JP4877869B2 - 有機半導体素子の作製方法 - Google Patents

有機半導体素子の作製方法 Download PDF

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Publication number
JP4877869B2
JP4877869B2 JP2004359575A JP2004359575A JP4877869B2 JP 4877869 B2 JP4877869 B2 JP 4877869B2 JP 2004359575 A JP2004359575 A JP 2004359575A JP 2004359575 A JP2004359575 A JP 2004359575A JP 4877869 B2 JP4877869 B2 JP 4877869B2
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Prior art keywords
organic semiconductor
semiconductor film
baking
electrode
film
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JP2004359575A
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Japanese (ja)
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JP2005210087A (ja
JP2005210087A5 (enExample
Inventor
吉晴 平形
哲二 石谷
修次 深井
良太 今林
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2005210087A5 publication Critical patent/JP2005210087A5/ja
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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004359575A 2003-12-26 2004-12-13 有機半導体素子の作製方法 Expired - Fee Related JP4877869B2 (ja)

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JP2004359575A JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003434620 2003-12-26
JP2003434620 2003-12-26
JP2004359575A JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

Publications (3)

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JP2005210087A JP2005210087A (ja) 2005-08-04
JP2005210087A5 JP2005210087A5 (enExample) 2007-11-08
JP4877869B2 true JP4877869B2 (ja) 2012-02-15

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JP2004359575A Expired - Fee Related JP4877869B2 (ja) 2003-12-26 2004-12-13 有機半導体素子の作製方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096129A (ja) * 2005-09-29 2007-04-12 Kyoto Univ 分子トランジスタおよびその製造方法、並びにそれを用いた不揮発性メモリおよび圧電センサ
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
JP2010199099A (ja) * 2009-02-20 2010-09-09 Univ Of Tokyo 有機電界効果トランジスタにおけるしきい値電圧の制御方法
JP2010199100A (ja) * 2009-02-20 2010-09-09 Univ Of Tokyo 有機半導体素子の作製法
JP5733612B2 (ja) * 2011-03-08 2015-06-10 国立大学法人信州大学 有機半導体薄膜用材料、該材料を用いた有機半導体薄膜の形成方法および有機薄膜トランジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer

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JP2005210087A (ja) 2005-08-04

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