JP6967411B2 - 半導体製造装置、半導体装置の製造方法およびコレット - Google Patents

半導体製造装置、半導体装置の製造方法およびコレット Download PDF

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JP6967411B2
JP6967411B2 JP2017178987A JP2017178987A JP6967411B2 JP 6967411 B2 JP6967411 B2 JP 6967411B2 JP 2017178987 A JP2017178987 A JP 2017178987A JP 2017178987 A JP2017178987 A JP 2017178987A JP 6967411 B2 JP6967411 B2 JP 6967411B2
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JP2019054209A5 (enExample
JP2019054209A (ja
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明 齊藤
直樹 岡本
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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Priority to JP2017178987A priority Critical patent/JP6967411B2/ja
Priority to KR1020180100186A priority patent/KR102101760B1/ko
Priority to TW107129898A priority patent/TWI705524B/zh
Priority to CN201811085188.9A priority patent/CN109524313B/zh
Publication of JP2019054209A publication Critical patent/JP2019054209A/ja
Publication of JP2019054209A5 publication Critical patent/JP2019054209A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67121Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
JP2017178987A 2017-09-19 2017-09-19 半導体製造装置、半導体装置の製造方法およびコレット Active JP6967411B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017178987A JP6967411B2 (ja) 2017-09-19 2017-09-19 半導体製造装置、半導体装置の製造方法およびコレット
KR1020180100186A KR102101760B1 (ko) 2017-09-19 2018-08-27 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿
TW107129898A TWI705524B (zh) 2017-09-19 2018-08-28 半導體製造裝置、半導體裝置之製造方法及夾頭
CN201811085188.9A CN109524313B (zh) 2017-09-19 2018-09-17 半导体制造装置、半导体器件的制造方法及筒夹

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017178987A JP6967411B2 (ja) 2017-09-19 2017-09-19 半導体製造装置、半導体装置の製造方法およびコレット

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JP2019054209A JP2019054209A (ja) 2019-04-04
JP2019054209A5 JP2019054209A5 (enExample) 2020-09-03
JP6967411B2 true JP6967411B2 (ja) 2021-11-17

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JP (1) JP6967411B2 (enExample)
KR (1) KR102101760B1 (enExample)
CN (1) CN109524313B (enExample)
TW (1) TWI705524B (enExample)

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* Cited by examiner, † Cited by third party
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JP7377654B2 (ja) * 2019-09-17 2023-11-10 ファスフォードテクノロジ株式会社 ダイボンディング装置、剥離ユニット、コレットおよび半導体装置の製造方法
JP7343402B2 (ja) * 2020-01-08 2023-09-12 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法およびエキスパンド装置
JP7412219B2 (ja) * 2020-02-25 2024-01-12 ファスフォードテクノロジ株式会社 ダイボンディング装置、半導体装置の製造方法および剥離装置
JP7488062B2 (ja) * 2020-03-02 2024-05-21 東京エレクトロン株式会社 接合装置、接合システム、接合方法および記憶媒体
TW202347464A (zh) * 2020-03-23 2023-12-01 日商捷進科技有限公司 晶片接合裝置、剝離治具及半導體裝置的製造方法
KR102405424B1 (ko) * 2020-06-25 2022-06-07 한화정밀기계 주식회사 웨이퍼 스테이지 장치
KR102819884B1 (ko) * 2020-07-20 2025-06-12 한화세미텍 주식회사 다이 박리 장치 및 이를 이용한 다이 박리 방법
WO2022123645A1 (ja) * 2020-12-08 2022-06-16 株式会社新川 半導体ダイのピックアップ装置

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JPH11274202A (ja) * 1998-03-24 1999-10-08 Fuji Xerox Co Ltd バンプ形成装置およびバンプ形成に使用されるチップトレイ
JP3848606B2 (ja) * 2002-08-26 2006-11-22 日東電工株式会社 コレットおよびそれを用いてチップ部品をピックアップする方法
JP4405211B2 (ja) * 2003-09-08 2010-01-27 パナソニック株式会社 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置
JP4574251B2 (ja) * 2003-09-17 2010-11-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JPWO2005029574A1 (ja) * 2003-09-18 2006-11-30 キヤノンマシナリー株式会社 コレット、ダイボンダおよびチップのピックアップ方法
JP2005322815A (ja) * 2004-05-11 2005-11-17 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
TWI463580B (zh) * 2007-06-19 2014-12-01 瑞薩科技股份有限公司 Manufacturing method of semiconductor integrated circuit device
JP4945339B2 (ja) * 2007-06-22 2012-06-06 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4864816B2 (ja) * 2007-06-19 2012-02-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
KR20120002556A (ko) * 2007-10-09 2012-01-05 히다치 가세고교 가부시끼가이샤 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법
JP2010129588A (ja) * 2008-11-25 2010-06-10 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4397429B1 (ja) * 2009-03-05 2010-01-13 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
JP5123357B2 (ja) * 2010-06-17 2013-01-23 株式会社日立ハイテクインスツルメンツ ダイボンダ及びピックアップ装置
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JP2013165230A (ja) * 2012-02-13 2013-08-22 Elpida Memory Inc 吸着コレット及び半導体装置の製造方法
JP2013214683A (ja) * 2012-04-04 2013-10-17 Mitsubishi Electric Corp 半導体チップのピックアップ装置
JP2014179561A (ja) * 2013-03-15 2014-09-25 Hitachi High-Tech Instruments Co Ltd ボンディングヘッドとそれを備えたダイボンダ
JP5647308B2 (ja) * 2013-08-02 2014-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2015076410A (ja) 2013-10-04 2015-04-20 株式会社日立ハイテクインスツルメンツ ボンディング方法及びダイボンダ
JP6400938B2 (ja) * 2014-04-30 2018-10-03 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
JP5888455B1 (ja) * 2015-04-01 2016-03-22 富士ゼロックス株式会社 半導体製造装置および半導体片の製造方法
JP6573813B2 (ja) * 2015-09-30 2019-09-11 ファスフォードテクノロジ株式会社 ダイボンダおよび半導体装置の製造方法

Also Published As

Publication number Publication date
TWI705524B (zh) 2020-09-21
JP2019054209A (ja) 2019-04-04
CN109524313B (zh) 2022-12-30
KR102101760B1 (ko) 2020-04-20
TW201923963A (zh) 2019-06-16
CN109524313A (zh) 2019-03-26
KR20190032180A (ko) 2019-03-27

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