JP2020035873A - SiC基板の加工方法 - Google Patents
SiC基板の加工方法 Download PDFInfo
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- JP2020035873A JP2020035873A JP2018160620A JP2018160620A JP2020035873A JP 2020035873 A JP2020035873 A JP 2020035873A JP 2018160620 A JP2018160620 A JP 2018160620A JP 2018160620 A JP2018160620 A JP 2018160620A JP 2020035873 A JP2020035873 A JP 2020035873A
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- 239000000758 substrate Substances 0.000 title claims abstract description 241
- 238000003672 processing method Methods 0.000 title claims abstract 4
- 238000000926 separation method Methods 0.000 claims abstract description 62
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 21
- 230000035699 permeability Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :80kHz
平均出力 :3.2W
パルス幅 :4ns
スポット径 :3μm
集光器の開口数(NA) :0.43
インデックス量 :250〜400μm
送り速度 :120〜260mm/s
パルスレーザー光線の波長 :355nm
繰り返し周波数 :80kHz
平均出力 :1.5W
パルス幅 :4ns
スポット径 :3μm
集光器の開口数(NA) :0.43
インデックス量 :100μm
送り速度 :240mm/s
2a:SiC基板の表面
2b:SiC基板の裏面
6a:第一のサブストレート
6b:第二のサブストレート
22:分離層
30a:第一のSiC基板
30b:第二のSiC基板
32a:第一のSiC基板の分離面
32b:第二のSiC基板の分離面
52:デバイス
Claims (3)
- 1枚のSiC基板から少なくとも2枚のSiC基板を生成するSiC基板の加工方法であって、
SiCに対して透過性を有する波長のレーザー光線の集光点をSiC基板の内部に位置づけてレーザー光線をSiC基板に照射して分離層を形成する分離層形成工程と、
SiC基板の表面に第一のサブストレートを貼着する第一のサブストレート貼着工程と、
SiC基板の裏面に第二のサブストレートを貼着する第二のサブストレート貼着工程と、
該第一のサブストレート貼着工程と該第二のサブストレート貼着工程の後、該分離層に外力を付与してSiC基板を第一のSiC基板と第二のSiC基板とに分離する分離工程と、
から少なくとも構成されるSiC基板の加工方法。 - 該第一のサブストレートに貼着された該第一のSiC基板の分離面および該第二のサブストレートに貼着された該第二のSiC基板の分離面を平坦に仕上げる平坦化工程と、
該第一のSiC基板の平坦に仕上げられた分離面および該第二のSiC基板の平坦に仕上げられた分離面にデバイスを形成するデバイス形成工程と、
を含む請求項1記載のSiC基板の加工方法。 - 該第一のSiC基板から該第一のサブストレートを除去すると共に、該第二のSiC基板から該第二のサブストレートを除去するサブストレート除去工程を含む請求項1又は2記載のSiC基板の加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018160620A JP7201367B2 (ja) | 2018-08-29 | 2018-08-29 | SiC基板の加工方法 |
CN201910733404.4A CN110875173A (zh) | 2018-08-29 | 2019-08-09 | SiC基板的加工方法 |
US16/547,044 US10930561B2 (en) | 2018-08-29 | 2019-08-21 | SiC substrate processing method |
DE102019212927.7A DE102019212927A1 (de) | 2018-08-29 | 2019-08-28 | Bearbeitungsverfahren für ein sic-substrat |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018160620A JP7201367B2 (ja) | 2018-08-29 | 2018-08-29 | SiC基板の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020035873A true JP2020035873A (ja) | 2020-03-05 |
JP7201367B2 JP7201367B2 (ja) | 2023-01-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2018160620A Active JP7201367B2 (ja) | 2018-08-29 | 2018-08-29 | SiC基板の加工方法 |
Country Status (4)
Country | Link |
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US (1) | US10930561B2 (ja) |
JP (1) | JP7201367B2 (ja) |
CN (1) | CN110875173A (ja) |
DE (1) | DE102019212927A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7166893B2 (ja) * | 2018-11-21 | 2022-11-08 | 株式会社ディスコ | ウエーハの生成方法 |
JP7330771B2 (ja) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016035965A (ja) * | 2014-08-01 | 2016-03-17 | リンテック株式会社 | 板状部材の分割装置および板状部材の分割方法 |
JP2017057103A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社ディスコ | 窒化ガリウム基板の生成方法 |
JP2017092314A (ja) * | 2015-11-12 | 2017-05-25 | 株式会社ディスコ | SiC基板の分離方法 |
JP2018125390A (ja) * | 2017-01-31 | 2018-08-09 | 株式会社ディスコ | ウエーハ生成方法 |
Family Cites Families (4)
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JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
DE102010030358B4 (de) * | 2010-06-22 | 2014-05-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Abtrennen einer Substratscheibe |
JP6390898B2 (ja) * | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | 基板の製造方法、加工対象物の切断方法、及び、レーザ加工装置 |
US10364510B2 (en) * | 2015-11-25 | 2019-07-30 | Sciocs Company Limited | Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape |
-
2018
- 2018-08-29 JP JP2018160620A patent/JP7201367B2/ja active Active
-
2019
- 2019-08-09 CN CN201910733404.4A patent/CN110875173A/zh active Pending
- 2019-08-21 US US16/547,044 patent/US10930561B2/en active Active
- 2019-08-28 DE DE102019212927.7A patent/DE102019212927A1/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016035965A (ja) * | 2014-08-01 | 2016-03-17 | リンテック株式会社 | 板状部材の分割装置および板状部材の分割方法 |
JP2017057103A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社ディスコ | 窒化ガリウム基板の生成方法 |
JP2017092314A (ja) * | 2015-11-12 | 2017-05-25 | 株式会社ディスコ | SiC基板の分離方法 |
JP2018125390A (ja) * | 2017-01-31 | 2018-08-09 | 株式会社ディスコ | ウエーハ生成方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11219966B1 (en) | 2018-12-29 | 2022-01-11 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11826846B2 (en) | 2018-12-29 | 2023-11-28 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11901181B2 (en) | 2018-12-29 | 2024-02-13 | Wolfspeed, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US11911842B2 (en) | 2018-12-29 | 2024-02-27 | Wolfspeed, Inc. | Laser-assisted method for parting crystalline material |
US11034056B2 (en) | 2019-05-17 | 2021-06-15 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11654596B2 (en) | 2019-05-17 | 2023-05-23 | Wolfspeed, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
Also Published As
Publication number | Publication date |
---|---|
US10930561B2 (en) | 2021-02-23 |
CN110875173A (zh) | 2020-03-10 |
US20200075415A1 (en) | 2020-03-05 |
DE102019212927A1 (de) | 2020-03-05 |
JP7201367B2 (ja) | 2023-01-10 |
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