JP6969935B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 59
- 239000011800 void material Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000460 chlorine Substances 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000011534 incubation Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000003860 storage Methods 0.000 description 13
- 238000001020 plasma etching Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000002401 inhibitory effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
Description
図2は、メモリセルアレイ1の模式平面図である。
図3は、図2におけるA−A’断面図である。
図4(a)は、積層体100において図4(b)の部分よりも上方の一部分の拡大図である。
Claims (8)
- 複数の柱状の凸部と、前記凸部の下方に形成されたボイドとを含むシリコン基板と、
前記シリコン基板上に設けられ、絶縁体を介して積層された複数の電極層を有する積層体と、
前記積層体内を前記積層体の積層方向に延び、前記凸部に接する半導体ボディと、
を備え、
前記凸部の上端は、前記複数の電極層のうちの最下層の電極層と、下から2層目の電極層との間の高さに位置し、
前記シリコン基板は、下方領域と上方領域とを有し、
前記上方領域は、前記シリコン基板に形成されたホール内に位置し、
前記ホールは、底面と、前記底面に対して垂直な側面とを有し、
前記ボイドは、前記上方領域と前記下方領域との間に位置し、前記下方領域には接しておらず、
前記下方領域は、前記ホールの前記底面に接し、前記下方領域の不純物濃度は、前記上方領域の不純物濃度よりも高く、
前記ボイドの最大幅は、前記底面の幅よりも小さく、
前記凸部は、前記ホール内から成長したシリコン結晶である半導体装置。 - 前記不純物は炭素、塩素、窒素、酸素、弗素のいずれか1つ以上であり、前記下方領域の不純物濃度は、前記上方領域の不純物濃度よりも高い請求項1記載の半導体装置。
- 前記複数の凸部のうちの90%以上の凸部の下方に前記ボイドが形成されている請求項1または2に記載の半導体装置。
- シリコン基板の上面上に、交互に積層された第1層および第2層を含む複数の第1層および複数の第2層を有する積層体を形成し、
前記積層体を貫通し、前記シリコン基板の前記上面よりも深い位置にある底面と、前記底面に対して垂直な側面とをもつ複数のホールを形成し、
前記ホールに露出する前記シリコン基板の前記側面から選択的に成長させたシリコン結晶で、前記シリコン基板の前記上面よりも上方の位置で前記ホールを閉塞し、
前記ホール内に、前記積層体の積層方向に延び、前記シリコン結晶に接する半導体ボディを形成する半導体装置の製造方法。 - 前記ホールの前記底面からの前記シリコン結晶の成長レートは、前記側面からの前記シリコン結晶の成長レートよりも遅い請求項4記載の半導体装置の製造方法。
- 前記シリコン結晶の成長開始時における、前記ホールの前記底面から成長する前記シリコン結晶のインキュベーションタイムは、前記側面から成長する前記シリコン結晶のインキュベーションタイムよりも長い請求項4記載の半導体装置の製造方法。
- 前記シリコン結晶は、前記ホールの底面付近にボイドを形成しつつ、前記ホールを閉塞する請求項4〜6のいずれか1つに記載の半導体装置の製造方法。
- 前記ホールにおける前記シリコン基板の前記上面よりも下方の部分の深さは、前記ホールの直径よりも大きい請求項4記載の半導体装置の製造方法。
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KR102524808B1 (ko) | 2017-11-21 | 2023-04-24 | 삼성전자주식회사 | 반도체 소자 |
JP2019169503A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
US11678486B2 (en) | 2019-06-03 | 2023-06-13 | Macronix Iniernational Co., Ltd. | 3D flash memory with annular channel structure and array layout thereof |
JP7417387B2 (ja) * | 2019-09-05 | 2024-01-18 | キオクシア株式会社 | 半導体装置の製造方法 |
CN110800106B (zh) * | 2019-09-29 | 2021-01-29 | 长江存储科技有限责任公司 | 具有外延生长的半导体沟道的三维存储器件及其形成方法 |
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