CN115881743A - 摄像元件、层叠型摄像元件和摄像装置 - Google Patents

摄像元件、层叠型摄像元件和摄像装置 Download PDF

Info

Publication number
CN115881743A
CN115881743A CN202211473759.2A CN202211473759A CN115881743A CN 115881743 A CN115881743 A CN 115881743A CN 202211473759 A CN202211473759 A CN 202211473759A CN 115881743 A CN115881743 A CN 115881743A
Authority
CN
China
Prior art keywords
photoelectric conversion
electrode
image pickup
charge storage
conversion unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211473759.2A
Other languages
English (en)
Chinese (zh)
Inventor
古川明
安藤良洋
富樫秀晃
古闲史彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN115881743A publication Critical patent/CN115881743A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • A—HUMAN NECESSITIES
    • A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
    • A23B—PRESERVATION OF FOODS, FOODSTUFFS OR NON-ALCOHOLIC BEVERAGES; CHEMICAL RIPENING OF FRUIT OR VEGETABLES
    • A23B70/00—Preservation of non-alcoholic beverages
    • A23B70/20—Preservation of non-alcoholic beverages by cooling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/45—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Human Computer Interaction (AREA)
  • Food Science & Technology (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Zoology (AREA)
  • Wood Science & Technology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Memories (AREA)
CN202211473759.2A 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和摄像装置 Pending CN115881743A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-226658 2016-11-22
JP2016226658A JP6926450B2 (ja) 2016-11-22 2016-11-22 撮像素子、積層型撮像素子及び固体撮像装置
PCT/JP2017/040938 WO2018096980A2 (en) 2016-11-22 2017-11-14 Imaging element, stacked-type imaging element and solid-state imaging apparatus
CN201780070841.1A CN109983579B (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和固态摄像装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780070841.1A Division CN109983579B (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和固态摄像装置

Publications (1)

Publication Number Publication Date
CN115881743A true CN115881743A (zh) 2023-03-31

Family

ID=60574675

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202211473759.2A Pending CN115881743A (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和摄像装置
CN201780070841.1A Active CN109983579B (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和固态摄像装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201780070841.1A Active CN109983579B (zh) 2016-11-22 2017-11-14 摄像元件、层叠型摄像元件和固态摄像装置

Country Status (6)

Country Link
US (3) US11222912B2 (https=)
JP (1) JP6926450B2 (https=)
KR (3) KR102422857B1 (https=)
CN (2) CN115881743A (https=)
TW (3) TWI876203B (https=)
WO (1) WO2018096980A2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
US11538843B2 (en) * 2018-04-09 2022-12-27 Sony Semiconductor Solutions Corporation Imaging unit, method for manufacturing the same, and electronic apparatus
JP7248674B2 (ja) 2018-06-08 2023-03-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子、積層型撮像素子及び固体撮像装置
TWI846699B (zh) * 2018-06-15 2024-07-01 日商索尼股份有限公司 固體攝像元件、固體攝像裝置、電子機器及固體攝像元件之製造方法
EP4391062A3 (en) * 2018-06-15 2024-09-11 Sony Semiconductor Solutions Corporation Imaging device and method for manufacturing same, and electronic apparatus
WO2020008801A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び固体撮像装置
WO2020008802A1 (ja) * 2018-07-03 2020-01-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
TWI840387B (zh) * 2018-07-26 2024-05-01 日商索尼股份有限公司 固態攝像元件、固態攝像裝置及固態攝像元件之讀出方法
TWI840383B (zh) 2018-07-26 2024-05-01 日商索尼半導體解決方案公司 固體攝像裝置
JP2020017688A (ja) * 2018-07-27 2020-01-30 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器
DE112019003868T5 (de) 2018-07-30 2021-04-22 Sony Semiconductor Solutions Corporation Festkörper-bildgebungselement und elektronische vorrichtung
US12063801B2 (en) 2018-07-31 2024-08-13 Sony Semiconductor Solutions Corporation Imaging element and imaging device including an organic semiconductor material
TW202035577A (zh) * 2018-09-06 2020-10-01 日商富士軟片股份有限公司 結構體、光感測器及圖像顯示裝置
US12376410B2 (en) * 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
WO2021085227A1 (ja) * 2019-11-01 2021-05-06 ソニー株式会社 光電変換素子および撮像素子
JP7531272B2 (ja) * 2019-11-15 2024-08-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202145595A (zh) * 2020-01-14 2021-12-01 美商寬騰矽公司 用於壽命及光譜特性分析之感應器
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
TW202147591A (zh) 2020-03-02 2021-12-16 美商寬騰矽公司 用於多維信號分析之整合感應器
JPWO2022130835A1 (https=) * 2020-12-15 2022-06-23
JP2022190538A (ja) * 2021-06-14 2022-12-26 株式会社ジャパンディスプレイ 検出装置
JP2023005880A (ja) * 2021-06-29 2023-01-18 ソニーセミコンダクタソリューションズ株式会社 光電変換素子、光検出装置、および電子機器
TWI825846B (zh) * 2022-07-13 2023-12-11 力成科技股份有限公司 封裝結構及其製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
FR2597647B1 (fr) * 1986-04-18 1992-06-12 Thomson Csf Registre a decalage a transfert de charge muni d'un dispositif de lecture en tension sur diode flottante
JP2606225B2 (ja) * 1987-08-27 1997-04-30 セイコーエプソン株式会社 電荷結合素子
JPH0595100A (ja) 1991-08-13 1993-04-16 Fuji Xerox Co Ltd イメージセンサ
US7242449B1 (en) * 1999-07-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and integral image recognition/display apparatus
KR100745595B1 (ko) 2004-11-29 2007-08-02 삼성전자주식회사 이미지 센서의 마이크로 렌즈 및 그 형성 방법
JP2007258424A (ja) * 2006-03-23 2007-10-04 Seiko Epson Corp 固体撮像素子の製造方法及び固体撮像素子
JP2008021875A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
CN101170118B (zh) * 2006-10-25 2010-11-10 鸿富锦精密工业（深圳）有限公司 影像感测器封装、影像感测器模组及它们的制造方法
JP2008112907A (ja) * 2006-10-31 2008-05-15 Powerchip Semiconductor Corp イメージセンサー及びその製作方法
JP4961590B2 (ja) * 2007-04-13 2012-06-27 力晶科技股▲ふん▼有限公司 イメージセンサー及びその製作方法
JP5509846B2 (ja) 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5534981B2 (ja) * 2010-06-30 2014-07-02 株式会社東芝 固体撮像装置
JP5909975B2 (ja) * 2011-10-06 2016-04-27 ソニー株式会社 撮像装置および電子機器
KR101774491B1 (ko) * 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
KR101861650B1 (ko) * 2011-10-17 2018-05-29 삼성전자주식회사 이미지 센서, 이를 포함하는 전자 시스템 및 그 이미지 센싱 방법
JP2013157883A (ja) 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
JP5885608B2 (ja) * 2012-07-23 2016-03-15 株式会社東芝 固体撮像装置
JP6108172B2 (ja) * 2013-09-02 2017-04-05 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015103735A (ja) * 2013-11-27 2015-06-04 ソニー株式会社 固体撮像素子および電子機器
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102355558B1 (ko) * 2014-07-31 2022-01-27 삼성전자주식회사 이미지 센서
JP2016039203A (ja) * 2014-08-06 2016-03-22 ソニー株式会社 機能性素子および電子機器
KR102441803B1 (ko) 2014-09-02 2022-09-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 전자 기기
US9515105B2 (en) 2015-02-18 2016-12-06 Semiconductor Components Industries, Llc Dual photodiode image pixels with preferential blooming path
JP6555468B2 (ja) * 2015-04-02 2019-08-07 パナソニックＩｐマネジメント株式会社 撮像装置
JP6808316B2 (ja) * 2015-12-04 2021-01-06 キヤノン株式会社 撮像装置、および、撮像システム
JP6780421B2 (ja) * 2016-03-01 2020-11-04 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、固体撮像装置の駆動方法
JP6926450B2 (ja) 2016-11-22 2021-08-25 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置

Also Published As

Publication number Publication date
CN109983579A (zh) 2019-07-05
KR20190084049A (ko) 2019-07-15
JP2018085402A (ja) 2018-05-31
TW201834227A (zh) 2018-09-16
US20240096914A1 (en) 2024-03-21
KR20220103203A (ko) 2022-07-21
JP6926450B2 (ja) 2021-08-25
US11901382B2 (en) 2024-02-13
KR102628546B1 (ko) 2024-01-25
KR20230073358A (ko) 2023-05-25
KR102543263B1 (ko) 2023-06-14
US20190371844A1 (en) 2019-12-05
TW202301663A (zh) 2023-01-01
TW202205658A (zh) 2022-02-01
WO2018096980A2 (en) 2018-05-31
US11222912B2 (en) 2022-01-11
TWI876203B (zh) 2025-03-11
KR102422857B1 (ko) 2022-07-20
CN109983579B (zh) 2022-11-18
US12324262B2 (en) 2025-06-03
TWI782756B (zh) 2022-11-01
US20220093660A1 (en) 2022-03-24
TWI746697B (zh) 2021-11-21
WO2018096980A3 (en) 2018-06-28

Similar Documents

Publication Publication Date Title
US12324262B2 (en) Imaging element, stacked-type imaging element and solid-state imaging apparatus
CN107146850B (zh) 成像元件、层叠型成像元件、固态成像装置及其驱动方法
US12538604B2 (en) Imaging element, laminated imaging element, and solid-state imaging device
CN110459551B (zh) 成像器件及其驱动方法以及电子装置
KR102604847B1 (ko) 촬상 소자, 적층형 촬상 소자 및 고체 촬상 장치
CN110771156A (zh) 成像元件、层叠式成像元件和固态成像装置
US11985838B2 (en) Imaging device, stacked imaging device, and solid-state imaging apparatus
CN115360208B (zh) 成像元件、层叠式成像元件和固态成像装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination