JP6977588B2 - 半導体装置の製造方法及び接着フィルム - Google Patents

半導体装置の製造方法及び接着フィルム Download PDF

Info

Publication number
JP6977588B2
JP6977588B2 JP2018013752A JP2018013752A JP6977588B2 JP 6977588 B2 JP6977588 B2 JP 6977588B2 JP 2018013752 A JP2018013752 A JP 2018013752A JP 2018013752 A JP2018013752 A JP 2018013752A JP 6977588 B2 JP6977588 B2 JP 6977588B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
adhesive film
semiconductor chip
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018013752A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019134020A (ja
Inventor
由衣 國土
和弘 山本
紘平 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP2018013752A priority Critical patent/JP6977588B2/ja
Priority to CN201980010201.0A priority patent/CN111656500B/zh
Priority to PCT/JP2019/003010 priority patent/WO2019151260A1/ja
Priority to KR1020207021839A priority patent/KR102602489B1/ko
Priority to SG11202007053XA priority patent/SG11202007053XA/en
Priority to TW108103596A priority patent/TWI791751B/zh
Publication of JP2019134020A publication Critical patent/JP2019134020A/ja
Application granted granted Critical
Publication of JP6977588B2 publication Critical patent/JP6977588B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
JP2018013752A 2018-01-30 2018-01-30 半導体装置の製造方法及び接着フィルム Active JP6977588B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018013752A JP6977588B2 (ja) 2018-01-30 2018-01-30 半導体装置の製造方法及び接着フィルム
CN201980010201.0A CN111656500B (zh) 2018-01-30 2019-01-29 半导体装置的制造方法及粘接膜
PCT/JP2019/003010 WO2019151260A1 (ja) 2018-01-30 2019-01-29 半導体装置の製造方法及び接着フィルム
KR1020207021839A KR102602489B1 (ko) 2018-01-30 2019-01-29 반도체 장치의 제조 방법 및 접착 필름
SG11202007053XA SG11202007053XA (en) 2018-01-30 2019-01-29 Manufacturing method for semiconductor device, and adhesive film
TW108103596A TWI791751B (zh) 2018-01-30 2019-01-30 半導體裝置的製造方法及接著膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018013752A JP6977588B2 (ja) 2018-01-30 2018-01-30 半導体装置の製造方法及び接着フィルム

Publications (2)

Publication Number Publication Date
JP2019134020A JP2019134020A (ja) 2019-08-08
JP6977588B2 true JP6977588B2 (ja) 2021-12-08

Family

ID=67479794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018013752A Active JP6977588B2 (ja) 2018-01-30 2018-01-30 半導体装置の製造方法及び接着フィルム

Country Status (6)

Country Link
JP (1) JP6977588B2 (zh)
KR (1) KR102602489B1 (zh)
CN (1) CN111656500B (zh)
SG (1) SG11202007053XA (zh)
TW (1) TWI791751B (zh)
WO (1) WO2019151260A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7298404B2 (ja) * 2019-09-06 2023-06-27 株式会社レゾナック 半導体装置の製造方法
JP7427480B2 (ja) 2020-03-09 2024-02-05 キオクシア株式会社 半導体装置
JP2022036756A (ja) 2020-08-24 2022-03-08 キオクシア株式会社 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209948C (zh) * 2002-07-17 2005-07-06 威盛电子股份有限公司 嵌埋有ic芯片与无源元件的整合式模块板及其制作方法
JP2004217757A (ja) * 2003-01-14 2004-08-05 Hitachi Chem Co Ltd 緩衝性カバーフィルムを備えた接着シートならびに半導体装置およびその製造方法
US7375370B2 (en) 2004-08-05 2008-05-20 The Trustees Of Princeton University Stacked organic photosensitive devices
JP5003090B2 (ja) * 2006-10-06 2012-08-15 住友ベークライト株式会社 接着フィルムおよびこれを用いた半導体装置
US20100112272A1 (en) * 2006-10-06 2010-05-06 Sumitomo Bakelite Co., Ltd. Film for use in manufacturing semiconductor devices, method for producing the film and semiconductor device
JP5476673B2 (ja) * 2007-04-02 2014-04-23 日立化成株式会社 接着シート
CN101647096B (zh) * 2007-04-05 2012-01-04 日立化成工业株式会社 半导体芯片的制造方法和半导体用粘接膜及其复合片
KR20100065185A (ko) * 2007-10-09 2010-06-15 히다치 가세고교 가부시끼가이샤 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
JP4994429B2 (ja) * 2008-08-04 2012-08-08 日東電工株式会社 ダイシング・ダイボンドフィルム
JP2010254763A (ja) * 2009-04-22 2010-11-11 Hitachi Chem Co Ltd 接着剤組成物、その製造方法、これを用いた接着シート、一体型シート、その製造方法、半導体装置及びその製造方法
JP2012089630A (ja) * 2010-10-18 2012-05-10 Sumitomo Bakelite Co Ltd 半導体用フィルムおよび半導体装置
JP5736899B2 (ja) * 2011-03-28 2015-06-17 日立化成株式会社 フィルム状接着剤、接着シート及び半導体装置
JP5834662B2 (ja) * 2011-09-13 2015-12-24 日立化成株式会社 フィルム状接着剤、接着シート、半導体装置及びその製造方法
KR102067945B1 (ko) * 2012-03-08 2020-01-17 히타치가세이가부시끼가이샤 접착시트 및 반도체 장치의 제조 방법
JP5924145B2 (ja) * 2012-06-12 2016-05-25 日立化成株式会社 フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP6322026B2 (ja) * 2014-03-31 2018-05-09 日東電工株式会社 ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法
JP6670177B2 (ja) * 2016-05-30 2020-03-18 日東電工株式会社 ダイボンドフィルム、ダイシングダイボンドフィルム、及び、半導体装置の製造方法
JP6222395B1 (ja) * 2017-08-07 2017-11-01 日立化成株式会社 フィルム状接着剤及びダイシングダイボンディング一体型接着シート

Also Published As

Publication number Publication date
TW201941314A (zh) 2019-10-16
KR20200111703A (ko) 2020-09-29
CN111656500A (zh) 2020-09-11
KR102602489B1 (ko) 2023-11-16
JP2019134020A (ja) 2019-08-08
TWI791751B (zh) 2023-02-11
SG11202007053XA (en) 2020-08-28
WO2019151260A1 (ja) 2019-08-08
CN111656500B (zh) 2023-08-15

Similar Documents

Publication Publication Date Title
JP6133542B2 (ja) フィルム状接着剤、接着シート及び半導体装置
JP7298613B2 (ja) 半導体装置の製造方法、熱硬化性樹脂組成物及びダイシング・ダイボンディング一体型フィルム
JP6977588B2 (ja) 半導体装置の製造方法及び接着フィルム
WO2020184490A1 (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP2023017948A (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
TWI774916B (zh) 半導體裝置的製造方法、膜狀接著劑及接著片
JP7136200B2 (ja) 半導体装置、並びに、その製造に使用する熱硬化性樹脂組成物及びダイシングダイボンディング一体型テープ
JP7028264B2 (ja) フィルム状接着剤及びその製造方法、並びに半導体装置及びその製造方法
JP7251167B2 (ja) フィルム状接着剤、接着シート、並びに半導体装置及びその製造方法
TW202105489A (zh) 半導體裝置的製造方法、黏晶膜及切晶-黏晶一體型接著片
WO2020136904A1 (ja) 接着フィルム、ダイシング・ダイボンディング一体型フィルム及び半導体パッケージの製造方法
JP7513015B2 (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
WO2022163465A1 (ja) 半導体装置及びその製造方法、並びに、熱硬化性樹脂組成物、接着フィルム及びダイシング・ダイボンディング一体型フィルム
WO2023152837A1 (ja) フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法
WO2022149582A1 (ja) フィルム状接着剤、ダイシング・ダイボンディング一体型フィルム、並びに半導体装置及びその製造方法
JP2024091963A (ja) 接着剤組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
WO2019150995A1 (ja) 熱硬化性樹脂組成物、フィルム状接着剤、接着シート、及び半導体装置の製造方法
JP6213618B2 (ja) フィルム状接着剤、接着シート及び半導体装置
JP2022044991A (ja) ダイボンディングフィルム、接着シート、並びに半導体装置及びその製造方法
JP2023142901A (ja) 半導体用接着フィルム、ダイシング・ダイボンディング一体型フィルム、及び半導体装置の製造方法
TW202414550A (zh) 半導體裝置的製造方法、接著層及切晶黏晶一體型膜
TW202237786A (zh) 接著劑組成物、膜狀接著劑、切割晶粒接合一體型膜、以及半導體裝置及其製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210104

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211012

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211025

R151 Written notification of patent or utility model registration

Ref document number: 6977588

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350