CN101647096B - 半导体芯片的制造方法和半导体用粘接膜及其复合片 - Google Patents

半导体芯片的制造方法和半导体用粘接膜及其复合片 Download PDF

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CN101647096B
CN101647096B CN2008800107124A CN200880010712A CN101647096B CN 101647096 B CN101647096 B CN 101647096B CN 2008800107124 A CN2008800107124 A CN 2008800107124A CN 200880010712 A CN200880010712 A CN 200880010712A CN 101647096 B CN101647096 B CN 101647096B
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semiconductor
adhesive film
mentioned
stretching
semiconductor wafer
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CN101647096A (zh
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中村祐树
北胜勉
片山阳二
畠山惠一
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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Abstract

本发明提供既能够充分抑制芯片裂纹及毛刺的发生又能够从半导体晶片获得高合格率的半导体芯片的方法。该半导体芯片的制造方法具有以下工序：准备层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，从上述半导体晶片侧形成切槽，以使上述半导体晶片被分割为多个半导体芯片、并且上述半导体用粘接膜在厚度方向上的至少一部分不被切断而保留；以及将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此沿着上述切槽来分割上述半导体用粘接膜的工序。上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％。

Description

半导体芯片的制造方法和半导体用粘接膜及其复合片
技术领域
本发明涉及半导体芯片的制造方法和半导体用粘接膜以及使用该粘接膜的复合片。
背景技术
将半导体芯片安装在支撑部件时，一直以来主要采用银浆作为粘接半导体芯片和支撑部件的管芯焊接(die bonding)材料。但是，伴随着半导体芯片的小型化、高性能化以及所使用支撑部件的小型化、细密化，在采用银浆的方法中，存在由于浆剂的挤出或半导体芯片的倾斜而引起在引线结合(wire bonding)时发生不良之类的问题。因此，近年来，使用粘接膜(半导体用粘接膜)来代替银浆。
作为使用粘接膜来获得半导体装置的方式，有单片粘贴方式和晶片背面粘贴方式。
在单片粘贴方式中，通过切削或冲切从卷状的粘接膜截取单片，并将该粘接膜的单片粘接于支撑部件。借助粘接于支撑部件的粘接膜，将通过其他切割工序单片化后的半导体芯片接合于支撑部件。然后，根据需要经过引线接合工序、密封工序等来获得半导体装置。但是，在单片粘贴方式的情况下，需要用于将粘接膜截取为单片并与支撑部件粘接的专用组装装置，所以与使用银浆的方法相比存在制造成本变高之类的问题。
在晶片背面粘贴方式中，首先，在半导体晶片的背面顺次贴合粘接膜和切割胶带。然后，将半导体晶片切割从而分割成多个半导体芯片，并按照各个半导体芯片来切断粘接膜。之后，同时拾取半导体芯片和层叠于其背面的粘接膜，在粘接膜的作用下将半导体芯片接合于支撑部件。然后，进一步经过加热、固化、引线接合等工序来获得半导体装置。在晶片背面粘贴方式的情况下，不需要用于使粘接膜单片化的组装装置，可直接使用现有的银浆用组装装置、或通过附加热盘等改良了现有的银浆用装置的一部分来进行使用。因此，在使用粘接膜的方法中，作为能够将制造成本抑制得较低的方法而备受关注。
另一方面，近年，作为切割半导体晶片的方法提出了如下的隐形切割(stealth dicing)方法：通过对半导体晶片照射激光从而在半导体晶片内部选择性地形成改质部，并沿着改质部将半导体晶片切断(专利文献1、2)。在该方法中，例如，通过拉伸切割胶带对半导体晶片施加应力，从而沿着改质部将半导体晶片分割为多个半导体芯片。专利文献1：日本特开2002-192370号公报专利文献2：日本特开2003-338467号公报
在上述晶片背面粘贴方式的情况下，需要在切割半导体晶片时也同时切断粘接膜。存在如下的问题：当通过采用了金刚石刀片的一般切割方法来同时切断半导体晶片和粘接膜时，在切断后的半导体芯片侧面产生裂纹(芯片裂纹)、或者在断开面上由于粘接膜破裂而产生多个毛刺(burr)。如果存在芯片裂纹或毛刺，则在拾取半导体芯片时半导体芯变得易于断裂，从而导致合格率降低。
期待通过上述隐形切割在某种程度上抑制伴随着切割而产生的芯片裂纹或毛刺。但是，在采用通过激光加工在半导体晶片形成改质部后拉伸切割胶带来切割半导体晶片的方法的情况下，仅拉伸切割胶带难以将半导体用粘接膜完全分割，由此可知得到高合格率的半导体芯片实际上是困难的。
发明内容
因此，本发明的目的在于提供既能够充分抑制芯片裂纹及毛刺的发生、又能够由半导体晶片获得高合格率的半导体芯片的方法。另外，本发明的其他目的在于提供适用于上述方法的半导体用粘接膜和复合片。
根据一个方面，本发明涉及半导体芯片的制造方法。本发明的制造方法具有以下工序：准备下述层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％，从上述半导体晶片侧形成切槽，以使上述半导体晶片被分割为多个半导体芯片、并且上述半导体用粘接膜在厚度方向上的至少一部分不被切断而保留；以及将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此沿着上述切槽来分割上述半导体用粘接膜的工序。
在上述本发明的制造方法中，准备了半导体用粘接膜不完全被切断而保持连接状态的层叠体。在这基础上，通过切割胶带的拉伸来分割半导体用粘接膜。在上述方法中采用了具有上述特定拉伸断裂伸度的半导体用粘接膜，由此既能够充分抑制芯片裂纹及毛刺的发生、又能够由半导体晶片获得高合格率的半导体芯片。
本发明的半导体芯片的制造方法可具有以下工序：准备层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％，沿着将上述半导体晶片划分成多个半导体芯片的线通过激光加工在上述半导体晶片形成改质部；以及将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此将上述半导体晶片分割为上述多个半导体芯片、并且沿着上述改质部来分割上述半导体用粘接膜的工序。
在上述本发明的制造方法中采用了通过激光加工在半导体晶片形成改质部之后分割半导体晶片的方法，由此与采用切割刀片等的现有方法相比，能够充分地抑制芯片裂纹及毛刺的发生。此外，在上述方法中还采用了具有上述特定拉伸特性的半导体用粘接膜，由此借助切割胶带的拉伸能够有效且可靠地分割半导体用粘接膜，结果能够获得高合格率的半导体芯片。
优选上述半导体用粘接膜含有热塑性树脂、热固化性成分以及填料，并且填料的含量相对于该半导体用粘接膜的质量为小于30质量％。通过将填料的含量在某种程度上抑制得较低、并且对半导体用粘接膜赋予上述特定拉伸特性，可抑制安装后的回流裂纹(reflow crack)的发生。
在上述任意的制造方法中，准备层叠体的工序优选包括将半导体用粘接膜以100℃以下的温度粘贴于半导体晶片的工序。通过使半导体用粘接膜的温度保持得较低、并且将半导体用粘接膜粘贴于半导体晶片，可充分地抑制半导体晶片的弯曲以及由切割胶带或背面研磨胶带(back grindtape)的热过程所引起的损伤。
根据另一方面，本发明涉及半导体用粘接膜。本发明的半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％。通过在上述本发明的制造方法中采用半导体用粘接膜，既能够充分抑制芯片裂纹及毛刺的发生、又能够由半导体晶片获得高合格率的半导体芯片。
上述本发明的半导体用粘接膜优选能够以100℃以下的温度粘贴于半导体晶片。
优选上述本发明的半导体用粘接膜含有热塑性树脂、热固化性成分以及填料，所述填料的含量相对于该半导体用粘接膜的质量为小于30质量％。通过将填料的含量在某种程度上抑制得较低，并且对半导体用粘接膜赋予上述特定的拉伸特性，可进一步抑制回流裂纹的发生。
根据另一方面，本发明涉及具有上述本发明的半导体用粘接膜和层叠于该半导体用粘接膜一面侧的切割胶带的复合片。通过使用上述复合片，能够以简单的工序高效地获得半导体芯片以及半导体装置。
根据本发明，既能够充分地抑制芯片裂纹及毛刺的发生，又能够由半导体晶片获得高合格率的半导体芯片。
附图说明
图1是表示第一实施方式的半导体芯片制造方法的剖视图。图2是表示第一实施方式的半导体芯片制造方法的剖视图。图3是表示第一实施方式的半导体芯片制造方法的剖视图。图4是表示第一实施方式的半导体芯片制造方法的剖视图。图5是表示第一实施方式的半导体芯片制造方法的剖视图。图6是表示第二实施方式的半导体芯片制造方法的剖视图。图7是表示第二实施方式的半导体芯片制造方法的剖视图。图8是表示第二实施方式的半导体芯片制造方法的剖视图。图9是表示第二实施方式的半导体芯片制造方法的剖视图。图10是表示半导体装置一实施方式的剖视图。图11是表示半导体用粘接膜的拉伸试验中的应力-变形曲线的图。图12是表示半导体用粘接膜的拉伸试验中的应力-变形曲线的图。图13是表示半导体用粘接膜的拉伸试验中的应力-变形曲线的图。图14是表示用于进行芯片剥离试验的测定装置的示意图。符号说明
1-半导体晶片，1a-改质部，2-半导体用粘接膜，3-切割胶带，4-切割刀片，5-分割预定线，7-布线基材，8-连接线，9-密封树脂层，10、10a、10b-半导体芯片，20-层叠体，40-切槽，100-半导体装置。
具体实施方式
以下，对本发明的优选实施方式进行详细说明。但是，本发明不限于以下实施方式。
(第一实施方式)图1、2、3、4以及5是表示第一实施方式的半导体芯片制造方法的剖视图。本实施方式的半导体芯片制造方法具有以下工序：准备顺次层叠有半导体晶片1、半导体用粘接膜2以及切割胶带3的层叠体20的工序(图1)；从半导体晶片1侧在层叠体20形成切槽40的工序(图2、3)；沿着切槽40分割半导体用粘接膜2的工序(图4)；以及将半导体芯片10与半导体用粘接膜2一起拾取的工序(图5)。
通过在半导体晶片1的背面顺次粘贴半导体用粘接膜2以及切割胶带3、或者将层叠有半导体用粘接膜2以及切割胶带3的复合片以半导体用粘接膜2位于半导体晶片1侧的朝向粘贴于半导体晶片1的背面的方法，来准备图1的层叠体20。
作为半导体晶片1，使用除了包含单晶硅以外还包含多晶硅、各种陶瓷、镓砷之类的化合物半导体等的晶片。切割胶带3只要是对固定用的环形件(ring)具有能够固定程度的粘着性并能够拉伸到使半导体用粘接膜2断开，就可无限制地使用。例如，可使用氯乙烯系胶带作为切割胶带。半导体用粘接膜2的详细内容如后所述。
在将半导体用粘接膜2或具有该粘接膜的复合片粘贴于半导体晶片1时，半导体用粘接膜的温度优选保持在0～100℃。这样通过以比较低的温度粘贴半导体用粘接膜2，可充分地抑制半导体晶片1的弯曲以及由切割胶带或背面研磨胶带的热过程而引起的损伤。基于同样的观点，上述温度优选为15℃～95℃、最好是20℃～90℃。
对于层叠体20，用切割刀片4从半导体晶片1侧形成切槽40(图2)，以使半导体晶片1被分割为多个半导体芯片10，并且半导体用粘接膜2在厚度方向上的至少一部分不被切断而保留。换言之，半导体晶片1被完全切断，并沿着切断半导体晶片1的线对半导体用粘接膜2进行半切割。
图3是表示形成于层叠体20的切槽40附近的放大剖视图。“半切割”表示切入半导体用粘接膜2的厚度T1以及半导体用粘接膜2的深度T2满足T2/T1＜1的关系。T2/T1优选为1/5～4/5、进一步优选为1/4～3/4、最好为1/3～2/3。如果T2变小，则在沿着切槽40分割半导体用粘接膜2时有防止毛刺发生的趋势，另一方面，即使拉伸切割胶带3，或进一步提高拾取半导体芯片10的突出高度，也存在难以完全分割半导体用粘接膜2的趋势。另外，如果T2变大，则即使拉伸切割胶带的量(以下称为“扩大量”)小，或拾取半导体芯片10时的突出高度低，也存在容易完全分割管芯焊接膜的趋势。但是如果T2过大，则具有毛刺抑制的效果变小、半导体装置制造的成品率降低的趋势。
在形成切槽40后，将切割胶带3在多个半导体芯片10相互分离的方向、即沿着切割胶带3主面的方向(图2中箭头的方向)上拉伸，由此来分割半导体用粘接膜2(图4)。结果，半导体芯片10以及具有粘贴于其上的半导体用粘接膜2的带粘接膜的半导体芯片处于在切割胶带3上排列的状态。
扩大量是拉伸后的切割胶带3的宽度(最大宽度)R1和初始的切割胶带3的宽度(最大宽度)R0(参照图2)之差。扩大量优选为2mm～10mm、进一步优选为2mm～8mm，最好为2mm～7mm。如本实施方式所述，在半导体用粘接膜2形成切槽的情况下，由于存在切断的机会，所以与后述第二实施方式中的不完全切断半导体用粘接膜2的情况相比，可减少扩大量。
在拉伸切割胶带3后，半导体芯片10与粘贴于其背面的半导体用粘接膜2一起被拾取(图5)。在拾取的半导体芯片10的位置上，可以将切割胶带3从与半导体芯片10的相反侧顶出至规定的高度。已拾取的半导体芯片10可使用粘贴于其背面的半导体用粘接膜2作为管芯焊接材料而搭载于各种支撑部件等。下面，对拾取后的工序进行叙述。
以下，对半导体用粘接膜2进行详细说明。
半导体用粘接膜2的一个特征是拉伸断裂伸度比较短。半导体用粘接膜2在拉伸试验中不会屈服，并且经过最大负荷而屈服之后发生断裂。通过具有这样的拉伸特性，半导体用粘接膜2在拉伸应力的作用下发生断裂时该断裂面不容易起毛刺，从而能够充分地抑制毛刺发生。
更具体地说，半导体用粘接膜2的拉伸断裂伸度优选小于5％。另外，半导体用粘接膜2的拉伸断裂伸度相对于在拉伸试验中最大负荷时的伸度优选为小于110％。由于半导体用粘接膜2具有这样的拉伸特性，从而可以利用较小的扩大量来高效且可靠地分割半导体用粘接膜2。
当拉伸断裂伸度为5％以上时，为了完全分割半导体用粘接膜2，需要使切割胶带3的扩大量增大到通常以上。另外，在拉伸断裂伸度相对于最大负荷时伸度的比例为110％以上的情况下，对应于屈服状态长的情况以及容易引起缩颈的情况时，存在难以既抑制毛刺又完全分割半导体用粘接膜2的趋势。
基于与上述同样的观点，拉伸断裂伸度优选小于4％，最好小于3.5％。同样，拉伸断裂伸度相对于最大负荷时伸度的比率优选为小于108％，最好为小于105％。另外，该比率在拉伸断裂伸度与最大负荷时的伸度一致的情况下，处于最低值100％。
使用从B阶段状态的半导体用粘接膜中截取的具有宽度5mm、长度50mm、厚度25μm尺寸的长方形状试验片，在25℃环境下，利用以下条件进行拉伸试验，由此求出最大应力、最大负荷伸度以及拉伸断裂伸度。拉伸试验机：SIMADZU制造100N自动绘图仪(autograph)「AGS-100NH」卡盘间距离(试验开始时)：30mm拉伸速度：5mm/分
根据拉伸试验所获得的应力-变形曲线来读取最大负荷、最大负荷时的卡盘间长度以及断裂时的卡盘间长度，并采用这些值和试样截面积的实测值，通过下述公式算出最大应力、最大负荷伸度以及拉伸断裂伸度。最大应力(Pa)＝最大负荷(N)/试样的截面积(m2)最大负荷时的伸度(％)＝{(最大负荷时的卡盘间长度(mm)-30)/30}×100拉伸断裂伸度(％)＝{(断裂时的卡盘间长度(mm)-30)/30}×100
通常，对多个试验片进行测定，记录其平均值作为该半导体用粘接膜的拉伸特性。从再现性的观点出发，虽然拉伸试验优选在上述条件下进行，但实质上也可以变更为能够得到同一试验结果的其他条件。
半导体用粘接膜2优选含有热塑性树脂、热固化性成分以及填料。通过由这些成分构成半导体用粘接膜2并调整各成分的种类以及配合量，可获得具有上述特定拉伸特性的半导体用粘接膜2。
构成半导体用粘接膜的热塑性树脂优选具有60℃以下的玻璃转移温度(Tg)。另外，优选具有300℃以上的耐热性的热塑性树脂。作为适合的热塑性树脂的具体例，可以举出聚酰亚胺树脂、聚酰胺酰亚胺树脂、苯氧基树脂、丙烯酸树脂、聚酰胺树脂和聚氨酯树脂。它们可以使用1种也可组合多种使用。它们中，特别优选聚酰胺树脂。通过采用聚酰胺树脂，可以在某种程度上将填料的含量维持得较小，并且能够对半导体用粘接膜2容易地赋予如上所述的拉伸特性。
热固化性成分是经过加热进行交联而能够形成固化体的成分，例如，可以包含热固化性树脂以及该热固化性树脂的固化剂。作为热固化性树脂可以使用现有公知的内容，没有特别地限制，但基于作为半导体周边材料的便利性(容易得到高纯度产品，品种多，容易控制反应性)的点，优选环氧树脂以及1个分子中具有至少2个热固化性酰亚胺基的酰亚胺化合物。环氧树脂树脂通常与环氧树脂树脂固化剂一起使用。
环氧树脂优选为具有2个以上环氧基的化合物。从固化性和固化物特性的方面考虑，优选酚的缩水甘油基醚型环氧树脂。作为酚的缩水甘油基醚型环氧树脂，可以举出例如，双酚A、双酚AD、双酚S、双酚F或卤化双酚A与表氯醇的缩合物；苯酚酚醛清漆树脂的缩水甘油基醚；甲酚酚醛清漆树脂的缩水甘油基醚；以及双酚A酚醛清漆树脂的缩水甘油基醚。在这些树脂之中，从固化物的交联密度高、能够提高膜受热时的粘接强度的方面出发，优选酚醛清漆型环氧树脂(甲酚酚醛清漆树脂的缩水甘油基醚和苯酚酚醛清漆树脂的缩水甘油基醚等)。这些树脂可以单独使用或两种以上组合使用。
作为环氧树脂固化剂例如可以举出：酚系化合物、脂肪族胺、脂环族胺、芳香族多胺、聚酰胺、脂肪酸酐、脂环酸酐、芳香族酸酐、双氰胺、有机酸二酰肼、三氟化硼胺络合物、咪唑类以及叔胺。其中，优选酚系化合物，其中特别优选具有2个以上酚性羟基的酚系化合物。更具体地说，优选萘酚酚醛清漆树脂和三苯酚酚醛清漆树脂(trisphenol novolac resin)。当将这些酚系化合物用作环氧树脂树脂固化剂时，能够有效地降低下述外气的发生，该外气是为了封装组装而加热时芯片表面及装置的污染、以及臭气的原因。
通过调整填料的含量可控制半导体用粘接膜的拉伸特性。当增加填料的含量时，有拉伸断裂伸度变小的趋势和拉伸断裂伸度相对于最大负荷时伸度的比率变小的趋势。另外，通过适量使用填料，还能够获得使用性提高、热传导性提高、熔化粘度的调整、触变性的赋予等效果。
从上述目的的观点出发，优选填料是无机填料。更具体地说，优选含有选自由氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶性二氧化硅、非晶态二氧化硅和锑氧化物构成的组中的至少一种无机材料的无机填料。在这些无机材料之中，为了提高热传导性，优选氧化铝、氮化铝、氮化硼、结晶性二氧化硅和非晶性二氧化硅。为了调整熔融粘度或赋予触变性，优选氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、结晶性二氧化硅和非晶性二氧化硅。此外，为了提高耐湿性，优选氧化铝、二氧化硅、氢氧化铝和锑氧化物。还可以混合多种填料使用。
当填料的含量变多时，存在拉伸断裂伸度变小且弹性率变高、断裂强度上升的趋势，而且由于粘接性降低也存在抗回流裂纹性降低的趋势。尤其，当在有机基板之类的表面形成有凹凸的被覆体与半导体芯片之间存在回流时存在容易进行破坏的趋势。另外，当填料的含量变多时，还存在对HAST试验等的高温高湿环境下的可靠性试验的耐性降低的趋势。而且，当填料的含量变多时，能够向半导体晶片粘贴半导体用粘接膜的温度也存在上升的趋势。鉴于如上的情况，填料的含量相对于半导体用粘接膜的全部质量优选为小于30质量％，进一步优选为小于质量25％。最优选为小于20质量％。
半导体用粘接膜2优选能够以100℃以下的温度粘贴于作为被覆体的半导体晶片。这里，将保持为规定温度的半导体用粘接膜粘贴于半导体晶片时，如果半导体用粘接膜与半导体晶片之间的界面的剥离强度为20N/m以上，则可以判断为可粘贴于半导体晶片。例如可采用温度被设定为100℃以下的热辊层压体将半导体用粘接膜粘贴于半导体晶片。在25℃的氛围中以拉伸角度90°、拉伸速度50mm/分来进行剥离强度的测定。例如，通过减小填料的含量或者采用具有低Tg的热塑性树脂，能够在100℃以下获得可粘贴于半导体晶片的半导体用粘接膜。能够将半导体用粘接膜2粘贴于半导体晶片的温度优选为95℃以下，最优选为90℃以下。
半导体用粘接膜2优选具有在半导体芯片搭载用支撑部件搭载半导体芯片时所需的耐热性和耐湿性。为此，优选进行抗回流裂纹性试验。可将粘接强度作为指标来评价半导体用粘接膜的抗回流裂纹性。为了获得良好的抗回流裂纹性，在以4×2mm见方的粘接面积将半导体用粘接膜粘贴于半导体晶片时，优选初始的剥离强度为1.0kg/cm以上，在85℃/85％的氛围下放置了48小时之后为0.5kg/cm以上。进一步优选初始的剥离强度为1.3kg/cm以上，更优选为1.5kg/cm。优选在85℃/85％的氛围下放置了48小时后的剥离强度为0.7kg/cm以上，更优选为0.8kg/cm以上。
例如，可通过以下方法来得到半导体用粘接膜2，即，将含有热塑性树脂、热固化性成分、填料以及溶解或分散它们的有机溶剂的涂敷液涂敷于基材膜，并利用加热从基材膜上的涂敷液中去除有机溶剂。
对有机溶剂没有限制，只要是能够将材料均匀溶解或分散的有机溶剂即可。可以举出例如，二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮、二甲基亚砜、二甘醇二甲醚、甲苯、苯、二甲苯、甲基乙基酮、四氢呋喃、乙基溶纤剂、乙基溶纤剂乙酸酯、丁基溶纤剂、二噁烷、环己酮和乙酸乙酯。这些可单独使用也可组合两种以上使用。
对于基材膜并无特别限定，只要是能够耐受为了除去有机溶剂而进行的加热即可。作为基材膜的例子，可以举出聚酯膜、聚丙烯膜、聚对苯二甲酸乙二醇酯膜、聚酰亚胺膜、聚醚酰亚胺膜、聚醚萘酸酯膜和甲基戊烯膜。也可以使用组合两种以上这些膜而成的多层膜作为基材膜。基材膜的表面也可以利用硅酮系、二氧化硅系等脱模剂等进行处理。除去有机溶剂后，可以直接用作半导体用粘接膜的支撑体，而不必除去基材膜。
半导体用粘接膜还能够以与切割胶带贴合的复合片的状态保管和使用。通过采用这样的复合片，可简化半导体装置的制造工序。
(第二实施方式)图6、7、8以及9是表示第二实施方式的半导体芯片的制造方法的剖视图。本实施方式的方法具有：准备顺次层叠有半导体晶片1、半导体用粘接膜2以及切割胶带3的层叠体20的工序(图6～8)；在多个半导体芯片10相互分离的方向上拉伸切割胶带3，由此将半导体晶片1分割为多个半导体芯片10，并且分割半导体用粘接膜2的工序(图9)；以及将半导体芯片10与半导体用粘接膜2一起拾取的工序。
准备层叠体20的工序包括：沿着利用激光加工将半导体晶片1划分为多个半导体芯片10的线50(以下称为「分割预定线」。)在半导体晶片1的内部形成改质部1a的工序(图6)；在形成有改质部1a的半导体晶片1粘贴半导体用粘接膜2的工序(图7)；以及在半导体用粘接膜2粘贴切割胶带3的工序(图8)。
在利用激光加工形成改质部1a的工序中，激光90沿着分割预定线50进行照射(图6(b))。在公知的所谓隐形切割的方法中可利用通常采用的条件进行激光加工。通过激光加工可在半导体晶片1的内部形成改质部1a。
然后，如图7，8所示，在半导体晶片1依次粘贴半导体用粘接膜2以及切割胶带3，得到层叠体20。
得到层叠体20的工序不限于本实施方式的顺序。例如，也在半导体晶片粘贴半导体用粘接膜后，通过激光加工形成改质部。
得到层叠体20后，通过在多个半导体芯片10相互分离的方向(图8(b)的箭头方向)上拉伸切割胶带3，从而将半导体晶片1分割为多个半导体芯片10，并沿着改质部1a将半导体用粘接膜2分割(图9)。
根据本实施方式，半导体晶片1及半导体用粘接膜2可通过切割胶带的拉伸来进行分割，而无需利用切割刀片来切断。根据此方法，不需要利用切割刀片同时切断半导体晶片1和半导体用粘接膜2，因此能够提高半导体芯片单片化的速度，还能够抑制毛刺的发生。
在本实施方式的情况下，切割胶带3的扩大量优选为5～30mm，进一步优选为10～30mm，更优选为10～20mm。当扩大量小于5mm时，有难以完全分割半导体晶片1和半导体用粘接膜2的趋势，当超过30mm时有容易引起分割预定线以外的部分断裂的趋势。
另外，在本实施方式中，拉伸切割胶带3的速度(扩大速度)优选为10～1000mm/秒，进一步优选为10～100mm/秒，更优选为10～50mm/秒。当扩大速度小于10mm/秒时，有难以完全分割半导体晶片1和半导体用粘接膜2的趋势，当超过1000mm/秒时，有容易引起分割预定线以外的部分断裂的趋势。
如以上所述，由第一实施方式或第二实施方式的方法获得的、与半导体用粘接膜2一起拾取的半导体芯片10，例如构成IC、LSI之类的半导体元件。半导体芯片10例如可借助粘贴于其背面的半导体用粘接膜2与支撑部件粘接。作为支撑部件，可以举出例如，42合金引线框和铜引线框等引线框；由环氧树脂、聚酰亚胺系树脂和马来酰亚胺系树脂等形成的树脂膜；在玻璃无纺布或玻璃织布中浸渍环氧树脂、聚酰亚胺系树脂和马来酰亚胺系树脂等热固化性树脂，并使所述树脂固化而得到的基板；以及玻璃基板和氧化铝等陶瓷基板。
半导体芯片彼此间可借助半导体用粘接膜进行粘接。图10是表示由此方法获得的半导体装置的一实施方式的剖视图。图10所示的半导体装置100具有：附有布线的基材(支撑部件)7、借助半导体用粘接膜2与附有布线的基材7粘接的半导体芯片10a以及借助半导体用粘接膜2与半导体芯片10a粘接的半导体芯片10b。半导体芯片10a以及10b通过连接线8与附有布线的基材7的布线连接。另外，半导体芯片10a和10b由埋设这些半导体芯片的密封树脂层9来密封。
半导体芯片与支撑部件的粘接、以及半导体芯片彼此间的粘接可通过下述方式来进行，例如，在半导体芯片与支撑部件之间或半导体芯片彼此之间夹持半导体用粘接膜的状态下，以60～300℃加热0.1～300秒，。
在半导体用粘接膜2含有热固化性树脂的情况下，优选将粘接后的半导体芯片加热，促进半导体用粘接膜向被覆体的密封及固化，从而增加接合部的强度。此时的加热可根据粘接膜的组成来进行适当调整，通常是在60～220℃下进行0.1～600分钟。在进行树脂密封时，也可利用密封树脂的固化工序的加热。实施例
以下，举出实施例对本发明更具体地进行说明。但是，本发明不限于以下的实施例。
1.半导体用粘接膜的制作实施例1在装有温度计、搅拌机和氯化钙管的500ml的四口烧瓶中，加入作为二胺的1，3-二(3-氨基丙基)四甲基二硅氧烷(0.1mol)和作为溶剂的N-甲基-2-吡咯烷酮150g，于60℃进行搅拌。二胺溶解后，少量地添加1，10-(十亚甲基)-双(偏苯三酸二酐)(0.02mol)和4，4’-氧联二邻苯二甲酸酐(0.08mol)，于60℃反应3小时。其后，吹入N2气的同时，于170℃进行加热，花3小时的时间利用共沸将体系中的水与部分溶剂一起除去。将除去水所得到的聚酰亚胺树脂的NMP溶液用于制作粘接膜。
在上述得到的聚酰亚胺树脂的NMP溶液(含100重量份的聚酰亚胺树脂)中，加入4重量份甲酚酚醛清漆型环氧树脂(东都化成制造)、2重量份4，4’-[1-[4-[1-(4-羟基苯基)-1-甲基乙基]苯基]亚乙基]双酚(本州化学制造)、0.5重量份四苯基鏻四苯基硼(tetraphenylphosphonium tetraphenylborate)(东京化成制造)。再加入相对于总固体成分的重量为12重量％的氮化硼填料(水岛合金铁制造)、相对于总固体成分的重量为3重量％的Aerosil filler(日文：アエロジルフイラ)R972(日本AEROSIL制造)，充分混炼，得到清漆。将调配好的清漆涂布于剥离处理后的聚对苯二甲酸乙二醇酯膜，于80℃加热30分钟，接着，于120℃加热30分钟，然后于室温(25℃)下剥离聚对苯二甲酸乙二醇酯膜，得到厚度25μm的粘接膜。
实施例2使用1，3-双(3-氨基丙基)四甲基二硅氧烷(0.06mol)和4，9-二氧杂癸烷-1，12-二胺(0.04mol)作为二胺成分，除此以外，与实施例1同样地得到聚酰亚胺树脂的NMP溶液。使用已得到的聚酰胺树脂的NMP溶液与实施例1同样地制作粘接膜。
实施例3除了使氮化硼填料的量为57重量％以外，与实施例1同样地制作粘接膜。
比较例1～3作为比较例1的粘接膜准备DF-402，作为比较例2的粘接膜准备DF-470，作为比较例3的粘接膜准备DF-443(均是日立化成工业株式会社制造的管芯焊接膜)。
比较例4在装有温度计、搅拌机和氯化钙管的500ml的四口烧瓶中加入醚二胺2000(BASF公司制造)(0.03摩尔)、1，12-二氨基十二烷(0.07摩尔)和N-甲基-2-吡咯烷酮150g，于60℃进行搅拌。二胺溶解后，一点点地添加2，2-双[4-(3，4-二羧基苯氧基)苯基]丙烷二酐(0.1摩尔)。于60℃反应1小时后，吹入N2气，同时于170℃进行加热，利用共沸将水与部分溶剂一起除去。将除去水而得到的聚酰亚胺树脂的NMP溶液用于制作粘接膜。使用所得到的溶液，并使氮化硼填料的量相对于总固体成分的重量为25重量％，除此以外，与实施例1同样地制作粘接膜。
比较例5除了使氮化棚填料的量为47重量％以外，与比较例4同样地制作粘接膜。
2.粘接膜的评价(1)最大应力、最大负荷伸度以及拉伸断裂伸度采用从B阶段状态的粘接膜中截取的长方形状的试验片(宽度5mm，长度50mm)进行拉伸试验。根据得到的应力-变形曲线，利用下述的计算式求出最大应力、最大负荷伸度以及拉伸断裂伸度。拉伸试验是采用拉伸试验机(SIMADZU制造100N自动绘图仪，AGS-100NH)，在25℃的氛围中、在试验开始时的卡盘间距离30mm、拉伸速度5mm/min的条件下进行的。最大应力(Pa)＝最大负荷(N)/试样的截面积(m2)最大负荷伸度(％)＝[(最大负荷中的卡盘间长度(mm)-30)/30]×100拉伸断裂伸度(％)＝[(断裂时的卡盘间长度(mm)-30)/30]×100
图11是实施例1的粘接膜的应力-变形曲线的图，图12是实施例2的粘接膜的应力-变形曲线的图，图13是表示比较例1的粘接膜的应力-变形曲线的图。在图中，伸度(mm)＝卡盘间长度-30。根据与最大负荷Pmax对应的伸度算出最大负荷伸度，在试验片断裂后，根据负荷降至0的时刻的伸度E算出拉伸断裂伸度。
(2)晶片粘贴温度采用已升温至规定温度的热辊层压机(0.3m/分，0.3MPa)贴合宽度10mm的粘接膜和半导体晶片，然后，在25℃的氛围中以拉伸角度90°、拉伸速度50mm/分钟进行剥离粘接膜的剥离试验，求出剥离强度。剥离试验是采用TOYOBALDWIN制造的UTM-4-100型万能拉力机来进行的。使热辊层压机的设定温度从40℃开始每次升温10℃，将取得20N/m以上的剥离强度时的热辊层压机温度中最低的温度作为晶片粘贴温度。
(3)剥离强度(芯片剥离强度)将厚度400μm的硅晶片从其表面侧半切割至250μm的深度，并在里侧方向上施加力进行切割，由此准备在周缘部形成有宽度150μm的边儿的4mm×2mm的硅芯片。在该硅芯片与42合金引线框之间夹持截取为4mm×2mm大小的粘接膜。对整体施加200gf的负荷，在160℃下压接5秒钟，并通过在180℃下加热60分钟使粘接膜后固化。然后，采用改良了推拉力计(push pull gauge)的图14所示的测定装置15测定260℃、20秒加热时的芯片剥离强度。测定装置15具有热盘14、载置于该热盘14上的垫料块(die pat)13和推拉力计12。在测定装置15的垫料块13上放置试样，在硅芯片的边儿安装推拉力计12进行芯片剥离强度的测定。对最初以及实施了在85℃、85％RH环境下放置48小时的高温高湿处理后的样本进行该剥离强度的测定。根据该测定可测定粘接膜的面粘接强度。该数值越高，回流裂纹越难以发生。
(4)抗回流裂纹性将切成5mm见方的硅芯片和具有粘贴于该硅芯片的粘接膜的带粘接膜硅芯片与在作为基材的聚酰亚胺膜(厚度25μm)的表面形成有布线的布线基板接合。然后，在该硅芯片上接合5mm见方的带其他粘接膜的硅芯片。
对于所得到的10个样本，使其通过按照表面温度达到260℃且在该温度下保持20秒钟的方式设定的IR回流炉，然后，反复实施两次在室温(25℃)下放置冷却的处理。利用目测以及超声波显微镜观察处理后的样本中的裂纹，确认基板/芯片间以及芯片/芯片间的裂纹的发生状态。根据观察结果，按照以下基准来评价抗回流裂纹性。A：在所有样本中未识别出裂纹的发生。C：在1个以上的样本中发生裂纹。
[表1]
(5)断裂性，芯片裂纹以及毛刺将在上述实施例或比较例中制作的粘接膜与半导体晶片贴合，通过以下的“全切割”、“半切割”或“激光切割”的方法将半导体晶片分割为半导体芯片，并确认了此时的粘接膜的断裂性和芯片裂纹以及毛刺的产生状态。在任一方法中都使用氯乙烯系胶带(厚度90μm)作为切割胶带。
全切割采用热辊层压机(JCM公司制造DM-300H，0.3m/分，0.3MPa)，在表1的晶片粘贴温度下将各个粘接膜贴附于50μm厚的半导体晶片。然后，在热板温度80℃的条件下将切割胶带层压于粘接膜，由此，制作了切割样本。在切割胶带周缘部贴附不锈钢制的环形件，并用DISCO公司制造的DFD-6361切断切割样本。使用1枚刀片结束加工的单切割方式，在刀片为NBC-ZH104F-SE 27HDBB、刀片转速为45,000rpm、切割速度为50mm/s的条件下进行切割。切割时的刀片切割深度(切槽深度)为完全切断粘接膜的高度即80μm。接着，在固定了环形件的状态下，利用扩大装置拉伸切割胶带。扩大速度是10mm/s，扩大量是3mm。
半切割将刀片切割深度(切槽深度)设为不切断而在管芯焊接膜中保留有10μm厚度份的高度100μm，除此以外，以与上述全切割相同的条件进行试验。
激光切割对半导体晶片(厚度50μm)进行激光照射，在其内部沿着划分为半导体芯片的线形成改质部。然后，按照与全切割相同的顺序依次粘贴粘接膜和切割胶带，在切割胶带的外周部贴附不锈钢制的环形件。然后，利用扩大装置在固定了环形件的状态下拉伸切割胶带。扩大速度为30mm/s，扩大量为15mm。
断裂性拉伸了切割胶带后，用光学显微镜观察粘接膜是否已断裂，求出在剖截面全长中完全断裂的部分的长度比率，由以下基准对该比率进行分类并评价断裂性。另外，在全切割的情况下，利用切割刀片来切断粘接膜，因此不进行断裂性的评价。AA：98％以上A：90％以上B：50％以上且小于90％C：小于50％
芯片裂纹拉伸了切割胶带后，用光学显微镜观察芯片裂纹的发生状态。求出在与半导体芯片粘接膜的相对侧的面发生的芯片裂纹的长度，并按照以下基准来对芯片裂纹的长度进行分类并评价芯片裂纹的发生状态。AA：小于5μmA：5μm以上且小于10μmB：10以上且小于25μmC：25μm以上
毛刺在拉伸切割胶带后，一起拾取半导体芯片和粘接膜。用光学显微镜观察已拾取的带粘接膜的半导体芯片的端面，确认毛刺的发生状态。AA：毛刺的长度小于20μmA：毛刺的长度为20μm以上且小于40μmB：毛刺的长度为40以上且小于100μmC：毛刺的长度为100μm以上
[表2]
Figure G2008800107124D00211
在拉伸断裂伸度小于5％、且拉伸断裂伸度/最大负荷时的伸度小于110％的实施例的粘接膜中，半切割以及激光切割中的任意一个均显示良好的断裂性，还能够充分地抑制芯片裂纹以及毛刺的发生。此外，在填料含量为小于30质量％的实施例1、2的粘接膜中，在100℃以下可粘贴到半导体晶片，在抗回流裂纹性方面也非常良好。
由此可知，在拉伸断裂伸度在5％以上、或拉伸断裂伸度/最大负荷时的伸度为110％以上的比较例的粘接膜的情况下，断裂性不一定充分，因而无法制造高合格率的半导体芯片。比较例3虽然在半切割的情况下显示了比较良好的断裂性，但在激光切割方面不能显示充分的断裂性。

Claims (8)

1.一种半导体芯片的制造方法，具有以下工序：
准备层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％，从上述半导体晶片侧形成切槽，以使上述半导体晶片被分割为多个半导体芯片、并且上述半导体用粘接膜在厚度方向上的至少一部分不被切断而保留；以及
将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此沿着上述切槽来分割上述半导体用粘接膜的工序。
2.一种半导体芯片的制造方法，具有以下工序：
准备层叠体的工序，该层叠体顺次层叠半导体晶片、半导体用粘接膜以及切割胶带，上述半导体用粘接膜具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％，沿着将上述半导体晶片划分成多个半导体芯片的线通过激光加工在上述半导体晶片形成改质部；以及
将上述切割胶带在上述多个半导体芯片相互分离的方向上进行拉伸，由此将上述半导体晶片分割为上述多个半导体芯片、并且沿着上述改质部来分割上述半导体用粘接膜的工序。
3.根据权利要求1或2所述的制造方法，其中，
上述半导体用粘接膜含有热塑性树脂、热固化性成分以及填料，上述填料的含量相对于该半导体用粘接膜的质量为小于30质量％。
4.根据权利要求1或2所述的制造方法，其中，
准备上述层叠体的工序包括：将上述半导体用粘接膜以100℃以下的温度粘贴于上述半导体晶片的工序。
5.一种半导体用粘接膜，其应用于权利要求1或2所述的制造方法中，并且具有小于5％的拉伸断裂伸度，该拉伸断裂伸度小于最大负荷时的伸度的110％。
6.根据权利要求5所述的半导体用粘接膜，其能够以100℃以下的温度粘贴于半导体晶片。
7.根据权利要求5所述的半导体用粘接膜，其含有热塑性树脂、热固化性成分以及填料，上述填料的含量相对于该半导体用粘接膜的质量为小于30质量％。
8.一种复合片，其具有权利要求5所述的半导体用粘接膜以及层叠于该半导体用粘接膜的一面侧的切割胶带。
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