JP6925900B2 - 切断加工方法 - Google Patents

切断加工方法 Download PDF

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Publication number
JP6925900B2
JP6925900B2 JP2017140871A JP2017140871A JP6925900B2 JP 6925900 B2 JP6925900 B2 JP 6925900B2 JP 2017140871 A JP2017140871 A JP 2017140871A JP 2017140871 A JP2017140871 A JP 2017140871A JP 6925900 B2 JP6925900 B2 JP 6925900B2
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JP
Japan
Prior art keywords
dry etching
processed
etching process
groove
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017140871A
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English (en)
Japanese (ja)
Other versions
JP2019021834A (ja
JP2019021834A5 (enExample
Inventor
真鍋　俊樹
俊樹 真鍋
武彦 妹尾
武彦 妹尾
泉　浩一
浩一 泉
正 荘所
正 荘所
孝文 荻原
孝文 荻原
剛志 坂本
剛志 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Iwatani Corp
Original Assignee
Hamamatsu Photonics KK
Iwatani Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2017140871A priority Critical patent/JP6925900B2/ja
Application filed by Hamamatsu Photonics KK, Iwatani Corp filed Critical Hamamatsu Photonics KK
Priority to KR1020207004266A priority patent/KR20200029541A/ko
Priority to CN201880048776.7A priority patent/CN110998798A/zh
Priority to US16/632,291 priority patent/US11380586B2/en
Priority to PCT/JP2018/026851 priority patent/WO2019017367A1/ja
Priority to DE112018003719.3T priority patent/DE112018003719B8/de
Priority to SG11202000308TA priority patent/SG11202000308TA/en
Priority to TW107124812A priority patent/TWI760531B/zh
Publication of JP2019021834A publication Critical patent/JP2019021834A/ja
Publication of JP2019021834A5 publication Critical patent/JP2019021834A5/ja
Application granted granted Critical
Publication of JP6925900B2 publication Critical patent/JP6925900B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2017140871A 2017-07-20 2017-07-20 切断加工方法 Active JP6925900B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法
CN201880048776.7A CN110998798A (zh) 2017-07-20 2018-07-18 切割加工方法
US16/632,291 US11380586B2 (en) 2017-07-20 2018-07-18 Cutting method
PCT/JP2018/026851 WO2019017367A1 (ja) 2017-07-20 2018-07-18 切断加工方法
KR1020207004266A KR20200029541A (ko) 2017-07-20 2018-07-18 절단 가공 방법
DE112018003719.3T DE112018003719B8 (de) 2017-07-20 2018-07-18 Schneideverfahren
SG11202000308TA SG11202000308TA (en) 2017-07-20 2018-07-18 Cutting method
TW107124812A TWI760531B (zh) 2017-07-20 2018-07-18 切斷加工方法（一）

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法

Publications (3)

Publication Number Publication Date
JP2019021834A JP2019021834A (ja) 2019-02-07
JP2019021834A5 JP2019021834A5 (enExample) 2020-08-20
JP6925900B2 true JP6925900B2 (ja) 2021-08-25

Family

ID=65015109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017140871A Active JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法

Country Status (8)

Country Link
US (1) US11380586B2 (enExample)
JP (1) JP6925900B2 (enExample)
KR (1) KR20200029541A (enExample)
CN (1) CN110998798A (enExample)
DE (1) DE112018003719B8 (enExample)
SG (1) SG11202000308TA (enExample)
TW (1) TWI760531B (enExample)
WO (1) WO2019017367A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11972955B2 (en) * 2020-05-29 2024-04-30 Resonac Corporation Dry etching method, method for manufacturing semiconductor element, and cleaning method
JP7486398B2 (ja) * 2020-10-19 2024-05-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273082A (ja) * 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2004359475A (ja) 2003-06-02 2004-12-24 Seiko Epson Corp 光学素子の製造方法及び光学装置
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP5041681B2 (ja) 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置
CN101681822B (zh) 2007-05-25 2012-06-13 浜松光子学株式会社 切断用加工方法
JP5264383B2 (ja) 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8722516B2 (en) * 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP2013042119A (ja) 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP5939752B2 (ja) * 2011-09-01 2016-06-22 株式会社ディスコ ウェーハの分割方法
JP5713043B2 (ja) 2012-05-07 2015-05-07 株式会社デンソー 半導体基板の製造方法
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall

Also Published As

Publication number Publication date
JP2019021834A (ja) 2019-02-07
WO2019017367A1 (ja) 2019-01-24
DE112018003719T5 (de) 2020-04-02
DE112018003719B4 (de) 2025-01-02
SG11202000308TA (en) 2020-02-27
TW201921468A (zh) 2019-06-01
US11380586B2 (en) 2022-07-05
DE112018003719B8 (de) 2025-02-27
CN110998798A (zh) 2020-04-10
KR20200029541A (ko) 2020-03-18
TWI760531B (zh) 2022-04-11
US20200365460A1 (en) 2020-11-19

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