JP2019041056A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2019041056A JP2019041056A JP2017163635A JP2017163635A JP2019041056A JP 2019041056 A JP2019041056 A JP 2019041056A JP 2017163635 A JP2017163635 A JP 2017163635A JP 2017163635 A JP2017163635 A JP 2017163635A JP 2019041056 A JP2019041056 A JP 2019041056A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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Abstract
Description
図2は、メモリセルアレイ1の模式平面図である。
図3は、図2におけるA−A’断面図である。
図4(a)は、積層体100において図4(b)の部分よりも上方の一部分の拡大図である。
Claims (10)
- 複数の柱状の凸部と、前記凸部の下方に形成されたボイドとを含む基板と、
前記基板上に設けられ、絶縁体を介して積層された複数の電極層を有する積層体と、
前記積層体内を前記積層体の積層方向に延び、前記凸部に接する半導体ボディと、
を備え、
前記凸部の上端は、前記複数の電極層のうちの最下層の電極層と、下から2層目の電極層との間の高さに位置する半導体装置。 - 前記基板はシリコン基板であり、
前記基板中における前記ボイドの下方領域の不純物濃度と、前記ボイドの上方領域の不純物濃度とは異なる請求項1記載の半導体装置。 - 前記不純物は炭素、塩素、窒素、酸素、弗素のいずれか1つ以上であり、前記下方領域の不純物濃度は、前記上方領域の不純物濃度よりも高い請求項2記載の半導体装置。
- 前記基板中における前記ボイドの下方に、前記基板とは異なる材料の膜が設けられている請求項1記載の半導体装置。
- 前記複数の凸部のうちの90%以上の凸部の下方に前記ボイドが形成されている請求項1〜4のいずれか1つに記載の半導体装置。
- 基板の上面上に、交互に積層された第1層および第2層を含む複数の第1層および複数の第2層を有する積層体を形成し、
前記積層体を貫通し、前記基板の前記上面よりも深い位置に底面をもつ複数のホールを形成し、
前記ホールに露出する前記基板の側壁から選択的に成長させた半導体材料で、前記基板の前記上面よりも上方の位置で前記ホールを閉塞し、
前記ホール内に、前記積層体の積層方向に延び、前記半導体材料に接する半導体ボディを形成する半導体装置の製造方法。 - 前記ホールの前記底面からの前記半導体材料の成長レートは、前記基板の前記側壁からの前記半導体材料の成長レートよりも遅い請求項6記載の半導体装置の製造方法。
- 前記半導体材料の成長開始時における、前記ホールの前記底面から成長する前記半導体材料のインキュベーションタイムは、前記基板の前記側壁から成長する前記半導体材料のインキュベーションタイムよりも長い請求項6記載の半導体装置の製造方法。
- 前記半導体材料は、前記ホールの底面付近にボイドを形成しつつ、前記ホールを閉塞する請求項6〜8のいずれか1つに記載の半導体装置の製造方法。
- 前記ホールにおける前記基板の前記上面よりも下方の部分の深さは、前記ホールの直径よりも大きい請求項6記載の半導体装置の製造方法。
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US15/915,533 US10868030B2 (en) | 2017-08-28 | 2018-03-08 | Semiconductor device and method for manufacturing same |
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KR102524808B1 (ko) * | 2017-11-21 | 2023-04-24 | 삼성전자주식회사 | 반도체 소자 |
JP2019169503A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
US11678486B2 (en) | 2019-06-03 | 2023-06-13 | Macronix Iniernational Co., Ltd. | 3D flash memory with annular channel structure and array layout thereof |
CN112635479B (zh) * | 2019-09-29 | 2023-09-19 | 长江存储科技有限责任公司 | 具有外延生长的半导体沟道的三维存储器件及其形成方法 |
JP2022139973A (ja) * | 2021-03-12 | 2022-09-26 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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US7732891B2 (en) * | 2008-06-03 | 2010-06-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
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US9076879B2 (en) | 2012-09-11 | 2015-07-07 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory device and method for fabricating the same |
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US11075122B2 (en) | 2019-09-05 | 2021-07-27 | Kioxia Corporation | Semiconductor device and manufacturing method thereof |
JP7417387B2 (ja) | 2019-09-05 | 2024-01-18 | キオクシア株式会社 | 半導体装置の製造方法 |
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US10868030B2 (en) | 2020-12-15 |
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