JPWO2021260853A1 - - Google Patents
Info
- Publication number
- JPWO2021260853A1 JPWO2021260853A1 JP2020553681A JP2020553681A JPWO2021260853A1 JP WO2021260853 A1 JPWO2021260853 A1 JP WO2021260853A1 JP 2020553681 A JP2020553681 A JP 2020553681A JP 2020553681 A JP2020553681 A JP 2020553681A JP WO2021260853 A1 JPWO2021260853 A1 JP WO2021260853A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/152—Source regions of DMOS transistors
- H10D62/153—Impurity concentrations or distributions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
- H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/024835 WO2021260853A1 (ja) | 2020-06-24 | 2020-06-24 | 炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP6840300B1 JP6840300B1 (ja) | 2021-03-10 |
| JPWO2021260853A1 true JPWO2021260853A1 (https=) | 2021-12-30 |
Family
ID=74845352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020553681A Active JP6840300B1 (ja) | 2020-06-24 | 2020-06-24 | 炭化珪素半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12279447B2 (https=) |
| JP (1) | JP6840300B1 (https=) |
| CN (1) | CN115917755B (https=) |
| DE (1) | DE112020007341T5 (https=) |
| WO (1) | WO2021260853A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117693824A (zh) * | 2021-09-15 | 2024-03-12 | 住友电气工业株式会社 | 碳化硅半导体器件 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4432332B2 (ja) | 2003-03-06 | 2010-03-17 | サンケン電気株式会社 | 半導体素子及びその製造方法 |
| JP4253558B2 (ja) * | 2003-10-10 | 2009-04-15 | 株式会社豊田中央研究所 | 半導体装置 |
| US8723259B2 (en) * | 2009-02-24 | 2014-05-13 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device |
| CN102473723B (zh) * | 2009-07-15 | 2014-12-03 | 三菱电机株式会社 | 功率用半导体装置及其制造方法 |
| JP5321377B2 (ja) | 2009-09-11 | 2013-10-23 | 三菱電機株式会社 | 電力用半導体装置 |
| JP4962665B2 (ja) | 2010-04-06 | 2012-06-27 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法、ならびにパワーモジュール |
| DE112014006726T5 (de) * | 2014-08-08 | 2017-03-23 | Hitachi, Ltd. | Halbleitervorrichtung, Leistungsmodul, Stromrichtvorrichtung, Fahrzeug und Schienenfahrzeug |
| JP6339288B2 (ja) * | 2015-03-18 | 2018-06-06 | 三菱電機株式会社 | 電力用半導体装置 |
| JP6058228B1 (ja) * | 2015-04-22 | 2017-01-11 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6580270B2 (ja) * | 2016-08-25 | 2019-09-25 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| WO2018055719A1 (ja) * | 2016-09-23 | 2018-03-29 | 三菱電機株式会社 | 炭化珪素半導体装置 |
| DE112018006467B4 (de) * | 2017-12-19 | 2022-11-17 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleiteranordnung und leistungswandler |
| DE112019007188B4 (de) * | 2019-04-11 | 2025-10-16 | Mitsubishi Electric Corporation | Halbleitereinheit und leistungswandlereinheit |
-
2020
- 2020-06-24 DE DE112020007341.6T patent/DE112020007341T5/de active Pending
- 2020-06-24 CN CN202080100712.4A patent/CN115917755B/zh active Active
- 2020-06-24 JP JP2020553681A patent/JP6840300B1/ja active Active
- 2020-06-24 WO PCT/JP2020/024835 patent/WO2021260853A1/ja not_active Ceased
- 2020-06-24 US US17/917,564 patent/US12279447B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US12279447B2 (en) | 2025-04-15 |
| WO2021260853A1 (ja) | 2021-12-30 |
| DE112020007341T5 (de) | 2023-04-06 |
| CN115917755B (zh) | 2025-08-01 |
| US20230155021A1 (en) | 2023-05-18 |
| JP6840300B1 (ja) | 2021-03-10 |
| CN115917755A (zh) | 2023-04-04 |
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