JP6970554B2 - 加工方法 - Google Patents
加工方法 Download PDFInfo
- Publication number
- JP6970554B2 JP6970554B2 JP2017158723A JP2017158723A JP6970554B2 JP 6970554 B2 JP6970554 B2 JP 6970554B2 JP 2017158723 A JP2017158723 A JP 2017158723A JP 2017158723 A JP2017158723 A JP 2017158723A JP 6970554 B2 JP6970554 B2 JP 6970554B2
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- JP
- Japan
- Prior art keywords
- workpiece
- work piece
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- holding table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title claims description 13
- 238000005520 cutting process Methods 0.000 claims description 73
- 238000003754 machining Methods 0.000 claims description 40
- 239000011148 porous material Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 16
- 230000003028 elevating effect Effects 0.000 description 14
- 230000001678 irradiating effect Effects 0.000 description 8
- 230000004075 alteration Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Removal Of Specific Substances (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017158723A JP6970554B2 (ja) | 2017-08-21 | 2017-08-21 | 加工方法 |
KR1020180090322A KR102524259B1 (ko) | 2017-08-21 | 2018-08-02 | 가공 방법 |
CN201810921439.6A CN109421179B (zh) | 2017-08-21 | 2018-08-14 | 加工方法 |
TW107128938A TWI774828B (zh) | 2017-08-21 | 2018-08-20 | 加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017158723A JP6970554B2 (ja) | 2017-08-21 | 2017-08-21 | 加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019034391A JP2019034391A (ja) | 2019-03-07 |
JP6970554B2 true JP6970554B2 (ja) | 2021-11-24 |
Family
ID=65513734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017158723A Active JP6970554B2 (ja) | 2017-08-21 | 2017-08-21 | 加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6970554B2 (zh) |
KR (1) | KR102524259B1 (zh) |
CN (1) | CN109421179B (zh) |
TW (1) | TWI774828B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112975653A (zh) * | 2021-02-05 | 2021-06-18 | 何宽 | 一种用于椭圆环形光学玻璃的加工装置 |
KR102654348B1 (ko) * | 2022-04-07 | 2024-04-04 | (주)이오테크닉스 | 홈 형성 장치 및 홈 형성 방법 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07110455B2 (ja) * | 1992-10-27 | 1995-11-29 | 住友電気工業株式会社 | ウェハ固定装置 |
US5445559A (en) * | 1993-06-24 | 1995-08-29 | Texas Instruments Incorporated | Wafer-like processing after sawing DMDs |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
EP1579971B1 (en) * | 2002-11-22 | 2011-10-05 | Mitsuboshi Diamond Industrial Co., Ltd. | Method for dividing a substrate and a panel production method |
JP4846411B2 (ja) | 2006-03-30 | 2011-12-28 | 株式会社ディスコ | 半導体パッケージ用治具 |
JP2009148982A (ja) | 2007-12-20 | 2009-07-09 | Daitron Technology Co Ltd | ブレーキング装置 |
JP5758116B2 (ja) * | 2010-12-16 | 2015-08-05 | 株式会社ディスコ | 分割方法 |
JP5950502B2 (ja) * | 2011-03-23 | 2016-07-13 | 株式会社ディスコ | ウエーハの分割方法 |
JP2013038434A (ja) | 2012-09-13 | 2013-02-21 | Daitron Technology Co Ltd | ブレーキング装置 |
JP6043150B2 (ja) * | 2012-10-29 | 2016-12-14 | 三星ダイヤモンド工業株式会社 | 積層脆性材料基板のブレイク装置および積層脆性材料基板のブレイク方法 |
EP2762286B1 (en) * | 2013-01-31 | 2015-07-01 | ams AG | Dicing method |
JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP6325279B2 (ja) * | 2014-02-21 | 2018-05-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6430759B2 (ja) | 2014-09-24 | 2018-11-28 | 株式会社ディスコ | レーザー加工装置 |
JP2016082162A (ja) * | 2014-10-21 | 2016-05-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6407066B2 (ja) * | 2015-03-06 | 2018-10-17 | 株式会社ディスコ | 光デバイスチップの製造方法 |
JP2017054956A (ja) * | 2015-09-10 | 2017-03-16 | 株式会社ディスコ | 被加工物の支持治具 |
JP2017135232A (ja) * | 2016-01-27 | 2017-08-03 | 株式会社ディスコ | 分割治具およびウエーハの分割方法 |
JP6556066B2 (ja) | 2016-02-09 | 2019-08-07 | 株式会社ディスコ | 切削装置 |
JP6316395B2 (ja) * | 2016-12-16 | 2018-04-25 | 三星ダイヤモンド工業株式会社 | 積層セラミックス基板のスクライブ装置 |
-
2017
- 2017-08-21 JP JP2017158723A patent/JP6970554B2/ja active Active
-
2018
- 2018-08-02 KR KR1020180090322A patent/KR102524259B1/ko active IP Right Grant
- 2018-08-14 CN CN201810921439.6A patent/CN109421179B/zh active Active
- 2018-08-20 TW TW107128938A patent/TWI774828B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102524259B1 (ko) | 2023-04-20 |
TW201912282A (zh) | 2019-04-01 |
KR20190020615A (ko) | 2019-03-04 |
CN109421179B (zh) | 2022-03-01 |
TWI774828B (zh) | 2022-08-21 |
JP2019034391A (ja) | 2019-03-07 |
CN109421179A (zh) | 2019-03-05 |
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