KR102422857B1 - 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 - Google Patents

촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 Download PDF

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KR102422857B1
KR102422857B1 KR1020197013455A KR20197013455A KR102422857B1 KR 102422857 B1 KR102422857 B1 KR 102422857B1 KR 1020197013455 A KR1020197013455 A KR 1020197013455A KR 20197013455 A KR20197013455 A KR 20197013455A KR 102422857 B1 KR102422857 B1 KR 102422857B1
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electrode
photoelectric conversion
imaging device
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layer
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KR20190084049A (ko
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아키라 후루카와
요시히로 안도
히데아키 토가시
후미히코 코가
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소니그룹주식회사
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
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    • H10F39/10—Integrated devices
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    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
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    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/80—Constructional details of image sensors
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    • H10H20/822—Materials of the light-emitting regions
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KR1020197013455A 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치 Active KR102422857B1 (ko)

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KR1020227023761A KR102543263B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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JP2016226658A JP6926450B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置
JPJP-P-2016-226658 2016-11-22
PCT/JP2017/040938 WO2018096980A2 (en) 2016-11-22 2017-11-14 Imaging element, stacked-type imaging element and solid-state imaging apparatus

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KR1020227023761A Division KR102543263B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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KR102422857B1 true KR102422857B1 (ko) 2022-07-20

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KR1020197013455A Active KR102422857B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
KR1020237016949A Active KR102628546B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
KR1020227023761A Active KR102543263B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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KR1020227023761A Active KR102543263B1 (ko) 2016-11-22 2017-11-14 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치

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US (3) US11222912B2 (https=)
JP (1) JP6926450B2 (https=)
KR (3) KR102422857B1 (https=)
CN (2) CN115881743A (https=)
TW (3) TWI876203B (https=)
WO (1) WO2018096980A2 (https=)

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JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11538843B2 (en) * 2018-04-09 2022-12-27 Sony Semiconductor Solutions Corporation Imaging unit, method for manufacturing the same, and electronic apparatus
JP7248674B2 (ja) 2018-06-08 2023-03-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
TWI846699B (zh) * 2018-06-15 2024-07-01 日商索尼股份有限公司 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法
EP4391062A3 (en) * 2018-06-15 2024-09-11 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing same, and electronic apparatus
WO2020008801A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
WO2020008802A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
TWI840387B (zh) * 2018-07-26 2024-05-01 日商索尼股份有限公司 固態攝像元件、固態攝像裝置及固態攝像元件之讀出方法
TWI840383B (zh) 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
JP2020017688A (ja) * 2018-07-27 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
DE112019003868T5 (de) 2018-07-30 2021-04-22 Sony Semiconductor Solutions Corporation Festkörper-bildgebungselement und elektronische vorrichtung
US12063801B2 (en) 2018-07-31 2024-08-13 Sony Semiconductor Solutions Corporation Imaging element and imaging device including an organic semiconductor material
TW202035577A (zh) * 2018-09-06 2020-10-01 日商富士軟片股份有限公司 結構體、光感測器及圖像顯示裝置
US12376410B2 (en) * 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
WO2021085227A1 (ja) * 2019-11-01 2021-05-06 ソニー株式会社 光電変換素子および撮像素子
JP7531272B2 (ja) * 2019-11-15 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202145595A (zh) * 2020-01-14 2021-12-01 美商寬騰矽公司 用於壽命及光譜特性分析之感應器
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
JPWO2022130835A1 (https=) * 2020-12-15 2022-06-23
JP2022190538A (ja) * 2021-06-14 2022-12-26 株式会社ジャパンディスプレイ 検出装置
JP2023005880A (ja) * 2021-06-29 2023-01-18 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、および電子機器
TWI825846B (zh) * 2022-07-13 2023-12-11 力成科技股份有限公司 封裝結構及其製造方法

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JP2008112907A (ja) 2006-10-31 2008-05-15 Powerchip Semiconductor Corp イメージセンサー及びその製作方法
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