CN115917755B - 碳化硅半导体装置 - Google Patents

碳化硅半导体装置

Info

Publication number
CN115917755B
CN115917755B CN202080100712.4A CN202080100712A CN115917755B CN 115917755 B CN115917755 B CN 115917755B CN 202080100712 A CN202080100712 A CN 202080100712A CN 115917755 B CN115917755 B CN 115917755B
Authority
CN
China
Prior art keywords
region
contact
well
silicon carbide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080100712.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN115917755A (zh
Inventor
富永贵亮
日野史郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115917755A publication Critical patent/CN115917755A/zh
Application granted granted Critical
Publication of CN115917755B publication Critical patent/CN115917755B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H10D64/259—Source or drain electrodes being self-aligned with the gate electrode and having bottom surfaces higher than the interface between the channel and the gate dielectric
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202080100712.4A 2020-06-24 2020-06-24 碳化硅半导体装置 Active CN115917755B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024835 WO2021260853A1 (ja) 2020-06-24 2020-06-24 炭化珪素半導体装置

Publications (2)

Publication Number Publication Date
CN115917755A CN115917755A (zh) 2023-04-04
CN115917755B true CN115917755B (zh) 2025-08-01

Family

ID=74845352

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080100712.4A Active CN115917755B (zh) 2020-06-24 2020-06-24 碳化硅半导体装置

Country Status (5)

Country Link
US (1) US12279447B2 (https=)
JP (1) JP6840300B1 (https=)
CN (1) CN115917755B (https=)
DE (1) DE112020007341T5 (https=)
WO (1) WO2021260853A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117693824A (zh) * 2021-09-15 2024-03-12 住友电气工业株式会社 碳化硅半导体器件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021077A1 (ja) * 2014-08-08 2016-02-11 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両
CN107431090A (zh) * 2015-03-18 2017-12-01 三菱电机株式会社 电力用半导体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4432332B2 (ja) 2003-03-06 2010-03-17 サンケン電気株式会社 半導体素子及びその製造方法
JP4253558B2 (ja) * 2003-10-10 2009-04-15 株式会社豊田中央研究所 半導体装置
US8723259B2 (en) * 2009-02-24 2014-05-13 Mitsubishi Electric Corporation Silicon carbide semiconductor device
CN102473723B (zh) * 2009-07-15 2014-12-03 三菱电机株式会社 功率用半导体装置及其制造方法
JP5321377B2 (ja) 2009-09-11 2013-10-23 三菱電機株式会社 電力用半導体装置
JP4962665B2 (ja) 2010-04-06 2012-06-27 三菱電機株式会社 電力用半導体装置およびその製造方法、ならびにパワーモジュール
JP6058228B1 (ja) * 2015-04-22 2017-01-11 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP6580270B2 (ja) * 2016-08-25 2019-09-25 三菱電機株式会社 炭化珪素半導体装置
WO2018055719A1 (ja) * 2016-09-23 2018-03-29 三菱電機株式会社 炭化珪素半導体装置
DE112018006467B4 (de) * 2017-12-19 2022-11-17 Mitsubishi Electric Corporation Siliciumcarbid-halbleiteranordnung und leistungswandler
DE112019007188B4 (de) * 2019-04-11 2025-10-16 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandlereinheit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016021077A1 (ja) * 2014-08-08 2016-02-11 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両
CN107431090A (zh) * 2015-03-18 2017-12-01 三菱电机株式会社 电力用半导体装置

Also Published As

Publication number Publication date
US12279447B2 (en) 2025-04-15
WO2021260853A1 (ja) 2021-12-30
DE112020007341T5 (de) 2023-04-06
US20230155021A1 (en) 2023-05-18
JP6840300B1 (ja) 2021-03-10
JPWO2021260853A1 (https=) 2021-12-30
CN115917755A (zh) 2023-04-04

Similar Documents

Publication Publication Date Title
JP7786512B2 (ja) 半導体装置
US7855384B2 (en) SIC semiconductor device and method for manufacturing the same
JP3395473B2 (ja) 横型トレンチｍｉｓｆｅｔおよびその製造方法
CN110718546B (zh) 绝缘栅极半导体器件及其制造方法
US8269272B2 (en) Semiconductor device and method for manufacturing the same
US11094790B2 (en) Silicon carbide semiconductor device
JP7643621B2 (ja) 半導体装置
US11195946B2 (en) Method of manufacturing a silicon carbide semiconductor device with trench gate structure and vertical pn junction between body region and drift structure
JP2008177335A (ja) 炭化珪素絶縁ゲート型半導体装置。
KR101875638B1 (ko) 반도체 소자 및 그 제조 방법
US20240170569A1 (en) Semiconductor device and method of manufacturing the same
KR102852309B1 (ko) 전력 반도체 소자의 제조 방법 및 그에 따른 전력 반도체 소자
TWI836520B (zh) 半導體裝置及其製造方法
CN115917755B (zh) 碳化硅半导体装置
US20250120133A1 (en) Gate trench power semiconductor devices having deep support shields and methods of fabricating such device
JP7647087B2 (ja) 半導体装置
CN113871452B (zh) 半导体器件
JP7752780B2 (ja) 半導体装置およびその製造方法
US20260068198A1 (en) Method of fabricating semiconductor device
US20250380440A1 (en) Insulated gate semiconductor device
US20250241040A1 (en) Gate trench power semiconductor devices having deep trench shield connection patterns
JP2024048723A (ja) 半導体装置
KR20240175407A (ko) 전력 반도체 소자의 제조 방법 및 그에 따른 전력 반도체 소자
KR20240154288A (ko) SiC 전력 반도체 디바이스 및 그 제조 방법
CN120166766A (zh) 一种半导体器件及其制造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant