JP2005210087A5 - - Google Patents

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Publication number
JP2005210087A5
JP2005210087A5 JP2004359575A JP2004359575A JP2005210087A5 JP 2005210087 A5 JP2005210087 A5 JP 2005210087A5 JP 2004359575 A JP2004359575 A JP 2004359575A JP 2004359575 A JP2004359575 A JP 2004359575A JP 2005210087 A5 JP2005210087 A5 JP 2005210087A5
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JP
Japan
Prior art keywords
organic semiconductor
semiconductor film
forming
gate electrode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2004359575A
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English (en)
Japanese (ja)
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JP2005210087A (ja
JP4877869B2 (ja
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Publication date
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Priority to JP2004359575A priority Critical patent/JP4877869B2/ja
Priority claimed from JP2004359575A external-priority patent/JP4877869B2/ja
Publication of JP2005210087A publication Critical patent/JP2005210087A/ja
Publication of JP2005210087A5 publication Critical patent/JP2005210087A5/ja
Application granted granted Critical
Publication of JP4877869B2 publication Critical patent/JP4877869B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004359575A 2003-12-26 2004-12-13 有機半導体素子の作製方法 Expired - Fee Related JP4877869B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004359575A JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003434620 2003-12-26
JP2003434620 2003-12-26
JP2004359575A JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

Publications (3)

Publication Number Publication Date
JP2005210087A JP2005210087A (ja) 2005-08-04
JP2005210087A5 true JP2005210087A5 (enExample) 2007-11-08
JP4877869B2 JP4877869B2 (ja) 2012-02-15

Family

ID=34914336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004359575A Expired - Fee Related JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

Country Status (1)

Country Link
JP (1) JP4877869B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096129A (ja) * 2005-09-29 2007-04-12 Kyoto Univ 分子トランジスタおよびその製造方法、並びにそれを用いた不揮発性メモリおよび圧電センサ
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
JP2010199099A (ja) * 2009-02-20 2010-09-09 Univ Of Tokyo 有機電界効果トランジスタにおけるしきい値電圧の制御方法
JP2010199100A (ja) * 2009-02-20 2010-09-09 Univ Of Tokyo 有機半導体素子の作製法
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer

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