JP6926450B2 - 撮像素子、積層型撮像素子及び固体撮像装置 - Google Patents

撮像素子、積層型撮像素子及び固体撮像装置 Download PDF

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Publication number
JP6926450B2
JP6926450B2 JP2016226658A JP2016226658A JP6926450B2 JP 6926450 B2 JP6926450 B2 JP 6926450B2 JP 2016226658 A JP2016226658 A JP 2016226658A JP 2016226658 A JP2016226658 A JP 2016226658A JP 6926450 B2 JP6926450 B2 JP 6926450B2
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photoelectric conversion
electrode
image pickup
charge storage
segment
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Japanese (ja)
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JP2018085402A (ja
JP2018085402A5 (https=
Inventor
明 古川
明 古川
良洋 安藤
良洋 安藤
秀晃 富樫
秀晃 富樫
史彦 古閑
史彦 古閑
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Sony Corp
Sony Group Corp
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Sony Corp
Sony Group Corp
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Priority to JP2016226658A priority Critical patent/JP6926450B2/ja
Priority to KR1020197013455A priority patent/KR102422857B1/ko
Priority to KR1020237016949A priority patent/KR102628546B1/ko
Priority to PCT/JP2017/040938 priority patent/WO2018096980A2/en
Priority to CN202211473759.2A priority patent/CN115881743A/zh
Priority to CN201780070841.1A priority patent/CN109983579B/zh
Priority to KR1020227023761A priority patent/KR102543263B1/ko
Priority to US16/349,361 priority patent/US11222912B2/en
Priority to TW111134629A priority patent/TWI876203B/zh
Priority to TW106139409A priority patent/TWI746697B/zh
Priority to TW110138480A priority patent/TWI782756B/zh
Publication of JP2018085402A publication Critical patent/JP2018085402A/ja
Publication of JP2018085402A5 publication Critical patent/JP2018085402A5/ja
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Publication of JP6926450B2 publication Critical patent/JP6926450B2/ja
Priority to US17/539,956 priority patent/US11901382B2/en
Priority to US18/523,054 priority patent/US12324262B2/en
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
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    • H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
    • H—ELECTRICITY
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    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
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    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
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    • H10F39/10—Integrated devices
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    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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    • H10F39/10—Integrated devices
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    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
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    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/80—Constructional details of image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
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    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
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    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
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JP2016226658A 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置 Active JP6926450B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP2016226658A JP6926450B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置
KR1020237016949A KR102628546B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
PCT/JP2017/040938 WO2018096980A2 (en) 2016-11-22 2017-11-14 Imaging element, stacked-type imaging element and solid-state imaging apparatus
CN202211473759.2A CN115881743A (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和摄像装置
CN201780070841.1A CN109983579B (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和固态摄像装置
KR1020227023761A KR102543263B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
US16/349,361 US11222912B2 (en) 2016-11-22 2017-11-14 Imaging element, stacked type imaging element and solid-state imaging apparatus
KR1020197013455A KR102422857B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
TW111134629A TWI876203B (zh) 2016-11-22 2017-11-15 成像元件，堆疊式成像元件及固態成像裝置
TW106139409A TWI746697B (zh) 2016-11-22 2017-11-15 成像元件，堆疊式成像元件及固態成像裝置
TW110138480A TWI782756B (zh) 2016-11-22 2017-11-15 成像元件，堆疊式成像元件及固態成像裝置
US17/539,956 US11901382B2 (en) 2016-11-22 2021-12-01 Imaging element, stacked-type imaging element and solid-state imaging apparatus
US18/523,054 US12324262B2 (en) 2016-11-22 2023-11-29 Imaging element, stacked-type imaging element and solid-state imaging apparatus

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JP2016226658A JP6926450B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置

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JP2018085402A JP2018085402A (ja) 2018-05-31
JP2018085402A5 JP2018085402A5 (https=) 2019-12-26
JP6926450B2 true JP6926450B2 (ja) 2021-08-25

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US (3) US11222912B2 (https=)
JP (1) JP6926450B2 (https=)
KR (3) KR102422857B1 (https=)
CN (2) CN115881743A (https=)
TW (3) TWI876203B (https=)
WO (1) WO2018096980A2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11538843B2 (en) * 2018-04-09 2022-12-27 Sony Semiconductor Solutions Corporation Imaging unit, method for manufacturing the same, and electronic apparatus
JP7248674B2 (ja) 2018-06-08 2023-03-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
TWI846699B (zh) * 2018-06-15 2024-07-01 日商索尼股份有限公司 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法
EP4391062A3 (en) * 2018-06-15 2024-09-11 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing same, and electronic apparatus
WO2020008801A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
WO2020008802A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
TWI840387B (zh) * 2018-07-26 2024-05-01 日商索尼股份有限公司 固態攝像元件、固態攝像裝置及固態攝像元件之讀出方法
TWI840383B (zh) 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
JP2020017688A (ja) * 2018-07-27 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
DE112019003868T5 (de) 2018-07-30 2021-04-22 Sony Semiconductor Solutions Corporation Festkörper-bildgebungselement und elektronische vorrichtung
US12063801B2 (en) 2018-07-31 2024-08-13 Sony Semiconductor Solutions Corporation Imaging element and imaging device including an organic semiconductor material
TW202035577A (zh) * 2018-09-06 2020-10-01 日商富士軟片股份有限公司 結構體、光感測器及圖像顯示裝置
US12376410B2 (en) * 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
WO2021085227A1 (ja) * 2019-11-01 2021-05-06 ソニー株式会社 光電変換素子および撮像素子
JP7531272B2 (ja) * 2019-11-15 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202145595A (zh) * 2020-01-14 2021-12-01 美商寬騰矽公司 用於壽命及光譜特性分析之感應器
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
JPWO2022130835A1 (https=) * 2020-12-15 2022-06-23
JP2022190538A (ja) * 2021-06-14 2022-12-26 株式会社ジャパンディスプレイ 検出装置
JP2023005880A (ja) * 2021-06-29 2023-01-18 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、および電子機器
TWI825846B (zh) * 2022-07-13 2023-12-11 力成科技股份有限公司 封裝結構及其製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
FR2597647B1 (fr) * 1986-04-18 1992-06-12 Thomson Csf Registre a decalage a transfert de charge muni d'un dispositif de lecture en tension sur diode flottante
JP2606225B2 (ja) * 1987-08-27 1997-04-30 セイコーエプソン株式会社 電荷結合素子
JPH0595100A (ja) 1991-08-13 1993-04-16 Fuji Xerox Co Ltd イメージセンサ
US7242449B1 (en) * 1999-07-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and integral image recognition/display apparatus
KR100745595B1 (ko) 2004-11-29 2007-08-02 삼성전자주식회사 이미지 센서의 마이크로 렌즈 및 그 형성 방법
JP2007258424A (ja) * 2006-03-23 2007-10-04 Seiko Epson Corp 固体撮像素子の製造方法及び固体撮像素子
JP2008021875A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
CN101170118B (zh) * 2006-10-25 2010-11-10 鸿富锦精密工业（深圳）有限公司 影像感测器封装、影像感测器模组及它们的制造方法
JP2008112907A (ja) * 2006-10-31 2008-05-15 Powerchip Semiconductor Corp イメージセンサー及びその製作方法
JP4961590B2 (ja) * 2007-04-13 2012-06-27 力晶科技股▲ふん▼有限公司 イメージセンサー及びその製作方法
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5534981B2 (ja) * 2010-06-30 2014-07-02 株式会社東芝 固体撮像装置
JP5909975B2 (ja) * 2011-10-06 2016-04-27 ソニー株式会社 撮像装置および電子機器
KR101774491B1 (ko) * 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
KR101861650B1 (ko) * 2011-10-17 2018-05-29 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법
JP2013157883A (ja) 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
JP5885608B2 (ja) * 2012-07-23 2016-03-15 株式会社東芝 固体撮像装置
JP6108172B2 (ja) * 2013-09-02 2017-04-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102355558B1 (ko) * 2014-07-31 2022-01-27 삼성전자주식회사 이미지 센서
JP2016039203A (ja) * 2014-08-06 2016-03-22 ソニー株式会社 機能性素子および電子機器
KR102441803B1 (ko) 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
US9515105B2 (en) 2015-02-18 2016-12-06 Semiconductor Components Industries, Llc Dual photodiode image pixels with preferential blooming path
JP6555468B2 (ja) * 2015-04-02 2019-08-07 パナソニックＩｐマネジメント株式会社 撮像装置
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

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