JP6960813B2 - グラフェン構造体の形成方法および形成装置 - Google Patents
グラフェン構造体の形成方法および形成装置 Download PDFInfo
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- JP6960813B2 JP6960813B2 JP2017180049A JP2017180049A JP6960813B2 JP 6960813 B2 JP6960813 B2 JP 6960813B2 JP 2017180049 A JP2017180049 A JP 2017180049A JP 2017180049 A JP2017180049 A JP 2017180049A JP 6960813 B2 JP6960813 B2 JP 6960813B2
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- C01B32/182—Graphene
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- H01J37/32715—Workpiece holder
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02373—Group 14 semiconducting materials
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- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017180049A JP6960813B2 (ja) | 2017-09-20 | 2017-09-20 | グラフェン構造体の形成方法および形成装置 |
| KR1020180108838A KR102209666B1 (ko) | 2017-09-20 | 2018-09-12 | 그래핀 구조체의 형성 방법 및 형성 장치 |
| US16/131,458 US11091836B2 (en) | 2017-09-20 | 2018-09-14 | Graphene structure forming method and graphene structure forming apparatus |
| CN201811099667.6A CN109516453A (zh) | 2017-09-20 | 2018-09-20 | 石墨烯结构体的形成方法和形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017180049A JP6960813B2 (ja) | 2017-09-20 | 2017-09-20 | グラフェン構造体の形成方法および形成装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019055887A JP2019055887A (ja) | 2019-04-11 |
| JP2019055887A5 JP2019055887A5 (OSRAM) | 2020-08-13 |
| JP6960813B2 true JP6960813B2 (ja) | 2021-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2017180049A Active JP6960813B2 (ja) | 2017-09-20 | 2017-09-20 | グラフェン構造体の形成方法および形成装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11091836B2 (OSRAM) |
| JP (1) | JP6960813B2 (OSRAM) |
| KR (1) | KR102209666B1 (OSRAM) |
| CN (1) | CN109516453A (OSRAM) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5851804B2 (ja) * | 2011-11-09 | 2016-02-03 | 東京エレクトロン株式会社 | 前処理方法、グラフェンの形成方法及びグラフェン製造装置 |
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| Publication number | Publication date |
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| US11091836B2 (en) | 2021-08-17 |
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| JP2019055887A (ja) | 2019-04-11 |
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