JP6740983B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6740983B2
JP6740983B2 JP2017158817A JP2017158817A JP6740983B2 JP 6740983 B2 JP6740983 B2 JP 6740983B2 JP 2017158817 A JP2017158817 A JP 2017158817A JP 2017158817 A JP2017158817 A JP 2017158817A JP 6740983 B2 JP6740983 B2 JP 6740983B2
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Japan
Prior art keywords
insulating film
semiconductor substrate
shield
electrode
trench
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JP2017158817A
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English (en)
Japanese (ja)
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JP2019036689A (ja
JP2019036689A5 (enExample
Inventor
洋平 小田
洋平 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
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Denso Corp
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Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2017158817A priority Critical patent/JP6740983B2/ja
Priority to CN201880053573.7A priority patent/CN111052323B/zh
Priority to PCT/JP2018/029937 priority patent/WO2019039304A1/ja
Publication of JP2019036689A publication Critical patent/JP2019036689A/ja
Publication of JP2019036689A5 publication Critical patent/JP2019036689A5/ja
Priority to US16/774,518 priority patent/US20200168714A1/en
Application granted granted Critical
Publication of JP6740983B2 publication Critical patent/JP6740983B2/ja
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2017158817A 2017-08-21 2017-08-21 半導体装置 Active JP6740983B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017158817A JP6740983B2 (ja) 2017-08-21 2017-08-21 半導体装置
CN201880053573.7A CN111052323B (zh) 2017-08-21 2018-08-09 半导体装置及其制造方法
PCT/JP2018/029937 WO2019039304A1 (ja) 2017-08-21 2018-08-09 半導体装置およびその製造方法
US16/774,518 US20200168714A1 (en) 2017-08-21 2020-01-28 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017158817A JP6740983B2 (ja) 2017-08-21 2017-08-21 半導体装置

Publications (3)

Publication Number Publication Date
JP2019036689A JP2019036689A (ja) 2019-03-07
JP2019036689A5 JP2019036689A5 (enExample) 2019-11-28
JP6740983B2 true JP6740983B2 (ja) 2020-08-19

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JP2017158817A Active JP6740983B2 (ja) 2017-08-21 2017-08-21 半導体装置

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JP (1) JP6740983B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7753134B2 (ja) * 2022-03-02 2025-10-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
JP3551947B2 (ja) * 2001-08-29 2004-08-11 サンケン電気株式会社 半導体装置及びその製造方法
JP2005026279A (ja) * 2003-06-30 2005-01-27 Toyota Industries Corp 半導体装置
JP2006049455A (ja) * 2004-08-03 2006-02-16 Fuji Electric Device Technology Co Ltd トレンチ型絶縁ゲート半導体装置
JP2008085086A (ja) * 2006-09-27 2008-04-10 Toyota Industries Corp 半導体装置
JP5881100B2 (ja) * 2011-12-22 2016-03-09 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
JP6115050B2 (ja) * 2012-09-10 2017-04-19 トヨタ自動車株式会社 半導体装置

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