JP2019021835A5 - - Google Patents
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- Publication number
- JP2019021835A5 JP2019021835A5 JP2017140872A JP2017140872A JP2019021835A5 JP 2019021835 A5 JP2019021835 A5 JP 2019021835A5 JP 2017140872 A JP2017140872 A JP 2017140872A JP 2017140872 A JP2017140872 A JP 2017140872A JP 2019021835 A5 JP2019021835 A5 JP 2019021835A5
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- halogen
- gas
- less
- etching gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000007789 gas Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 14
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 3
- YDCWBDWPPAHSOR-UHFFFAOYSA-N C1CCC1.F.F.F.F.F.F.F.F Chemical compound C1CCC1.F.F.F.F.F.F.F.F YDCWBDWPPAHSOR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- UNRFQJSWBQGLDR-UHFFFAOYSA-N methane trihydrofluoride Chemical compound C.F.F.F UNRFQJSWBQGLDR-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017140872A JP6957252B2 (ja) | 2017-07-20 | 2017-07-20 | 切断加工方法 |
| KR1020207004267A KR20200029542A (ko) | 2017-07-20 | 2018-07-18 | 절단 가공 방법 |
| PCT/JP2018/026852 WO2019017368A1 (ja) | 2017-07-20 | 2018-07-18 | 切断加工方法 |
| US16/632,298 US11482455B2 (en) | 2017-07-20 | 2018-07-18 | Cutting method of workpiece by forming reformed region and dry etching process |
| CN201880048615.8A CN110998797B (zh) | 2017-07-20 | 2018-07-18 | 切割加工方法 |
| DE112018003720.7T DE112018003720B4 (de) | 2017-07-20 | 2018-07-18 | Schneideverfahren |
| TW107124815A TWI755553B (zh) | 2017-07-20 | 2018-07-18 | 切斷加工方法（二） |
| SG11202000317TA SG11202000317TA (en) | 2017-07-20 | 2018-07-18 | Cutting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017140872A JP6957252B2 (ja) | 2017-07-20 | 2017-07-20 | 切断加工方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019021835A JP2019021835A (ja) | 2019-02-07 |
| JP2019021835A5 true JP2019021835A5 (enExample) | 2020-08-20 |
| JP6957252B2 JP6957252B2 (ja) | 2021-11-02 |
Family
ID=65015171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017140872A Active JP6957252B2 (ja) | 2017-07-20 | 2017-07-20 | 切断加工方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11482455B2 (enExample) |
| JP (1) | JP6957252B2 (enExample) |
| KR (1) | KR20200029542A (enExample) |
| CN (1) | CN110998797B (enExample) |
| DE (1) | DE112018003720B4 (enExample) |
| SG (1) | SG11202000317TA (enExample) |
| TW (1) | TWI755553B (enExample) |
| WO (1) | WO2019017368A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019201438B4 (de) * | 2019-02-05 | 2024-05-02 | Disco Corporation | Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats |
| CN116374947B (zh) * | 2023-06-02 | 2023-08-25 | 中国工程物理研究院电子工程研究所 | 一种熔石英悬臂梁-质量块结构及其加工方法 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0328350B1 (en) * | 1988-02-09 | 1999-04-28 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
| JPH0277579A (ja) * | 1988-06-06 | 1990-03-16 | Canon Inc | 堆積膜形成装置の洗浄方法 |
| US5536364A (en) * | 1993-06-04 | 1996-07-16 | Nippon Soken, Inc. | Process of plasma etching silicon |
| US6290864B1 (en) * | 1999-10-26 | 2001-09-18 | Reflectivity, Inc. | Fluoride gas etching of silicon with improved selectivity |
| JP2002151440A (ja) * | 2000-11-14 | 2002-05-24 | Sekisui Chem Co Ltd | ウェーハダイシング方法及びその装置 |
| JP2004359475A (ja) | 2003-06-02 | 2004-12-24 | Seiko Epson Corp | 光学素子の製造方法及び光学装置 |
| US7452786B2 (en) | 2004-06-29 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
| JP5041681B2 (ja) | 2004-06-29 | 2012-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20060032833A1 (en) * | 2004-08-10 | 2006-02-16 | Applied Materials, Inc. | Encapsulation of post-etch halogenic residue |
| CN101681822B (zh) | 2007-05-25 | 2012-06-13 | 浜松光子学株式会社 | 切断用加工方法 |
| JP5264383B2 (ja) | 2008-09-17 | 2013-08-14 | 東京エレクトロン株式会社 | ドライエッチング方法 |
| CN102308372A (zh) * | 2008-12-05 | 2012-01-04 | 新加坡科技研究局 | 晶片切割方法及其系统 |
| CA2690697A1 (en) * | 2009-01-27 | 2010-07-27 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
| WO2011021981A1 (en) * | 2009-08-17 | 2011-02-24 | Agency For Science, Technology And Research | Method of dicing a wafer |
| US20110061812A1 (en) | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| US9129904B2 (en) | 2011-06-15 | 2015-09-08 | Applied Materials, Inc. | Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch |
| JP5939752B2 (ja) | 2011-09-01 | 2016-06-22 | 株式会社ディスコ | ウェーハの分割方法 |
| JP6062287B2 (ja) * | 2013-03-01 | 2017-01-18 | 株式会社ディスコ | ウエーハの加工方法 |
| JP2016035965A (ja) * | 2014-08-01 | 2016-03-17 | リンテック株式会社 | 板状部材の分割装置および板状部材の分割方法 |
| JP2016207737A (ja) | 2015-04-17 | 2016-12-08 | 株式会社ディスコ | 分割方法 |
| JP2017162856A (ja) | 2016-03-07 | 2017-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
-
2017
- 2017-07-20 JP JP2017140872A patent/JP6957252B2/ja active Active
-
2018
- 2018-07-18 US US16/632,298 patent/US11482455B2/en active Active
- 2018-07-18 TW TW107124815A patent/TWI755553B/zh active
- 2018-07-18 KR KR1020207004267A patent/KR20200029542A/ko not_active Ceased
- 2018-07-18 DE DE112018003720.7T patent/DE112018003720B4/de active Active
- 2018-07-18 WO PCT/JP2018/026852 patent/WO2019017368A1/ja not_active Ceased
- 2018-07-18 SG SG11202000317TA patent/SG11202000317TA/en unknown
- 2018-07-18 CN CN201880048615.8A patent/CN110998797B/zh active Active
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