JP6657770B2 - 液体組成物およびこれを用いたエッチング方法 - Google Patents

液体組成物およびこれを用いたエッチング方法 Download PDF

Info

Publication number
JP6657770B2
JP6657770B2 JP2015208989A JP2015208989A JP6657770B2 JP 6657770 B2 JP6657770 B2 JP 6657770B2 JP 2015208989 A JP2015208989 A JP 2015208989A JP 2015208989 A JP2015208989 A JP 2015208989A JP 6657770 B2 JP6657770 B2 JP 6657770B2
Authority
JP
Japan
Prior art keywords
acid
liquid composition
copper
main component
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015208989A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016108659A (ja
Inventor
秀範 竹内
秀範 竹内
邦夫 夕部
邦夫 夕部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of JP2016108659A publication Critical patent/JP2016108659A/ja
Application granted granted Critical
Publication of JP6657770B2 publication Critical patent/JP6657770B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2015208989A 2014-11-27 2015-10-23 液体組成物およびこれを用いたエッチング方法 Active JP6657770B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014239524 2014-11-27
JP2014239524 2014-11-27

Publications (2)

Publication Number Publication Date
JP2016108659A JP2016108659A (ja) 2016-06-20
JP6657770B2 true JP6657770B2 (ja) 2020-03-04

Family

ID=56121913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015208989A Active JP6657770B2 (ja) 2014-11-27 2015-10-23 液体組成物およびこれを用いたエッチング方法

Country Status (4)

Country Link
JP (1) JP6657770B2 (zh)
KR (1) KR102328443B1 (zh)
CN (2) CN115125536A (zh)
TW (1) TWI667373B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105803459B (zh) * 2016-05-03 2019-01-15 苏州晶瑞化学股份有限公司 一种微电子用多层金属膜蚀刻液及其应用
CN105970225B (zh) * 2016-07-01 2018-07-13 苏州博洋化学股份有限公司 一种铝蚀刻剂及其制备方法
WO2018047210A1 (ja) * 2016-09-09 2018-03-15 パナソニックIpマネジメント株式会社 多層膜用エッチング液とエッチング濃縮液およびエッチング方法
CN109844910B (zh) * 2016-10-21 2023-04-28 株式会社Adeka 蚀刻液组合物和蚀刻方法
KR20180060489A (ko) 2016-11-29 2018-06-07 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
CN106498398A (zh) * 2016-12-01 2017-03-15 深圳市华星光电技术有限公司 用于铜/钼膜层的金属蚀刻液及其蚀刻方法
JP6850650B2 (ja) * 2017-03-27 2021-03-31 株式会社Screenホールディングス 基板処理方法および基板処理装置
WO2018181896A1 (ja) 2017-03-31 2018-10-04 関東化學株式会社 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法
US20190040316A1 (en) * 2017-08-04 2019-02-07 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Etching solution of igzo film layer and etching method of the same
CN107978607B (zh) * 2017-11-21 2020-04-28 深圳市华星光电半导体显示技术有限公司 背沟道蚀刻型氧化物半导体tft基板的制作方法
WO2019180915A1 (ja) * 2018-03-23 2019-09-26 パナソニックIpマネジメント株式会社 銅厚膜用エッチング液
US11230668B2 (en) 2018-03-26 2022-01-25 Mitsubishi Gas Chemical Company, Inc. Etchant
TWI759450B (zh) * 2018-03-27 2022-04-01 日商三菱瓦斯化學股份有限公司 蝕刻液、蝕刻方法、及顯示裝置之製造方法
CN109112545A (zh) * 2018-09-25 2019-01-01 惠州市宙邦化工有限公司 一种铜钼合金膜的化学蚀刻用组合物
KR102562490B1 (ko) * 2018-10-29 2023-08-03 솔브레인 주식회사 식각액 조성물 및 이를 이용한 금속막 식각 방법
CN109576717A (zh) * 2018-11-29 2019-04-05 广东工业大学 一种坡莫合金丝表面退铜剂及其制备方法和应用
JP6485587B1 (ja) * 2018-12-25 2019-03-20 三菱瓦斯化学株式会社 エッチング液
CN110644001A (zh) * 2019-10-22 2020-01-03 湖北兴福电子材料有限公司 一种铜蚀刻液
CN114032548A (zh) * 2021-11-11 2022-02-11 河南慧泽生物工程有限公司 一种印刷电路板铜箔蚀刻液
CN114989826A (zh) * 2022-06-06 2022-09-02 江苏和达电子科技有限公司 一种用于金属层和半导体层形态控制的蚀刻液及其应用
CN116497355B (zh) * 2023-04-10 2024-03-22 珠海市裕洲环保科技有限公司 一种酸性铜蚀刻液及其应用

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378270A (en) * 1981-10-29 1983-03-29 Learonal, Inc. Method of etching circuit boards and recovering copper from the spent etch solutions
DE102005038414A1 (de) * 2005-08-12 2007-02-15 Basf Aktiengesellschaft Stabilisierte Ätzlösungen zum Ätzen von Cu- und Cu/Ni-Schicht
CN101952485A (zh) 2007-11-22 2011-01-19 出光兴产株式会社 蚀刻液组合物
JP5403922B2 (ja) * 2008-02-26 2014-01-29 富士フイルム株式会社 研磨液および研磨方法
CN102576170B (zh) 2009-08-20 2014-12-17 东友精细化工有限公司 制造用于液晶显示器的阵列基板的方法
EP2518759B1 (en) * 2009-12-25 2017-06-21 Mitsubishi Gas Chemical Company, Inc. Method for manufacturing semiconductor device using an etchant
US9365770B2 (en) * 2011-07-26 2016-06-14 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper/molybdenum-based multilayer thin film
JP2014032998A (ja) * 2012-08-01 2014-02-20 Panasonic Liquid Crystal Display Co Ltd 薄膜トランジスタの製造方法
KR20140118492A (ko) * 2013-03-29 2014-10-08 동우 화인켐 주식회사 구리계 금속막 식각액 조성물 및 이를 이용한 배선 형성 방법
JP6531612B2 (ja) * 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法

Also Published As

Publication number Publication date
JP2016108659A (ja) 2016-06-20
CN115125536A (zh) 2022-09-30
TWI667373B (zh) 2019-08-01
KR20160064013A (ko) 2016-06-07
CN105648439A (zh) 2016-06-08
KR102328443B1 (ko) 2021-11-18
TW201627533A (zh) 2016-08-01

Similar Documents

Publication Publication Date Title
JP6657770B2 (ja) 液体組成物およびこれを用いたエッチング方法
JP6531612B2 (ja) 液体組成物およびこれを用いたエッチング方法
JP6036691B2 (ja) 半導体装置の製造方法
JP5685204B2 (ja) 銅/チタン系多層薄膜用エッチング液
TWI808965B (zh) 鈦層或含鈦層的蝕刻液組成物以及蝕刻方法
JP5682624B2 (ja) 銅層及びモリブデン層を含む多層構造膜用エッチング液
TW201610234A (zh) 蝕刻液組成物及蝕刻方法
TWI495762B (zh) 蝕刻液組成物及蝕刻方法
WO2020062590A1 (zh) 一种铜钼合金膜的化学蚀刻用组合物
TWI596235B (zh) 用於銅基金屬層的蝕刻劑組合物及用其製造顯示設備的陣列基板的方法
JP6458913B1 (ja) エッチング液
TWI759450B (zh) 蝕刻液、蝕刻方法、及顯示裝置之製造方法
WO2015064468A1 (ja) 亜鉛、スズおよび酸素から実質的になる酸化物のエッチング液およびエッチング方法
TW201420811A (zh) 蝕刻劑組合物、形成lcd布線的方法、陣列基板及其製法
KR102142419B1 (ko) 액정표시장치용 어레이 기판의 제조방법
KR102169571B1 (ko) 액정표시장치용 어레이 기판의 제조방법
KR20200114861A (ko) 액정표시장치용 어레이 기판의 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151112

AA64 Notification of invalidation of claim of internal priority (with term)

Free format text: JAPANESE INTERMEDIATE CODE: A241764

Effective date: 20151117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180718

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190528

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191213

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200120

R151 Written notification of patent or utility model registration

Ref document number: 6657770

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151