TWI760531B - 切斷加工方法（一） - Google Patents

切斷加工方法（一） Download PDF

Info

Publication number
TWI760531B
TWI760531B TW107124812A TW107124812A TWI760531B TW I760531 B TWI760531 B TW I760531B TW 107124812 A TW107124812 A TW 107124812A TW 107124812 A TW107124812 A TW 107124812A TW I760531 B TWI760531 B TW I760531B
Authority
TW
Taiwan
Prior art keywords
dry etching
processed
forming
etching process
cutting
Prior art date
Application number
TW107124812A
Other languages
English (en)
Chinese (zh)
Other versions
TW201921468A (zh
Inventor
真鍋俊樹
妹尾武彥
泉浩一
莊所正
荻原孝文
坂本剛志
Original Assignee
日商岩谷產業股份有限公司
日商濱松赫德尼古斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商岩谷產業股份有限公司, 日商濱松赫德尼古斯股份有限公司 filed Critical 日商岩谷產業股份有限公司
Publication of TW201921468A publication Critical patent/TW201921468A/zh
Application granted granted Critical
Publication of TWI760531B publication Critical patent/TWI760531B/zh

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
TW107124812A 2017-07-20 2018-07-18 切斷加工方法（一） TWI760531B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-140871 2017-07-20
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法

Publications (2)

Publication Number Publication Date
TW201921468A TW201921468A (zh) 2019-06-01
TWI760531B true TWI760531B (zh) 2022-04-11

Family

ID=65015109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107124812A TWI760531B (zh) 2017-07-20 2018-07-18 切斷加工方法（一）

Country Status (8)

Country Link
US (1) US11380586B2 (enExample)
JP (1) JP6925900B2 (enExample)
KR (1) KR20200029541A (enExample)
CN (1) CN110998798A (enExample)
DE (1) DE112018003719B8 (enExample)
SG (1) SG11202000308TA (enExample)
TW (1) TWI760531B (enExample)
WO (1) WO2019017367A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11972955B2 (en) * 2020-05-29 2024-04-30 Resonac Corporation Dry etching method, method for manufacturing semiconductor element, and cleaning method
JP7486398B2 (ja) * 2020-10-19 2024-05-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008146744A1 (ja) * 2007-05-25 2008-12-04 Hamamatsu Photonics K.K. 切断用加工方法
US20120077296A1 (en) * 2010-09-28 2012-03-29 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
TW201318199A (zh) * 2011-07-21 2013-05-01 Hamamatsu Photonics Kk 發光元件的製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273082A (ja) * 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2004359475A (ja) 2003-06-02 2004-12-24 Seiko Epson Corp 光学素子の製造方法及び光学装置
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP5041681B2 (ja) 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置
JP5264383B2 (ja) 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5939752B2 (ja) * 2011-09-01 2016-06-22 株式会社ディスコ ウェーハの分割方法
JP5713043B2 (ja) 2012-05-07 2015-05-07 株式会社デンソー 半導体基板の製造方法
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008146744A1 (ja) * 2007-05-25 2008-12-04 Hamamatsu Photonics K.K. 切断用加工方法
US20120077296A1 (en) * 2010-09-28 2012-03-29 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
TW201318199A (zh) * 2011-07-21 2013-05-01 Hamamatsu Photonics Kk 發光元件的製造方法

Also Published As

Publication number Publication date
JP2019021834A (ja) 2019-02-07
WO2019017367A1 (ja) 2019-01-24
DE112018003719T5 (de) 2020-04-02
DE112018003719B4 (de) 2025-01-02
SG11202000308TA (en) 2020-02-27
TW201921468A (zh) 2019-06-01
US11380586B2 (en) 2022-07-05
DE112018003719B8 (de) 2025-02-27
CN110998798A (zh) 2020-04-10
JP6925900B2 (ja) 2021-08-25
KR20200029541A (ko) 2020-03-18
US20200365460A1 (en) 2020-11-19

Similar Documents

Publication Publication Date Title
CN102243989B (zh) 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法
CN104169040B (zh) 利用具有等离子体蚀刻的混合式多步骤激光划线工艺的晶圆切割
TWI579892B (zh) 用以形成具有多膜層的間隔壁之蝕刻方法
CN105493255B (zh) 用于横向裁剪硬掩模的方法
CN101170055B (zh) 通过热处理从所蚀刻的衬底去除卤素残余物的集成方法
WO2017151958A1 (en) Isotropic silicon and silicon-germanium etching with tunable selectivity
JP2010147488A (ja) ダイシング中あるいは後のエッチングによるダイ強度の増加
WO2012008409A1 (ja) エッチング方法
CN113677825B (zh) 沟槽中薄膜沉积的方法
KR101953044B1 (ko) 규소 화합물용 에칭 가스 조성물 및 에칭 방법
CN118571796A (zh) 使用多程激光划刻工艺及等离子体蚀刻工艺的混合晶片切割方法
TWI760531B (zh) 切斷加工方法（一）
TWI817066B (zh) 用於蝕刻用於半導體應用的材料層的方法
TWI755553B (zh) 切斷加工方法（二）
TW202439436A (zh) 矽與鍺蝕刻
JP2019021834A5 (enExample)
US20220375749A1 (en) Method of manufacturing sic semiconductor device and sic semiconductor device
TWI836230B (zh) 用於雷射切割之自動化切口偏移映射及校正系統
TW202507841A (zh) 氮化矽之無鹵蝕刻
KR20210031414A (ko) 기판 처리 방법
WO2009127740A1 (en) A method of dicing wafers to give high die strength