JP2019212761A - 面取り加工方法 - Google Patents
面取り加工方法 Download PDFInfo
- Publication number
- JP2019212761A JP2019212761A JP2018107872A JP2018107872A JP2019212761A JP 2019212761 A JP2019212761 A JP 2019212761A JP 2018107872 A JP2018107872 A JP 2018107872A JP 2018107872 A JP2018107872 A JP 2018107872A JP 2019212761 A JP2019212761 A JP 2019212761A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- outer periphery
- laser beam
- chamfering
- roughing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000002679 ablation Methods 0.000 claims abstract description 16
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000007730 finishing process Methods 0.000 claims description 36
- 235000012431 wafers Nutrition 0.000 description 79
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
Abstract
Description
パルスレーザー光線の波長 :1064nm
平均出力 :5.0W
繰り返し周波数 :10kHz
パルス幅 :100ns
焦点距離 :100mm
チャックテーブルの回転速度 :12度/秒
加工時間 :30秒×2回(第一・第二の粗加工工程)=1分
ダイヤモンド砥粒 :0.5〜2.0μm(25重量%)
結合材 :メタルボンド(75重量%)
形状 :直径60mm、厚み10mm
先端傾斜角度 :45度
研削ホイールの回転速度 :20000rpm
チャックテーブルの回転速度 :2度/秒
加工時間 :3分×2回(第一・第二の仕上げ加工工程)=6分
4:第一の面
6:第二の面
30:研削砥石
LB:レーザー光線
Claims (3)
- ウエーハの外周を面取りする面取り加工方法であって、
ウエーハの外周にレーザー光線の集光点を位置づけてレーザー光線を照射しアブレーションによって大まかに面取り加工を施す粗加工工程と、
アブレーション加工されたウエーハの外周を研削砥石で研削して仕上げ加工を施す仕上げ加工工程と、
から少なくとも構成される面取り加工方法。 - 該粗加工工程は、ウエーハの第一の面側からウエーハの外周にレーザー光線の集光点を位置づけてレーザー光線を照射しアブレーションによって大まかに面取り加工を施す第一の粗加工工程と、ウエーハの第二の面側からウエーハの外周にレーザー光線の集光点を位置づけてレーザー光線を照射しアブレーションによって大まかに面取り加工を施す第二の粗加工工程と、を含み、
該仕上げ加工工程は、ウエーハの第一の面側からウエーハの外周を研削砥石で研削して仕上げ加工を施す第一の仕上げ加工工程と、ウエーハの第二の面側からウエーハの外周を研削砥石で研削して仕上げ加工を施す第二の仕上げ加工工程と、を含む請求項1記載の面取り加工方法。 - ウエーハはSiCウエーハである請求項1又は2記載の面取り加工方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018107872A JP7166794B2 (ja) | 2018-06-05 | 2018-06-05 | 面取り加工方法 |
CN201910449323.1A CN110571131B (zh) | 2018-06-05 | 2019-05-28 | 倒角加工方法 |
TW108118395A TWI793331B (zh) | 2018-06-05 | 2019-05-28 | 倒角加工方法 |
KR1020190064756A KR20190138590A (ko) | 2018-06-05 | 2019-05-31 | 모따기 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018107872A JP7166794B2 (ja) | 2018-06-05 | 2018-06-05 | 面取り加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019212761A true JP2019212761A (ja) | 2019-12-12 |
JP7166794B2 JP7166794B2 (ja) | 2022-11-08 |
Family
ID=68773469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018107872A Active JP7166794B2 (ja) | 2018-06-05 | 2018-06-05 | 面取り加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7166794B2 (ja) |
KR (1) | KR20190138590A (ja) |
CN (1) | CN110571131B (ja) |
TW (1) | TWI793331B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220072680A1 (en) * | 2020-09-07 | 2022-03-10 | Disco Corporation | As-sliced wafer processing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102556907B1 (ko) | 2022-11-24 | 2023-07-19 | 주식회사 정성테크 | 양면 모따기 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) * | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
WO2009157319A1 (ja) * | 2008-06-25 | 2009-12-30 | 三星ダイヤモンド工業株式会社 | 面取り加工装置 |
JP2012101327A (ja) * | 2010-11-11 | 2012-05-31 | Sumco Techxiv株式会社 | ウェーハの面取り方法 |
JP2014229843A (ja) * | 2013-05-24 | 2014-12-08 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US20180057390A1 (en) * | 2015-03-24 | 2018-03-01 | Corning Incorporated | Laser cutting and processing of display glass compositions |
JP2018056347A (ja) * | 2016-09-29 | 2018-04-05 | 株式会社ディスコ | ウエーハ生成方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000094221A (ja) | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | 放電式ワイヤソー |
JP5926527B2 (ja) * | 2011-10-17 | 2016-05-25 | 信越化学工業株式会社 | 透明soiウェーハの製造方法 |
JP6399913B2 (ja) | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | ウエーハの生成方法 |
-
2018
- 2018-06-05 JP JP2018107872A patent/JP7166794B2/ja active Active
-
2019
- 2019-05-28 TW TW108118395A patent/TWI793331B/zh active
- 2019-05-28 CN CN201910449323.1A patent/CN110571131B/zh active Active
- 2019-05-31 KR KR1020190064756A patent/KR20190138590A/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111606A (ja) * | 2002-09-18 | 2004-04-08 | Tokyo Seimitsu Co Ltd | ウェーハの加工方法 |
WO2009157319A1 (ja) * | 2008-06-25 | 2009-12-30 | 三星ダイヤモンド工業株式会社 | 面取り加工装置 |
JP2012101327A (ja) * | 2010-11-11 | 2012-05-31 | Sumco Techxiv株式会社 | ウェーハの面取り方法 |
JP2014229843A (ja) * | 2013-05-24 | 2014-12-08 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US20180057390A1 (en) * | 2015-03-24 | 2018-03-01 | Corning Incorporated | Laser cutting and processing of display glass compositions |
JP2018056347A (ja) * | 2016-09-29 | 2018-04-05 | 株式会社ディスコ | ウエーハ生成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220072680A1 (en) * | 2020-09-07 | 2022-03-10 | Disco Corporation | As-sliced wafer processing method |
US11878387B2 (en) * | 2020-09-07 | 2024-01-23 | Disco Corporation | As-sliced wafer processing method |
Also Published As
Publication number | Publication date |
---|---|
KR20190138590A (ko) | 2019-12-13 |
CN110571131A (zh) | 2019-12-13 |
TW202003141A (zh) | 2020-01-16 |
JP7166794B2 (ja) | 2022-11-08 |
TWI793331B (zh) | 2023-02-21 |
CN110571131B (zh) | 2024-02-20 |
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