JP6970554B2 - 加工方法 - Google Patents

加工方法 Download PDF

Info

Publication number
JP6970554B2
JP6970554B2 JP2017158723A JP2017158723A JP6970554B2 JP 6970554 B2 JP6970554 B2 JP 6970554B2 JP 2017158723 A JP2017158723 A JP 2017158723A JP 2017158723 A JP2017158723 A JP 2017158723A JP 6970554 B2 JP6970554 B2 JP 6970554B2
Authority
JP
Japan
Prior art keywords
workpiece
work piece
held
division line
holding table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017158723A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019034391A (ja
Inventor
奈緒 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017158723A priority Critical patent/JP6970554B2/ja
Priority to KR1020180090322A priority patent/KR102524259B1/ko
Priority to CN201810921439.6A priority patent/CN109421179B/zh
Priority to TW107128938A priority patent/TWI774828B/zh
Publication of JP2019034391A publication Critical patent/JP2019034391A/ja
Application granted granted Critical
Publication of JP6970554B2 publication Critical patent/JP6970554B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007Use, recovery or regeneration of abrasive mediums
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B28D5/0094Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Removal Of Specific Substances (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
JP2017158723A 2017-08-21 2017-08-21 加工方法 Active JP6970554B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017158723A JP6970554B2 (ja) 2017-08-21 2017-08-21 加工方法
KR1020180090322A KR102524259B1 (ko) 2017-08-21 2018-08-02 가공 방법
CN201810921439.6A CN109421179B (zh) 2017-08-21 2018-08-14 加工方法
TW107128938A TWI774828B (zh) 2017-08-21 2018-08-20 加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017158723A JP6970554B2 (ja) 2017-08-21 2017-08-21 加工方法

Publications (2)

Publication Number Publication Date
JP2019034391A JP2019034391A (ja) 2019-03-07
JP6970554B2 true JP6970554B2 (ja) 2021-11-24

Family

ID=65513734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017158723A Active JP6970554B2 (ja) 2017-08-21 2017-08-21 加工方法

Country Status (4)

Country Link
JP (1) JP6970554B2 (zh)
KR (1) KR102524259B1 (zh)
CN (1) CN109421179B (zh)
TW (1) TWI774828B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112975653A (zh) * 2021-02-05 2021-06-18 何宽 一种用于椭圆环形光学玻璃的加工装置
KR102654348B1 (ko) * 2022-04-07 2024-04-04 (주)이오테크닉스 홈 형성 장치 및 홈 형성 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07110455B2 (ja) * 1992-10-27 1995-11-29 住友電気工業株式会社 ウェハ固定装置
US5445559A (en) * 1993-06-24 1995-08-29 Texas Instruments Incorporated Wafer-like processing after sawing DMDs
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
EP1579971B1 (en) * 2002-11-22 2011-10-05 Mitsuboshi Diamond Industrial Co., Ltd. Method for dividing a substrate and a panel production method
JP4846411B2 (ja) 2006-03-30 2011-12-28 株式会社ディスコ 半導体パッケージ用治具
JP2009148982A (ja) 2007-12-20 2009-07-09 Daitron Technology Co Ltd ブレーキング装置
JP5758116B2 (ja) * 2010-12-16 2015-08-05 株式会社ディスコ 分割方法
JP5950502B2 (ja) * 2011-03-23 2016-07-13 株式会社ディスコ ウエーハの分割方法
JP2013038434A (ja) 2012-09-13 2013-02-21 Daitron Technology Co Ltd ブレーキング装置
JP6043150B2 (ja) * 2012-10-29 2016-12-14 三星ダイヤモンド工業株式会社 積層脆性材料基板のブレイク装置および積層脆性材料基板のブレイク方法
EP2762286B1 (en) * 2013-01-31 2015-07-01 ams AG Dicing method
JP6151557B2 (ja) 2013-05-13 2017-06-21 株式会社ディスコ レーザー加工方法
JP6325279B2 (ja) * 2014-02-21 2018-05-16 株式会社ディスコ ウエーハの加工方法
JP6430759B2 (ja) 2014-09-24 2018-11-28 株式会社ディスコ レーザー加工装置
JP2016082162A (ja) * 2014-10-21 2016-05-16 株式会社ディスコ ウエーハの加工方法
JP6407066B2 (ja) * 2015-03-06 2018-10-17 株式会社ディスコ 光デバイスチップの製造方法
JP2017054956A (ja) * 2015-09-10 2017-03-16 株式会社ディスコ 被加工物の支持治具
JP2017135232A (ja) * 2016-01-27 2017-08-03 株式会社ディスコ 分割治具およびウエーハの分割方法
JP6556066B2 (ja) 2016-02-09 2019-08-07 株式会社ディスコ 切削装置
JP6316395B2 (ja) * 2016-12-16 2018-04-25 三星ダイヤモンド工業株式会社 積層セラミックス基板のスクライブ装置

Also Published As

Publication number Publication date
KR102524259B1 (ko) 2023-04-20
TW201912282A (zh) 2019-04-01
KR20190020615A (ko) 2019-03-04
CN109421179B (zh) 2022-03-01
TWI774828B (zh) 2022-08-21
JP2019034391A (ja) 2019-03-07
CN109421179A (zh) 2019-03-05

Similar Documents

Publication Publication Date Title
JP6506520B2 (ja) SiCのスライス方法
KR102384101B1 (ko) 웨이퍼의 박화 방법
KR102313271B1 (ko) 웨이퍼의 가공 방법
JP2005203541A (ja) ウエーハのレーザー加工方法
JP6324796B2 (ja) 単結晶基板の加工方法
JP2005086161A (ja) ウエーハの加工方法
JP2016198788A (ja) レーザー加工装置
JP2020035873A (ja) SiC基板の加工方法
KR102680919B1 (ko) 모따기 가공 방법
KR102486694B1 (ko) 광 디바이스 웨이퍼의 가공 방법
KR20170126407A (ko) 레이저 가공 장치
JP4447392B2 (ja) ウエーハの分割方法および分割装置
TW201709300A (zh) 單晶基板之加工方法
JP2006202933A (ja) ウエーハの分割方法
JP5495869B2 (ja) レーザー加工溝の確認方法
JP6970554B2 (ja) 加工方法
TW201707069A (zh) 單晶基板之加工方法
JP6981806B2 (ja) 分割方法
JP5846765B2 (ja) ウエーハの加工方法
JP6576782B2 (ja) ウエーハの加工方法
JP6906845B2 (ja) 被加工物の加工方法
JP2017041604A (ja) 光デバイスウエーハの加工方法
JP6529414B2 (ja) ウエーハの加工方法
JP6608746B2 (ja) ウエーハの加工方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200602

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210525

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210719

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211005

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211029

R150 Certificate of patent or registration of utility model

Ref document number: 6970554

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150