JP6721686B2 - 色素増感太陽電池およびその製造方法 - Google Patents
色素増感太陽電池およびその製造方法 Download PDFInfo
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- JP6721686B2 JP6721686B2 JP2018533561A JP2018533561A JP6721686B2 JP 6721686 B2 JP6721686 B2 JP 6721686B2 JP 2018533561 A JP2018533561 A JP 2018533561A JP 2018533561 A JP2018533561 A JP 2018533561A JP 6721686 B2 JP6721686 B2 JP 6721686B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
基板22(DSC200):青板ガラス基板(松浪硝子社製)、厚さ1mm、大きさ10mm×70mm
多孔質半導体層16A、16B:多孔質酸化チタン、酸化チタンペーストD/SP(Solaronix社製)を用いて、7mm×50mm×厚さ24μmの矩形、電気抵抗値(一般的な物性値として10-13〜10-14mho/cm)、色素A(商品名:Ruthenium620−1H3TBA(Solaronix社製)、色素の担持量は変化させた。
多孔質絶縁層36B:多孔質酸化ジルコニウム、酸化ジルコニウムペーストZr−Nanoxide Z/SP(Solaronix社製)を用いて、7.2mm×50.2mm×13μmの矩形
対極導電層28A、28B:炭素の微粒子の組成、色素の吸着量、厚さを適宜調整
電解液42:I3 -の濃度0.05M、溶媒アセトニトリル、厚さ50μm(ギャップ)
封止部52:紫外線硬化樹脂(型番:31X−101(スリーボンド社製))、シール幅1mm
実施例1〜6、比較例5、6 対極導電層:炭素の微粒子の平均粒径5.1μm(1/7(カーボンブラック、平均粒径30nm)、6/7(グラファイト微粒子、平均粒径6μm))
実施例1〜3 DSC100タイプ、対極導電層:24μm、色素担持量を変化(色素溶液への浸漬時間、4時間、8時間、16時間)
比較例1〜4 DSC100タイプ、対極導電層:24μm、色素吸着能力の低い炭素の微粒子(平均粒径2μmのグラファイト粒子)を用いて色素担持量を変化(色素溶液への浸漬時間、24時間、12時間、6時間)
実施例4〜6 DSC200タイプ、対極導電層の厚さ:24μm、42μm、80μm
比較例5、6 DSC200タイプ、対極導電層の厚さ:18μm、90μm
実施例7 DSC200タイプ、対極導電層の厚さ:24μm、炭素の微粒子の平均粒径3.1μm(1/2(カーボンブラック、平均粒径40nm)、1/2(グラファイト微粒子、平均粒径5μm))
比較例7 DSC200タイプ、対極導電層の厚さ:24μm、炭素の微粒子の平均粒径1.7μm(1/3(カーボンブラック、平均粒径40nm)>2/3(グラファイト微粒子、平均粒径5μm))
本願は、2016年8月12日に出願された特願2016−158766号に基づく優先権を主張するものであり、この出願の開示内容の全てを本願に援用する。
14 :透明導電層
14a :透明導電層
14b :透明導電層
16 :半導体微粒子
16A :多孔質半導体層
16B :多孔質半導体層
16p :細孔
24 :透明導電層
28A :対極導電層
28B :対極導電層
28L :微粒子
28S :微粒子
28p :細孔
36 :絶縁体微粒子
36B :多孔質絶縁層
36p :細孔
42 :電解液
52 :封止部
60a、60b、60c :容器
100、200 :色素増感太陽電池(DSC)
Claims (11)
- 色素が担持された多孔質半導体層を含む第1電極と、
前記第1電極の対極となる第2電極と、
前記第1電極と前記第2電極との間に充填された電解液とを備え、
前記第2電極は、炭素の微粒子を含み、前記多孔質半導体層に担持されている前記色素と同じまたは異なる色素が前記炭素の微粒子に担持された対極導電層を含み、
前記対極導電層に担持されている前記色素のモル数は、前記多孔質半導体層に担持されている前記色素のモル数の25%以上170%以下である、色素増感太陽電池。 - 前記炭素の微粒子は、比表面積が800g/m2以上のカーボンブラックを14質量%以上含む、請求項1に記載の色素増感太陽電池。
- 前記炭素の微粒子は、グラファイトの微粒子を含む、請求項2に記載の色素増感太陽電池。
- 前記炭素の微粒子に含まれる前記カーボンブラックと前記グラファイトの微粒子との質量比は、4:6以上6:4以下である、請求項3に記載の色素増感太陽電池。
- 前記炭素の微粒子の平均粒径は、2μm超5μm以下である、請求項3または4に記載の色素増感太陽電池。
- 透光性を有する第1基板と、前記第1基板と対向するように配置された第2基板とを有し、
前記第1電極は前記第1基板上に形成されており、前記第2電極は前記第2基板上に形成されており、前記第1電極と前記第2電極は互いに対向するように配置されている、請求項1から5のいずれかに記載の色素増感太陽電池。 - 色素が担持された多孔質半導体層を含む第1電極と、
前記第1電極の対極となる第2電極と、
前記第1電極と前記第2電極との間に充填された電解液と、
透光性を有する基板と、を備え、
前記第1電極および前記第2電極は、前記基板上に形成されており、多孔質絶縁層を介して互いに対向するように配置され、
前記第2電極は、炭素の微粒子を含み、前記多孔質半導体層に担持されている前記色素と同じまたは異なる色素が前記炭素の微粒子に担持された対極導電層を含み、
前記対極導電層に担持されている前記色素のモル数は、前記多孔質半導体層に担持されている前記色素のモル数の25%以上170%以下である、色素増感太陽電池。 - 前記対極導電層の厚さは、24μm以上80μm以下である、請求項1から7のいずれかに記載の色素増感太陽電池。
- 前記色素は、ルテニウム系金属錯体色素を含む、請求項1から8のいずれかに記載の色素増感太陽電池。
- 請求項7に記載の色素増感太陽電池の製造方法であって、
透光性を有する基板を用意する工程aと、
前記基板の上に、前記第1電極、前記第2電極および前記第1電極と前記第2電極の間に配置された多孔質絶縁層を形成する工程bと、
前記工程bの後に、前記第1電極および前記第2電極に同時に前記色素を担持させる工程cとを包含する、色素増感太陽電池の製造方法。 - 前記工程cは、前記第1電極、前記第2電極および前記多孔質絶縁層が形成された前記基板を前記色素を含む溶液に浸漬する工程を包含する、請求項10に記載の色素増感太陽電池の製造方法。
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US6677516B2 (en) * | 2001-01-29 | 2004-01-13 | Sharp Kabushiki Kaisha | Photovoltaic cell and process for producing the same |
JP4721643B2 (ja) * | 2004-01-21 | 2011-07-13 | 学校法人桐蔭学園 | 導電性被覆形成用組成物、それを用いた色素増感型光電池用電極及びその色素増感型光電池用電極を用いた光電池 |
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