KR102101760B1 - 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 - Google Patents
반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 Download PDFInfo
- Publication number
- KR102101760B1 KR102101760B1 KR1020180100186A KR20180100186A KR102101760B1 KR 102101760 B1 KR102101760 B1 KR 102101760B1 KR 1020180100186 A KR1020180100186 A KR 1020180100186A KR 20180100186 A KR20180100186 A KR 20180100186A KR 102101760 B1 KR102101760 B1 KR 102101760B1
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- Prior art keywords
- block
- collet
- die
- suction hole
- dicing tape
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
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- 238000001179 sorption measurement Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 10
- 238000005452 bending Methods 0.000 description 6
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- 238000003384 imaging method Methods 0.000 description 2
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- 238000012544 monitoring process Methods 0.000 description 2
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical class C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical class N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical class O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
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- 229920001971 elastomer Polymers 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2017-178987 | 2017-09-19 | ||
| JP2017178987A JP6967411B2 (ja) | 2017-09-19 | 2017-09-19 | 半導体製造装置、半導体装置の製造方法およびコレット |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190032180A KR20190032180A (ko) | 2019-03-27 |
| KR102101760B1 true KR102101760B1 (ko) | 2020-04-20 |
Family
ID=65771255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180100186A Active KR102101760B1 (ko) | 2017-09-19 | 2018-08-27 | 반도체 제조 장치, 반도체 장치의 제조 방법 및 콜릿 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6967411B2 (enExample) |
| KR (1) | KR102101760B1 (enExample) |
| CN (1) | CN109524313B (enExample) |
| TW (1) | TWI705524B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7377654B2 (ja) * | 2019-09-17 | 2023-11-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置、剥離ユニット、コレットおよび半導体装置の製造方法 |
| JP7343402B2 (ja) * | 2020-01-08 | 2023-09-12 | ファスフォードテクノロジ株式会社 | ダイボンディング装置、半導体装置の製造方法およびエキスパンド装置 |
| JP7412219B2 (ja) * | 2020-02-25 | 2024-01-12 | ファスフォードテクノロジ株式会社 | ダイボンディング装置、半導体装置の製造方法および剥離装置 |
| JP7488062B2 (ja) * | 2020-03-02 | 2024-05-21 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法および記憶媒体 |
| TWI810522B (zh) * | 2020-03-23 | 2023-08-01 | 日商捷進科技有限公司 | 晶片接合裝置、剝離治具及半導體裝置的製造方法 |
| KR102405424B1 (ko) * | 2020-06-25 | 2022-06-07 | 한화정밀기계 주식회사 | 웨이퍼 스테이지 장치 |
| KR102819884B1 (ko) * | 2020-07-20 | 2025-06-12 | 한화세미텍 주식회사 | 다이 박리 장치 및 이를 이용한 다이 박리 방법 |
| KR102866416B1 (ko) * | 2020-12-08 | 2025-09-29 | 가부시키가이샤 신가와 | 반도체 다이의 픽업 장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065628A (ja) | 2011-09-15 | 2013-04-11 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ並びにダイピックアップ装置及びダイピックアップ方法 |
| JP2013219403A (ja) | 2013-08-02 | 2013-10-24 | Renesas Electronics Corp | 半導体集積回路装置の製造方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11274202A (ja) * | 1998-03-24 | 1999-10-08 | Fuji Xerox Co Ltd | バンプ形成装置およびバンプ形成に使用されるチップトレイ |
| JP3848606B2 (ja) * | 2002-08-26 | 2006-11-22 | 日東電工株式会社 | コレットおよびそれを用いてチップ部品をピックアップする方法 |
| JP4405211B2 (ja) * | 2003-09-08 | 2010-01-27 | パナソニック株式会社 | 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置 |
| JP4574251B2 (ja) * | 2003-09-17 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| AU2003266534A1 (en) * | 2003-09-18 | 2005-04-11 | Nec Machinery Corporation | Collet, die bonder, and chip pick-up method |
| JP2005322815A (ja) * | 2004-05-11 | 2005-11-17 | Matsushita Electric Ind Co Ltd | 半導体製造装置および半導体装置の製造方法 |
| JP4864816B2 (ja) * | 2007-06-19 | 2012-02-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| TWI463580B (zh) * | 2007-06-19 | 2014-12-01 | 瑞薩科技股份有限公司 | Manufacturing method of semiconductor integrated circuit device |
| JP4945339B2 (ja) * | 2007-06-22 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| KR20100065185A (ko) * | 2007-10-09 | 2010-06-15 | 히다치 가세고교 가부시끼가이샤 | 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법 |
| JP2010129588A (ja) * | 2008-11-25 | 2010-06-10 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP4397429B1 (ja) * | 2009-03-05 | 2010-01-13 | 株式会社新川 | 半導体ダイのピックアップ装置及びピックアップ方法 |
| JP5123357B2 (ja) * | 2010-06-17 | 2013-01-23 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ及びピックアップ装置 |
| JP5777202B2 (ja) * | 2011-02-14 | 2015-09-09 | 富士機械製造株式会社 | ダイピックアップ装置 |
| JP5805411B2 (ja) * | 2011-03-23 | 2015-11-04 | ファスフォードテクノロジ株式会社 | ダイボンダのピックアップ方法およびダイボンダ |
| JP2012248778A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ及びボンディング方法 |
| JP2013165230A (ja) * | 2012-02-13 | 2013-08-22 | Elpida Memory Inc | 吸着コレット及び半導体装置の製造方法 |
| JP2013214683A (ja) * | 2012-04-04 | 2013-10-17 | Mitsubishi Electric Corp | 半導体チップのピックアップ装置 |
| JP2014179561A (ja) * | 2013-03-15 | 2014-09-25 | Hitachi High-Tech Instruments Co Ltd | ボンディングヘッドとそれを備えたダイボンダ |
| JP2015076410A (ja) | 2013-10-04 | 2015-04-20 | 株式会社日立ハイテクインスツルメンツ | ボンディング方法及びダイボンダ |
| JP6400938B2 (ja) * | 2014-04-30 | 2018-10-03 | ファスフォードテクノロジ株式会社 | ダイボンダ及びボンディング方法 |
| JP5888455B1 (ja) * | 2015-04-01 | 2016-03-22 | 富士ゼロックス株式会社 | 半導体製造装置および半導体片の製造方法 |
| JP6573813B2 (ja) * | 2015-09-30 | 2019-09-11 | ファスフォードテクノロジ株式会社 | ダイボンダおよび半導体装置の製造方法 |
-
2017
- 2017-09-19 JP JP2017178987A patent/JP6967411B2/ja active Active
-
2018
- 2018-08-27 KR KR1020180100186A patent/KR102101760B1/ko active Active
- 2018-08-28 TW TW107129898A patent/TWI705524B/zh active
- 2018-09-17 CN CN201811085188.9A patent/CN109524313B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065628A (ja) | 2011-09-15 | 2013-04-11 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ並びにダイピックアップ装置及びダイピックアップ方法 |
| JP2013219403A (ja) | 2013-08-02 | 2013-10-24 | Renesas Electronics Corp | 半導体集積回路装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019054209A (ja) | 2019-04-04 |
| TWI705524B (zh) | 2020-09-21 |
| JP6967411B2 (ja) | 2021-11-17 |
| KR20190032180A (ko) | 2019-03-27 |
| CN109524313B (zh) | 2022-12-30 |
| TW201923963A (zh) | 2019-06-16 |
| CN109524313A (zh) | 2019-03-26 |
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