JP6748760B1 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP6748760B1 JP6748760B1 JP2019090633A JP2019090633A JP6748760B1 JP 6748760 B1 JP6748760 B1 JP 6748760B1 JP 2019090633 A JP2019090633 A JP 2019090633A JP 2019090633 A JP2019090633 A JP 2019090633A JP 6748760 B1 JP6748760 B1 JP 6748760B1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/148—Details of power up or power down circuits, standby circuits or recovery circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
120:入出力バッファ 130:アドレスレジスタ
140:コントローラ 150:ワード線選択回路
160:ページバッファ/センス回路 170:列選択回路
180:内部電圧発生回路 190:パワーオン検出部
200:パワーダウン検出部 210:低電力電圧検出部
220:高精度電圧検出回路 230:セレクタ
240:テスト制御回路
Claims (9)
- 供給電圧が一定電圧に降下したことを検出する第1の検出回路と、
第1の検出回路よりも高い検出精度を有し、供給電圧が一定電圧に降下したことを検出する第2の検出回路と、
内部回路がテスト状態であるとき第2の検出回路を選択し、内部回路がテスト状態でないとき第1の検出回路を選択する選択手段と、
第1の検出回路または第2の検出回路の検出結果に応答してパワーダウン動作を実行する実行手段と、
を有する半導体記憶装置。 - 前記第2の検出回路は、基準電圧を生成する基準電圧生成回路と、当該基準電圧と電源電圧とを比較する比較回路を含み、前記第1の検出回路は、基準電圧生成回路を含まない、請求項1に記載の半導体記憶装置。
- 前記内部回路は、テスト回路を含み、
前記選択手段は、前記テスト回路がテストを実行するとき第2の検出回路を選択し、前記テスト回路がテストを実行しないとき第1の検出回路を選択する、請求項1または2に記載の半導体記憶装置。 - 前記選択手段は、前記テスト回路から出力されるテスト信号に基づき第1の検出回路または第2の検出回路を選択する、請求項3に記載の半導体記憶装置。
- 前記選択手段は、外部からテストを開始させるためのコマンドが入力されたとき、第2の検出回路を選択する、請求項1に記載の半導体記憶装置。
- 前記選択手段は、テスト用パッドに信号が入力されたとき、第2の検出回路を選択する、請求項1に記載の半導体記憶装置。
- 第2の検出回路は、テスト用パッドから入力される基準電圧を利用して供給電圧が一定電圧に降下したことを検出する、請求項1に記載の半導体記憶装置。
- 前記テスト回路は、メモリセルアレイまたはメモリセルアレイの周辺回路のテストを実行する、請求項3に記載の半導体記憶装置。
- 前記第1および第2の検出回路が検出する電圧レベルは、パワーアップ検出回路が検出する電圧レベルよりも低く、かつCMOSの動作可能な電圧レベルよりも高い、請求項1ないし8いずれか1つに記載の半導体記憶装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019090633A JP6748760B1 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
KR1020200054460A KR102298789B1 (ko) | 2019-05-13 | 2020-05-07 | 반도체 기억장치 |
CN202010385612.2A CN111933210B (zh) | 2019-05-13 | 2020-05-09 | 半导体存储装置 |
US15/930,104 US10923209B2 (en) | 2019-05-13 | 2020-05-12 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019090633A JP6748760B1 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP6748760B1 true JP6748760B1 (ja) | 2020-09-02 |
JP2020187810A JP2020187810A (ja) | 2020-11-19 |
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JP2019090633A Active JP6748760B1 (ja) | 2019-05-13 | 2019-05-13 | 半導体記憶装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10923209B2 (ja) |
JP (1) | JP6748760B1 (ja) |
KR (1) | KR102298789B1 (ja) |
CN (1) | CN111933210B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116863986A (zh) * | 2023-09-05 | 2023-10-10 | 合肥康芯威存储技术有限公司 | 一种用于对存储设备进行分类的数据检测方法、装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6792667B2 (ja) * | 2019-05-13 | 2020-11-25 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
US11238923B2 (en) * | 2019-10-18 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device |
KR20220029118A (ko) * | 2020-09-01 | 2022-03-08 | 삼성전자주식회사 | 전압 생성 회로 및 이를 포함하는 메모리 장치 |
KR20220043302A (ko) * | 2020-09-29 | 2022-04-05 | 삼성전자주식회사 | 스토리지 장치의 리셋 방법 및 이를 수행하는 스토리지 장치 |
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-
2019
- 2019-05-13 JP JP2019090633A patent/JP6748760B1/ja active Active
-
2020
- 2020-05-07 KR KR1020200054460A patent/KR102298789B1/ko active IP Right Grant
- 2020-05-09 CN CN202010385612.2A patent/CN111933210B/zh active Active
- 2020-05-12 US US15/930,104 patent/US10923209B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116863986A (zh) * | 2023-09-05 | 2023-10-10 | 合肥康芯威存储技术有限公司 | 一种用于对存储设备进行分类的数据检测方法、装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102298789B1 (ko) | 2021-09-07 |
CN111933210A (zh) | 2020-11-13 |
US20200365224A1 (en) | 2020-11-19 |
KR20200131748A (ko) | 2020-11-24 |
JP2020187810A (ja) | 2020-11-19 |
US10923209B2 (en) | 2021-02-16 |
CN111933210B (zh) | 2023-03-14 |
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