JP6805798B2 - 過電流検出回路、半導体装置、及び、電源装置 - Google Patents
過電流検出回路、半導体装置、及び、電源装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- 238000001514 detection method Methods 0.000 title claims description 39
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- 239000003990 capacitor Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 12
- 230000010355 oscillation Effects 0.000 description 11
- 239000008186 active pharmaceutical agent Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 8
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- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
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- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
- H02H3/087—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current for dc applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
- G01R19/16566—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533
- G01R19/16571—Circuits and arrangements for comparing voltage or current with one or several thresholds and for indicating the result not covered by subgroups G01R19/16504, G01R19/16528, G01R19/16533 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図1は、本発明の一実施形態に係る電源装置の構成例を示す回路図である。以下の実施形態においては、電源装置の一例として、電源電圧を昇圧するスイッチングレギュレーター(DC/DCコンバーター)について説明する。
図1に示すように、このスイッチングレギュレーターは、本発明の一実施形態に係る半導体装置100と、インダクターL1と、ダイオードD1と、抵抗R1及びR2と、キャパシターC1とを含んでいる。
D=τ/T
ただし、0≦D≦1である。
図2は、図1に示す半導体装置の出力電圧の時間的変化を示す波形図である。スイッチングトランジスターQN1がオフ状態であるときに、半導体装置の出力端子P3における出力電圧は、昇圧ノードN1における昇圧電源電圧VOUTと、ダイオードD1の順方向電圧VFとを用いて、(VOUT+VF)として表される。
VOP≒(R12/R11)(VREF2−VDD)+VREF2
従って、オペアンプ61aの出力電圧VOPは、基準電圧VREF2をオフセット電圧として、電源電圧VDDと基準電圧VREF2との差が反転増幅された電圧となる。
G≒(R21+R22)/R21
以上において、例えば、抵抗R12及びR22を可変抵抗として、オペアンプ61a及び62aの閉ループゲインを調整できるようにしても良い。
スイッチング制御回路50は、比較部63から供給される比較結果信号CMPに従って、スイッチングトランジスターQN1に流れる電流を制限する。例えば、スイッチング制御回路50は、比較結果信号CMPに従って、スイッチングトランジスターQN1を駆動する駆動信号DRVのデューティー比を変更するようにしても良い。それにより、過電流が検出された場合に、スイッチングトランジスターQN1がオン状態となる期間を短くして、スイッチングトランジスターQN1に流れる電流を制限することができる。
過電流検出回路60は、スイッチングトランジスターQN1がオフ状態のときに動作を停止するようにしても良い。そのために、過電流検出回路60は、スイッチングトランジスターQN1がオフ状態のときに、オペアンプ61a及び62a、及び、比較部63に対するバイアス電圧VBの供給を停止するマスク回路64を含んでいる。
スイッチングトランジスターQN1がスイッチングする際には、インダクターL1やスイッチングトランジスターQN1において大きなスイッチングノイズが発生する。そこで、第1の電源配線PL1は、半導体装置100の電源端子P1から離れた位置においてインダクターL1に電源電位VDDを供給するように配置されている。それにより、インダクターL1において発生するスイッチングノイズが半導体装置100の内部回路に及ぼす影響を低減することができる。
Claims (9)
- 電源電圧に従って変化する比較電圧を生成する比較電圧生成部と、
スイッチングトランジスターのドレイン・ソース間電圧を前記比較電圧と比較して比較結果信号を生成する比較部と、
を備え、
前記比較電圧生成部が、前記電源電圧に依存しない基準電圧と前記電源電圧との差を増幅することにより、前記比較電圧を生成する増幅回路を含む、電流検出回路。 - 前記比較電圧生成部が、前記電源電圧と前記基準電圧との差を反転増幅する反転増幅回路を含む、請求項1記載の過電流検出回路。
- 前記スイッチングトランジスターのドレイン・ソース間電圧を増幅する第2の増幅回路をさらに備え、
前記比較部が、前記第2の増幅回路によって増幅された前記スイッチングトランジスターのドレイン・ソース間電圧を前記比較電圧と比較する、請求項1又は2記載の過電流検出回路。 - 出力端子に接続されたドレインを有する前記スイッチングトランジスターと、
請求項1〜3のいずれか1項記載の過電流検出回路と、
前記比較結果信号に従って、前記スイッチングトランジスターに流れる電流を制限するスイッチング制御回路と、
を備える半導体装置。 - 前記スイッチング制御回路が、前記比較結果信号に従って、前記スイッチングトランジスターを駆動する駆動信号のデューティー比を変更する、請求項4記載の半導体装置。
- 前記過電流検出回路が、前記スイッチングトランジスターがオフ状態のときに動作を停止する、請求項4又は5記載の半導体装置。
- 第1導電型の半導体基板と、
前記半導体基板内に配置された第2導電型の第1のウェルと、
前記第1のウェル内に配置された第1導電型の第2のウェルと、
前記第2のウェル内に配置され、前記スイッチングトランジスターのドレイン及びソースを構成する複数の第2導電型の不純物領域と、
前記半導体基板に電気的に接続された第1の端子と、
前記第2のウェル及び前記スイッチングトランジスターのソースに電気的に接続された第2の端子と、
を備える、請求項4〜6のいずれか1項記載の半導体装置。 - 請求項4〜7のいずれか1項記載の半導体装置と、
第1の電源配線と前記半導体装置の前記出力端子との間に接続されたインダクターと、を備える電源装置。 - 前記半導体装置の前記出力端子に接続されたアノードを有するダイオードと、
前記ダイオードのカソードと第2の電源配線との間に接続されたキャパシターと、をさらに備える、請求項8記載の電源装置。
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JP2016245140A JP6805798B2 (ja) | 2016-12-19 | 2016-12-19 | 過電流検出回路、半導体装置、及び、電源装置 |
CN201711214645.5A CN108206630A (zh) | 2016-12-19 | 2017-11-28 | 过电流检测电路、半导体装置以及电源装置 |
US15/833,327 US10756530B2 (en) | 2016-12-19 | 2017-12-06 | Overcurrent detection circuit, semiconductor apparatus, and power supply apparatus |
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CN109596877B (zh) * | 2018-12-07 | 2021-01-12 | 深圳沃特检验集团有限公司 | 一种多功能检测装置 |
WO2021054027A1 (ja) * | 2019-09-19 | 2021-03-25 | ローム株式会社 | 電源装置 |
CN113241940B (zh) * | 2021-07-12 | 2021-09-10 | 上海芯龙半导体技术股份有限公司 | 一种过流保护电路及开关电源芯片 |
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JP2000299631A (ja) * | 1999-04-12 | 2000-10-24 | Yazaki Corp | 電源供給制御装置および電源供給制御方法 |
JP4142429B2 (ja) * | 2002-12-26 | 2008-09-03 | 古河電気工業株式会社 | 電流検出回路 |
JP2005261102A (ja) | 2004-03-12 | 2005-09-22 | Ricoh Co Ltd | スイッチングレギュレータ |
US7317355B2 (en) * | 2005-05-10 | 2008-01-08 | Texas Instruments Incorporated | Over-current detection for a power field-effect transistor (FET) |
JP4308183B2 (ja) * | 2005-10-12 | 2009-08-05 | パナソニック株式会社 | スイッチング電源制御用半導体装置およびスイッチング電源装置 |
JP4974653B2 (ja) * | 2006-11-21 | 2012-07-11 | ローム株式会社 | 昇圧型スイッチングレギュレータの制御回路、それを用いた昇圧型スイッチングレギュレータ、およびそれらを用いた電子機器 |
JP4896754B2 (ja) * | 2007-01-31 | 2012-03-14 | ローム株式会社 | 過電流保護回路及びこれを用いた電源装置 |
US7795846B2 (en) * | 2007-04-13 | 2010-09-14 | Linear Technology Corporation | Determining average output current in DC-DC converter |
JP2009136064A (ja) | 2007-11-29 | 2009-06-18 | Rohm Co Ltd | スイッチングレギュレータの制御回路、制御方法およびそれを利用したスイッチングレギュレータ |
JP5325452B2 (ja) * | 2008-04-28 | 2013-10-23 | ローム株式会社 | スイッチ駆動装置 |
JP2010068676A (ja) * | 2008-09-12 | 2010-03-25 | Shindengen Electric Mfg Co Ltd | スイッチング電源 |
US8232781B2 (en) * | 2008-12-23 | 2012-07-31 | Stmicroelectronics S.R.L. | Device for measuring the current flowing through a power transistor of a voltage regulator |
JP2010226788A (ja) * | 2009-03-19 | 2010-10-07 | Oki Semiconductor Co Ltd | 過電流検出回路および電源装置 |
JP5973801B2 (ja) * | 2012-06-19 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | スイッチングレギュレータ制御回路 |
JP2016001979A (ja) * | 2014-05-20 | 2016-01-07 | 株式会社リコー | スイッチングレギュレータ |
JPWO2015181991A1 (ja) * | 2014-05-30 | 2017-04-20 | 富士電機株式会社 | 充電器 |
JP5911614B1 (ja) * | 2015-01-19 | 2016-04-27 | 力晶科技股▲ふん▼有限公司 | 負基準電圧発生回路 |
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