JP6696480B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6696480B2
JP6696480B2 JP2017117217A JP2017117217A JP6696480B2 JP 6696480 B2 JP6696480 B2 JP 6696480B2 JP 2017117217 A JP2017117217 A JP 2017117217A JP 2017117217 A JP2017117217 A JP 2017117217A JP 6696480 B2 JP6696480 B2 JP 6696480B2
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JP
Japan
Prior art keywords
contact portion
conductive member
electrode
sealing resin
resin body
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Active
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JP2017117217A
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English (en)
Japanese (ja)
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JP2018160653A5 (enExample
JP2018160653A (ja
Inventor
英二 林
英二 林
領二 上瀧
領二 上瀧
知巳 奥村
知巳 奥村
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Denso Corp
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Denso Corp
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Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to CN201880015263.6A priority Critical patent/CN110383464B/zh
Priority to PCT/JP2018/003734 priority patent/WO2018173511A1/ja
Publication of JP2018160653A publication Critical patent/JP2018160653A/ja
Publication of JP2018160653A5 publication Critical patent/JP2018160653A5/ja
Priority to US16/527,543 priority patent/US10943859B2/en
Application granted granted Critical
Publication of JP6696480B2 publication Critical patent/JP6696480B2/ja
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    • H10W40/778
    • H10W70/65
    • H10W40/60
    • H10W70/421
    • H10W70/461
    • H10W70/60
    • H10W72/851
    • H10W74/00
    • H10W74/01
    • H10W74/127
    • H10W72/01308
    • H10W72/07351
    • H10W72/07354
    • H10W72/30
    • H10W72/347
    • H10W72/352
    • H10W72/381
    • H10W72/387
    • H10W72/59
    • H10W72/931
    • H10W72/9415
    • H10W72/944
    • H10W72/952
    • H10W74/114
    • H10W90/734
    • H10W90/736

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2017117217A 2017-03-22 2017-06-14 半導体装置 Active JP6696480B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880015263.6A CN110383464B (zh) 2017-03-22 2018-02-05 半导体装置
PCT/JP2018/003734 WO2018173511A1 (ja) 2017-03-22 2018-02-05 半導体装置
US16/527,543 US10943859B2 (en) 2017-03-22 2019-07-31 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017056316 2017-03-22
JP2017056316 2017-03-22

Publications (3)

Publication Number Publication Date
JP2018160653A JP2018160653A (ja) 2018-10-11
JP2018160653A5 JP2018160653A5 (enExample) 2019-03-14
JP6696480B2 true JP6696480B2 (ja) 2020-05-20

Family

ID=63796723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017117217A Active JP6696480B2 (ja) 2017-03-22 2017-06-14 半導体装置

Country Status (3)

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US (1) US10943859B2 (enExample)
JP (1) JP6696480B2 (enExample)
CN (1) CN110383464B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6696480B2 (ja) 2017-03-22 2020-05-20 株式会社デンソー 半導体装置
JP6737221B2 (ja) * 2017-04-11 2020-08-05 株式会社デンソー 電動パワーステアリング制御装置および電子ユニット。
JP2020145271A (ja) * 2019-03-05 2020-09-10 トヨタ自動車株式会社 半導体装置
JP7120150B2 (ja) * 2019-05-14 2022-08-17 株式会社デンソー 半導体モジュール
DE112021001570T5 (de) * 2020-03-11 2022-12-22 Rohm Co., Ltd. Halbleiterbauteil
JP7452233B2 (ja) * 2020-05-01 2024-03-19 株式会社デンソー 半導体装置および電力変換装置
JP2022125445A (ja) * 2021-02-17 2022-08-29 三菱電機株式会社 半導体装置及びその製造方法
JPWO2022209609A1 (enExample) * 2021-03-31 2022-10-06
JP7528867B2 (ja) * 2021-06-03 2024-08-06 株式会社デンソー 半導体装置とその製造方法
US20230352360A1 (en) * 2022-04-29 2023-11-02 Macom Technology Solutions Holdings, Inc. Diamond-metal composite high power device packages
JP2024134134A (ja) * 2023-03-20 2024-10-03 株式会社東芝 半導体装置
WO2025115059A1 (ja) * 2023-11-27 2025-06-05 三菱電機株式会社 回路基板、半導体装置、回路基板の製造方法および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP2002231883A (ja) 2001-01-31 2002-08-16 Hitachi Ltd パワー半導体モジュールおよびそれを用いた電力変換装置
JP2005311019A (ja) 2004-04-21 2005-11-04 Hitachi Ltd 半導体パワーモジュール
JP2008147266A (ja) * 2006-12-07 2008-06-26 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2011082305A (ja) * 2009-10-06 2011-04-21 Renesas Electronics Corp 半導体装置およびその製造方法
CN104603937B (zh) 2012-09-07 2018-03-20 日立汽车系统株式会社 半导体装置及其制造方法
JP2016029676A (ja) 2012-12-19 2016-03-03 富士電機株式会社 半導体装置
JP5983700B2 (ja) * 2013-12-09 2016-09-06 株式会社デンソー 半導体装置およびその製造方法、複合成形体
JP6578900B2 (ja) 2014-12-10 2019-09-25 株式会社デンソー 半導体装置及びその製造方法
JP2016143846A (ja) * 2015-02-05 2016-08-08 三菱電機株式会社 半導体装置
DE112016007241B4 (de) * 2016-09-20 2021-08-19 Mitsubishi Electric Corporation Halbleitervorrichtung
US11437333B2 (en) * 2016-12-30 2022-09-06 Texas Instruments Incorporated Packaged semiconductor device with a reflow wall
JP6696480B2 (ja) 2017-03-22 2020-05-20 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
US20190355656A1 (en) 2019-11-21
CN110383464B (zh) 2023-06-30
JP2018160653A (ja) 2018-10-11
US10943859B2 (en) 2021-03-09
CN110383464A (zh) 2019-10-25

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