺陷密度的控制方法
PCT/JP2019/019004 WO2019239762A1 (ja) 2018-06-12 2019-05-13 シリコン単結晶基板中の欠陥密度の制御方法
EP19820517.1A EP3808879B1 (en) 2018-06-12 2019-05-13 Method for controlling defect density in silicon single crystal substrate
DK19820517.1T DK3808879T3 (da) 2018-06-12 2019-05-13 Fremgangsmåde til kontrol af defektdensitet i et monokrystallinsk siliciumsubstrat
TW108117522A TWI801586B (zh) 2018-06-12 2019-05-21 單晶矽基板中的缺陷密度的控制方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018112062A JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法

Publications (3)

Publication Number Publication Date
JP2019214488A JP2019214488A (ja) 2019-12-19
JP2019214488A5 true JP2019214488A5 (enExample) 2020-12-10
JP7006517B2 JP7006517B2 (ja) 2022-01-24

Family

ID=68842170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018112062A Active JP7006517B2 (ja) 2018-06-12 2018-06-12 シリコン単結晶基板中の欠陥密度の制御方法

Country Status (6)

Country Link
EP (1) EP3808879B1 (enExample)
JP (1) JP7006517B2 (enExample)
CN (1) CN112334608B (enExample)
DK (1) DK3808879T3 (enExample)
TW (1) TWI801586B (enExample)
WO (1) WO2019239762A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115280472B (zh) * 2020-03-17 2025-07-25 信越半导体株式会社 单晶硅基板中的施主浓度的控制方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211874B2 (ja) 1997-10-29 2001-09-25 サンケン電気株式会社 半導体装置の製造方法
JP4288797B2 (ja) 1998-11-05 2009-07-01 株式会社デンソー 半導体装置の製造方法
JP2001068477A (ja) 1999-08-27 2001-03-16 Komatsu Electronic Metals Co Ltd エピタキシャルシリコンウエハ
JP2001067477A (ja) * 1999-08-27 2001-03-16 Matsushita Electric Ind Co Ltd 個人識別システム
JP3726622B2 (ja) 2000-02-25 2005-12-14 株式会社Ｓｕｍｃｏ 半導体シリコンウエーハの製造方法
JP4670224B2 (ja) 2003-04-01 2011-04-13 株式会社Sumco シリコンウェーハの製造方法
JP2006054350A (ja) * 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
JP5104314B2 (ja) 2005-11-14 2012-12-19 富士電機株式会社 半導体装置およびその製造方法
EP2800143B1 (en) 2011-12-28 2020-04-08 Fuji Electric Co., Ltd. Semiconductor device and method for producing semiconductor device
JP6047456B2 (ja) 2013-07-16 2016-12-21 信越半導体株式会社 拡散ウェーハの製造方法
JP6036670B2 (ja) * 2013-12-10 2016-11-30 信越半導体株式会社 シリコン単結晶基板の欠陥濃度評価方法
JP6075307B2 (ja) 2014-02-20 2017-02-08 信越半導体株式会社 シリコン単結晶中の炭素濃度評価方法及び半導体デバイスの製造方法
JP6083412B2 (ja) * 2014-04-01 2017-02-22 信越半導体株式会社 再結合ライフタイムの制御方法及びシリコン基板の製造方法
JP6447351B2 (ja) * 2015-05-08 2019-01-09 株式会社Sumco シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ

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