JP6802666B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP6802666B2
JP6802666B2 JP2016160535A JP2016160535A JP6802666B2 JP 6802666 B2 JP6802666 B2 JP 6802666B2 JP 2016160535 A JP2016160535 A JP 2016160535A JP 2016160535 A JP2016160535 A JP 2016160535A JP 6802666 B2 JP6802666 B2 JP 6802666B2
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Prior art keywords
transistor
electrode
semiconductor layer
gate
semiconductor
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Expired - Fee Related
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JP2016160535A
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Japanese (ja)
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JP2017041635A5 (enExample
JP2017041635A (ja
Inventor
隆徳 松嵜
隆徳 松嵜
達也 大貫
達也 大貫
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
JP2016160535A 2015-08-21 2016-08-18 半導体装置および電子機器 Expired - Fee Related JP6802666B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015163532 2015-08-21
JP2015163532 2015-08-21

Related Child Applications (1)

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JP2020196858A Division JP7097940B2 (ja) 2015-08-21 2020-11-27 半導体装置

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JP2017041635A JP2017041635A (ja) 2017-02-23
JP2017041635A5 JP2017041635A5 (enExample) 2019-09-12
JP6802666B2 true JP6802666B2 (ja) 2020-12-16

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JP2016160535A Expired - Fee Related JP6802666B2 (ja) 2015-08-21 2016-08-18 半導体装置および電子機器
JP2020196858A Active JP7097940B2 (ja) 2015-08-21 2020-11-27 半導体装置
JP2022103430A Active JP7338003B2 (ja) 2015-08-21 2022-06-28 半導体装置
JP2023135352A Active JP7497504B2 (ja) 2015-08-21 2023-08-23 半導体装置
JP2024087007A Active JP7680605B2 (ja) 2015-08-21 2024-05-29 半導体装置
JP2025077743A Pending JP2025118809A (ja) 2015-08-21 2025-05-08 半導体装置

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JP2020196858A Active JP7097940B2 (ja) 2015-08-21 2020-11-27 半導体装置
JP2022103430A Active JP7338003B2 (ja) 2015-08-21 2022-06-28 半導体装置
JP2023135352A Active JP7497504B2 (ja) 2015-08-21 2023-08-23 半導体装置
JP2024087007A Active JP7680605B2 (ja) 2015-08-21 2024-05-29 半導体装置
JP2025077743A Pending JP2025118809A (ja) 2015-08-21 2025-05-08 半導体装置

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US (2) US9666606B2 (enExample)
JP (6) JP6802666B2 (enExample)

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US11750191B2 (en) 2017-10-10 2023-09-05 Tacho Holdings, Llc Three-dimensional logic circuit
US11228315B2 (en) 2017-10-10 2022-01-18 Tacho Holdings, Llc Three-dimensional logic circuit
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
CN111418066B (zh) * 2017-12-04 2024-06-11 索尼半导体解决方案公司 半导体存储器装置、电子设备和读取信息的方法
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US10916433B2 (en) 2018-04-06 2021-02-09 Applied Materials, Inc. Methods of forming metal silicide layers and metal silicide layers formed therefrom
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US11515873B2 (en) 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
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JP7355752B2 (ja) * 2018-10-05 2023-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
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CN109560141B (zh) * 2018-12-13 2020-09-25 合肥鑫晟光电科技有限公司 薄膜晶体管、发光装置及其制造方法
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