JP6729478B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6729478B2
JP6729478B2 JP2017088677A JP2017088677A JP6729478B2 JP 6729478 B2 JP6729478 B2 JP 6729478B2 JP 2017088677 A JP2017088677 A JP 2017088677A JP 2017088677 A JP2017088677 A JP 2017088677A JP 6729478 B2 JP6729478 B2 JP 6729478B2
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Japan
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layer
region
gate
electrode
adjacent
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JP2017088677A
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English (en)
Japanese (ja)
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JP2018186233A (ja
JP2018186233A5 (enExample
Inventor
正清 住友
正清 住友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
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Denso Corp
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Priority to JP2017088677A priority Critical patent/JP6729478B2/ja
Priority to PCT/JP2018/010274 priority patent/WO2018198575A1/ja
Publication of JP2018186233A publication Critical patent/JP2018186233A/ja
Publication of JP2018186233A5 publication Critical patent/JP2018186233A5/ja
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Publication of JP6729478B2 publication Critical patent/JP6729478B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2017088677A 2017-04-27 2017-04-27 半導体装置 Active JP6729478B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017088677A JP6729478B2 (ja) 2017-04-27 2017-04-27 半導体装置
PCT/JP2018/010274 WO2018198575A1 (ja) 2017-04-27 2018-03-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017088677A JP6729478B2 (ja) 2017-04-27 2017-04-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2018186233A JP2018186233A (ja) 2018-11-22
JP2018186233A5 JP2018186233A5 (enExample) 2019-08-08
JP6729478B2 true JP6729478B2 (ja) 2020-07-22

Family

ID=63919769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017088677A Active JP6729478B2 (ja) 2017-04-27 2017-04-27 半導体装置

Country Status (2)

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JP (1) JP6729478B2 (enExample)
WO (1) WO2018198575A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7085975B2 (ja) * 2018-12-17 2022-06-17 三菱電機株式会社 半導体装置
JP7279356B2 (ja) * 2018-12-19 2023-05-23 富士電機株式会社 半導体装置
JP7325627B2 (ja) * 2020-05-29 2023-08-14 三菱電機株式会社 半導体装置および電力機器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005184712A (ja) * 2003-12-24 2005-07-07 Alps Electric Co Ltd Ｓａｗディバイス、及びその製造方法
JP4575713B2 (ja) * 2004-05-31 2010-11-04 三菱電機株式会社 絶縁ゲート型半導体装置
JP6353804B2 (ja) * 2015-03-27 2018-07-04 株式会社 日立パワーデバイス 半導体装置及びそれを用いた電力変換装置

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Publication number Publication date
JP2018186233A (ja) 2018-11-22
WO2018198575A1 (ja) 2018-11-01

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