JP6896472B2 - ウエーハの研磨方法及び研磨装置 - Google Patents

ウエーハの研磨方法及び研磨装置 Download PDF

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Publication number
JP6896472B2
JP6896472B2 JP2017058159A JP2017058159A JP6896472B2 JP 6896472 B2 JP6896472 B2 JP 6896472B2 JP 2017058159 A JP2017058159 A JP 2017058159A JP 2017058159 A JP2017058159 A JP 2017058159A JP 6896472 B2 JP6896472 B2 JP 6896472B2
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Japan
Prior art keywords
polishing
wafer
unit
temperature
polishing pad
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Active
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JP2017058159A
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English (en)
Japanese (ja)
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JP2018160627A (ja
Inventor
俊一郎 廣沢
俊一郎 廣沢
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Disco Corp
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Disco Corp
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Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2017058159A priority Critical patent/JP6896472B2/ja
Priority to KR1020180028225A priority patent/KR102293098B1/ko
Priority to CN201810228241.XA priority patent/CN108621021A/zh
Priority to TW107109666A priority patent/TWI748069B/zh
Publication of JP2018160627A publication Critical patent/JP2018160627A/ja
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Publication of JP6896472B2 publication Critical patent/JP6896472B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2017058159A 2017-03-23 2017-03-23 ウエーハの研磨方法及び研磨装置 Active JP6896472B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017058159A JP6896472B2 (ja) 2017-03-23 2017-03-23 ウエーハの研磨方法及び研磨装置
KR1020180028225A KR102293098B1 (ko) 2017-03-23 2018-03-09 웨이퍼의 연마 방법 및 연마 장치
CN201810228241.XA CN108621021A (zh) 2017-03-23 2018-03-20 晶片的研磨方法和研磨装置
TW107109666A TWI748069B (zh) 2017-03-23 2018-03-21 晶圓研磨方法及研磨裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017058159A JP6896472B2 (ja) 2017-03-23 2017-03-23 ウエーハの研磨方法及び研磨装置

Publications (2)

Publication Number Publication Date
JP2018160627A JP2018160627A (ja) 2018-10-11
JP6896472B2 true JP6896472B2 (ja) 2021-06-30

Family

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JP2017058159A Active JP6896472B2 (ja) 2017-03-23 2017-03-23 ウエーハの研磨方法及び研磨装置

Country Status (4)

Country Link
JP (1) JP6896472B2 (zh)
KR (1) KR102293098B1 (zh)
CN (1) CN108621021A (zh)
TW (1) TWI748069B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111463141B (zh) * 2019-01-18 2023-05-02 芯恩（青岛）集成电路有限公司 一种提高晶圆探针台利用率的方法
CN110153885A (zh) * 2019-06-03 2019-08-23 西安奕斯伟硅片技术有限公司 一种研磨垫的处理方法和研磨垫的处理装置
CN110962022A (zh) * 2019-12-31 2020-04-07 浙江芯晖装备技术有限公司 一种抛光设备
JP2022064089A (ja) * 2020-10-13 2022-04-25 株式会社ディスコ ウェーハの加工方法、及び、加工装置
JP2023046631A (ja) * 2021-09-24 2023-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2023046628A (ja) * 2021-09-24 2023-04-05 株式会社Ｓｃｒｅｅｎホールディングス 研磨装置、基板処理装置および研磨方法
JP2023046630A (ja) * 2021-09-24 2023-04-05 株式会社Ｓｃｒｅｅｎホールディングス 研磨方法および基板処理装置
CN114161258A (zh) * 2021-12-10 2022-03-11 中国电子科技集团公司第四十六研究所 一种氧化镓晶片防解理的边缘磨削方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3672685B2 (ja) * 1996-11-29 2005-07-20 松下電器産業株式会社 研磨方法及び研磨装置
JP4149583B2 (ja) * 1998-09-10 2008-09-10 株式会社ディスコ 研削装置
JP2003243345A (ja) * 2002-02-18 2003-08-29 Disco Abrasive Syst Ltd 研磨装置
JP2004235201A (ja) * 2003-01-28 2004-08-19 Okamoto Machine Tool Works Ltd 基板の乾式化学機械研磨方法および乾式化学機械研磨装置
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP4631021B2 (ja) * 2004-03-12 2011-02-16 株式会社ディスコ 研磨装置
JP4733934B2 (ja) * 2004-06-22 2011-07-27 株式会社ディスコ ウエーハの加工方法
JP2006173462A (ja) * 2004-12-17 2006-06-29 Disco Abrasive Syst Ltd ウェーハの加工装置
JP4787063B2 (ja) * 2005-12-09 2011-10-05 株式会社荏原製作所 研磨装置及び研磨方法
JP5547472B2 (ja) * 2009-12-28 2014-07-16 株式会社荏原製作所 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置
JP5659033B2 (ja) * 2011-02-04 2015-01-28 株式会社東芝 半導体装置の製造方法
JP2012222311A (ja) * 2011-04-14 2012-11-12 Disco Abrasive Syst Ltd 板状物の研磨方法
TWI565559B (zh) * 2011-07-19 2017-01-11 荏原製作所股份有限公司 研磨裝置及方法
JP2013230509A (ja) * 2012-04-27 2013-11-14 Kyocera Corp 研磨装置
CN103050392B (zh) * 2013-01-10 2015-10-07 武汉电信器件有限公司 一种晶圆片的研磨抛光方法
JP2016072327A (ja) * 2014-09-29 2016-05-09 株式会社ディスコ 研磨装置
JP6541476B2 (ja) * 2015-07-02 2019-07-10 株式会社ディスコ ウェーハの研磨方法
JP6517108B2 (ja) * 2015-08-05 2019-05-22 株式会社ディスコ Ｃｍｐ研磨装置
KR102569631B1 (ko) * 2015-12-18 2023-08-24 주식회사 케이씨텍 화학 기계적 연마장치 및 그 제어방법
CN106002606A (zh) * 2016-05-16 2016-10-12 苏州辰轩光电科技有限公司 蓝宝石衬底抛光贴蜡机

Also Published As

Publication number Publication date
JP2018160627A (ja) 2018-10-11
TWI748069B (zh) 2021-12-01
KR102293098B1 (ko) 2021-08-23
TW201834787A (zh) 2018-10-01
KR20180108449A (ko) 2018-10-04
CN108621021A (zh) 2018-10-09

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