US10262953B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
US10262953B2
US10262953B2 US16/028,869 US201816028869A US10262953B2 US 10262953 B2 US10262953 B2 US 10262953B2 US 201816028869 A US201816028869 A US 201816028869A US 10262953 B2 US10262953 B2 US 10262953B2
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semiconductor device
heat dissipating
dissipating unit
region
front surface
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US16/028,869
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US20190067214A1 (en
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Kenichiro Sato
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Assigned to FUJI ELECTRIC CO., LTD. reassignment FUJI ELECTRIC CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SATO, KENICHIRO
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    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

Definitions

  • the present invention relates to a semiconductor device.
  • semiconductor devices containing semiconductor elements such as IGBTs (insulated gate bipolar transistors) and power MOSFETs (metal oxide semiconductor field effect transistors) are being used as power converters, for example.
  • This type of semiconductor device includes such semiconductor elements and a substrate that includes an insulated plate and a plurality of circuit patterns formed on the front surface of the insulated plate, the semiconductor elements being arranged in the circuit patterns. Furthermore, in order to cool the heat generated by the semiconductor elements during operation, the substrate of the semiconductor device is disposed on a heat dissipating unit such as a heat sink made of copper, for example.
  • a composite type heat dissipating unit is used in which the main constituent is aluminum, which is advantageous in terms of cost and processability in addition to heat dissipating characteristics, and in which copper is embedded in the arrangement region of the substrate.
  • Using this type of composite heat dissipating unit makes it possible to maintain uniform heat dissipating characteristics while making the device lightweight (see Patent Document 1).
  • Patent Document 1 Japanese Translation of PCT International Application No. 2013-500580
  • a sealing member an epoxy resin, for example
  • the present invention was made in view of the above and aims at providing a semiconductor device with which a sealing member can be prevented from peeling from a heat dissipating unit.
  • the present disclosure provides a semiconductor device, including: a semiconductor element; a substrate that includes an insulated plate and a circuit layer on a front surface of the insulated plate, the semiconductor element being disposed on a front surface of the circuit layer; a heat dissipating unit that includes a primary part made of a first metal material and an embedded part that is embedded in a front surface of the primary part and that is made of a second metal material, a front surface of the heat dissipating unit having a mounting region on which a rear surface of the substrate is mounted so as to dissipate heat generated by the semiconductor element; and a sealing member that seals the semiconductor element, the substrate, and a sealed region of the front surface of the heat dissipating unit that is defined as an exposed region that is adjacent to the mounting region and that is not covered by the substrate, wherein the embedded part is formed in an area in the front surface of the heat diss
  • the sealed region may surround the mounting region in a plan view.
  • the area in which the embedded part is formed extends beyond the sealed region and includes an entirety of the mounting region in the plan view.
  • the linear expansion coefficient of the second metal material may be greater than or equal to 10.5 ppm/° C. and is less than or equal to 22.5 ppm/° C.
  • the linear expansion coefficient of the second metal material may be preferably greater than or equal to 16.0 ppm/° C. and is less than or equal to 18.0 ppm/° C.
  • the second metal material may be copper, a copper alloy, or a metal matrix composite material.
  • the metal matrix composite material may be a composite material containing silicon carbide.
  • the metal matrix composite material may contain one of aluminum and magnesium in addition to the silicon carbide.
  • the area in which the embedded part is formed may extend beyond the sealed region and include a part of the mounting region in a plan view so that an inner edge of said area is positioned inside the mounting region on which the substrate is mounted in the plan view.
  • a linear expansion coefficient of the sealing member may be greater than or equal to 14.0 ppm/° C. and is less than or equal to 18.0 ppm/° C.
  • the sealing member may include an epoxy resin and a filler contained in the epoxy resin.
  • the filler may be silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.
  • the first metal material may be aluminum or an aluminum alloy.
  • the aforementioned semiconductor device may further include a case having sidewalls that are mounted, via a bonding material, on a peripheral region of the front surface of the heat dissipating unit that surrounds the sealed region.
  • the area in which the embedded part is formed may extend beyond the sealed region and include a part of the peripheral region in a plan view so that an outer edge of said area is positioned inside the peripheral region on which the sidewalls of the case are mounted in the plan view.
  • a metal film or an oxide film may be formed in the peripheral region of the heat dissipating unit.
  • the embedded part may have a plurality of recesses in the front surface of the heat dissipating unit in the sealed region.
  • the primary part of the heat dissipating unit may include: a flat plate part having a flat plate shape, the mounting region and the sealed region being defined in a front surface of the flat plate part; and a fin part having a plurality of fins extending downwardly, formed on a rear surface of the flat plate part.
  • FIG. 2 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 1.
  • FIG. 3 is a table showing statuses of peeling of a sealing member from an embedded part based on a difference of the linear expansion coefficient of the sealing member and the linear expansion coefficient of the embedded part in the semiconductor device of Embodiment 1.
  • FIG. 4 shows a side cross-sectional view of a semiconductor device of Embodiment 2.
  • FIG. 5 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 2.
  • FIG. 7 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 3.
  • FIG. 8 shows a side cross-sectional view of a semiconductor device of Embodiment 4.
  • FIG. 9 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 4.
  • FIG. 10 shows a side cross-sectional view of a semiconductor device of Embodiment 5.
  • FIG. 12 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 6.
  • FIG. 13 shows a side cross-sectional view of a semiconductor device of Embodiment 7.
  • FIG. 14 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 7.
  • FIG. 15 shows a side cross-sectional view of a semiconductor device of Embodiment 8.
  • Embodiment 1 First, a semiconductor device according to Embodiment 1 will be described with reference to FIG. 1 and FIG. 2 .
  • the semiconductor device 10 contains the semiconductor unit 20 and the heat dissipating unit 30 .
  • the metal layer 21 b is formed of a metal such as aluminum, iron, silver, or copper, which have excellent thermal conductivity, or an alloy containing at least one of these metals.
  • the circuit layer 21 c contains a plurality of circuit patterns and is made of a material with excellent conductivity. Examples of this type of material include aluminum, copper, or an alloy containing at least one of these metals.
  • the insulated plate 21 a has a rectangular shape in a plan view, for example.
  • the metal layer 21 b also has a rectangular shape in a plan view, with a smaller area than the insulated plate 21 a. Therefore, the ceramic circuit substrate 21 has a rectangular shape, for example.
  • the semiconductor elements 22 a, 22 b contain a switching element such as an IGBT or power MOSFET made of silicon or silicon carbide, for example. These semiconductor elements 22 a, 22 b each have a drain electrode (or collector electrode) on the rear surface thereof as the main electrode, and a gate electrode and source electrode (or emitter electrode) on the front surface thereof as the main electrode, for example.
  • the semiconductor elements 22 a, 22 b contain a diode such as an SBD (Schottky barrier diode) or FWD (freewheeling diode) as necessary. These semiconductor elements 22 a, 22 b each have a cathode electrode on the rear surface thereof as the main electrode, and an anode electrode on the front surface thereof as the main electrode. The semiconductor elements 22 a, 22 b each have a rear surface thereof bonded on a prescribed circuit pattern (not shown) of the circuit layer 21 c.
  • SBD Schottky barrier diode
  • FWD freewheeling diode
  • the semiconductor elements 22 a, 22 b are bonded to the circuit layer 21 c via solder 24 b, 24 c.
  • the sealing member 25 contains a thermosetting resin such as a maleimide-modified epoxy resin, maleimide-modified phenol resin, or maleimide resin, and a filler contained in the thermosetting resin, for example.
  • a thermosetting resin such as a maleimide-modified epoxy resin, maleimide-modified phenol resin, or maleimide resin
  • a filler contained in the thermosetting resin for example.
  • An example of this type of sealing member 25 includes an epoxy resin and a filler in the epoxy resin such as silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.
  • the linear expansion coefficient of this example of the sealing member 25 is 14.0 ppm/° C. to 18.0 ppm/° C. inclusive, in accordance with the amount of the filler. Note that the linear expansion coefficient is an average linear expansion coefficient at 20° C. to 100° C. inclusive.
  • the sealing member 25 is solidified while sealing the ceramic circuit substrate 21 , semiconductor elements 22 a, 22 b, and connection
  • the heat dissipating unit 30 of the semiconductor device 10 has a flat plate part 31 , a fin part 32 , and an embedded part 33 .
  • the heat dissipating unit 30 has set on the front surface thereof a mounting region A where the ceramic circuit substrate 21 is disposed via the solder 24 a, and a sealed region B adjacent to the mounting region A, surrounding the mounting region A, and on which the sealing member 25 is bonded.
  • This type of heat dissipating unit 30 has, on the front surface thereof, the flat plate part 31 , which has the mounting region A, and the embedded part 33 , which is embedded in the sealed region B.
  • the flat plate part 31 is made of a first metal material
  • the embedded part 33 is made of a second metal material with a smaller linear expansion coefficient than the first metal material.
  • the sealed region B is dug in the flat plate part 31 .
  • the thickness of the flat plate part 31 is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
  • a material of the primary part is selected to have the volumetric mass density that is less than the volumetric mass density of the embedded part 33 .
  • the volumetric mass density when the primary part is aluminum or an aluminum alloy is 2.7 g/cm 3 .
  • the volumetric mass density when the embedded part 33 is copper or a copper alloy is 8.9 g/cm 3
  • the volumetric mass density is 2.8 g/cm 3 .
  • the primary part makes up 90% of the volume
  • the embedded part 33 makes up 10%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 made completely of copper is 100, then the weight of the heat dissipating unit 30 when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 is made of copper or a copper alloy would be 37. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 , and the volume of the primary part is sufficiently larger than the volume of the embedded part 33 , which makes it possible to suppress an increase in weight of the heat dissipating unit 30 .
  • the weight when the heat dissipating unit 30 is made completely of aluminum is 30, which allows the device to be made lightweight.
  • the sealing member 25 will peel.
  • the weight when the heat dissipating unit 30 is made completely of an MMC is 31, which also allows the device to be made lightweight.
  • an MMC is expensive, and thus increases manufacturing costs.
  • the mounting region A of the front surface of the heat dissipating unit 30 be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21 .
  • the thickness of the plating is 10 ⁇ m to 100 ⁇ m inclusive.
  • the ceramic circuit substrate 21 When manufacturing this type of semiconductor device 10 , first the ceramic circuit substrate 21 , semiconductor elements 22 a and 22 b, connection terminal 23 , and external connection terminals 29 a and 29 b are prepared. Then, the heat dissipating unit 30 is prepared, which has the flat plate part 31 , fin part 32 , and embedded part 33 embedded in the sealed region B dug around the mounting region A on the front surface of the flat plate part 31 .
  • the embedded part 33 of the heat dissipating unit 30 corresponding to the shape of the sealed region B dug into the flat plate part 31 is formed in advance.
  • the prepared embedded part 33 is set in the dug sealed region B, and then the embedded part 33 and the flat plate part 31 are integrated by friction stir welding.
  • the ceramic circuit substrate 21 is disposed on the mounting region A of the flat plate part 31 via solder paste or a solder plate. Furthermore, the semiconductor elements 22 a and 22 b, which are connected by the connection terminal 23 , are each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate. The external connection terminals 29 a and 29 b are also each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate.
  • the heat dissipating unit 30 on the mounting region A of which the ceramic circuit substrate 21 having the semiconductor elements 22 a, 22 b (and external connection terminals 29 a, 29 b ) adhered thereto is adhered, is set in a prescribed mold, and a sealing material in a melted state is injected into the mold.
  • the injected sealing material is sufficiently solidified (thus forming the sealing member 25 ), and the mold is removed.
  • FIG. 3 will be used to describe statuses of peeling of the sealing member 25 from the embedded part 33 depending on the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 .
  • FIG. 3 is a table showing the statuses of peeling of the sealing member from the embedded part based on the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 in the semiconductor device of Embodiment 1.
  • the table shows the cases in which the embedded part 33 is copper, aluminum, and a composite material of aluminum and silicon carbide while the sealing member 25 has three types of linear expansion coefficients (14 ppm/° C., 16 ppm/° C., 18 ppm/° C.).
  • the peeling status is indicated for the differences in the linear expansion coefficients between the sealing member 25 and embedded part 33 in these cases.
  • results in FIG. 3 are from observing the peeling status via an ultrasonic microscope (scanning acoustic tomography (SAT)) by performing a thermal cycling test for each combination of the sealing member 25 and embedded part 33 .
  • the thermal cycling test changes the temperature in a range between ⁇ 40° C. to 125° C. and repeats this 100 times.
  • the semiconductor device 10 has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. Furthermore, the semiconductor device 10 has the heat dissipating unit 30 having the flat plate part 31 and fin part 32 made of the first metal material and the embedded part 33 made of the second metal material and embedded in the front surface of the flat plate part 31 , and the sealing member 25 that seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21 , and the front surface of the heat dissipating unit 30 .
  • the front surface of the heat dissipating unit 30 includes the mounting region A on which the ceramic circuit substrate 21 is disposed, and the sealed region B adjacent to the mounting region A and sealed with the sealing member 25 .
  • the embedded part 33 is formed in at least the sealed region B, the linear expansion coefficient of the second metal material is less than the linear expansion coefficient of the first metal material, and the absolute difference of the linear expansion coefficient of the second metal material and the linear expansion coefficient of the sealing member is less than or equal to 25% of a value of the linear expansion coefficient of the sealing member.
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 in the sealed region B of the heat dissipating unit 30 sealed by the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 , which makes it possible to suppress peeling of the sealed member 25 in the sealed region B of the heat dissipating unit 30 .
  • the primary part which makes up a large portion of the heat dissipating unit 30 , is made of aluminum or an aluminum alloy, and the embedded part 33 is made of copper or a copper alloy (or an MMC), and thus the heat dissipating unit can be made lightweight.
  • the semiconductor device 10 makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 2 an example will be described in which, in the semiconductor device 10 of Embodiment 1, a contact surface (boundary) between the side face of the dug portion of the flat plate part 31 of the heat dissipating unit 30 and the side face of the embedded part 33 is positioned below the ceramic circuit substrate 21 .
  • a semiconductor device 10 a of Embodiment 2 will be described using FIG. 4 and FIG. 5 .
  • FIG. 4 shows a side cross-sectional view of a semiconductor device of Embodiment 2.
  • FIG. 5 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 2.
  • FIG. 5 shows a plan view of the front surface of a heat dissipating unit 30 a (on the side where the semiconductor unit 20 is placed).
  • Embodiment 2 the same reference characters are given to configurations that are the same as Embodiment 1, and explanations of these configurations may be omitted.
  • the semiconductor device 10 a contains the semiconductor unit 20 and the heat dissipating unit 30 a.
  • the heat dissipating unit 30 a has a flat plate part 31 a, the fin part 32 , and an embedded part 33 a.
  • the heat dissipating unit 30 a has set on the front surface thereof the mounting region A (the inner side of the dashed line in FIG. 5 ) where the ceramic circuit substrate 21 is disposed via the solder 24 a, and the sealed region B (the outer side of the dashed line in FIG. 5 ) surrounding the mounting region A and on which the sealing member 25 is bonded.
  • the flat plate part 31 a an outer peripheral portion of the mounting region A and the sealed region B are dug together.
  • the thickness of the mounting region A of the flat plate part 31 a is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive.
  • the dig depth of the outer peripheral portion of the mounting region A and the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
  • the flat plate part 31 a also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof.
  • the fin part 32 is formed close to the rear surface of the flat plate part 31 a corresponding to the mounting region A.
  • the first metal material forming this type of flat plate part 31 a and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
  • the embedded part 33 a is embedded in the outer peripheral portion of the mounting region A dug in the front surface of the flat plate part 31 a and also embedded in the sealed region B.
  • the front surface of the mounting region A of the flat plate part 31 a and the front surface of the embedded part 33 a are horizontal.
  • the second metal material forming this type of embedded part 33 a is copper or a copper alloy, or an MMC, similar to Embodiment 1.
  • a contact surface 33 a 1 on the mounting region A side which is the boundary (inner side boundary) between the side face of the embedded part 33 a and the side face of the dug portion of the flat plate part 31 a, is positioned below the ceramic circuit substrate 21 .
  • the volumetric mass density of this type of primary part is less than the volumetric mass density of the embedded part 33 a, at 2.7 g/cm 3 (aluminum or aluminum alloy).
  • the volumetric mass density of the embedded part 33 a is 8.9 g/cm 3 (copper or copper alloy) or 2.8 g/cm 3 (MMC).
  • the primary part makes up 75% of the volume
  • the embedded part 33 a makes up 25%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 a made completely of copper is 100, then the weight of the heat dissipating unit 30 a when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 a is made of copper or a copper alloy would be 48. In this case, the weight of the heat dissipating unit 30 a when the embedded part 33 a is made of an MMC is 45.
  • the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 a, and the volume of the primary part is greater than the volume of the embedded part 33 a, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 a.
  • the mounting region A of the front surface of the heat dissipating unit 30 a be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21 .
  • the thickness of the plating is 10 ⁇ m to 100 ⁇ m inclusive.
  • This type of semiconductor device 10 a can also be manufactured in a similar manner to Embodiment 1.
  • the semiconductor device 10 a has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 a also has the heat dissipating unit 30 a.
  • the heat dissipating unit 30 a includes the flat plate part 31 a and the fin part 32 made of aluminum or an aluminum alloy.
  • the semiconductor device includes the embedded part 33 a, which is embedded in the front surface of the flat plate part 31 a and made of copper or a copper alloy (or an MMC).
  • the sealing member 25 seals the semiconductor elements 22 a, 22 b, the ceramic circuit substrate 21 , and the front surface of the heat dissipating unit 30 a.
  • the front surface of the heat dissipating unit 30 a of the semiconductor device 10 a includes the mounting region A on which the ceramic circuit substrate 21 is disposed, and the sealed region B adjacent to the mounting region A and sealed with the sealing member 25 .
  • the embedded part 33 a is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is less than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the contact surface 33 a 1 between the embedded part 33 a and the mounting region A side of the flat plate part 31 a of the semiconductor device 10 a is positioned below the ceramic circuit substrate 21 .
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 a of the heat dissipating unit 30 a sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 . This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 a of the heat dissipating unit 30 a.
  • the primary part which makes up a large portion of the heat dissipating unit 30 a, is made of aluminum or an aluminum alloy, and the embedded part 33 a is made of copper or a copper alloy.
  • the heat dissipating unit 30 a is made lightweight.
  • a difference in the linear expansion coefficients of the flat plate part 31 a and of the embedded part 33 a would cause deformations, warping, and gaps in the contact surface 33 a 1 .
  • the contact surface 33 a 1 between the flat plate part 31 a and the embedded part 33 a is positioned below the ceramic circuit substrate 21 . Due to this, stress generated on the contact surface 33 a 1 resulting from deformations or the like does not progress to the sealing member 25 , thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 a.
  • the unevenness in the contact surface 33 a 1 between the flat plate part 31 a and the embedded part 33 a increases the bonding area of the solder 24 a, thus improving bonding strength between the mounting region A of the flat plate part 31 a and the ceramic circuit substrate 21 .
  • the semiconductor device 10 a makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 3 a semiconductor device in which semiconductor elements, a ceramic circuit substrate, etc. are stored in a case will be described with reference to FIG. 6 and FIG. 7 .
  • FIG. 6 is a side cross-sectional view of the semiconductor device of Embodiment 3
  • FIG. 7 is a plan view of a heat dissipating unit of the semiconductor device of Embodiment 3.
  • FIG. 7 shows a plan view of the front surface of the heat dissipating unit 30 b (on the side where a semiconductor unit 20 a is placed).
  • Embodiment 3 the same reference characters are given to configurations that are the same as Embodiments 1 and 2, and explanations of these configurations may be omitted.
  • the semiconductor device 10 b contains the semiconductor unit 20 a and the heat dissipating unit 30 b.
  • the semiconductor unit 20 a has a ceramic circuit substrate 21 (substrate), semiconductor elements 22 a and 22 b bonded to the front surface of the ceramic circuit substrate 21 , and a connection terminal 23 electrically connecting the main electrodes of the semiconductor elements 22 a and 22 b.
  • the semiconductor unit 20 a also has a case 26 for storing these, and bonding wires 27 a, 27 b for electrically connecting internal connection parts 26 a 1 , 26 b 1 provided in the case 26 with the circuit layer 21 c of the ceramic circuit substrate 21 .
  • Cross-sections of sidewalls of the case 26 are depicted in FIG. 6 . In the semiconductor device 10 b, these are sealed inside the case 26 by the sealing member 25 .
  • the case 26 is provided on the outer periphery of the ceramic circuit substrate 21 etc. and has a box shape that surrounds the lateral sides of the ceramic circuit substrate 21 etc. and that has an opening 26 c formed in the center thereof in a plan view.
  • This type of case 26 is made of a thermoplastic resin.
  • the resin can be polyphenylene sulfide (PPS), a polybutylene terephthalate (PBT) resin, a polybutylene succinate (PBS) resin, a polyamide (PA) resin, an acrylonitrile butadiene styrene (ABS) resin, or the like.
  • this type of case 26 is bonded to the heat dissipating unit 30 b via a bonding material 28 of the case 26 .
  • This type of bonding material 28 may be coated on the bottom of the case 26 , or coated on an peripheral region (arrangement region) C on the front surface of the flat plate part 31 b of the heat dissipating unit 30 b where the case 26 is bonded.
  • the coating of the bonding material 28 can be done with any known method, such as a screen printing method using a mask, a dispensing method using a syringe, or the like.
  • the bonding material 28 is an epoxy resin-based or silicone rubber-based curable adhesive, for example.
  • connection terminals of the case 26 are insert-molded, with the internal connection parts 26 a 1 , 26 b 1 that are respective ends of the connection terminals being disposed on an inner stepped part, and external connection parts 26 a 2 , 26 b 2 that are respectively the other ends of the connection terminals being disposed on the upper surface on the outer side.
  • prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 are electrically connected by the bonding wires 27 a, 27 b to the internal connection parts 26 a 1 , 26 b 1 .
  • the semiconductor elements 22 a, 22 b can output/input signals to/from outside from the external connection parts 26 a 2 , 26 b 2 via the circuit layer 21 c, bonding wires 27 a, 27 b, and internal connection parts 26 a 1 , 26 b 1 .
  • the sealing member 25 includes an epoxy resin and a filler in the epoxy resin such as silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.
  • the linear expansion coefficient of this type of sealing member 25 is 14.0 ppm/° C. to 18.0 ppm/° C. inclusive, based on the amount of the filler.
  • the sealing member 25 can also be gel.
  • This type of sealing member 25 is injected inside the case 26 from the opening 26 c in the case 26 .
  • the sealing member 25 injected into the case 26 seals the ceramic circuit substrate 21 , semiconductor elements 22 a, 22 b, connection terminal 23 , and bonding wires 27 a, 27 b on the heat dissipating unit 30 b.
  • the heat dissipating unit 30 b of the semiconductor device 10 b has the flat plate part 31 b, fin part 32 , and embedded part 33 b.
  • the heat dissipating unit 30 b has set on the front surface thereof the mounting region A where the ceramic circuit substrate 21 is disposed via the solder 24 a, the sealed region B surrounding the mounting region A and on which the sealing member 25 is bonded, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded.
  • the mounting region A and the sealed region B are dug together.
  • the thickness of the peripheral region C of the flat plate part 31 b is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive.
  • the dig depth of the outer periphery of the mounting region A and the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
  • the flat plate part 31 b also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof.
  • the fin part 32 is also formed close to the rear surface of the flat plate part 31 b corresponding to the mounting region A.
  • the first metal material forming this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
  • the embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal.
  • the second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
  • the volumetric mass density of this type of primary part is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm 3 (aluminum or aluminum alloy).
  • the volumetric mass density of the embedded part 33 b is 8.9 g/cm 3 (copper or copper alloy) or 2.8 g/cm 3 (MMC).
  • the primary part makes up 67% of the volume, and the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 b when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53.
  • the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 b.
  • the ceramic circuit substrate 21 , semiconductor elements 22 a and 22 b, and connection terminal 23 are prepared. Then, the heat dissipating unit 30 b is prepared, which has the flat plate part 31 b, fin part 32 , and embedded part 33 b that is embedded in the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b.
  • the embedded part 33 b of the heat dissipating unit 30 b corresponding to the shape of the mounting region A and sealed region B dug into the flat plate part 31 b is formed in advance, the embedded part 33 b is set in the dug mounting region A and sealed region B, and then the embedded part 33 b is integrated with the flat plate part 31 b by friction stir welding.
  • the ceramic circuit substrate 21 is disposed on the mounting region A of the embedded part 33 b of the heat dissipating unit 30 b via solder paste or a solder plate.
  • the semiconductor elements 22 a, 22 b are also each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate.
  • the connection terminal 23 is also disposed on the main electrodes of the semiconductor elements 22 a, 22 b via solder paste or a solder plate.
  • solder paste or solder plate is heated and melted in this state, and the melted solder is solidified. This adheres the ceramic circuit substrate 21 to the mounting region A of the embedded part 33 b of the heat dissipating unit 30 b via the solder 24 a, and adheres the semiconductor elements 22 a, 22 b on the ceramic circuit substrate 21 via the solder 24 b, 24 c.
  • the main electrodes of the semiconductor elements 22 a, 22 b are electrically connected by the connection terminal 23 .
  • the bonding material 28 is coated on the bottom surface of the case 26 or on the peripheral region C on the front surface of the flat plate part 31 b, and then the case 26 is attached to the peripheral region C on the front surface of the flat plate part 31 b. At this time, the ceramic circuit substrate 21 etc. is stored in the opening 26 c in the case 26 and enclosed.
  • a bonding tool (not shown) is used to electrically connect prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 with the internal connection parts 26 a 1 , 26 b 1 of the case 26 via the bonding wires 27 a, 27 b.
  • a sealing material in a melted state is injected into the opening 26 c in the case 26 storing the ceramic circuit substrate 21 , semiconductor elements 22 a, 22 b, etc. until the opening 26 c is filled.
  • the injected sealing material is sufficiently solidified (thus forming the sealing member 25 ).
  • the semiconductor device 10 b has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 b also has the heat dissipating unit 30 b.
  • the heat dissipating unit 30 b includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy.
  • the heat dissipating unit 30 b is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC).
  • the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21 , and front surface of the heat dissipating unit 30 b.
  • the front surface of the heat dissipating unit 30 b of the semiconductor device 10 b includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25 , and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded.
  • the embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 . This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b.
  • the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted.
  • This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 b has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 and 10 a of Embodiments 1 and 2.
  • the semiconductor device 10 b makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 4 an example will be described in which, in the semiconductor device 10 b of Embodiment 3, the contact surface (boundary) between the flat plate part 31 b and the embedded part 33 b of the heat dissipating unit 30 b is positioned below the case.
  • a semiconductor device 10 c of Embodiment 4 will be described using FIG. 8 and FIG. 9 .
  • FIG. 8 shows a side cross-sectional view of the semiconductor device of Embodiment 4.
  • FIG. 9 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 4.
  • FIG. 9 shows a plan view of the front surface of the heat dissipating unit 30 b (on the side where a semiconductor unit 20 b is placed).
  • Embodiment 4 the same reference characters are given to configurations that are the same as Embodiments 1 to 3, and explanations of these configurations may be omitted.
  • the semiconductor device 10 c contains the semiconductor unit 20 b and the heat dissipating unit 30 b.
  • the semiconductor unit 20 b has the ceramic circuit substrate 21 (substrate), semiconductor elements 22 a and 22 b bonded to the front surface of the ceramic circuit substrate 21 , and the connection terminal 23 electrically connecting the main electrodes of the semiconductor elements 22 a and 22 b.
  • the semiconductor unit 20 b also has a case 36 for storing these, and bonding wires 27 a, 27 b for electrically connecting the internal connection parts 26 a 1 , 26 b 1 provided in the case 36 with the circuit layer 21 c of the ceramic circuit substrate 21 .
  • Cross-sections of sidewalls of the case 36 are depicted in FIG. 8 . In the semiconductor device 10 c, these are sealed inside the case 36 by the sealing member 25 .
  • the case 36 is provided on the outer periphery of the ceramic circuit substrate 21 etc. and has a box shape that surrounds the lateral sides of the ceramic circuit substrate 21 etc. and that has an opening 36 c formed in the center thereof in a plan view.
  • the opening 36 c in the case 36 has a narrower opening area than the opening 26 c in the case 26 of Embodiment 3. In other words, the thickness (in the left-right direction in the drawing) of the case 36 is greater than that of the case 26 of Embodiment 3.
  • This type of case 36 is also made of a thermoplastic resin.
  • the resin can be polyphenylene sulfide, a polybutylene terephthalate resin, a polybutylene succinate resin, a polyamide resin, an acrylonitrile butadiene styrene resin, or the like.
  • this type of case 36 is also bonded on the peripheral region C of the heat dissipating unit 30 b via the bonding material 28 .
  • This type of bonding material 28 may be coated on the bottom of the case 36 , or coated on the peripheral region C of the front surface of the flat plate part 31 b of the heat dissipating unit 30 b.
  • the coating of the bonding material 28 can be done with any known method, such as a screen printing method using a mask, a dispensing method using a syringe, or the like.
  • connection terminals of the case 36 are insert-molded, with the internal connection parts 26 a 1 , 26 b 1 that are respective ends of the connection terminals being disposed on the inner stepped part, and the external connection parts 26 a 2 , 26 b 2 that are respectively the other ends of the connection terminals being disposed on the upper surface on the outer side.
  • prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 are electrically connected by the bonding wires 27 a, 27 b to the internal connection parts 26 a 1 , 26 b 1 .
  • the semiconductor elements 22 a, 22 b can output/input signals to/from outside from the external connection parts 26 a 2 , 26 b 2 via the circuit layer 21 c, bonding wires 27 a, 27 b, and internal connection parts 26 a 1 , 26 b 1 .
  • the heat dissipating unit 30 b has the flat plate part 31 b, fin part 32 , and embedded part 33 b.
  • the volumetric mass density of this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm 3 (aluminum or aluminum alloy).
  • the volumetric mass density of the embedded part 33 b is 8.9 g/cm 3 (copper or copper alloy) or 2.8 g/cm 3 (MMC).
  • the primary part makes up 55% of the volume
  • the embedded part 33 b makes up 45%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 b when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 62.
  • Scribing could also be performed instead of the plating treatment in order to prevent flowing of the solder 24 a.
  • scribing creates dust, and there is a risk that the dust could cause the semiconductor device 10 c to malfunction.
  • the plating treatment does not cause this type of problem.
  • the semiconductor device 10 c has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 c also has the heat dissipating unit 30 b.
  • the heat dissipating unit 30 b includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy.
  • the heat dissipating unit 30 b is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC).
  • the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21 , and front surface of the heat dissipating unit 30 b.
  • the front surface of the heat dissipating unit 30 b of the semiconductor device 10 c includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25 , and the peripheral region C surrounding the outer side of the sealed region B and on which the case 36 is bonded.
  • the embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • Inner wall surfaces 36 c 1 , 36 c 2 of the opening 36 c in the case 36 of the semiconductor device 10 c are positioned on the inner side from a contact surface 33 a 2 , which is the boundary (outer boundary) between the embedded part 33 b and flat plate part 31 b. In other words, the contact surface 33 a 2 of the embedded part 33 b is positioned below the case 36 .
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 . This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b.
  • the case 36 is thicker than the case 26 of the semiconductor device 10 b (see FIG. 6 ) in Embodiment 3. Meanwhile, it is also possible, in the semiconductor device 10 c, to widen the area (the length in the left-right direction of the drawing) of the embedded part 33 b of the semiconductor device 10 b in Embodiment 3 so as to position the contact surface 33 a 2 between the embedded part 33 b and flat plate part 31 b below the case 26 .
  • the primary part would make up 55% of the volume, and the embedded part 33 b would make up 45%, for example.
  • the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 62. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 b.
  • the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is disposed.
  • This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 c has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
  • a difference in the linear expansion coefficients of the flat plate part 31 b and of the embedded part 33 b would cause deformations, warping, and gaps in the contact surface 33 a 2 .
  • the contact surface 33 a 2 between the flat plate part 31 b and the embedded part 33 b is positioned below the case 36 . Due to this, stress generated on the contact surface 33 a 2 resulting from deformations or the like does not progress to the sealing member 25 , thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 c.
  • the unevenness in the contact surface 33 a 2 between the flat plate part 31 b and the embedded part 33 b increases the bonding area of the bonding material 28 , thus improving bonding strength between the peripheral region C of the flat plate part 31 b and the case 36 .
  • the semiconductor device 10 c makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 5 an example is described in which a case is attached to the semiconductor device 10 of Embodiment 1.
  • Embodiment 5 the same reference characters are given to configurations that are the same as Embodiments 1 to 4, and explanations of these configurations may be omitted.
  • the embedded part 33 c is embedded inside the sealed region B that is dug into the front surface of the flat plate part 31 c. At this time, the front surface of the flat plate part 31 c and the front surface of the embedded part 33 c are horizontal.
  • the second metal material forming this type of embedded part 33 c is copper or a copper alloy, or an MMC, similar to Embodiment 1.
  • the volumetric mass density of this type of flat plate part 31 c and fin part 32 is less than the volumetric mass density of the embedded part 33 c, at 2.7 g/cm 3 (aluminum or aluminum alloy).
  • the volumetric mass density of the embedded part 33 c is 8.9 g/cm 3 (copper or copper alloy) or 2.8 g/cm 3 (MMC).
  • the primary part makes up 90% of the volume
  • the embedded part 33 c makes up 10%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 c made completely of copper is 100, then the weight of the heat dissipating unit 30 c when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 c is made of copper or a copper alloy would be 37.
  • This type of semiconductor device 10 d can also be manufactured in a similar manner to Embodiment 3.
  • the semiconductor device 10 d has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 d also has the heat dissipating unit 30 c.
  • the heat dissipating unit 30 c includes the flat plate part 31 c and the fin part 32 made of aluminum or an aluminum alloy.
  • the heat dissipating unit 30 c is also provided with the embedded part 33 c, which is embedded in the front surface of the flat plate part 31 c and made of copper or a copper alloy (or an MMC).
  • the embedded part 33 c is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference in the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 c of the heat dissipating unit 30 c sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 . This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 c of the heat dissipating unit 30 c.
  • a semiconductor device 10 e of Embodiment 6 will be described using FIG. 11 and FIG. 12 .
  • FIG. 11 shows a side cross-sectional view of the semiconductor device of Embodiment 6.
  • FIG. 12 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 6.
  • FIG. 12 shows a plan view of the front surface of the heat dissipating unit 30 d (on the side where the semiconductor unit 20 a is placed).
  • Embodiment 6 the same reference characters are given to configurations that are the same as Embodiments 1 to 5, and explanations of these configurations may be omitted.
  • the outer periphery of the mounting region A, the sealed region B, and the outer periphery of the peripheral region C are dug (together referred to as the region between a contact surface 33 d 1 and contact surface 33 d 2 in FIG. 12 ).
  • the thickness of the portion of the flat plate part 31 d that is not dug is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive.
  • the dig depth of the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
  • the flat plate part 31 d also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof.
  • the fin part 32 is formed close to the rear surface of the flat plate part 31 d corresponding to the mounting region A.
  • the first metal material forming this type of flat plate part 31 d and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
  • the contact surface 33 d 1 of the boundary (inner edge) on the mounting region A side between the embedded part 33 d and the flat plate part 31 d is positioned below the ceramic circuit substrate 21 .
  • the contact surface 33 d 2 of the boundary (outer edge) on the peripheral region C side between the embedded part 33 d and the flat plate part 31 d is positioned below the case 26 .
  • the primary part makes up 75% of the volume
  • the embedded part 33 d makes up 25%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 d made completely of copper is 100, then the weight of the heat dissipating unit 30 d when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 d is made of copper or a copper alloy would be 48. In this case, the weight of the heat dissipating unit 30 d when the embedded part 33 d is made of an MMC is 45.
  • the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 d, and the volume of the primary part is greater than the volume of the embedded part 33 d, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 d.
  • the mounting region A of the front surface of the heat dissipating unit 30 d be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21 .
  • the thickness of the plating is 10 ⁇ m to 100 ⁇ m inclusive.
  • a plating treatment on the peripheral region C of this type of heat dissipating unit 30 d with a material having excellent corrosion resistance.
  • a material having excellent corrosion resistance examples include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, or an alloy containing at least one of these.
  • An oxide film may also be formed by the plating treatment. Applying this type of plating treatment to the peripheral region C makes it possible to improve corrosion resistance and prevent wetting of the solder 24 a.
  • the case 26 can be suitably attached to the peripheral region C via the bonding material 28 .
  • Scribing could also be performed instead of the plating treatment in order to prevent flowing of the solder.
  • scribing creates dust, and there is a risk that the dust could cause the semiconductor device 10 e to malfunction.
  • the plating treatment does not cause this type of problem.
  • the embedded part 33 d is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the contact surface 33 d 1 on the mounting region A side of the embedded part 33 d is positioned below the ceramic circuit substrate 21
  • the contact surface 33 d 2 on the peripheral region C side of the embedded part 33 d is positioned below the case 26 .
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the primary part which makes up a large portion of the heat dissipating unit 30 d, is made of aluminum or an aluminum alloy, and the embedded part 33 d can be made of copper or a copper alloy (or an MMC). Thus, it is possible for the heat dissipating unit 30 d to be made lightweight.
  • a difference in the linear expansion coefficients of the flat plate part 31 d and of the embedded part 33 d would cause deformations, warping, and gaps in the contact surfaces 33 d 1 , 33 d 2 .
  • the contact surfaces 33 d 1 , 33 d 2 between the flat plate part 31 d and embedded part 33 d are positioned below both the ceramic circuit substrate 21 and the case 26 . Due to this, stress generated on the contact surfaces 33 d 1 , 33 d 2 resulting from deformations or the like does not progress to the sealing member 25 , thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 e.
  • the unevenness in the contact surface 33 d 2 between the flat plate part 31 d and the embedded part 33 d increases the bonding area of the bonding material 28 , thus improving bonding strength between the peripheral region C of the flat plate part 31 d and the case 26 .
  • the semiconductor device 10 e makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 7 an example will be described in which, in the semiconductor device 10 b of Embodiment 3, protrusions have been formed in the sealed region B of the heat dissipating unit 30 b.
  • a semiconductor device 10 f of Embodiment 7 will be described using FIG. 13 and FIG. 14 .
  • Embodiment 7 the same reference characters are given to configurations that are the same as Embodiments 1 to 6, and explanations of these configurations may be omitted.
  • the semiconductor device 10 f contains the semiconductor unit 20 a and the heat dissipating unit 30 e.
  • the heat dissipating unit 30 e has the flat plate part 31 b, fin part 32 , and embedded part 33 b.
  • the embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal.
  • the second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
  • the embedded part 33 b has a plurality of protrusions 33 b 1 formed in the sealed region B along the sides of the mounting region A.
  • the protrusions 33 b 1 shown in FIG. 13 and FIG. 14 are one example.
  • the shape of the protrusion 33 b 1 can be a cylindrical shape, a semi-spherical shape, a cuboid shape, a trigonal pyramid shape, a quadrangular pyramid shape, or the like.
  • the arrangement of the protrusions 33 b 1 is not limited to one row, and can be a plurality of rows or the like.
  • the primary part makes up 67% of the volume
  • the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 e made completely of copper is 100, then the weight of the heat dissipating unit 30 e when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53.
  • the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 e.
  • This type of semiconductor device 10 f can also be manufactured in a similar manner to Embodiment 3.
  • the semiconductor device 10 f has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 f also has the heat dissipating unit 30 e.
  • the heat dissipating unit 30 e includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy.
  • the heat dissipating unit 30 e is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC).
  • the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21 , and front surface of the heat dissipating unit 30 e.
  • the front surface of the heat dissipating unit 30 e of the semiconductor device 10 f includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25 , and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded.
  • the embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the plurality of protrusions 33 b 1 are formed in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e.
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the plurality of protrusions 33 b 1 are formed in the sealed region B of the embedded part 33 b, thus increasing the contact area between the sealing member 25 and the sealed region B, along with improving the bonding strength of the sealing member 25 to the sealed region B due to the anchor effect of the protrusions 33 b 1 . This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e.
  • the primary part which makes up a large portion of the heat dissipating unit 30 e, is made of aluminum or an aluminum alloy, and the embedded part 33 b, which has less volume than the primary part, can be made of copper or a copper alloy. Furthermore, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b. Thus, it is possible for the heat dissipating unit 30 e to be made lightweight.
  • the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted.
  • This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 f has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
  • the semiconductor device 10 f makes it possible to lower costs and suppress a decrease in reliability.
  • Embodiment 8 an example will be described in which, in the semiconductor device 10 b of Embodiment 3, recesses have been formed in the sealed region B of the heat dissipating unit 30 b.
  • a semiconductor device 10 g of Embodiment 8 will be described using FIG. 15 .
  • FIG. 15 shows a side cross-sectional view of the semiconductor device of Embodiment 8.
  • Embodiment 8 the same reference characters are given to configurations that are the same as Embodiments 1 to 7, and explanations of these configurations may be omitted.
  • the semiconductor device 10 g contains the semiconductor unit 20 a and a heat dissipating unit 30 f.
  • the heat dissipating unit 30 f has the flat plate part 31 b, fin part 32 , and embedded part 33 b.
  • the embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal.
  • the second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
  • the volumetric mass density of this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm 3 (aluminum or aluminum alloy).
  • the volumetric mass density of the embedded part 33 b is 8.9 g/cm 3 (copper or copper alloy) or 2.8 g/cm 3 (MMC).
  • the embedded part 33 b has a plurality of recesses 33 b 2 formed in the sealed region B along the sides of the mounting region A.
  • the formation places of the recesses 33 b 2 in the sealed region B correspond to the protrusions 33 b 1 in FIG. 13 , for example.
  • the shape of this type of recess 33 b 2 can be a cylindrical shape, a semi-spherical shape, a cuboid shape, a trigonal pyramid shape, a quadrangular pyramid shape, or the like.
  • the arrangement of the recesses 33 b 2 is not limited to one row, and can be a plurality of rows or the like.
  • the primary part makes up 67% of the volume
  • the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 f made completely of copper is 100, then the weight of the heat dissipating unit 30 f when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53.
  • the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 f.
  • This type of semiconductor device 10 g can also be manufactured in a similar manner to Embodiment 3.
  • the semiconductor device 10 g has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c.
  • the semiconductor device 10 g also has the heat dissipating unit 30 f.
  • the heat dissipating unit 30 f includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy.
  • the heat dissipating unit 30 f is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC).
  • the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21 , and front surface of the heat dissipating unit 30 f.
  • the front surface of the heat dissipating unit 30 f of the semiconductor device 10 g includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25 , and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded.
  • the embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 . Additionally, in the semiconductor device 10 g, the plurality of recesses 33 b 2 are formed in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f.
  • the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
  • the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25 .
  • the plurality of recesses 33 b 2 are formed in the sealed region B of the embedded part 33 b, thus increasing the contact area between the sealing member 25 and the sealed region B, along with improving the bonding strength of the sealing member 25 to the sealed region B. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f.
  • the primary part which makes up a large portion of the heat dissipating unit 30 f, is made of aluminum or an aluminum alloy
  • the embedded part 33 b which has a lower volume than the primary part, is made of copper or a copper alloy (or an MMC).
  • the heat dissipating unit 30 f it is possible for the heat dissipating unit 30 f to be made lightweight.
  • the embedded part 33 b made of copper or a copper alloy (or an MMC) is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted.
  • the embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 g has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
  • the semiconductor device 10 g makes it possible to lower costs and suppress a decrease in reliability.
  • the plurality of protrusions 33 b 1 of Embodiment 7 and recesses 33 b 2 of Embodiment 8 can be respectively formed in the sealed regions B (embedded parts 33 , 33 a, 33 b, 33 c, 33 d ) of the heat dissipating units 30 , 30 a, 30 b, 30 c, 30 d of the semiconductor devices 10 , 10 a, 10 b, 10 c, 10 d, 10 e in Embodiments 1-6.
  • This improves the bonding strength of the sealing member 25 to the sealed region B more than if the protrusions 33 b 1 and recesses 33 b 2 were not provided.

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Abstract

A semiconductor device includes a heat dissipating unit that includes a primary part made of a first metal material and an embedded part that is embedded in a front surface of the primary part and that is made of a second metal material, a front surface of the heat dissipating unit having a mounting region on which a rear surface of a semiconductor element substrate is mounted so as to dissipate heat generated by the semiconductor element; and a sealing member that seals the semiconductor element, the substrate, and a sealed region of the front surface of the heat dissipating unit, wherein the embedded part is formed in the sealed region, and an absolute difference of the linear expansion coefficient of the second metal material and that of the sealing member is less than or equal to 25% of a value of the linear expansion coefficient of the sealing member.

Description

BACKGROUND OF THE INVENTION Technical Field
The present invention relates to a semiconductor device.
Background Art
Semiconductor devices containing semiconductor elements such as IGBTs (insulated gate bipolar transistors) and power MOSFETs (metal oxide semiconductor field effect transistors) are being used as power converters, for example. This type of semiconductor device includes such semiconductor elements and a substrate that includes an insulated plate and a plurality of circuit patterns formed on the front surface of the insulated plate, the semiconductor elements being arranged in the circuit patterns. Furthermore, in order to cool the heat generated by the semiconductor elements during operation, the substrate of the semiconductor device is disposed on a heat dissipating unit such as a heat sink made of copper, for example.
A heat dissipating unit made with copper as the main constituent can have high dissipating characteristics, but is heavy and increases costs.
As a countermeasure, a composite type heat dissipating unit is used in which the main constituent is aluminum, which is advantageous in terms of cost and processability in addition to heat dissipating characteristics, and in which copper is embedded in the arrangement region of the substrate. Using this type of composite heat dissipating unit makes it possible to maintain uniform heat dissipating characteristics while making the device lightweight (see Patent Document 1).
Related Art Document Patent Document
Patent Document 1: Japanese Translation of PCT International Application No. 2013-500580
SUMMARY OF THE INVENTION
When the substrate disposed on the composite heat dissipating unit is sealed with a sealing member (an epoxy resin, for example), there have been cases where the epoxy resin has peeled from the heat dissipating unit while using the semiconductor device. This led to a decrease in reliability of the semiconductor device.
The present invention was made in view of the above and aims at providing a semiconductor device with which a sealing member can be prevented from peeling from a heat dissipating unit.
Diligent examination by the inventors of the present invention has found that the epoxy resin will peel from the heat dissipating unit due to thermal cycling while using the semiconductor device, because the linear expansion coefficient of the sealing member and the linear expansion coefficient of a portion of the heat dissipating unit contacting the sealing member greatly differ from each other.
Additional or separate features and advantages of the invention will be set forth in the descriptions that follow and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, in one aspect, the present disclosure provides a semiconductor device, including: a semiconductor element; a substrate that includes an insulated plate and a circuit layer on a front surface of the insulated plate, the semiconductor element being disposed on a front surface of the circuit layer; a heat dissipating unit that includes a primary part made of a first metal material and an embedded part that is embedded in a front surface of the primary part and that is made of a second metal material, a front surface of the heat dissipating unit having a mounting region on which a rear surface of the substrate is mounted so as to dissipate heat generated by the semiconductor element; and a sealing member that seals the semiconductor element, the substrate, and a sealed region of the front surface of the heat dissipating unit that is defined as an exposed region that is adjacent to the mounting region and that is not covered by the substrate, wherein the embedded part is formed in an area in the front surface of the heat dissipating unit that includes at least an entirety of the sealed region, and wherein a linear expansion coefficient of the second metal material is less than a linear expansion coefficient of the first metal material, and an absolute difference of the linear expansion coefficient of the second metal material and a linear expansion coefficient of the sealing member is less than or equal to 25% of a value of the linear expansion coefficient of the sealing member.
In the aforementioned semiconductor device, the sealed region may surround the mounting region in a plan view. In this case, the area in which the embedded part is formed extends beyond the sealed region and includes an entirety of the mounting region in the plan view.
In the aforementioned semiconductor device, a volumetric mass density of the first metal material may be less than a volumetric mass density of the second metal material.
In the aforementioned semiconductor device, the linear expansion coefficient of the second metal material may be greater than or equal to 10.5 ppm/° C. and is less than or equal to 22.5 ppm/° C. The linear expansion coefficient of the second metal material may be preferably greater than or equal to 16.0 ppm/° C. and is less than or equal to 18.0 ppm/° C. In this case, the second metal material may be copper, a copper alloy, or a metal matrix composite material. The metal matrix composite material may be a composite material containing silicon carbide. Furthermore, the metal matrix composite material may contain one of aluminum and magnesium in addition to the silicon carbide.
In the aforementioned semiconductor device, the area in which the embedded part is formed may extend beyond the sealed region and include a part of the mounting region in a plan view so that an inner edge of said area is positioned inside the mounting region on which the substrate is mounted in the plan view.
In the aforementioned semiconductor device, a linear expansion coefficient of the sealing member may be greater than or equal to 14.0 ppm/° C. and is less than or equal to 18.0 ppm/° C. In this case, the sealing member may include an epoxy resin and a filler contained in the epoxy resin. The filler may be silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.
In the aforementioned semiconductor device, the first metal material may be aluminum or an aluminum alloy.
The aforementioned semiconductor device may further include a case having sidewalls that are mounted, via a bonding material, on a peripheral region of the front surface of the heat dissipating unit that surrounds the sealed region. In this case, the area in which the embedded part is formed may extend beyond the sealed region and include a part of the peripheral region in a plan view so that an outer edge of said area is positioned inside the peripheral region on which the sidewalls of the case are mounted in the plan view. A metal film or an oxide film may be formed in the peripheral region of the heat dissipating unit.
In the aforementioned semiconductor device, the embedded part may have a plurality of protrusions that protrude from the front surface of the heat dissipating unit in the sealed region.
In the aforementioned semiconductor device, the embedded part may have a plurality of recesses in the front surface of the heat dissipating unit in the sealed region.
In the aforementioned semiconductor device, the primary part of the heat dissipating unit may include: a flat plate part having a flat plate shape, the mounting region and the sealed region being defined in a front surface of the flat plate part; and a fin part having a plurality of fins extending downwardly, formed on a rear surface of the flat plate part.
The technology in the present disclosure makes it possible to prevent peeling of a sealing resin from a heat dissipating unit, thus preventing a decrease in reliability of the semiconductor device.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a side cross-sectional view of a semiconductor device of Embodiment 1.
FIG. 2 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 1.
FIG. 3 is a table showing statuses of peeling of a sealing member from an embedded part based on a difference of the linear expansion coefficient of the sealing member and the linear expansion coefficient of the embedded part in the semiconductor device of Embodiment 1.
FIG. 4 shows a side cross-sectional view of a semiconductor device of Embodiment 2.
FIG. 5 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 2.
FIG. 6 shows a side cross-sectional view of a semiconductor device of Embodiment 3.
FIG. 7 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 3.
FIG. 8 shows a side cross-sectional view of a semiconductor device of Embodiment 4.
FIG. 9 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 4.
FIG. 10 shows a side cross-sectional view of a semiconductor device of Embodiment 5.
FIG. 11 shows a side cross-sectional view of a semiconductor device of Embodiment 6.
FIG. 12 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 6.
FIG. 13 shows a side cross-sectional view of a semiconductor device of Embodiment 7.
FIG. 14 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 7.
FIG. 15 shows a side cross-sectional view of a semiconductor device of Embodiment 8.
 DETAILED DESCRIPTION OF EMBODIMENTS
The embodiments will be described hereafter with reference to the drawings.
Embodiment 1
First, a semiconductor device according to Embodiment 1 will be described with reference to FIG. 1 and FIG. 2.
FIG. 1 is a side cross-sectional view of a semiconductor device of Embodiment 1, and FIG. 2 is a plan view of a heat dissipating unit of the semiconductor device of Embodiment 1. FIG. 2 shows a plan view of the front surface of the heat dissipating unit 30 (on the side where a semiconductor unit 20 is placed).
The semiconductor device 10 contains the semiconductor unit 20 and the heat dissipating unit 30.
As shown in FIG. 1, the semiconductor unit 20 has a ceramic circuit substrate 21 (substrate), semiconductor elements 22 a and 22 b bonded to the front surface of the ceramic circuit substrate 21, a connection terminal 23 electrically connecting the main electrodes of the semiconductor elements 22 a and 22 b, and external connection terminals 29 a and 29 b that electrically connect to the top of the ceramic circuit substrate 21. The semiconductor unit 20 is sealed by a sealing member 25, except for the top ends of the external connection terminals 29 a, 29 b. The number (or placement) of the semiconductor elements 22 a, 22 b bonded on the ceramic circuit substrate 21 (circuit layer 21 c, described later) is merely one example, and a number or placement other than those shown in FIG. 1 may be used as long as the elements are disposed on the ceramic circuit substrate 21 (circuit layer 21 c).
The ceramic circuit substrate 21 has an insulated plate 21 a, a metal layer 21 b formed on the rear surface of the insulated plate 21 a, and a circuit layer 21 c formed on the front surface of the insulated plate 21 a.
The insulated plate 21 a is formed of a ceramic with high thermal conductivity, such as aluminum oxide, aluminum nitride, or silicon nitride, which have excellent thermal conductivity.
The metal layer 21 b is formed of a metal such as aluminum, iron, silver, or copper, which have excellent thermal conductivity, or an alloy containing at least one of these metals.
The circuit layer 21 c contains a plurality of circuit patterns and is made of a material with excellent conductivity. Examples of this type of material include aluminum, copper, or an alloy containing at least one of these metals.
The circuit substrate 21 having this type of configuration can be a DCB (direct copper bonding) substrate or an AMB (active metal blazed) substrate, for example. The ceramic circuit substrate 21 can transfer heat generated by the semiconductor elements 22 a, 22 b to the heat dissipating unit 30 side through the circuit layer 21 c, insulated plate 21 a, and metal layer 21 b.
The insulated plate 21 a has a rectangular shape in a plan view, for example. The metal layer 21 b also has a rectangular shape in a plan view, with a smaller area than the insulated plate 21 a. Therefore, the ceramic circuit substrate 21 has a rectangular shape, for example.
The semiconductor elements 22 a, 22 b contain a switching element such as an IGBT or power MOSFET made of silicon or silicon carbide, for example. These semiconductor elements 22 a, 22 b each have a drain electrode (or collector electrode) on the rear surface thereof as the main electrode, and a gate electrode and source electrode (or emitter electrode) on the front surface thereof as the main electrode, for example.
The semiconductor elements 22 a, 22 b contain a diode such as an SBD (Schottky barrier diode) or FWD (freewheeling diode) as necessary. These semiconductor elements 22 a, 22 b each have a cathode electrode on the rear surface thereof as the main electrode, and an anode electrode on the front surface thereof as the main electrode. The semiconductor elements 22 a, 22 b each have a rear surface thereof bonded on a prescribed circuit pattern (not shown) of the circuit layer 21 c.
The semiconductor elements 22 a, 22 b are bonded to the circuit layer 21 c via solder 24 b, 24 c.
The connection terminal 23 and external connection terminals 29 a, 29 b are lead frames made of a material with excellent conductivity, for example. Examples of this type of material include aluminum, copper, or an alloy containing at least one of these metals.
The sealing member 25 contains a thermosetting resin such as a maleimide-modified epoxy resin, maleimide-modified phenol resin, or maleimide resin, and a filler contained in the thermosetting resin, for example. An example of this type of sealing member 25 includes an epoxy resin and a filler in the epoxy resin such as silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride. The linear expansion coefficient of this example of the sealing member 25 is 14.0 ppm/° C. to 18.0 ppm/° C. inclusive, in accordance with the amount of the filler. Note that the linear expansion coefficient is an average linear expansion coefficient at 20° C. to 100° C. inclusive. The sealing member 25 is solidified while sealing the ceramic circuit substrate 21, semiconductor elements 22 a, 22 b, and connection terminal 23, as described later.
The heat dissipating unit 30 of the semiconductor device 10 has a flat plate part 31, a fin part 32, and an embedded part 33.
As shown in FIG. 1 and FIG. 2, for example, the heat dissipating unit 30 has set on the front surface thereof a mounting region A where the ceramic circuit substrate 21 is disposed via the solder 24 a, and a sealed region B adjacent to the mounting region A, surrounding the mounting region A, and on which the sealing member 25 is bonded. This type of heat dissipating unit 30 has, on the front surface thereof, the flat plate part 31, which has the mounting region A, and the embedded part 33, which is embedded in the sealed region B. The flat plate part 31 is made of a first metal material, and the embedded part 33 is made of a second metal material with a smaller linear expansion coefficient than the first metal material. The sealed region B is dug in the flat plate part 31. The thickness of the flat plate part 31 is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
The flat plate part 31 also has the fin part 32, which is made of a plurality of fins, formed integrally on the rear surface thereof. The fin part 32 is formed close to the rear surface of the flat plate part 31 corresponding to the mounting region A. The first metal material forming the flat plate part 31 and fin part 32 (hereinafter together referred to as the primary part) is aluminum or an aluminum alloy, for example. The linear expansion coefficient of the primary part made of the aluminum or aluminum alloy is generally 23.0 ppm/° C. to 25.0 ppm/° C. inclusive.
The embedded part 33 is embedded inside the sealed region B that is dug into the front surface of the flat plate part 31. Here, the front surface of the mounting region A of the flat plate part 31 and the front surface of the embedded part 33 are horizontal. The second metal material forming this type of embedded part 33 is copper or a copper alloy, for example. The linear expansion coefficient of the embedded part 33 formed of the copper or copper alloy is 16.0 ppm/° C. to 18.0 ppm/° C. inclusive. Furthermore, the second metal material forming the embedded part 33 may be an MMC (metal matrix composite) such as a composite material of aluminum and silicon carbide (Al—SiC) or a composite material of magnesium and silicon carbide (Mg—SiC), for example. The linear expansion coefficient of the embedded part 33 made of an MMC is 10.5 ppm/° C. to 22.5 ppm/° C. inclusive.
Furthermore, a material of the primary part is selected to have the volumetric mass density that is less than the volumetric mass density of the embedded part 33. In the case described above, the volumetric mass density when the primary part is aluminum or an aluminum alloy is 2.7 g/cm3. Meanwhile, the volumetric mass density when the embedded part 33 is copper or a copper alloy is 8.9 g/cm3, and when the embedded part 33 is an MMC, the volumetric mass density is 2.8 g/cm3.
In regard to the volume of the heat dissipating unit 30 of the semiconductor device 10, the primary part makes up 90% of the volume, and the embedded part 33 makes up 10%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 made completely of copper is 100, then the weight of the heat dissipating unit 30 when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 is made of copper or a copper alloy would be 37. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33, and the volume of the primary part is sufficiently larger than the volume of the embedded part 33, which makes it possible to suppress an increase in weight of the heat dissipating unit 30.
In contrast to the heat dissipating unit 30 being made completely of copper, which is assumed to have a weight of 100, the weight when the heat dissipating unit 30 is made completely of aluminum is 30, which allows the device to be made lightweight. However, as already described, if the heat dissipating unit 30 is made completely of aluminum, the sealing member 25 will peel.
Furthermore, in contrast to the case where the heat dissipating unit 30 is made completely of copper, which is assumed to have a weight of 100, the weight when the heat dissipating unit 30 is made completely of an MMC is 31, which also allows the device to be made lightweight. However, an MMC is expensive, and thus increases manufacturing costs.
It is preferable that the mounting region A of the front surface of the heat dissipating unit 30 be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21. The thickness of the plating is 10 μm to 100 μm inclusive.
The solder 24 a, 24 b, 24 c used with the semiconductor device 10 is, for example, a lead-free solder having as a main component thereof at least one alloy among an alloy made of tin-silver-copper, an alloy made of tin-zinc-bismuth, an alloy made of tin-copper, or an alloy made of tin-silver-indium-bismuth. The solder may also contain an additive such as nickel, germanium, cobalt, or silicon.
When manufacturing this type of semiconductor device 10, first the ceramic circuit substrate 21, semiconductor elements 22 a and 22 b, connection terminal 23, and external connection terminals 29 a and 29 b are prepared. Then, the heat dissipating unit 30 is prepared, which has the flat plate part 31, fin part 32, and embedded part 33 embedded in the sealed region B dug around the mounting region A on the front surface of the flat plate part 31.
The embedded part 33 of the heat dissipating unit 30 corresponding to the shape of the sealed region B dug into the flat plate part 31 is formed in advance. The prepared embedded part 33 is set in the dug sealed region B, and then the embedded part 33 and the flat plate part 31 are integrated by friction stir welding.
The ceramic circuit substrate 21 is disposed on the mounting region A of the flat plate part 31 via solder paste or a solder plate. Furthermore, the semiconductor elements 22 a and 22 b, which are connected by the connection terminal 23, are each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate. The external connection terminals 29 a and 29 b are also each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate.
The solder paste or solder plate is heated and melted in this state, and the melted solder is solidified. This adheres the ceramic circuit substrate 21 to the mounting region A of the flat plate part 31 via the solder 24 a, and adheres the semiconductor elements 22 a and 22 b on the ceramic circuit substrate 21 via the solder 24 b, 24 c. The external connection terminals 29 a, 29 b are also adhered on the circuit layer 21 c of the ceramic circuit substrate 21 via solder (not shown).
The heat dissipating unit 30, on the mounting region A of which the ceramic circuit substrate 21 having the semiconductor elements 22 a, 22 b (and external connection terminals 29 a, 29 b) adhered thereto is adhered, is set in a prescribed mold, and a sealing material in a melted state is injected into the mold. The injected sealing material is sufficiently solidified (thus forming the sealing member 25), and the mold is removed.
This forms the semiconductor device 10 in which the ceramic circuit substrate 21, semiconductor elements 22 a, 22 b, connection terminal 23, and sealed region B of the heat dissipating unit 30 are sealed by the sealing member 25.
In the semiconductor device 10 configured in this manner, the smaller the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 (sealed region B) is, the more that the sealing member 25 can be prevented from peeling from the embedded part 33 (sealed region B) due to thermal cycling while using the semiconductor device 10.
FIG. 3 will be used to describe statuses of peeling of the sealing member 25 from the embedded part 33 depending on the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33.
FIG. 3 is a table showing the statuses of peeling of the sealing member from the embedded part based on the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 in the semiconductor device of Embodiment 1.
In FIG. 3, the table shows the cases in which the embedded part 33 is copper, aluminum, and a composite material of aluminum and silicon carbide while the sealing member 25 has three types of linear expansion coefficients (14 ppm/° C., 16 ppm/° C., 18 ppm/° C.). The peeling status (adhere or peeled) is indicated for the differences in the linear expansion coefficients between the sealing member 25 and embedded part 33 in these cases.
The differences in the linear expansion coefficients in FIG. 3 are obtained by the following equation.
Difference (%) in linear expansion coefficients=(linear expansion coefficient of sealing member 25−linear expansion coefficient of embedded part 33)/(linear expansion coefficient of sealing member 25)×100.
Furthermore, the results in FIG. 3 are from observing the peeling status via an ultrasonic microscope (scanning acoustic tomography (SAT)) by performing a thermal cycling test for each combination of the sealing member 25 and embedded part 33. The thermal cycling test changes the temperature in a range between −40° C. to 125° C. and repeats this 100 times.
According to the results, it was observed that, if the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 is in a range of 23% to −22% (“1-1,” “1-3,” “2-1,” “2-3,” “3-1,” “3-3”), then peeling has not occurred in each case. In other words, if the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 is less than or equal to approximately 25% of a value of the linear expansion coefficient of the sealing member 25, then it is thought that peeling does not occur between the sealing member 25 and the embedded part 33.
Accordingly, the semiconductor device 10 has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. Furthermore, the semiconductor device 10 has the heat dissipating unit 30 having the flat plate part 31 and fin part 32 made of the first metal material and the embedded part 33 made of the second metal material and embedded in the front surface of the flat plate part 31, and the sealing member 25 that seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and the front surface of the heat dissipating unit 30. Moreover, in the semiconductor device 10, the front surface of the heat dissipating unit 30 includes the mounting region A on which the ceramic circuit substrate 21 is disposed, and the sealed region B adjacent to the mounting region A and sealed with the sealing member 25. The embedded part 33 is formed in at least the sealed region B, the linear expansion coefficient of the second metal material is less than the linear expansion coefficient of the first metal material, and the absolute difference of the linear expansion coefficient of the second metal material and the linear expansion coefficient of the sealing member is less than or equal to 25% of a value of the linear expansion coefficient of the sealing member.
In this type of semiconductor device 10, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 in the sealed region B of the heat dissipating unit 30 sealed by the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25, which makes it possible to suppress peeling of the sealed member 25 in the sealed region B of the heat dissipating unit 30.
Moreover, the primary part, which makes up a large portion of the heat dissipating unit 30, is made of aluminum or an aluminum alloy, and the embedded part 33 is made of copper or a copper alloy (or an MMC), and thus the heat dissipating unit can be made lightweight.
Accordingly, the semiconductor device 10 makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 2
In Embodiment 2, an example will be described in which, in the semiconductor device 10 of Embodiment 1, a contact surface (boundary) between the side face of the dug portion of the flat plate part 31 of the heat dissipating unit 30 and the side face of the embedded part 33 is positioned below the ceramic circuit substrate 21.
A semiconductor device 10 a of Embodiment 2 will be described using FIG. 4 and FIG. 5.
FIG. 4 shows a side cross-sectional view of a semiconductor device of Embodiment 2. FIG. 5 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 2. FIG. 5 shows a plan view of the front surface of a heat dissipating unit 30 a (on the side where the semiconductor unit 20 is placed).
In Embodiment 2, the same reference characters are given to configurations that are the same as Embodiment 1, and explanations of these configurations may be omitted.
The semiconductor device 10 a contains the semiconductor unit 20 and the heat dissipating unit 30 a.
The heat dissipating unit 30 a has a flat plate part 31 a, the fin part 32, and an embedded part 33 a.
As shown in FIG. 4 and FIG. 5, the heat dissipating unit 30 a has set on the front surface thereof the mounting region A (the inner side of the dashed line in FIG. 5) where the ceramic circuit substrate 21 is disposed via the solder 24 a, and the sealed region B (the outer side of the dashed line in FIG. 5) surrounding the mounting region A and on which the sealing member 25 is bonded. In the flat plate part 31 a, an outer peripheral portion of the mounting region A and the sealed region B are dug together. The thickness of the mounting region A of the flat plate part 31 a is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the outer peripheral portion of the mounting region A and the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
Similar to Embodiment 1, the flat plate part 31 a also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof. The fin part 32 is formed close to the rear surface of the flat plate part 31 a corresponding to the mounting region A. The first metal material forming this type of flat plate part 31 a and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
The embedded part 33 a is embedded in the outer peripheral portion of the mounting region A dug in the front surface of the flat plate part 31 a and also embedded in the sealed region B. Here, the front surface of the mounting region A of the flat plate part 31 a and the front surface of the embedded part 33 a are horizontal. The second metal material forming this type of embedded part 33 a is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Furthermore, a contact surface 33 a 1 on the mounting region A side, which is the boundary (inner side boundary) between the side face of the embedded part 33 a and the side face of the dug portion of the flat plate part 31 a, is positioned below the ceramic circuit substrate 21.
Similar to Embodiment 1, the volumetric mass density of this type of primary part is less than the volumetric mass density of the embedded part 33 a, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 a is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In regard to the volume of the heat dissipating unit 30 a of the semiconductor device 10 a, the primary part makes up 75% of the volume, and the embedded part 33 a makes up 25%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 a made completely of copper is 100, then the weight of the heat dissipating unit 30 a when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 a is made of copper or a copper alloy would be 48. In this case, the weight of the heat dissipating unit 30 a when the embedded part 33 a is made of an MMC is 45. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 a, and the volume of the primary part is greater than the volume of the embedded part 33 a, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 a.
Furthermore, similar to Embodiment 1, it is preferable that the mounting region A of the front surface of the heat dissipating unit 30 a be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21. The thickness of the plating is 10 μm to 100 μm inclusive.
This type of semiconductor device 10 a can also be manufactured in a similar manner to Embodiment 1.
Accordingly, the semiconductor device 10 a has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 a also has the heat dissipating unit 30 a. The heat dissipating unit 30 a includes the flat plate part 31 a and the fin part 32 made of aluminum or an aluminum alloy. Moreover, the semiconductor device includes the embedded part 33 a, which is embedded in the front surface of the flat plate part 31 a and made of copper or a copper alloy (or an MMC). The sealing member 25 seals the semiconductor elements 22 a, 22 b, the ceramic circuit substrate 21, and the front surface of the heat dissipating unit 30 a. Moreover, the front surface of the heat dissipating unit 30 a of the semiconductor device 10 a includes the mounting region A on which the ceramic circuit substrate 21 is disposed, and the sealed region B adjacent to the mounting region A and sealed with the sealing member 25. The embedded part 33 a is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is less than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. In addition, the contact surface 33 a 1 between the embedded part 33 a and the mounting region A side of the flat plate part 31 a of the semiconductor device 10 a is positioned below the ceramic circuit substrate 21.
In this type of semiconductor device 10 a, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 a, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 a of the heat dissipating unit 30 a sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 a of the heat dissipating unit 30 a.
The primary part, which makes up a large portion of the heat dissipating unit 30 a, is made of aluminum or an aluminum alloy, and the embedded part 33 a is made of copper or a copper alloy. Thus, it is possible for the heat dissipating unit 30 a to be made lightweight.
A difference in the linear expansion coefficients of the flat plate part 31 a and of the embedded part 33 a would cause deformations, warping, and gaps in the contact surface 33 a 1. In the semiconductor device 10 a, the contact surface 33 a 1 between the flat plate part 31 a and the embedded part 33 a is positioned below the ceramic circuit substrate 21. Due to this, stress generated on the contact surface 33 a 1 resulting from deformations or the like does not progress to the sealing member 25, thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 a. The unevenness in the contact surface 33 a 1 between the flat plate part 31 a and the embedded part 33 a increases the bonding area of the solder 24 a, thus improving bonding strength between the mounting region A of the flat plate part 31 a and the ceramic circuit substrate 21.
Accordingly, the semiconductor device 10 a makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 3
In Embodiment 3, a semiconductor device in which semiconductor elements, a ceramic circuit substrate, etc. are stored in a case will be described with reference to FIG. 6 and FIG. 7.
FIG. 6 is a side cross-sectional view of the semiconductor device of Embodiment 3, and FIG. 7 is a plan view of a heat dissipating unit of the semiconductor device of Embodiment 3. FIG. 7 shows a plan view of the front surface of the heat dissipating unit 30 b (on the side where a semiconductor unit 20 a is placed).
In Embodiment 3, the same reference characters are given to configurations that are the same as Embodiments 1 and 2, and explanations of these configurations may be omitted.
The semiconductor device 10 b contains the semiconductor unit 20 a and the heat dissipating unit 30 b.
As shown in FIG. 6, the semiconductor unit 20 a has a ceramic circuit substrate 21 (substrate), semiconductor elements 22 a and 22 b bonded to the front surface of the ceramic circuit substrate 21, and a connection terminal 23 electrically connecting the main electrodes of the semiconductor elements 22 a and 22 b. The semiconductor unit 20 a also has a case 26 for storing these, and bonding wires 27 a, 27 b for electrically connecting internal connection parts 26 a 1, 26 b 1 provided in the case 26 with the circuit layer 21 c of the ceramic circuit substrate 21. Cross-sections of sidewalls of the case 26 are depicted in FIG. 6. In the semiconductor device 10 b, these are sealed inside the case 26 by the sealing member 25.
The case 26 is provided on the outer periphery of the ceramic circuit substrate 21 etc. and has a box shape that surrounds the lateral sides of the ceramic circuit substrate 21 etc. and that has an opening 26 c formed in the center thereof in a plan view. This type of case 26 is made of a thermoplastic resin. The resin can be polyphenylene sulfide (PPS), a polybutylene terephthalate (PBT) resin, a polybutylene succinate (PBS) resin, a polyamide (PA) resin, an acrylonitrile butadiene styrene (ABS) resin, or the like.
Furthermore, this type of case 26 is bonded to the heat dissipating unit 30 b via a bonding material 28 of the case 26. This type of bonding material 28 may be coated on the bottom of the case 26, or coated on an peripheral region (arrangement region) C on the front surface of the flat plate part 31 b of the heat dissipating unit 30 b where the case 26 is bonded. The coating of the bonding material 28 can be done with any known method, such as a screen printing method using a mask, a dispensing method using a syringe, or the like. The bonding material 28 is an epoxy resin-based or silicone rubber-based curable adhesive, for example.
Due to the resin, connection terminals of the case 26 are insert-molded, with the internal connection parts 26 a 1, 26 b 1 that are respective ends of the connection terminals being disposed on an inner stepped part, and external connection parts 26 a 2, 26 b 2 that are respectively the other ends of the connection terminals being disposed on the upper surface on the outer side. In this type of case 26, prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 are electrically connected by the bonding wires 27 a, 27 b to the internal connection parts 26 a 1, 26 b 1.
Thus, the semiconductor elements 22 a, 22 b can output/input signals to/from outside from the external connection parts 26 a 2, 26 b 2 via the circuit layer 21 c, bonding wires 27 a, 27 b, and internal connection parts 26 a 1, 26 b 1.
Similar to Embodiment 1, the sealing member 25 includes an epoxy resin and a filler in the epoxy resin such as silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride. The linear expansion coefficient of this type of sealing member 25 is 14.0 ppm/° C. to 18.0 ppm/° C. inclusive, based on the amount of the filler. Furthermore, in Embodiment 3, the sealing member 25 can also be gel.
This type of sealing member 25 is injected inside the case 26 from the opening 26 c in the case 26. The sealing member 25 injected into the case 26 seals the ceramic circuit substrate 21, semiconductor elements 22 a, 22 b, connection terminal 23, and bonding wires 27 a, 27 b on the heat dissipating unit 30 b.
Moreover, the heat dissipating unit 30 b of the semiconductor device 10 b has the flat plate part 31 b, fin part 32, and embedded part 33 b.
As shown in FIG. 6 and FIG. 7, the heat dissipating unit 30 b has set on the front surface thereof the mounting region A where the ceramic circuit substrate 21 is disposed via the solder 24 a, the sealed region B surrounding the mounting region A and on which the sealing member 25 is bonded, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. In the flat plate part 31 b, the mounting region A and the sealed region B are dug together. The thickness of the peripheral region C of the flat plate part 31 b is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the outer periphery of the mounting region A and the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
Similar to Embodiment 1, the flat plate part 31 b also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof. The fin part 32 is also formed close to the rear surface of the flat plate part 31 b corresponding to the mounting region A. The first metal material forming this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
The embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal. The second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Similar to Embodiment 1, the volumetric mass density of this type of primary part is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 b is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In regard to the volume of the heat dissipating unit 30 b of the semiconductor device 10 b, the primary part makes up 67% of the volume, and the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 b when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 b.
When manufacturing this type of semiconductor device 10 b, first the ceramic circuit substrate 21, semiconductor elements 22 a and 22 b, and connection terminal 23 are prepared. Then, the heat dissipating unit 30 b is prepared, which has the flat plate part 31 b, fin part 32, and embedded part 33 b that is embedded in the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b.
The embedded part 33 b of the heat dissipating unit 30 b corresponding to the shape of the mounting region A and sealed region B dug into the flat plate part 31 b is formed in advance, the embedded part 33 b is set in the dug mounting region A and sealed region B, and then the embedded part 33 b is integrated with the flat plate part 31 b by friction stir welding.
The ceramic circuit substrate 21 is disposed on the mounting region A of the embedded part 33 b of the heat dissipating unit 30 b via solder paste or a solder plate. The semiconductor elements 22 a, 22 b are also each disposed on a prescribed region of the circuit layer 21 c of the ceramic circuit substrate 21 via solder paste or a solder plate. The connection terminal 23 is also disposed on the main electrodes of the semiconductor elements 22 a, 22 b via solder paste or a solder plate.
The solder paste or solder plate is heated and melted in this state, and the melted solder is solidified. This adheres the ceramic circuit substrate 21 to the mounting region A of the embedded part 33 b of the heat dissipating unit 30 b via the solder 24 a, and adheres the semiconductor elements 22 a, 22 b on the ceramic circuit substrate 21 via the solder 24 b, 24 c. The main electrodes of the semiconductor elements 22 a, 22 b are electrically connected by the connection terminal 23.
The bonding material 28 is coated on the bottom surface of the case 26 or on the peripheral region C on the front surface of the flat plate part 31 b, and then the case 26 is attached to the peripheral region C on the front surface of the flat plate part 31 b. At this time, the ceramic circuit substrate 21 etc. is stored in the opening 26 c in the case 26 and enclosed.
A bonding tool (not shown) is used to electrically connect prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 with the internal connection parts 26 a 1, 26 b 1 of the case 26 via the bonding wires 27 a, 27 b.
A sealing material in a melted state is injected into the opening 26 c in the case 26 storing the ceramic circuit substrate 21, semiconductor elements 22 a, 22 b, etc. until the opening 26 c is filled. The injected sealing material is sufficiently solidified (thus forming the sealing member 25).
This forms the semiconductor device 10 b in which the ceramic circuit substrate 21, semiconductor elements 22 a, 22 b, connection terminal 23, bonding wires 27 a, 27 b, and sealed region B of the embedded part 33 b of the heat dissipating unit 30 b are sealed with the sealing member 25.
Furthermore, similar to Embodiment 1, because the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 b (sealed region B) is less than or equal to approximately 25% of the value of the linear expansion coefficient of the sealing member 25, then it is thought that peeling will not occur between the sealing member 25 and the embedded part 33 b.
Accordingly, the semiconductor device 10 b has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 b also has the heat dissipating unit 30 b. The heat dissipating unit 30 b includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 b is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 b. Moreover, the front surface of the heat dissipating unit 30 b of the semiconductor device 10 b includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25.
In this type of semiconductor device 10 b, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 b, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b.
The primary part, which makes up a large portion of the heat dissipating unit 30 b, is made of aluminum or an aluminum alloy, and the embedded part 33 b can be made of copper or a copper alloy. Furthermore, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b. Thus, it is possible for the heat dissipating unit 30 b to be made lightweight.
Moreover, in the semiconductor device 10 b, the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted. This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 b has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 and 10 a of Embodiments 1 and 2.
Accordingly, the semiconductor device 10 b makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 4
In Embodiment 4, an example will be described in which, in the semiconductor device 10 b of Embodiment 3, the contact surface (boundary) between the flat plate part 31 b and the embedded part 33 b of the heat dissipating unit 30 b is positioned below the case.
A semiconductor device 10 c of Embodiment 4 will be described using FIG. 8 and FIG. 9.
FIG. 8 shows a side cross-sectional view of the semiconductor device of Embodiment 4. FIG. 9 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 4. FIG. 9 shows a plan view of the front surface of the heat dissipating unit 30 b (on the side where a semiconductor unit 20 b is placed).
In Embodiment 4, the same reference characters are given to configurations that are the same as Embodiments 1 to 3, and explanations of these configurations may be omitted.
The semiconductor device 10 c contains the semiconductor unit 20 b and the heat dissipating unit 30 b.
As shown in FIG. 8, the semiconductor unit 20 b has the ceramic circuit substrate 21 (substrate), semiconductor elements 22 a and 22 b bonded to the front surface of the ceramic circuit substrate 21, and the connection terminal 23 electrically connecting the main electrodes of the semiconductor elements 22 a and 22 b. The semiconductor unit 20 b also has a case 36 for storing these, and bonding wires 27 a, 27 b for electrically connecting the internal connection parts 26 a 1, 26 b 1 provided in the case 36 with the circuit layer 21 c of the ceramic circuit substrate 21. Cross-sections of sidewalls of the case 36 are depicted in FIG. 8. In the semiconductor device 10 c, these are sealed inside the case 36 by the sealing member 25.
The case 36 is provided on the outer periphery of the ceramic circuit substrate 21 etc. and has a box shape that surrounds the lateral sides of the ceramic circuit substrate 21 etc. and that has an opening 36 c formed in the center thereof in a plan view. The opening 36 c in the case 36 has a narrower opening area than the opening 26 c in the case 26 of Embodiment 3. In other words, the thickness (in the left-right direction in the drawing) of the case 36 is greater than that of the case 26 of Embodiment 3.
This type of case 36 is also made of a thermoplastic resin. The resin can be polyphenylene sulfide, a polybutylene terephthalate resin, a polybutylene succinate resin, a polyamide resin, an acrylonitrile butadiene styrene resin, or the like.
Furthermore, this type of case 36 is also bonded on the peripheral region C of the heat dissipating unit 30 b via the bonding material 28. This type of bonding material 28 may be coated on the bottom of the case 36, or coated on the peripheral region C of the front surface of the flat plate part 31 b of the heat dissipating unit 30 b. The coating of the bonding material 28 can be done with any known method, such as a screen printing method using a mask, a dispensing method using a syringe, or the like.
Due to the resin, the connection terminals of the case 36 are insert-molded, with the internal connection parts 26 a 1, 26 b 1 that are respective ends of the connection terminals being disposed on the inner stepped part, and the external connection parts 26 a 2, 26 b 2 that are respectively the other ends of the connection terminals being disposed on the upper surface on the outer side. In this type of case 36, prescribed areas of the circuit layer 21 c of the ceramic circuit substrate 21 are electrically connected by the bonding wires 27 a, 27 b to the internal connection parts 26 a 1, 26 b 1. Thus, the semiconductor elements 22 a, 22 b can output/input signals to/from outside from the external connection parts 26 a 2, 26 b 2 via the circuit layer 21 c, bonding wires 27 a, 27 b, and internal connection parts 26 a 1, 26 b 1.
Furthermore, similar to Embodiment 3, the heat dissipating unit 30 b has the flat plate part 31 b, fin part 32, and embedded part 33 b.
However, as already described, the thickness (in the left-right direction in FIG. 8) of the case 36 is greater than that of the case 26 of Embodiment 3. Therefore, as the peripheral region C (outside the outer dashed line in FIG. 9) becomes wider, the sealed region B (the region between the inner dashed line and outer dashed line in FIG. 9) becomes narrower. Accordingly, the mounting region A, sealed region B, and inner periphery of the peripheral region C (all inside the solid line 33 a 2 in FIG. 9) of the front surface of the flat plate part 31 b are dug and then the embedded part 33 b is embedded.
Moreover, similar to Embodiment 3, the volumetric mass density of this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 b is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In regard to the volume of the heat dissipating unit 30 b of the semiconductor device 10 c, the primary part makes up 55% of the volume, and the embedded part 33 b makes up 45%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 b when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 62.
In addition, it is possible to perform a plating treatment on the peripheral region C with a material having excellent corrosion resistance. Examples of such a material include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, or an alloy containing at least one of these. An oxide film may also be formed by the plating treatment. Applying this type of plating treatment to the peripheral region C makes it possible to improve corrosion resistance and prevent wetting of the solder 24 a. Thus, the case 36 can be suitably attached to the peripheral region C via the bonding material 28. Scribing could also be performed instead of the plating treatment in order to prevent flowing of the solder 24 a. However, scribing creates dust, and there is a risk that the dust could cause the semiconductor device 10 c to malfunction. The plating treatment does not cause this type of problem.
This type of semiconductor device 10 c can also be manufactured in a similar manner to Embodiment 3.
Accordingly, the semiconductor device 10 c has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 c also has the heat dissipating unit 30 b. The heat dissipating unit 30 b includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 b is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 b. Moreover, the front surface of the heat dissipating unit 30 b of the semiconductor device 10 c includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 36 is bonded. The embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. Inner wall surfaces 36 c 1, 36 c 2 of the opening 36 c in the case 36 of the semiconductor device 10 c are positioned on the inner side from a contact surface 33 a 2, which is the boundary (outer boundary) between the embedded part 33 b and flat plate part 31 b. In other words, the contact surface 33 a 2 of the embedded part 33 b is positioned below the case 36.
In this type of semiconductor device 10 c, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 c, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 b.
The primary part, which makes up a large portion of the heat dissipating unit 30 b, is made of aluminum or an aluminum alloy, and the embedded part 33 b can be made of copper or a copper alloy. Thus, it is possible for the heat dissipating unit 30 b to be made lightweight.
In the semiconductor device 10 c, the case 36 is thicker than the case 26 of the semiconductor device 10 b (see FIG. 6) in Embodiment 3. Meanwhile, it is also possible, in the semiconductor device 10 c, to widen the area (the length in the left-right direction of the drawing) of the embedded part 33 b of the semiconductor device 10 b in Embodiment 3 so as to position the contact surface 33 a 2 between the embedded part 33 b and flat plate part 31 b below the case 26. In regard to the volume of the heat dissipating unit 30 b of the semiconductor device 10 c in this case, the primary part would make up 55% of the volume, and the embedded part 33 b would make up 45%, for example. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 b made completely of copper is 100, then the weight of the heat dissipating unit 30 when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 62. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 b.
Moreover, in the semiconductor device 10 c as well, the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is disposed. This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 c has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
A difference in the linear expansion coefficients of the flat plate part 31 b and of the embedded part 33 b would cause deformations, warping, and gaps in the contact surface 33 a 2. In the semiconductor device 10 c, the contact surface 33 a 2 between the flat plate part 31 b and the embedded part 33 b is positioned below the case 36. Due to this, stress generated on the contact surface 33 a 2 resulting from deformations or the like does not progress to the sealing member 25, thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 c. The unevenness in the contact surface 33 a 2 between the flat plate part 31 b and the embedded part 33 b increases the bonding area of the bonding material 28, thus improving bonding strength between the peripheral region C of the flat plate part 31 b and the case 36.
Accordingly, the semiconductor device 10 c makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 5
In Embodiment 5, an example is described in which a case is attached to the semiconductor device 10 of Embodiment 1.
A semiconductor device 10 d of Embodiment 5 will be described using FIG. 10.
FIG. 10 shows a side cross-sectional view of the semiconductor device of Embodiment 5.
In Embodiment 5, the same reference characters are given to configurations that are the same as Embodiments 1 to 4, and explanations of these configurations may be omitted.
The semiconductor device 10 d contains the semiconductor unit 20 a and a heat dissipating unit 30 c.
The heat dissipating unit 30 c has a flat plate part 31 c and the fin part 32.
As shown in FIG. 10, the heat dissipating unit 30 c has set on the front surface thereof the mounting region A where the ceramic circuit substrate 21 is disposed via the solder 24 a, the sealed region B surrounding the mounting region A and on which the sealing member 25 is bonded, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The sealed region B is dug in the flat plate part 31 c. The thickness of the portion of the flat plate part 31 c that is not dug is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
Similar to Embodiment 1, the flat plate part 31 c also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof. The fin part 32 is also formed close to the rear surface of the flat plate part 31 c corresponding to the mounting region A. The first metal material forming this type of flat plate part 31 c and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
The embedded part 33 c is embedded inside the sealed region B that is dug into the front surface of the flat plate part 31 c. At this time, the front surface of the flat plate part 31 c and the front surface of the embedded part 33 c are horizontal. The second metal material forming this type of embedded part 33 c is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Moreover, similar to Embodiment 1, the volumetric mass density of this type of flat plate part 31 c and fin part 32 is less than the volumetric mass density of the embedded part 33 c, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 c is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In regard to the volume of the heat dissipating unit 30 c of the semiconductor device 10 d, the primary part makes up 90% of the volume, and the embedded part 33 c makes up 10%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 c made completely of copper is 100, then the weight of the heat dissipating unit 30 c when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 c is made of copper or a copper alloy would be 37. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 c, and the volume of the primary part is greater than the volume of the embedded part 33 c, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 c.
Furthermore, similar to Embodiment 1, it is preferable that the mounting region A of the front surface of the heat dissipating unit 30 c be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21. The thickness of the plating is 10 μm to 100 μm inclusive.
This type of semiconductor device 10 d can also be manufactured in a similar manner to Embodiment 3.
Accordingly, the semiconductor device 10 d has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 d also has the heat dissipating unit 30 c. The heat dissipating unit 30 c includes the flat plate part 31 c and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 c is also provided with the embedded part 33 c, which is embedded in the front surface of the flat plate part 31 c and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 c. Moreover, the front surface of the heat dissipating unit 30 c of the semiconductor device 10 d includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The embedded part 33 c is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference in the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25.
In this type of semiconductor device 10 d, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 d, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 c of the heat dissipating unit 30 c sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 c of the heat dissipating unit 30 c.
The primary part, which makes up a large portion of the heat dissipating unit 30 c, is made of aluminum or an aluminum alloy, and the embedded part 33 c can be made of copper or a copper alloy. Thus, it is possible for the heat dissipating unit 30 c to be made lightweight.
Accordingly, the semiconductor device 10 d makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 6
In Embodiment 6, an example will be described in which, in the semiconductor device 10 d of Embodiment 5, contact surfaces between the flat plate part 31 c of the heat dissipating unit 30 c and the embedded part 33 c are positioned below both the case 26 and the ceramic circuit substrate 21.
A semiconductor device 10 e of Embodiment 6 will be described using FIG. 11 and FIG. 12.
FIG. 11 shows a side cross-sectional view of the semiconductor device of Embodiment 6. FIG. 12 shows a plan view of a heat dissipating unit of the semiconductor device of Embodiment 6. FIG. 12 shows a plan view of the front surface of the heat dissipating unit 30 d (on the side where the semiconductor unit 20 a is placed).
In Embodiment 6, the same reference characters are given to configurations that are the same as Embodiments 1 to 5, and explanations of these configurations may be omitted.
The semiconductor device 10 e contains the semiconductor unit 20 a and the heat dissipating unit 30 d.
The heat dissipating unit 30 d has a flat plate part 31 d, the fin part 32, and an embedded part 33 d.
As shown in FIG. 11 and FIG. 12, the heat dissipating unit 30 d has set on the front surface thereof the mounting region A (the region on the inside of the inner dashed line in FIG. 12) where the ceramic circuit substrate 21 is disposed via the solder 24 a, the sealed region B (the region between the inner dashed line and outer dashed line in FIG. 12) surrounding the mounting region A, and the peripheral region C (the region outside the outer dashed line in FIG. 12) on the outer side of the sealed region B. In the flat plate part 31 d, the outer periphery of the mounting region A, the sealed region B, and the outer periphery of the peripheral region C are dug (together referred to as the region between a contact surface 33 d 1 and contact surface 33 d 2 in FIG. 12). The thickness of the portion of the flat plate part 31 d that is not dug is 1 mm to 10 mm inclusive, and more preferably 2 mm to 5 mm inclusive. Furthermore, the dig depth of the sealed region B is 0.5 mm to 8 mm inclusive, and more preferably 1 mm to 3 mm inclusive.
Similar to Embodiment 1, the flat plate part 31 d also has the fin part 32 made of the plurality of fins integrally formed on the rear surface thereof. The fin part 32 is formed close to the rear surface of the flat plate part 31 d corresponding to the mounting region A. The first metal material forming this type of flat plate part 31 d and fin part 32 (together referred to as the primary part) is also, similar to Embodiment 1, made of aluminum or an aluminum alloy.
The embedded part 33 d is embedded in the outer periphery of the mounting region A, the sealed region B, and the outer periphery of the peripheral region C dug in the front surface of the flat plate part 31 d. At this time, the front surface of the flat plate part 31 d and the front surface of the embedded part 33 d are horizontal. The second metal material forming this type of embedded part 33 d is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Similar to Embodiment 1, the volumetric mass density of this type of primary part is less than the volumetric mass density of the embedded part 33 d, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 d is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
Furthermore, the contact surface 33 d 1 of the boundary (inner edge) on the mounting region A side between the embedded part 33 d and the flat plate part 31 d is positioned below the ceramic circuit substrate 21. The contact surface 33 d 2 of the boundary (outer edge) on the peripheral region C side between the embedded part 33 d and the flat plate part 31 d is positioned below the case 26.
In regard to the volume of the heat dissipating unit 30 d of the semiconductor device 10 e, the primary part makes up 75% of the volume, and the embedded part 33 d makes up 25%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 d made completely of copper is 100, then the weight of the heat dissipating unit 30 d when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 d is made of copper or a copper alloy would be 48. In this case, the weight of the heat dissipating unit 30 d when the embedded part 33 d is made of an MMC is 45. Accordingly, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 d, and the volume of the primary part is greater than the volume of the embedded part 33 d, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 d.
Furthermore, similar to Embodiment 1, it is preferable that the mounting region A of the front surface of the heat dissipating unit 30 d be plated with nickel, copper, tin, or the like, in order to solder the ceramic circuit substrate 21. The thickness of the plating is 10 μm to 100 μm inclusive.
In addition, it is possible to perform a plating treatment on the peripheral region C of this type of heat dissipating unit 30 d with a material having excellent corrosion resistance. Examples of such a material include aluminum, nickel, titanium, chromium, molybdenum, tantalum, niobium, tungsten, vanadium, bismuth, zirconium, hafnium, gold, platinum, palladium, or an alloy containing at least one of these. An oxide film may also be formed by the plating treatment. Applying this type of plating treatment to the peripheral region C makes it possible to improve corrosion resistance and prevent wetting of the solder 24 a. Thus, the case 26 can be suitably attached to the peripheral region C via the bonding material 28. Scribing could also be performed instead of the plating treatment in order to prevent flowing of the solder. However, scribing creates dust, and there is a risk that the dust could cause the semiconductor device 10 e to malfunction. The plating treatment does not cause this type of problem.
This type of semiconductor device 10 e can also be manufactured in a similar manner to Embodiment 3.
Accordingly, the semiconductor device 10 e has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 e also has the heat dissipating unit 30 d. The heat dissipating unit 30 d includes the flat plate part 31 d and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 d is also provided with the embedded part 33 d, which is embedded in the front surface of the flat plate part 31 d and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 d. Moreover, the front surface of the heat dissipating unit 30 d of the semiconductor device 10 e includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The embedded part 33 d is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. In addition, in the semiconductor device 10 e, the contact surface 33 d 1 on the mounting region A side of the embedded part 33 d is positioned below the ceramic circuit substrate 21, and the contact surface 33 d 2 on the peripheral region C side of the embedded part 33 d is positioned below the case 26.
In this type of semiconductor device 10 e, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 e, the absolute difference in the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 d of the heat dissipating unit 30 d sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 d of the heat dissipating unit 30 d.
The primary part, which makes up a large portion of the heat dissipating unit 30 d, is made of aluminum or an aluminum alloy, and the embedded part 33 d can be made of copper or a copper alloy (or an MMC). Thus, it is possible for the heat dissipating unit 30 d to be made lightweight.
A difference in the linear expansion coefficients of the flat plate part 31 d and of the embedded part 33 d would cause deformations, warping, and gaps in the contact surfaces 33 d 1, 33 d 2. In the semiconductor device 10 e, the contact surfaces 33 d 1, 33 d 2 between the flat plate part 31 d and embedded part 33 d are positioned below both the ceramic circuit substrate 21 and the case 26. Due to this, stress generated on the contact surfaces 33 d 1, 33 d 2 resulting from deformations or the like does not progress to the sealing member 25, thus suppressing a reduction in the insulating characteristics of the semiconductor device 10 e. The unevenness in the contact surface 33 d 2 between the flat plate part 31 d and the embedded part 33 d increases the bonding area of the bonding material 28, thus improving bonding strength between the peripheral region C of the flat plate part 31 d and the case 26.
Accordingly, the semiconductor device 10 e makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 7
In Embodiment 7, an example will be described in which, in the semiconductor device 10 b of Embodiment 3, protrusions have been formed in the sealed region B of the heat dissipating unit 30 b.
A semiconductor device 10 f of Embodiment 7 will be described using FIG. 13 and FIG. 14.
FIG. 13 is a side cross-sectional view of the semiconductor device of Embodiment 7, and FIG. 14 is a plan view of a heat dissipating unit of the semiconductor device of Embodiment 7. FIG. 14 shows a plan view of the front surface of the heat dissipating unit 30 e (on the side where the semiconductor unit 20 a is placed).
In Embodiment 7, the same reference characters are given to configurations that are the same as Embodiments 1 to 6, and explanations of these configurations may be omitted.
The semiconductor device 10 f contains the semiconductor unit 20 a and the heat dissipating unit 30 e.
Among these, the heat dissipating unit 30 e has the flat plate part 31 b, fin part 32, and embedded part 33 b.
The embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal. The second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Moreover, similar to Embodiment 1, the volumetric mass density of the flat plate part 31 b and fin part 32 (together referred to as the primary part) is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 b is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In addition, the embedded part 33 b has a plurality of protrusions 33 b 1 formed in the sealed region B along the sides of the mounting region A. The protrusions 33 b 1 shown in FIG. 13 and FIG. 14 are one example. The shape of the protrusion 33 b 1 can be a cylindrical shape, a semi-spherical shape, a cuboid shape, a trigonal pyramid shape, a quadrangular pyramid shape, or the like. The arrangement of the protrusions 33 b 1 is not limited to one row, and can be a plurality of rows or the like.
Accordingly, in regard to the volume of the heat dissipating unit 30 e of the semiconductor device 10 f, the primary part makes up 67% of the volume, and the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 e made completely of copper is 100, then the weight of the heat dissipating unit 30 e when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53. Thus, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 e.
This type of semiconductor device 10 f can also be manufactured in a similar manner to Embodiment 3.
Similar to Embodiment 1, in the semiconductor device 10 f configured in this manner, because the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 b (sealed region B) is less than or equal to approximately 25% of the value of the linear expansion coefficient of the sealing member 25, then it is thought that peeling will not occur between the sealing member 25 and the embedded part 33 b.
Accordingly, the semiconductor device 10 f has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 f also has the heat dissipating unit 30 e. The heat dissipating unit 30 e includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 e is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 e. Moreover, the front surface of the heat dissipating unit 30 e of the semiconductor device 10 f includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. Additionally, in the semiconductor device 10 f, the plurality of protrusions 33 b 1 are formed in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e.
In this type of semiconductor device 10 f as well, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 f as well, the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. Moreover, in the semiconductor device 10 f, the plurality of protrusions 33 b 1 are formed in the sealed region B of the embedded part 33 b, thus increasing the contact area between the sealing member 25 and the sealed region B, along with improving the bonding strength of the sealing member 25 to the sealed region B due to the anchor effect of the protrusions 33 b 1. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 e.
The primary part, which makes up a large portion of the heat dissipating unit 30 e, is made of aluminum or an aluminum alloy, and the embedded part 33 b, which has less volume than the primary part, can be made of copper or a copper alloy. Furthermore, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b. Thus, it is possible for the heat dissipating unit 30 e to be made lightweight.
Moreover, in the semiconductor device 10 f as well, the embedded part 33 b made of copper or a copper alloy is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted. This type of embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 f has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
Accordingly, the semiconductor device 10 f makes it possible to lower costs and suppress a decrease in reliability.
Embodiment 8
In Embodiment 8, an example will be described in which, in the semiconductor device 10 b of Embodiment 3, recesses have been formed in the sealed region B of the heat dissipating unit 30 b.
A semiconductor device 10 g of Embodiment 8 will be described using FIG. 15.
FIG. 15 shows a side cross-sectional view of the semiconductor device of Embodiment 8.
In Embodiment 8, the same reference characters are given to configurations that are the same as Embodiments 1 to 7, and explanations of these configurations may be omitted.
The semiconductor device 10 g contains the semiconductor unit 20 a and a heat dissipating unit 30 f.
Among these, the heat dissipating unit 30 f has the flat plate part 31 b, fin part 32, and embedded part 33 b.
The embedded part 33 b is embedded inside the mounting region A and sealed region B dug into the front surface of the flat plate part 31 b. At this time, the front surface of the flat plate part 31 b and the front surface of the embedded part 33 b are horizontal. The second metal material forming this type of embedded part 33 b is copper or a copper alloy, or an MMC, similar to Embodiment 1.
Moreover, similar to Embodiment 1, the volumetric mass density of this type of flat plate part 31 b and fin part 32 (together referred to as the primary part) is less than the volumetric mass density of the embedded part 33 b, at 2.7 g/cm3 (aluminum or aluminum alloy). The volumetric mass density of the embedded part 33 b is 8.9 g/cm3 (copper or copper alloy) or 2.8 g/cm3 (MMC).
In addition, the embedded part 33 b has a plurality of recesses 33 b 2 formed in the sealed region B along the sides of the mounting region A. The formation places of the recesses 33 b 2 in the sealed region B correspond to the protrusions 33 b 1 in FIG. 13, for example. The shape of this type of recess 33 b 2 can be a cylindrical shape, a semi-spherical shape, a cuboid shape, a trigonal pyramid shape, a quadrangular pyramid shape, or the like. The arrangement of the recesses 33 b 2 is not limited to one row, and can be a plurality of rows or the like.
Accordingly, in regard to the volume of the heat dissipating unit 30 f of the semiconductor device 10 g, the primary part makes up 67% of the volume, and the embedded part 33 b makes up 33%. Therefore, in terms of the weight ratio, assuming that the weight of the heat dissipating unit 30 f made completely of copper is 100, then the weight of the heat dissipating unit 30 f when the primary part is made of aluminum or an aluminum alloy and the embedded part 33 b is made of copper or a copper alloy would be 53. Thus, the volumetric mass density of the primary part is less than the volumetric mass density of the embedded part 33 b, and the volume of the primary part is greater than the volume of the embedded part 33 b, which makes it possible to suppress an increase in weight of the heat dissipating unit 30 f.
This type of semiconductor device 10 g can also be manufactured in a similar manner to Embodiment 3.
Similar to Embodiment 1, in the semiconductor device 10 g configured in this manner, because the difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the embedded part 33 b (sealed region B) is less than or equal to approximately 25% of the value of the linear expansion coefficient of the sealing member 25, then it is thought that peeling will not occur between the sealing member 25 and the embedded part 33 b.
Accordingly, the semiconductor device 10 g has the semiconductor elements 22 a, 22 b, and the ceramic circuit substrate 21 having the insulated plate 21 a and the circuit layer 21 c formed on the front surface of the insulated plate 21 a, with the semiconductor elements 22 a, 22 b being disposed on the front surface of the circuit layer 21 c. The semiconductor device 10 g also has the heat dissipating unit 30 f. The heat dissipating unit 30 f includes the flat plate part 31 b and the fin part 32 made of aluminum or an aluminum alloy. The heat dissipating unit 30 f is also provided with the embedded part 33 b, which is embedded in the front surface of the flat plate part 31 b and made of copper or a copper alloy (or an MMC). In addition, the sealing member 25 seals the semiconductor elements 22 a, 22 b, ceramic circuit substrate 21, and front surface of the heat dissipating unit 30 f. Moreover, the front surface of the heat dissipating unit 30 f of the semiconductor device 10 g includes the mounting region A on which the ceramic circuit substrate 21 is disposed, the sealed region B adjacent to the mounting region A and sealed by the sealing member 25, and the peripheral region C surrounding the outer side of the sealed region B and on which the case 26 is bonded. The embedded part 33 b is formed in at least the sealed region B, the linear expansion coefficient of the copper or copper alloy (or MMC) is smaller than the linear expansion coefficient of the aluminum or aluminum alloy, and the absolute difference of the linear expansion coefficient of the copper or copper alloy (or MMC) and the linear expansion coefficient of the sealing member 25 is less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. Additionally, in the semiconductor device 10 g, the plurality of recesses 33 b 2 are formed in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f.
In this type of semiconductor device 10 g as well, the sealing by the sealing member 25 maintains insulating characteristics while making it possible to reduce stress exerted on the solder 24 a, 24 b, 24 c. Thus, it is possible to extend the lifespan of the solder 24 a, 24 b, 24 c.
Furthermore, in this type of semiconductor device 10 g as well, the absolute difference of the linear expansion coefficient of the sealing member 25 and the linear expansion coefficient of the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f sealed by the sealing member 25 is small: less than or equal to 25% of the value of the linear expansion coefficient of the sealing member 25. Moreover, in the semiconductor device 10 g, the plurality of recesses 33 b 2 are formed in the sealed region B of the embedded part 33 b, thus increasing the contact area between the sealing member 25 and the sealed region B, along with improving the bonding strength of the sealing member 25 to the sealed region B. This suppresses peeling of the sealing member 25 in the sealed region B of the embedded part 33 b of the heat dissipating unit 30 f.
The primary part, which makes up a large portion of the heat dissipating unit 30 f, is made of aluminum or an aluminum alloy, and the embedded part 33 b, which has a lower volume than the primary part, is made of copper or a copper alloy (or an MMC). Thus, it is possible for the heat dissipating unit 30 f to be made lightweight.
Moreover, in the semiconductor device 10 g as well, the embedded part 33 b made of copper or a copper alloy (or an MMC) is provided in the mounting region A in which the ceramic circuit substrate 21 is mounted. The embedded part 33 b has a high thermal conductivity and excellent heat dissipating characteristics as compared to the primary part, which is made of aluminum or an aluminum alloy. Due to this, the semiconductor device 10 g has cooling characteristics for the semiconductor elements 22 a, 22 b that are more improved than the semiconductor device 10 of Embodiment 1.
Accordingly, the semiconductor device 10 g makes it possible to lower costs and suppress a decrease in reliability.
The plurality of protrusions 33 b 1 of Embodiment 7 and recesses 33 b 2 of Embodiment 8 can be respectively formed in the sealed regions B (embedded parts 33, 33 a, 33 b, 33 c, 33 d) of the heat dissipating units 30, 30 a, 30 b, 30 c, 30 d of the semiconductor devices 10, 10 a, 10 b, 10 c, 10 d, 10 e in Embodiments 1-6. This improves the bonding strength of the sealing member 25 to the sealed region B more than if the protrusions 33 b 1 and recesses 33 b 2 were not provided.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover modifications and variations that come within the scope of the appended claims and their equivalents. In particular, it is explicitly contemplated that any part or whole of any two or more of the embodiments and their modifications described above can be combined and regarded within the scope of the present invention.

Claims (20)

What is claimed is:
1. A semiconductor device, comprising:
a semiconductor element;
a substrate that includes an insulated plate and a circuit layer on a front surface of the insulated plate, the semiconductor element being disposed on a front surface of the circuit layer;
a heat dissipating unit that includes a primary part made of a first metal material and an embedded part that is embedded in a front surface of the primary part and that is made of a second metal material, a front surface of the heat dissipating unit having a mounting region on which a rear surface of the substrate is mounted so as to dissipate heat generated by the semiconductor element; and
a sealing member that seals the semiconductor element, the substrate, and a sealed region of the front surface of the heat dissipating unit that is defined as an exposed region that is adjacent to the mounting region and that is not covered by the substrate,
wherein the embedded part is formed in an area in the front surface of the heat dissipating unit that includes at least an entirety of the sealed region, and
wherein a linear expansion coefficient of the second metal material is less than a linear expansion coefficient of the first metal material, and an absolute difference of the linear expansion coefficient of the second metal material and a linear expansion coefficient of the sealing member is less than or equal to 25% of a value of the linear expansion coefficient of the sealing member.
2. The semiconductor device according to claim 1, wherein the sealed region surrounds the mounting region in a plan view.
3. The semiconductor device according to claim 2, wherein the area in which the embedded part is formed extends beyond the sealed region and includes an entirety of the mounting region in the plan view.
4. The semiconductor device according to claim 1, wherein a volumetric; mass density of the first metal material is less than a volumetric mass density of the second metal material.
5. The semiconductor device according to claim 1, wherein the linear expansion coefficient of the second metal material is greater than or equal to 10.5 ppm/° C. and is less than or equal to 22.5 ppm/° C.
6. The semiconductor device according to claim 5, wherein the linear expansion coefficient of the second metal material is greater than or equal to 16.0 ppm/° C. and is less than or equal to 18.0 ppm/° C.
7. The semiconductor device according to claim 6, wherein the second metal material is copper, a copper alloy, or a metal matrix composite material.
8. The semiconductor device according to claim 7, wherein the metal matrix composite material is a composite material containing silicon carbide.
9. The semiconductor device according to claim 8, wherein the metal matrix composite material contains one of aluminum and magnesium in addition to the silicon carbide.
10. The semiconductor device according to claim 1, wherein the area in which the embedded part is formed extends beyond the sealed region and includes a part of the mounting region in a plan view so that an inner edge of said area is positioned inside the mounting region on which the substrate is mounted in the plan view.
11. The semiconductor device according to claim 1, wherein a linear expansion coefficient of the sealing member is greater than or equal to 14.0 ppm/° C. and is less than or equal to 18.0 ppm/° C.
12. The semiconductor device according to claim 11, wherein the sealing member includes an epoxy resin and a filler contained in the epoxy resin.
13. The semiconductor device according to claim 12, wherein the filler is silicon dioxide, aluminum oxide, boron nitride, or aluminum nitride.
14. The semiconductor device according to claim 1, wherein the first metal material is aluminum or an aluminum alloy.
15. The semiconductor device according to claim 2, further comprising a case having sidewalls that are mounted, via a bonding material, on a peripheral region of the front surface of the heat dissipating unit that surrounds the sealed region.
16. The semiconductor device according to claim 15, wherein the area in which the embedded part is formed extends beyond the sealed region and includes a part of the peripheral region in a plan view so that an outer edge of said area is positioned inside the peripheral region on which the sidewalls of the case are mounted in the plan view.
17. The semiconductor device according to claim 1, wherein the embedded part has a plurality of protrusions that protrude from the front surface of the heat dissipating unit in the sealed region.
18. The semiconductor device according to claim 1, wherein the embedded part has a plurality of recesses in the front surface of the heat dissipating unit in the sealed region.
19. The semiconductor device according to claim 15, wherein a metal film or an oxide film is formed in the peripheral region of the heat dissipating unit.
20. The semiconductor device according to claim 1, wherein the primary part of the heat dissipating unit comprises:
a flat plate part having a flat plate shape, the mounting region and the sealed region being defined in a front surface of the flat plate part; and
a fin part having a plurality of fins extending downwardly, formed on a rear surface of the flat plate part.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7135716B2 (en) * 2017-10-27 2022-09-13 三菱マテリアル株式会社 Joined body, insulated circuit board with heat sink, and heat sink
CN111448653B (en) * 2017-12-13 2024-05-24 三菱电机株式会社 Semiconductor device and power conversion device
US10541156B1 (en) * 2018-10-31 2020-01-21 International Business Machines Corporation Multi integrated circuit chip carrier package
JP7154410B2 (en) * 2019-06-06 2022-10-17 三菱電機株式会社 Warpage control structure of metal base plate, semiconductor module and inverter device
WO2020254143A1 (en) * 2019-06-19 2020-12-24 Danfoss Silicon Power Gmbh Half-bridge power assembly
JP7163896B2 (en) * 2019-10-28 2022-11-01 トヨタ自動車株式会社 semiconductor equipment
CN110993507B (en) * 2019-11-22 2021-05-25 江苏富乐德半导体科技有限公司 Method for reducing warping of copper-clad ceramic substrate mother board
JP7170620B2 (en) * 2019-11-26 2022-11-14 三菱電機株式会社 Manufacturing method of semiconductor device and heat radiation fin
EP4187589A1 (en) * 2021-11-24 2023-05-31 SwissSEM Technologies AG Directly cooled power module
KR102536643B1 (en) * 2022-11-28 2023-05-30 제엠제코(주) Semiconductor package

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090279276A1 (en) * 2008-05-08 2009-11-12 Toyota Jidosha Kabushiki Kaisha Electronic component
US20120140420A1 (en) * 2009-08-25 2012-06-07 Fuji Electric Co., Ltd. Semiconductor module and heat radiation member
US20170154855A1 (en) * 2014-07-04 2017-06-01 Mitsubishi Materials Corporation Power-module substrate unit and power module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000336438A (en) * 1999-03-25 2000-12-05 Kubota Corp Metal-ceramics composite material and its manufacture
JP2003023129A (en) * 2001-07-10 2003-01-24 Nissan Motor Co Ltd Power semiconductor device and method for manufacturing heat sink for mounting element
JP4569473B2 (en) * 2006-01-04 2010-10-27 株式会社日立製作所 Resin-encapsulated power semiconductor module
JP2011253950A (en) * 2010-06-02 2011-12-15 Mitsubishi Electric Corp Power semiconductor device
JP5602095B2 (en) * 2011-06-09 2014-10-08 三菱電機株式会社 Semiconductor device
JP2017135183A (en) * 2016-01-26 2017-08-03 三菱電機株式会社 Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090279276A1 (en) * 2008-05-08 2009-11-12 Toyota Jidosha Kabushiki Kaisha Electronic component
US20120140420A1 (en) * 2009-08-25 2012-06-07 Fuji Electric Co., Ltd. Semiconductor module and heat radiation member
JP2013500580A (en) 2009-08-25 2013-01-07 富士電機株式会社 Semiconductor module and heat dissipation member
US20170154855A1 (en) * 2014-07-04 2017-06-01 Mitsubishi Materials Corporation Power-module substrate unit and power module

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