JP6702767B2 - 直方体状の単結晶の製造方法および直方体状の単結晶、セラミックス、圧電素子、電子機器 - Google Patents

直方体状の単結晶の製造方法および直方体状の単結晶、セラミックス、圧電素子、電子機器 Download PDF

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JP6702767B2
JP6702767B2 JP2016052866A JP2016052866A JP6702767B2 JP 6702767 B2 JP6702767 B2 JP 6702767B2 JP 2016052866 A JP2016052866 A JP 2016052866A JP 2016052866 A JP2016052866 A JP 2016052866A JP 6702767 B2 JP6702767 B2 JP 6702767B2
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rectangular parallelepiped
single crystal
sodium
bismuth
niobate
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JP2016172686A5 (OSRAM
JP2016172686A (ja
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隆之 渡邉
隆之 渡邉
久保田　純
純 久保田
村上　俊介
俊介 村上
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Canon Inc
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Canon Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/08—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8561—Bismuth-based oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442—Carbonates

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016052866A 2015-03-17 2016-03-16 直方体状の単結晶の製造方法および直方体状の単結晶、セラミックス、圧電素子、電子機器 Active JP6702767B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015054051 2015-03-17
JP2015054051 2015-03-17

Publications (3)

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JP2016172686A JP2016172686A (ja) 2016-09-29
JP2016172686A5 JP2016172686A5 (OSRAM) 2020-02-06
JP6702767B2 true JP6702767B2 (ja) 2020-06-03

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US (1) US10461241B2 (OSRAM)
JP (1) JP6702767B2 (OSRAM)
CN (2) CN105986319A (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7057941B2 (ja) * 2017-08-04 2022-04-21 キヤノン株式会社 圧電材料、圧電素子、および電子機器
US11647677B2 (en) * 2018-06-08 2023-05-09 Canon Kabushiki Kaisha Piezoelectric ceramics, piezoelectric element, and electronic apparatus
CN111547821A (zh) * 2020-05-14 2020-08-18 淮南师范学院 一种高催化活性Ti/TiO2NT/NiO-C/PbO2电极及其电催化降解孔雀石绿的方法
KR20230104793A (ko) 2022-01-01 2023-07-11 엘지디스플레이 주식회사 압전 재료 조성물, 이를 제조하는 방법, 압전 소자, 및 압전 소자를 포함하는 장치
KR102780110B1 (ko) * 2022-12-14 2025-03-13 전남대학교산학협력단 알칼리할라이드계 화합물 및 할로겐화물을 이용한 결정성 파이버의 제조방법
KR102780109B1 (ko) * 2022-12-14 2025-03-13 전남대학교산학협력단 탄산염 또는 탄산염 유도체를 이용한 결정성 파이버의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5011227B2 (ja) * 2008-07-28 2012-08-29 日本碍子株式会社 （Ｌｉ，Ｎａ，Ｋ，Ｂｉ）（Ｎｂ，Ｔａ）Ｏ３系圧電材料及びその製造方法
CN101805021A (zh) 2009-02-17 2010-08-18 西北工业大学 一种片状铌酸钠微晶粉体的制备方法
JP5233778B2 (ja) * 2009-03-24 2013-07-10 株式会社デンソー 異方形状粉末及び結晶配向セラミックスの製造方法
JP5582281B2 (ja) * 2009-04-09 2014-09-03 堺化学工業株式会社 ニオブ酸アルカリ金属塩粒子の製造方法、およびニオブ酸アルカリ金属塩粒子
CN101575209A (zh) 2009-06-05 2009-11-11 武汉理工大学 一种厚度和径向尺寸可控的织构陶瓷铌酸盐模板材料及其制备方法
JP6016333B2 (ja) 2011-05-27 2016-10-26 キヤノン株式会社 ニオブ酸ナトリウム粉末、ニオブ酸ナトリウム粉末の製造方法、板状粒子、板状粒子の製造方法、配向セラミックスの製造方法
KR20140146200A (ko) 2012-04-16 2014-12-24 캐논 가부시끼가이샤 니오브산나트륨 분말, 그 제조 방법, 세라믹의 제조 방법, 및 압전 소자
KR101728255B1 (ko) * 2012-08-27 2017-04-18 캐논 가부시끼가이샤 압전 재료, 그것을 사용한 압전 소자 및 그 압전 소자를 사용한 전자 기기
CN104150535B (zh) 2014-06-04 2016-02-17 同济大学 一种合成大长径比片状铌酸钠粉体的方法

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CN111197180A (zh) 2020-05-26
CN105986319A (zh) 2016-10-05
US20160273125A1 (en) 2016-09-22
US10461241B2 (en) 2019-10-29
JP2016172686A (ja) 2016-09-29

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