WO2019017367A1 - 切断加工方法 - Google Patents

切断加工方法 Download PDF

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Publication number
WO2019017367A1
WO2019017367A1 PCT/JP2018/026851 JP2018026851W WO2019017367A1 WO 2019017367 A1 WO2019017367 A1 WO 2019017367A1 JP 2018026851 W JP2018026851 W JP 2018026851W WO 2019017367 A1 WO2019017367 A1 WO 2019017367A1
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WO
WIPO (PCT)
Prior art keywords
dry etching
etching process
groove
forming
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2018/026851
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English (en)
French (fr)
Japanese (ja)
Inventor
真鍋　俊樹
武彦 妹尾
泉　浩一
正 荘所
孝文 荻原
剛志 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Iwatani Corp
Original Assignee
Hamamatsu Photonics KK
Iwatani Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK, Iwatani Corp filed Critical Hamamatsu Photonics KK
Priority to CN201880048776.7A priority Critical patent/CN110998798A/zh
Priority to US16/632,291 priority patent/US11380586B2/en
Priority to KR1020207004266A priority patent/KR20200029541A/ko
Priority to DE112018003719.3T priority patent/DE112018003719B8/de
Priority to SG11202000308TA priority patent/SG11202000308TA/en
Publication of WO2019017367A1 publication Critical patent/WO2019017367A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Definitions

  • the present invention relates to a cutting method, and more particularly to a cutting method for cutting a plate-like object to be cut along a line to cut.
  • a cutting method may be considered in which a processing target such as a semiconductor substrate is cut using the processing method described in the above-mentioned publication.
  • dry etching processing which can be microfabricated is preferable to wet etching processing.
  • the width of the groove formed along the line to be cut is narrowed, so that the etching gas does not easily enter the groove. Therefore, there is a problem that the speed of forming the groove is small.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a cutting method capable of increasing the speed of forming a groove along a line to be cut.
  • the cutting method of the present invention is for cutting a plate-like object to be cut along a line to cut.
  • the cutting processing method forms a modified region on the processing object along the planned cutting line by aligning the focusing point on the processing object and irradiating the laser light, and the modified region on the processing object After forming, forming a groove in the object to be processed along the line to cut.
  • a first dry etching process is performed from the front surface to the back surface of the object to be processed.
  • a first decompression process is performed in which the object to be processed is placed under a reduced pressure atmosphere than in the first dry etching process.
  • a second dry etching treatment is performed from the front surface to the back surface of the object to be processed.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
  • FIG. 5 is a cross-sectional view taken along the line VV of FIG. 4;
  • FIG. 7 is a cross-sectional view taken along the line VII-VII in FIG. FIG.
  • FIG. 7 is a cross-sectional view taken along the line VIII-VIII in FIG. It is a schematic plan view of the processing object after the modification field in the cutting processing method concerning the embodiment of the present invention is formed.
  • FIG. 10 is a cross-sectional view taken along the line XX in FIG. It is a schematic block diagram of the etching processing apparatus used for formation of the groove
  • FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG. 12; It is an expanded sectional view of the area
  • FIG. 11 is an enlarged cross-sectional view for describing a second dry etching process performed on the region A of FIG. 10; It is an expanded sectional view for demonstrating the 2nd pressure reduction process given to the area
  • region A of FIG. FIG. 11 is an enlarged cross-sectional view for explaining a third dry etching process performed on the region A of FIG. 10; It is a schematic plan view of the processing object after division.
  • FIG. 21 is a cross-sectional view taken along the line XXI-XXI of FIG. 20.
  • FIG. 24 is an enlarged cross-sectional view for illustrating a first dry etching process performed on the TEG formation region of FIG. 23;
  • the processing target object 1 of the cutting processing method which concerns on embodiment of this invention is prepared.
  • the processing target 1 is, for example, a semiconductor substrate.
  • the case where the processing target 1 is a semiconductor substrate will be described.
  • the semiconductor substrate as the processing target 1 is configured in a substantially disc shape.
  • An orientation flat 2 is provided on the outer periphery of a processing target (semiconductor substrate) 1.
  • the processing target (semiconductor substrate) 1 is, for example, a silicon (Si) wafer or the like.
  • a plurality of functional elements are provided on the surface 3 of the processing target (semiconductor substrate) 1. That is, the processing target (semiconductor substrate) 1 includes a substrate body and a plurality of functional elements arranged on the surface of the substrate body.
  • the functional element is, for example, a semiconductor operation layer formed by crystal growth, a light receiving element such as a photodiode, a light emitting element such as a laser diode, or a circuit element formed as a circuit.
  • a plurality of functional elements are provided in a matrix in a direction parallel to and perpendicular to the orientation flat 2 of the semiconductor substrate.
  • the laser processing apparatus 100 includes a laser light source 101 that pulse-oscillates laser light (processing laser light) L and dichroics arranged so as to change the direction of the optical axis of the laser light L by 90 °.
  • a mirror 103 and a focusing lens 105 for focusing the laser light L are provided.
  • the laser processing apparatus 100 includes a support base 107 for supporting the processing target (semiconductor substrate) 1 to which the laser light L condensed by the condensing lens 105 is applied, and the support base 107 as X and Y.
  • a stage 111 for moving in the Z-axis direction, a laser light source control unit 102 for controlling the laser light source 101 for adjusting the output and pulse width of the laser light L, and a stage control unit for controlling movement of the stage 111 And 115 are provided.
  • the laser beam L emitted from the laser light source 101 is changed in the direction of its optical axis by 90 ° by the dichroic mirror 103, and the processing target object mounted on the support table 107 (semiconductor substrate ) Is collected by the condensing lens 105.
  • the stage 111 is moved, and the object to be processed (semiconductor substrate) 1 is moved relative to the laser light L along the line to cut.
  • a modified region to be a starting point of cutting is formed on the processing target (semiconductor substrate) 1.
  • this reforming region will be described in detail.
  • a planned cutting line 5 for cutting the processing target (semiconductor substrate) 1 is set in the plate-shaped processing target (semiconductor substrate) 1.
  • the line to cut 5 is a virtual line extending linearly.
  • the laser light L is scheduled to be cut in a state in which the focusing point P is aligned with the inside of the processing target (semiconductor substrate) 1. It is moved relatively along the line 5 (ie, in the direction of arrow A in FIG. 4).
  • the modified region 7 is formed along the planned cutting line 5 in the object (semiconductor substrate) 1 and is formed along the planned cutting line 5.
  • the reforming region 7 becomes the cutting start region 8.
  • the focusing point P is a portion where the laser light L is focused.
  • the planned cutting line 5 is not limited to a straight line but may be a curved line, or may be a line drawn actually on the surface 3 of the processing target 1 without being limited to an imaginary line.
  • the reforming region 7 may be formed continuously or may be formed intermittently.
  • the modified region 7 may be formed at least inside the object 1 to be processed.
  • a crack may be formed starting from the modified region 7, and the crack and the modified region 7 may be exposed to the outer surface (surface, back surface, or outer peripheral surface) of the processing target 1.
  • the modified region 7 refers to a region in which the density, refractive index, mechanical strength and other physical properties are different from those in the surrounding area. For example, there are a melt processing region, a crack region, a dielectric breakdown region, a refractive index change region, and the like, and there are also regions in which these are mixed.
  • the object to be processed (semiconductor substrate) 1 is fixed on the support table 107 of the laser processing apparatus 100. Then, with the surface 3 of the processing object (semiconductor substrate) 1 as the laser light incident surface, the condensing point P is aligned with the inside of the processing object (semiconductor substrate) 1 and the laser light L is irradiated. The focusing point P is scanned along the line to cut 5 which is set in a grid shape so as to pass between the adjacent functional elements. Further, on the planned cutting line 5, the condensing point P is scanned along the thickness direction of the processing target (semiconductor substrate) 1.
  • the modified regions 7 are formed in a lattice on the object to be processed (semiconductor substrate) 1. Further, as shown in FIG. 10, in the inside of the processing target (semiconductor substrate) 1, the modified region 7 is formed from the front surface 3 side to the back surface 4 side of the processing target (semiconductor substrate) 1. That is, the modified region 7 is formed in the thickness direction of the processing target (semiconductor substrate) 1.
  • the modified region 7 may be formed such that the formation state of the modified region 7 on the front surface side of the processing target (semiconductor substrate) 1 and the formation state of the modified region 7 on the back surface side are substantially the same.
  • the formation state of 7 is substantially the same. That is, the modified regions 7 are formed symmetrically with respect to the center in the thickness direction of the processing target (semiconductor substrate) 1.
  • the etching processing apparatus 200 includes a chamber 201, a stage 202, a pressure gauge 203, a thermometer 204, a valve 205, a vacuum pump 206, a valve 207, a valve 208, and a flow rate.
  • a controller 209, a first gas supply device 210, a valve 211, a flow rate controller 212, and a second gas supply device 213 are provided.
  • the chamber 201 is configured to receive the processing target (semiconductor substrate) 1 in which the modified region 7 is formed.
  • the object to be processed (semiconductor substrate) 1 is mounted on a stage 202 disposed in the chamber 201.
  • the stage 202 is configured to be adjustable in temperature. By heating the stage 202 while the processing target (semiconductor substrate) 1 is placed on the stage 202, the processing target (semiconductor substrate) 1 is heated so that the temperature becomes equal to that of the stage 202.
  • a pressure gauge 203 for measuring the pressure in the chamber 201 is connected to the chamber 201.
  • a thermometer 204 for measuring the temperature of the object 1 based on the temperature of the stage 202.
  • the thermometer 204 is connected to the stage 202, and measures the temperature of the processing target (semiconductor substrate) 1 heated to the same temperature as the stage 202 by measuring the temperature of the stage 202.
  • a vacuum pump 206 is connected to the chamber 201 by a pipe via a valve 205.
  • the vacuum pump 206 is, for example, a turbo molecular pump, a mechanical booster pump, or the like.
  • a first gas supply device 210 is connected to the chamber 201 by piping via a valve 207, a valve 208, and a flow rate controller 209.
  • the first gas supply device 210 is configured to be able to supply a first etching gas.
  • a second gas supply device 213 is connected to the chamber 201 by piping via a valve 207, a valve 211, and a flow rate controller 212.
  • the second gas supply device 213 is configured to be able to supply a second etching gas.
  • the second etching gas may be the same etching gas as the first etching gas, or may be a different etching gas.
  • the valve 205, the valve 207, the valve 208, and the valve 211 are, for example, electronic control valves.
  • the flow controllers 209 and 212 are, for example, mass flow meters.
  • the etching processing apparatus 200 includes the second gas supply apparatus 213 in addition to the first gas supply apparatus 210 in FIG. 11, only the first gas supply apparatus 210 may be provided. That is, the etching processing apparatus 200 may include only one gas supply apparatus. In addition, the etching processing apparatus 200 may include three or more gas supply apparatuses.
  • dry etching processing is performed from the front surface 3 to the back surface 4 of the object to be processed (semiconductor substrate) 1.
  • the dry etching process is, for example, an anisotropic dry etching process using a mixed gas of sulfur hexafluoride (SF 6 ), cyclopentafluoride (C 4 F 8 ) and oxygen (O 2 ). Thereby, the surface 3 of the processing target (semiconductor substrate) 1 is etched.
  • a groove 9 is formed on the surface 3 of the object to be processed (semiconductor substrate) 1 along the line 5.
  • the dry etching process may be performed in a state where, for example, a photoresist is formed on the functional element. The photoresist is removed at the end of the dry etch process.
  • decompression processing is performed in which the object to be processed (semiconductor substrate) 1 is placed under a reduced pressure atmosphere than in dry etching processing.
  • the inside of the chamber 201 is evacuated by operating the vacuum pump 206. That is, in the decompression process, the inside of the chamber 201 is evacuated.
  • the reacted latent reaction by-product by the dry etching process is exhausted through the piping via the vacuum pump 206.
  • FIGS. 14 to 19 correspond to the area A surrounded by the alternate long and short dash line in FIGS. 10 and 13.
  • grooves 9 are formed on the object to be processed (semiconductor substrate) 1 along the lines to be cut 5 shown in FIG. 4. Is formed.
  • the first dry etching process is performed on the processing target (semiconductor substrate) 1 from the front surface 3 to the back surface 4 of the processing target (semiconductor substrate) 1.
  • the surface 3 of the processing target (semiconductor substrate) 1 is etched by the first dry etching process.
  • the groove 9 is formed in the middle of the modified region 7 from the front surface 3 to the back surface 4 of the processing target (semiconductor substrate) 1.
  • a first decompression process is performed.
  • the object to be processed (semiconductor substrate) 1 is placed under a reduced pressure atmosphere than in the first dry etching process.
  • the reacted latent reaction by-product in the first dry etching process is removed from the chamber 201 shown in FIG. Therefore, the reacted latent reaction by-product remaining in the groove 9 formed by the first dry etching process is removed from the groove 9.
  • a second dry etching process is performed from the front surface 3 to the back surface 4 of the object to be processed (semiconductor substrate) 1.
  • the surface 3 of the processing target (semiconductor substrate) 1 is etched by the second dry etching process.
  • the groove 9 is formed from the front surface 3 to the back surface 4 of the processing target (semiconductor substrate) 1 to the end of the modified region 7.
  • the time of the etching process may be longer than that of the first dry etching process.
  • the pressure of the etching process may be higher than that of the first dry etching process.
  • the etching gas can be sufficiently introduced into the groove formed by the first dry etching process.
  • a second decompression process is performed.
  • the processing target 1 is placed under a reduced pressure atmosphere than in the second dry etching processing. Thereby, the reacted latent reaction by-product in the second dry etching process is removed.
  • the third dry etching processing is performed from the front surface 3 to the back surface 4 of the object to be processed (semiconductor substrate) 1.
  • the surface 3 of the processing target (semiconductor substrate) 1 is etched by the third dry etching process.
  • the groove 9 is formed to extend from the front surface 3 to the back surface 4 of the object 1 to be processed.
  • the object to be processed (semiconductor substrate) 1 is cut along the modified region 7.
  • the groove 9 may be formed to extend from the front surface 3 to the back surface 4 of the object (semiconductor substrate) 1 by the second dry etching process.
  • FIG. 12 and FIG. 13 the state where the distance between each chip which consists of the processed object (semiconductor substrate) 1 cut
  • FIGS. 20 and 21 show a state in which the distance between chips is maintained at a certain level or more.
  • the distance between chips may be a distance suitable for the next step.
  • the cutting method according to the embodiment of the present invention is not limited to these times.
  • the number of times of dry etching treatment may be two or more (two or more), and the number of times of decompression treatment may be one (one) or plural (two or more).
  • n times of dry etching processes are performed, and n ⁇ 1 reduced pressure processes are performed. Will be described.
  • n means an integer of 4 or more.
  • a step of forming a modified region is performed (step S1).
  • a step of forming a groove is performed (step S2).
  • the first dry etching process step S21
  • the first decompression process step S22
  • the second dry etching process step S23
  • the second decompression process step S24
  • the first The third dry etching process step S25
  • the n-2th decompression process step S26
  • the n-1st dry etching process step S27
  • the n-1th decompression process step S28
  • the nth dry etching process step S29
  • the object to be processed is placed under an atmosphere that is lower in pressure than the dry etching processing immediately before each reduced pressure processing.
  • the groove is formed from the front surface to the back surface of the object to be processed, the object to be processed is cut (step S30).
  • a halogen-based etching gas may be used for each of the first dry etching process and the second dry etching process.
  • a halogen-based etching gas may be used for each of the first to nth dry etching processes.
  • the halogen-based etching gases are chlorine trifluoride (ClF 3 ), nitrogen trifluoride (NF 3 ), sulfur hexafluoride (SF 6 ), fluorine (F 2 ), chlorine (Cl 2 ), hydrogen bromide ( It may contain at least one of HBr), carbon tetrafluoride (CF 4 ), cyclobutane octafluoride (C 4 F 8 ), methane trifluoride (CHF 3 ), and boron trichloride (BCl 3 ). That is, the halogen-based etching gas may be either a single gas or a mixed gas using these materials.
  • the halogen-based etching gas may be, for example, a mixed gas of cyclobutane octafluoride (C 4 F 8 ) and oxygen (O 2 ).
  • the cutting method according to the embodiment of the present invention after the modified region 7 is formed on the object to be processed (semiconductor substrate) 1, the object to be processed (semiconductor substrate) 1 along the line to cut 5
  • the groove 9 is formed.
  • a first dry etching process is performed utilizing the fact that the etching rate of the modified region 7 is higher than the etching rate of the non-modified region, whereby the line to be cut 5
  • a groove 9 is formed in the object to be processed (semiconductor substrate) 1 along the direction.
  • the first depressurization process is performed to discharge the reacted remaining reaction byproducts.
  • the second dry etching treatment is performed, whereby the etching gas is easily introduced into the groove 9 formed by the first dry etching treatment. Thereby, the etching rate of the second dry etching process can be improved.
  • the pressure in the chamber is maintained constant, and the etching rate is reduced by the reaction remaining reaction by-product.
  • the first reaction treatment residual product generated by performing the first dry etching process is subjected to the first pressure reduction process.
  • the second dry etching process is performed after being discharged from the inside of the groove 9 and the chamber 201, the etching gas is easily introduced into the groove 9 formed by the first dry etching process.
  • the etching rate can be improved as compared to the case where the etching process is performed.
  • the groove 9 is formed to extend from the front surface to the back surface of the object to be processed 1 along the line to cut 5.
  • the processing object 1 may be cut. Since the etching rate can be improved, the object to be processed 1 can be cut quickly.
  • the second residual pressure treatment is performed after the second dry etching treatment, thereby causing the reaction stay by-product. Things are discharged.
  • the third dry etching treatment is performed, whereby the etching gas is easily introduced into the groove 9 formed by the second dry etching treatment.
  • the groove 9 can be formed by performing a cycle of dry etching treatment, reduced pressure treatment, and dry etching treatment a plurality of times. Therefore, the etching rate can be further improved.
  • a halogen-based etching gas can be used for each of the first dry etching process and the second dry etching process.
  • chlorine trifluoride (ClF 3 ), nitrogen trifluoride (NF 3 ), sulfur hexafluoride (SF 6 ), and fluorine respectively, as a halogen-based etching gas (F 2 ), chlorine (Cl 2 ), hydrogen bromide (HBr), carbon tetrafluoride (CF 4 ), cyclobutane octafluoride (C 4 F 8 ), methane trifluoride (CHF 3 ), boron trichloride At least one of (BCl 3 ) can be used.
  • the formation state of the modified region 7 on the front side and the modified region 7 on the back side may be formed so as to be substantially identical to the formation state. Thereby, the modified region 7 can be etched uniformly from the front surface side and the back surface side of the workpiece 1.
  • a TEG (Test Element Group) 10 may be formed on a line to be cut of the object to be processed (semiconductor substrate) 1.
  • a TEG Thermal Element Group
  • at least one of tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) may be used as the material of TEG 10.
  • the processing target (semiconductor substrate) 1 includes a substrate body, a functional element (not shown), and the TEG 10.
  • the material of the workpiece 1 may contain at least one of silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo).
  • Si silicon
  • Ti tungsten
  • Ti titanium
  • TiN titanium nitride
  • Mo molybdenum
  • plasma-less chlorine trifluoride (ClF 3 ) gas is used as a halogen-based etching gas, and a pressure of 10 Pa or more and 90 kPa (abs) or less and a boiling point or more of each fluoride of the material
  • the first dry etching process and the second dry etching process may be performed at a temperature less than 200 ° C. Again referring to FIG. 11, this pressure is the pressure in the chamber 201. This temperature is the temperature of the object 1 to be processed.
  • the pressure is set to 10 Pa or more.
  • the pressure is set to 10 Pa or more.
  • the pressure is set to 10 Pa or more.
  • the pressure can be set to 10 Pa using a mechanical booster pump instead of a turbo molecular pump, the pressure is set to 10 Pa or more.
  • the pressure is made 90 kPa or less.
  • etching can be performed over a pressure range of 10 Pa to 90 kPa (abs). For this reason, the pressure range is 10 Pa or more and 90 kPa (abs) or less.
  • Chlorine trifluoride (ClF 3 ) gas can etch silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo).
  • silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) are used as the material of the object 1 to be processed. Since the etching rate in each material can be secured by setting the boiling point or more of each fluoride of the material of the processing target 1, the temperature is made equal to or more than the boiling point of each fluoride of the material. Since the maximum temperature when dicing the device formed on the workpiece 1 is 200 ° C., the temperature is less than 200 ° C.
  • the material of the object 1 is silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN), and molybdenum At least one of Mo) may be included.
  • plasma-less chlorine trifluoride (ClF 3 ) gas is used as a halogen-based etching gas, and a pressure of 10 Pa or more and 90 kPa (abs) or less and a boiling point or more of each fluoride of the material
  • the first dry etching process and the second dry etching process may be performed at a temperature less than 200 ° C.
  • the workpiece 1 containing at least one of silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) can be etched.
  • an insulating film may be formed on a line to be cut of the object to be processed.
  • at least one of silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and silicon nitride (SiN x) may be used as the material of the insulating film.
  • SiNx has a width in the composition ratio (x) centering on Si 3 N 4 in which the ratio (composition) of the number of atoms constituting the SiN compound is present as the chemical formula.
  • the value of x may be, for example, 1.0 or more and 1.5 or less.
  • the object to be processed includes the substrate body, the functional element, and the insulating film.
  • the material to be processed may include at least one of silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and silicon nitride (SiN x).
  • the first dry etching process and the second dry etching process may be performed in a state where anhydrous hydrogen fluoride (HF) is added to the halogen-based etching gas.
  • the etching gas in which anhydrous hydrogen fluoride (HF) is added to the halogen-based etching gas can etch silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and silicon nitride (SiN x). Therefore, the etching gas is in a state where anhydrous hydrogen fluoride (HF) is added to the halogen-based etching gas.
  • the material of the object to be processed is at least one of silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and silicon nitride (SiN x). May be included.
  • the first dry etching process and the second dry etching process may be performed in a state where anhydrous hydrogen fluoride (HF) is added to the halogen-based etching gas.
  • HF anhydrous hydrogen fluoride
  • the workpiece 1 including at least one of silicon dioxide (SiO 2 ), silicon oxynitride (SiON), and silicon nitride (SiN x) can be etched.
  • the pressure reduction process immediately before each dry etching process is performed.
  • the volume density of the gas molecules may be changed in a range of 10 times or more and 10000 times or less.
  • a TEG and an insulating film may be formed on a line to be cut of the object to be processed.
  • tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) is used as the TEG material
  • silicon dioxide (SiO 2 ) or nitrogen is used as the material of the insulating film.
  • silicon oxide (SiON) and silicon nitride (SiNx) may be used.
  • the material of the object to be processed is silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo), silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and nitrided It may contain at least one of silicon (SiN x).
  • silicon Si
  • tungsten W
  • titanium Ti
  • titanium nitride TiN
  • Mo molybdenum
  • silicon dioxide SiO 2
  • SiON silicon oxynitride
  • SiON silicon oxynitride
  • nitrided It may contain at least one of silicon (SiN x).
  • carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), methane trifluoride (CHF 3 ), hydrogen fluoride (HF), oxygen as plasma are used as etching gases.
  • At least one of (O 2 ) may be used, and the first dry etching process and the second dry etching process may be performed at a pressure of 10 Pa or more and 0.8 kPa (abs) or less and a temperature less than 200 ° C. .
  • This pressure is the pressure in the chamber.
  • This temperature is the temperature of the object to be processed.
  • silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo), silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and nitride as materials of a processing object Silicon (SiN x) is used. Since the pressure at the maximum output of the remote plasma is 0.8 KPa, the pressure is 0.8 kPa (abs) or less.
  • the material of the object to be processed is silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) ), Silicon dioxide (SiO 2 ), silicon oxynitride (SiON) and / or silicon nitride (SiN x).
  • silicon Si
  • tungsten W
  • titanium Ti
  • titanium nitride TiN
  • Mo molybdenum
  • Silicon dioxide SiO 2
  • silicon oxynitride SiON
  • SiN x silicon nitride
  • SiN x silicon nitride
  • At least one of (O 2 ) may be used, and the first dry etching process and the second dry etching process may be performed at a pressure of 10 Pa or more and 0.8 kPa (abs) or less and a temperature less than 200 ° C. .
  • the first dry etching process and the second dry etching process may be performed at a pressure of 10 Pa or more and 0.8 kPa (abs) or less and a temperature less than 200 ° C.
  • Si silicon
  • tungsten (W) titanium
  • TiN titanium nitride
  • Mo molybdenum
  • silicon dioxide SiO 2
  • SiON silicon oxynitride
  • SiN x silicon nitride
  • an aluminum film and TEG may be formed on a line to be cut of the object to be processed.
  • aluminum (Al) is used as the material of the aluminum film
  • at least one of tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo) is used as the material of TEG.
  • the material of the object to be processed may include at least one of aluminum (Al), silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo). .
  • at least one of chlorine (Cl 2 ), hydrogen bromide (HBr), hydrogen chloride (HCl) and boron trichloride (BCl 3 ) of plasma is used as an etching gas, 10 Pa
  • the first dry etching process and the second dry etching process may be performed at a pressure of at least 0.8 kPa (abs) and a temperature of less than 200 ° C. This pressure is the pressure in the chamber. This temperature is the temperature of the object to be processed.
  • the material of the object to be processed is aluminum (Al), silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) And / or molybdenum (Mo).
  • the step of forming the groove at least one of chlorine (Cl 2 ), hydrogen bromide (HBr), hydrogen chloride (HCl) and boron trichloride (BCl 3 ) of plasma is used as an etching gas, and 10 Pa or more and 0.
  • the first dry etching process and the second dry etching process may be performed at a pressure of 8 kPa (abs) or less and a temperature less than 200 ° C. Thereby, it is possible to etch a workpiece including at least one of aluminum (Al), silicon (Si), tungsten (W), titanium (Ti), titanium nitride (TiN) and molybdenum (Mo).
  • the pressure reduction process immediately before each dry etching process The pressure fluctuation may be changed to a range of 10% or more and 100% or less.
  • the pressure of the substrate installation space is one of the discharge pressures while the pressure of the gas discharge space is maintained constant. It may be changed in the range of not less than 10 and not more than 1 / 10,000.

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
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PCT/JP2018/026851 2017-07-20 2018-07-18 切断加工方法 Ceased WO2019017367A1 (ja)

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US16/632,291 US11380586B2 (en) 2017-07-20 2018-07-18 Cutting method
KR1020207004266A KR20200029541A (ko) 2017-07-20 2018-07-18 절단 가공 방법
DE112018003719.3T DE112018003719B8 (de) 2017-07-20 2018-07-18 Schneideverfahren
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US11972955B2 (en) * 2020-05-29 2024-04-30 Resonac Corporation Dry etching method, method for manufacturing semiconductor element, and cleaning method
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JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置

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JP5264383B2 (ja) 2008-09-17 2013-08-14 東京エレクトロン株式会社 ドライエッチング方法
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JP2006040914A (ja) * 2004-07-22 2006-02-09 Matsushita Electric Ind Co Ltd 半導体ウェハの分割方法及び分割装置

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DE112018003719T5 (de) 2020-04-02
DE112018003719B4 (de) 2025-01-02
SG11202000308TA (en) 2020-02-27
TW201921468A (zh) 2019-06-01
US11380586B2 (en) 2022-07-05
DE112018003719B8 (de) 2025-02-27
CN110998798A (zh) 2020-04-10
JP6925900B2 (ja) 2021-08-25
KR20200029541A (ko) 2020-03-18
TWI760531B (zh) 2022-04-11
US20200365460A1 (en) 2020-11-19

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