DE112018003719B8 - Schneideverfahren - Google Patents

Schneideverfahren Download PDF

Info

Publication number
DE112018003719B8
DE112018003719B8 DE112018003719.3T DE112018003719T DE112018003719B8 DE 112018003719 B8 DE112018003719 B8 DE 112018003719B8 DE 112018003719 T DE112018003719 T DE 112018003719T DE 112018003719 B8 DE112018003719 B8 DE 112018003719B8
Authority
DE
Germany
Prior art keywords
cutting process
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112018003719.3T
Other languages
German (de)
English (en)
Other versions
DE112018003719T5 (de
DE112018003719B4 (de
Inventor
Toshiki Manabe
Takehiko Senoo
Koichi Izumi
Tadashi Shojo
Takafumi Ogiwara
Takeshi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Iwatani Corp
Original Assignee
Hamamatsu Photonics KK
Iwatani Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK, Iwatani Corp filed Critical Hamamatsu Photonics KK
Publication of DE112018003719T5 publication Critical patent/DE112018003719T5/de
Publication of DE112018003719B4 publication Critical patent/DE112018003719B4/de
Application granted granted Critical
Publication of DE112018003719B8 publication Critical patent/DE112018003719B8/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
DE112018003719.3T 2017-07-20 2018-07-18 Schneideverfahren Active DE112018003719B8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-140871 2017-07-20
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法
PCT/JP2018/026851 WO2019017367A1 (ja) 2017-07-20 2018-07-18 切断加工方法

Publications (3)

Publication Number Publication Date
DE112018003719T5 DE112018003719T5 (de) 2020-04-02
DE112018003719B4 DE112018003719B4 (de) 2025-01-02
DE112018003719B8 true DE112018003719B8 (de) 2025-02-27

Family

ID=65015109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112018003719.3T Active DE112018003719B8 (de) 2017-07-20 2018-07-18 Schneideverfahren

Country Status (8)

Country Link
US (1) US11380586B2 (enExample)
JP (1) JP6925900B2 (enExample)
KR (1) KR20200029541A (enExample)
CN (1) CN110998798A (enExample)
DE (1) DE112018003719B8 (enExample)
SG (1) SG11202000308TA (enExample)
TW (1) TWI760531B (enExample)
WO (1) WO2019017367A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021241143A1 (ja) * 2020-05-29 2021-12-02 昭和電工株式会社 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
JP7486398B2 (ja) * 2020-10-19 2024-05-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287846A1 (en) 2004-06-29 2005-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
WO2011112823A2 (en) 2010-03-10 2011-09-15 Applied Materials, Inc. Apparatus and methods for cyclical oxidation and etching
US20130059428A1 (en) 2011-09-01 2013-03-07 Disco Corporation Wafer dividing method
DE112013002348T5 (de) 2012-05-07 2015-01-29 Denso Corporation Herstellungsverfahren für ein Halbleitersubstrat

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273082A (ja) * 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2004359475A (ja) 2003-06-02 2004-12-24 Seiko Epson Corp 光学素子の製造方法及び光学装置
JP5041681B2 (ja) * 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置
KR101506355B1 (ko) 2007-05-25 2015-03-26 하마마츠 포토닉스 가부시키가이샤 절단용 가공방법
JP5264383B2 (ja) 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
US8722516B2 (en) * 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP2013042119A (ja) * 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050287846A1 (en) 2004-06-29 2005-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
WO2011112823A2 (en) 2010-03-10 2011-09-15 Applied Materials, Inc. Apparatus and methods for cyclical oxidation and etching
US20130059428A1 (en) 2011-09-01 2013-03-07 Disco Corporation Wafer dividing method
DE112013002348T5 (de) 2012-05-07 2015-01-29 Denso Corporation Herstellungsverfahren für ein Halbleitersubstrat

Also Published As

Publication number Publication date
DE112018003719T5 (de) 2020-04-02
TW201921468A (zh) 2019-06-01
KR20200029541A (ko) 2020-03-18
DE112018003719B4 (de) 2025-01-02
CN110998798A (zh) 2020-04-10
TWI760531B (zh) 2022-04-11
WO2019017367A1 (ja) 2019-01-24
US20200365460A1 (en) 2020-11-19
US11380586B2 (en) 2022-07-05
JP2019021834A (ja) 2019-02-07
SG11202000308TA (en) 2020-02-27
JP6925900B2 (ja) 2021-08-25

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R083 Amendment of/additions to inventor(s)
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021301000

Ipc: H10P0058000000