TWI419215B - 半導體晶片之製造方法、半導體用黏接薄膜及使用其之複合片 - Google Patents

半導體晶片之製造方法、半導體用黏接薄膜及使用其之複合片 Download PDF

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Publication number
TWI419215B
TWI419215B TW097112292A TW97112292A TWI419215B TW I419215 B TWI419215 B TW I419215B TW 097112292 A TW097112292 A TW 097112292A TW 97112292 A TW97112292 A TW 97112292A TW I419215 B TWI419215 B TW I419215B
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Taiwan
Prior art keywords
semiconductor
adhesive film
semiconductor wafer
less
break
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TW097112292A
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English (en)
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TW200903609A (en
Inventor
Yuuki Nakamura
Tsutomu Kitakatsu
Youji Katayama
Keiichi Hatakeyama
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Hitachi Chemical Co Ltd
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Publication of TW200903609A publication Critical patent/TW200903609A/zh
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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    • C09J7/00—Adhesives in the form of films or foils
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Claims (8)

  1. 一種半導體晶片之製造方法，其特徵為具備：積層體的準備步驟，該積層體係依半導體晶圓、半導體用黏接薄膜與切割帶之順序被積層，上述半導體用黏接薄膜具有小於5%之拉伸斷裂伸長率、該拉伸斷裂伸長率為小於最大荷重時之伸長率的110%，以上述半導體晶圓被分割成多個半導體晶片，同時上述半導體用黏接薄膜之厚度方向之至少一部分不被切斷而殘留的方式，由上述半導體晶圓側形成切槽者；以及分割步驟，藉由將上述切割帶朝上述多個半導體晶片互相分離之方向拉伸，將上述半導體用黏接薄膜沿著上述切槽予以分割。
  2. 一種半導體晶片之製造方法，其特徵為具備：積層體之準備步驟，該積層體係以半導體晶圓，半導體用黏接薄膜與切割帶之順序被積層，上述半導體用黏接薄膜具有小於5%之拉伸斷裂伸長率且該拉伸斷裂伸長率為小於最大荷重時之伸長率的110%，沿著將上述半導體晶圓劃分為多個半導體晶片之線，以雷射加工在上述半導體晶圓形成改質部者；以及分割步驟，藉由將上述切割帶朝上述多個半導體晶片互相分離的方向拉伸，將上述半導體晶圓分割成上述多個半導體晶片，同時沿著上述改質部分割上述半導體用黏接薄膜。
  3. 如申請專利範圍第1或2項之製造方法，其中上 述半導體用黏接薄膜含有熱塑性樹脂、熱固性成分以及填料(Filler)，上述填料之含量對該半導體用黏接薄膜之質量為小於30質量%。
  4. 如申請專利範圍第1或2項之製造方法，其中上述積層體的準備步驟，係包含將上述半導體用黏接薄膜在100℃以下之溫度黏貼於上述半導體晶圓之步驟。
  5. 一種半導體用黏接薄膜，係申請專利範圍第1項或第2項所記載之製造方法所使用，其具有小於5%之拉伸斷裂伸長率，該拉伸斷裂伸長率為小於最大荷重時之伸長率的110%。
  6. 如申請專利範圍第5項之半導體用黏接薄膜，其中其可在100℃以下黏貼於半導體晶圓。
  7. 如申請專利範圍第5項之半導體用黏接薄膜，其中其含有熱塑性樹脂、熱固性成分與填料，而上述填料之含量對該半導體用黏接薄膜之質量為小於30質量%。
  8. 一種複合片，其特徵為具備：申請專利範圍第5項所記載之半導體用黏接薄膜；以及積層於該半導體用黏接薄膜之一側面之切割帶。
TW097112292A 2007-04-05 2008-04-03 半導體晶片之製造方法、半導體用黏接薄膜及使用其之複合片 TWI419215B (zh)

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US20120244347A1 (en) 2012-09-27
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WO2008126718A1 (ja) 2008-10-23
TW200903609A (en) 2009-01-16
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CN101647096B (zh) 2012-01-04
EP2139028A1 (en) 2009-12-30
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