JP2019021834A5 - - Google Patents

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Publication number
JP2019021834A5
JP2019021834A5 JP2017140871A JP2017140871A JP2019021834A5 JP 2019021834 A5 JP2019021834 A5 JP 2019021834A5 JP 2017140871 A JP2017140871 A JP 2017140871A JP 2017140871 A JP2017140871 A JP 2017140871A JP 2019021834 A5 JP2019021834 A5 JP 2019021834A5
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JP
Japan
Prior art keywords
pressure
less
dry etching
etching process
reaction
Prior art date
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Application number
JP2017140871A
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English (en)
Japanese (ja)
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JP2019021834A (ja
JP6925900B2 (ja
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Priority claimed from JP2017140871A external-priority patent/JP6925900B2/ja
Priority to JP2017140871A priority Critical patent/JP6925900B2/ja
Priority to SG11202000308TA priority patent/SG11202000308TA/en
Priority to US16/632,291 priority patent/US11380586B2/en
Priority to PCT/JP2018/026851 priority patent/WO2019017367A1/ja
Priority to KR1020207004266A priority patent/KR20200029541A/ko
Priority to DE112018003719.3T priority patent/DE112018003719B8/de
Priority to CN201880048776.7A priority patent/CN110998798A/zh
Priority to TW107124812A priority patent/TWI760531B/zh
Publication of JP2019021834A publication Critical patent/JP2019021834A/ja
Publication of JP2019021834A5 publication Critical patent/JP2019021834A5/ja
Publication of JP6925900B2 publication Critical patent/JP6925900B2/ja
Application granted granted Critical
Active legal-status Critical Current
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JP2017140871A 2017-07-20 2017-07-20 切断加工方法 Active JP6925900B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法
CN201880048776.7A CN110998798A (zh) 2017-07-20 2018-07-18 切割加工方法
US16/632,291 US11380586B2 (en) 2017-07-20 2018-07-18 Cutting method
PCT/JP2018/026851 WO2019017367A1 (ja) 2017-07-20 2018-07-18 切断加工方法
KR1020207004266A KR20200029541A (ko) 2017-07-20 2018-07-18 절단 가공 방법
DE112018003719.3T DE112018003719B8 (de) 2017-07-20 2018-07-18 Schneideverfahren
SG11202000308TA SG11202000308TA (en) 2017-07-20 2018-07-18 Cutting method
TW107124812A TWI760531B (zh) 2017-07-20 2018-07-18 切斷加工方法（一）

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017140871A JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法

Publications (3)

Publication Number Publication Date
JP2019021834A JP2019021834A (ja) 2019-02-07
JP2019021834A5 true JP2019021834A5 (enExample) 2020-08-20
JP6925900B2 JP6925900B2 (ja) 2021-08-25

Family

ID=65015109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017140871A Active JP6925900B2 (ja) 2017-07-20 2017-07-20 切断加工方法

Country Status (8)

Country Link
US (1) US11380586B2 (enExample)
JP (1) JP6925900B2 (enExample)
KR (1) KR20200029541A (enExample)
CN (1) CN110998798A (enExample)
DE (1) DE112018003719B8 (enExample)
SG (1) SG11202000308TA (enExample)
TW (1) TWI760531B (enExample)
WO (1) WO2019017367A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11972955B2 (en) * 2020-05-29 2024-04-30 Resonac Corporation Dry etching method, method for manufacturing semiconductor element, and cleaning method
JP7486398B2 (ja) * 2020-10-19 2024-05-17 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273082A (ja) * 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2004359475A (ja) 2003-06-02 2004-12-24 Seiko Epson Corp 光学素子の製造方法及び光学装置
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP5041681B2 (ja) 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置
CN101681822B (zh) 2007-05-25 2012-06-13 浜松光子学株式会社 切断用加工方法
JP5264383B2 (ja) 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8722516B2 (en) * 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP2013042119A (ja) 2011-07-21 2013-02-28 Hamamatsu Photonics Kk 発光素子の製造方法
JP5939752B2 (ja) * 2011-09-01 2016-06-22 株式会社ディスコ ウェーハの分割方法
JP5713043B2 (ja) 2012-05-07 2015-05-07 株式会社デンソー 半導体基板の製造方法
US8993414B2 (en) * 2012-07-13 2015-03-31 Applied Materials, Inc. Laser scribing and plasma etch for high die break strength and clean sidewall

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