JP6840300B1 - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

Info

Publication number
JP6840300B1
JP6840300B1 JP2020553681A JP2020553681A JP6840300B1 JP 6840300 B1 JP6840300 B1 JP 6840300B1 JP 2020553681 A JP2020553681 A JP 2020553681A JP 2020553681 A JP2020553681 A JP 2020553681A JP 6840300 B1 JP6840300 B1 JP 6840300B1
Authority
JP
Japan
Prior art keywords
region
contact
well
silicon carbide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020553681A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021260853A1 (https=
Inventor
貴亮 富永
貴亮 富永
史郎 日野
史郎 日野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of JP6840300B1 publication Critical patent/JP6840300B1/ja
Publication of JPWO2021260853A1 publication Critical patent/JPWO2021260853A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2020553681A 2020-06-24 2020-06-24 炭化珪素半導体装置 Active JP6840300B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024835 WO2021260853A1 (ja) 2020-06-24 2020-06-24 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
JP6840300B1 true JP6840300B1 (ja) 2021-03-10
JPWO2021260853A1 JPWO2021260853A1 (https=) 2021-12-30

Family

ID=74845352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020553681A Active JP6840300B1 (ja) 2020-06-24 2020-06-24 炭化珪素半導体装置

Country Status (5)

Country Link
US (1) US12279447B2 (https=)
JP (1) JP6840300B1 (https=)
CN (1) CN115917755B (https=)
DE (1) DE112020007341T5 (https=)
WO (1) WO2021260853A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023042508A1 (ja) * 2021-09-15 2023-03-23 住友電気工業株式会社 炭化珪素半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116951A (ja) * 2003-10-10 2005-04-28 Toyota Central Res & Dev Lab Inc 半導体装置
JP2014150279A (ja) * 2009-02-24 2014-08-21 Mitsubishi Electric Corp 炭化珪素半導体装置
WO2016147352A1 (ja) * 2015-03-18 2016-09-22 三菱電機株式会社 電力用半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432332B2 (ja) 2003-03-06 2010-03-17 サンケン電気株式会社 半導体素子及びその製造方法
CN102473723B (zh) * 2009-07-15 2014-12-03 三菱电机株式会社 功率用半导体装置及其制造方法
JP5321377B2 (ja) 2009-09-11 2013-10-23 三菱電機株式会社 電力用半導体装置
JP4962665B2 (ja) 2010-04-06 2012-06-27 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびにパワーモジュール
DE112014006726T5 (de) * 2014-08-08 2017-03-23 Hitachi, Ltd. Halbleitervorrichtung, Leistungsmodul, Stromrichtvorrichtung, Fahrzeug und Schienenfahrzeug
JP6058228B1 (ja) * 2015-04-22 2017-01-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP6580270B2 (ja) * 2016-08-25 2019-09-25 三菱電機株式会社 炭化珪素半導体装置
WO2018055719A1 (ja) * 2016-09-23 2018-03-29 三菱電機株式会社 炭化珪素半導体装置
DE112018006467B4 (de) * 2017-12-19 2022-11-17 Mitsubishi Electric Corporation Siliciumcarbid-halbleiteranordnung und leistungswandler
DE112019007188B4 (de) * 2019-04-11 2025-10-16 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandlereinheit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116951A (ja) * 2003-10-10 2005-04-28 Toyota Central Res & Dev Lab Inc 半導体装置
JP2014150279A (ja) * 2009-02-24 2014-08-21 Mitsubishi Electric Corp 炭化珪素半導体装置
WO2016147352A1 (ja) * 2015-03-18 2016-09-22 三菱電機株式会社 電力用半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023042508A1 (ja) * 2021-09-15 2023-03-23 住友電気工業株式会社 炭化珪素半導体装置

Also Published As

Publication number Publication date
US12279447B2 (en) 2025-04-15
WO2021260853A1 (ja) 2021-12-30
DE112020007341T5 (de) 2023-04-06
CN115917755B (zh) 2025-08-01
US20230155021A1 (en) 2023-05-18
JPWO2021260853A1 (https=) 2021-12-30
CN115917755A (zh) 2023-04-04

Similar Documents

Publication Publication Date Title
JP7786512B2 (ja) 半導体装置
US7791135B2 (en) Insulated gate silicon carbide semiconductor device and method for manufacturing the same
JP4153811B2 (ja) 高耐圧半導体装置及びその製造方法
US6855970B2 (en) High-breakdown-voltage semiconductor device
JP3721172B2 (ja) 半導体装置
JP7643621B2 (ja) 半導体装置
JP2008177335A (ja) 炭化珪素絶縁ゲート型半導体装置。
JP5321377B2 (ja) 電力用半導体装置
JP7158317B2 (ja) 半導体装置
JPH08181313A (ja) 横型トレンチｍｉｓｆｅｔおよびその製造方法
TWI760453B (zh) 半導體裝置之製造方法
WO2014083771A1 (ja) 半導体素子及びその製造方法
CN104603949A (zh) 半导体器件
JP4488660B2 (ja) Ｍｏｓ電界効果トランジスタ
KR101875638B1 (ko) 반도체 소자 및 그 제조 방법
US20240170569A1 (en) Semiconductor device and method of manufacturing the same
JP2023060183A (ja) 半導体装置
JP5145694B2 (ja) ＳｉＣ半導体縦型ＭＯＳＦＥＴの製造方法。
JP6840300B1 (ja) 炭化珪素半導体装置
JP4948784B2 (ja) 半導体装置及びその製造方法
US20240162297A1 (en) Silicon carbide semiconductor device
JP7643179B2 (ja) 炭化珪素半導体装置
JP7647087B2 (ja) 半導体装置
US12495562B2 (en) Semiconductor device and fabrication method thereof
JP3649056B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201001

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20201001

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20201111

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210119

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210216

R150 Certificate of patent or registration of utility model

Ref document number: 6840300

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250